JP6106908B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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JP6106908B2
JP6106908B2 JP2012279752A JP2012279752A JP6106908B2 JP 6106908 B2 JP6106908 B2 JP 6106908B2 JP 2012279752 A JP2012279752 A JP 2012279752A JP 2012279752 A JP2012279752 A JP 2012279752A JP 6106908 B2 JP6106908 B2 JP 6106908B2
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silicon nitride
nitride film
film
semiconductor device
heat treatment
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JP2014123667A5 (enExample
JP2014123667A (ja
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務 駒谷
務 駒谷
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to US14/102,639 priority patent/US9396927B2/en
Publication of JP2014123667A publication Critical patent/JP2014123667A/ja
Publication of JP2014123667A5 publication Critical patent/JP2014123667A5/ja
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    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
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    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2012279752A 2012-12-21 2012-12-21 半導体装置の製造方法 Active JP6106908B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012279752A JP6106908B2 (ja) 2012-12-21 2012-12-21 半導体装置の製造方法
US14/102,639 US9396927B2 (en) 2012-12-21 2013-12-11 Method for fabricating semiconductor device
US15/180,851 US9818838B2 (en) 2012-12-21 2016-06-13 Semiconductor device

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JP2012279752A JP6106908B2 (ja) 2012-12-21 2012-12-21 半導体装置の製造方法

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JP2014123667A5 JP2014123667A5 (enExample) 2016-02-18
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Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
JP6197344B2 (ja) * 2013-04-18 2017-09-20 住友電気工業株式会社 半導体装置
JP6241915B2 (ja) * 2013-07-31 2017-12-06 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
CN104409431B (zh) * 2014-10-24 2017-07-04 苏州能讯高能半导体有限公司 一种半导体器件
JP2016171162A (ja) * 2015-03-12 2016-09-23 株式会社東芝 半導体装置
JP2017079288A (ja) * 2015-10-21 2017-04-27 住友電気工業株式会社 半導体装置の製造方法及び半導体装置
JP6640687B2 (ja) * 2016-09-09 2020-02-05 株式会社東芝 半導体装置
JP7031282B2 (ja) * 2017-12-20 2022-03-08 富士通株式会社 半導体装置及びその製造方法、高周波増幅器
JP2019175913A (ja) * 2018-03-27 2019-10-10 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
CN112186031A (zh) * 2020-09-25 2021-01-05 浙江大学杭州国际科创中心 一种等离子体的处理方法及其应用

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JPH09260372A (ja) * 1996-03-21 1997-10-03 Toshiba Corp 半導体装置の絶縁膜の形成方法
JP2006269673A (ja) * 2005-03-23 2006-10-05 Nec Electronics Corp 半導体装置およびその製造方法
JP4912604B2 (ja) 2005-03-30 2012-04-11 住友電工デバイス・イノベーション株式会社 窒化物半導体ｈｅｍｔおよびその製造方法。
US8482035B2 (en) * 2005-07-29 2013-07-09 International Rectifier Corporation Enhancement mode III-nitride transistors with single gate Dielectric structure
JP5186776B2 (ja) * 2007-02-22 2013-04-24 富士通株式会社 半導体装置及びその製造方法
JP5345328B2 (ja) * 2008-02-22 2013-11-20 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
US8213751B1 (en) * 2008-11-26 2012-07-03 Optonet Inc. Electronic-integration compatible photonic integrated circuit and method for fabricating electronic-integration compatible photonic integrated circuit
JP5531432B2 (ja) * 2009-03-27 2014-06-25 富士通株式会社 化合物半導体装置及びその製造方法
JP2012033688A (ja) * 2010-07-30 2012-02-16 Sumitomo Electric Ind Ltd 半導体装置の製造方法
JP6339762B2 (ja) * 2013-01-17 2018-06-06 富士通株式会社 半導体装置及びその製造方法、電源装置、高周波増幅器

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US20160293724A1 (en) 2016-10-06
US9818838B2 (en) 2017-11-14
US9396927B2 (en) 2016-07-19
US20140179078A1 (en) 2014-06-26
JP2014123667A (ja) 2014-07-03

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