JP2011510507A5 - - Google Patents
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- Publication number
- JP2011510507A5 JP2011510507A5 JP2010543450A JP2010543450A JP2011510507A5 JP 2011510507 A5 JP2011510507 A5 JP 2011510507A5 JP 2010543450 A JP2010543450 A JP 2010543450A JP 2010543450 A JP2010543450 A JP 2010543450A JP 2011510507 A5 JP2011510507 A5 JP 2011510507A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- support substrate
- manufacturing
- thin film
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 19
- 238000004519 manufacturing process Methods 0.000 claims 14
- 239000010409 thin film Substances 0.000 claims 10
- 238000010438 heat treatment Methods 0.000 claims 9
- 239000000463 material Substances 0.000 claims 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 4
- 230000008021 deposition Effects 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 238000000926 separation method Methods 0.000 claims 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims 2
- -1 LiTaO 3 Inorganic materials 0.000 claims 2
- 239000002131 composite material Substances 0.000 claims 2
- 229910052594 sapphire Inorganic materials 0.000 claims 2
- 239000010980 sapphire Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims 1
- 238000000407 epitaxy Methods 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0850362 | 2008-01-21 | ||
| FR0850362A FR2926672B1 (fr) | 2008-01-21 | 2008-01-21 | Procede de fabrication de couches de materiau epitaxie |
| PCT/EP2009/050086 WO2009092624A1 (en) | 2008-01-21 | 2009-01-06 | A method of fabricating epitaxially grown layers on a composite structure |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011510507A JP2011510507A (ja) | 2011-03-31 |
| JP2011510507A5 true JP2011510507A5 (enExample) | 2011-12-15 |
| JP5005097B2 JP5005097B2 (ja) | 2012-08-22 |
Family
ID=39772865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010543450A Active JP5005097B2 (ja) | 2008-01-21 | 2009-01-06 | 複合構造上でエピタキシーによって成長する層の製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8153500B2 (enExample) |
| EP (1) | EP2232546B1 (enExample) |
| JP (1) | JP5005097B2 (enExample) |
| KR (1) | KR101568890B1 (enExample) |
| CN (1) | CN101925995B (enExample) |
| AT (1) | ATE522930T1 (enExample) |
| FR (1) | FR2926672B1 (enExample) |
| WO (1) | WO2009092624A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2926674B1 (fr) * | 2008-01-21 | 2010-03-26 | Soitec Silicon On Insulator | Procede de fabrication d'une structure composite avec couche d'oxyde de collage stable |
| KR20120052160A (ko) * | 2010-11-15 | 2012-05-23 | 엔지케이 인슐레이터 엘티디 | 복합 기판 및 복합 기판의 제조 방법 |
| FR2968121B1 (fr) * | 2010-11-30 | 2012-12-21 | Soitec Silicon On Insulator | Procede de transfert d'une couche a haute temperature |
| CN102820393A (zh) * | 2011-06-10 | 2012-12-12 | 光达光电设备科技（嘉兴）有限公司 | 复合衬底结构及其制作方法 |
| US8927318B2 (en) * | 2011-06-14 | 2015-01-06 | International Business Machines Corporation | Spalling methods to form multi-junction photovoltaic structure |
| US8633094B2 (en) | 2011-12-01 | 2014-01-21 | Power Integrations, Inc. | GaN high voltage HFET with passivation plus gate dielectric multilayer structure |
| US8940620B2 (en) * | 2011-12-15 | 2015-01-27 | Power Integrations, Inc. | Composite wafer for fabrication of semiconductor devices |
| US8928037B2 (en) | 2013-02-28 | 2015-01-06 | Power Integrations, Inc. | Heterostructure power transistor with AlSiN passivation layer |
| FR3007892B1 (fr) * | 2013-06-27 | 2015-07-31 | Commissariat Energie Atomique | Procede de transfert d'une couche mince avec apport d'energie thermique a une zone fragilisee via une couche inductive |
| JP6454606B2 (ja) * | 2015-06-02 | 2019-01-16 | 信越化学工業株式会社 | 酸化物単結晶薄膜を備えた複合ウェーハの製造方法 |
| FR3048548B1 (fr) * | 2016-03-02 | 2018-03-02 | Soitec | Procede de determination d'une energie convenable d'implantation dans un substrat donneur et procede de fabrication d'une structure de type semi-conducteur sur isolant |
| JP6563360B2 (ja) * | 2016-04-05 | 2019-08-21 | 信越化学工業株式会社 | 酸化物単結晶薄膜を備えた複合ウェーハの製造方法 |
| FR3068508B1 (fr) * | 2017-06-30 | 2019-07-26 | Soitec | Procede de transfert d'une couche mince sur un substrat support presentant des coefficients de dilatation thermique differents |
| CN117038572A (zh) * | 2017-07-14 | 2023-11-10 | 太阳能爱迪生半导体有限公司 | 绝缘体上半导体结构的制造方法 |
| JP2019151896A (ja) * | 2018-03-05 | 2019-09-12 | 日本特殊陶業株式会社 | ＳｉＣ部材及びこれからなる基板保持部材並びにこれらの製造方法 |
| FR3079660B1 (fr) * | 2018-03-29 | 2020-04-17 | Soitec | Procede de transfert d'une couche |
| FR3108775B1 (fr) * | 2020-03-27 | 2022-02-18 | Soitec Silicon On Insulator | Procede de fabrication d’une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic |
| FR3108774B1 (fr) * | 2020-03-27 | 2022-02-18 | Soitec Silicon On Insulator | Procede de fabrication d’une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic |
| FR3111232B1 (fr) * | 2020-06-09 | 2022-05-06 | Soitec Silicon On Insulator | Substrat temporaire demontable compatible avec de tres hautes temperatures et procede de transfert d’une couche utile a partir dudit substrat |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2767604B1 (fr) * | 1997-08-19 | 2000-12-01 | Commissariat Energie Atomique | Procede de traitement pour le collage moleculaire et le decollage de deux structures |
| US6326279B1 (en) * | 1999-03-26 | 2001-12-04 | Canon Kabushiki Kaisha | Process for producing semiconductor article |
| JP2000353797A (ja) * | 1999-06-11 | 2000-12-19 | Mitsubishi Electric Corp | 半導体ウエハおよびその製造方法 |
| FR2817395B1 (fr) * | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
| FR2823599B1 (fr) * | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | Substrat demomtable a tenue mecanique controlee et procede de realisation |
| FR2823596B1 (fr) * | 2001-04-13 | 2004-08-20 | Commissariat Energie Atomique | Substrat ou structure demontable et procede de realisation |
| FR2835095B1 (fr) * | 2002-01-22 | 2005-03-18 | Procede de preparation d'ensembles a semi-conducteurs separables, notamment pour former des substrats pour l'electronique, l'optoelectrique et l'optique | |
| FR2857982B1 (fr) | 2003-07-24 | 2007-05-18 | Soitec Silicon On Insulator | Procede de fabrication d'une couche epitaxiee |
| FR2857983B1 (fr) * | 2003-07-24 | 2005-09-02 | Soitec Silicon On Insulator | Procede de fabrication d'une couche epitaxiee |
| FR2858461B1 (fr) * | 2003-07-30 | 2005-11-04 | Soitec Silicon On Insulator | Realisation d'une structure comprenant une couche protegeant contre des traitements chimiques |
| FR2860249B1 (fr) * | 2003-09-30 | 2005-12-09 | Michel Bruel | Procede de fabrication d'une structure en forme de plaque, en particulier en silicium, application de procede, et structure en forme de plaque, en particulier en silicium |
| FR2865574B1 (fr) | 2004-01-26 | 2006-04-07 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat demontable |
| JP2005005723A (ja) * | 2004-06-25 | 2005-01-06 | Hitachi Cable Ltd | 窒化物半導体エピタキシャルウェハの製造方法及び窒化物半導体エピタキシャルウェハ |
| JP2008537341A (ja) * | 2005-04-13 | 2008-09-11 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 自立（Ａｌ，Ｉｎ，Ｇａ）Ｎウェーハ製作のためのウェーハ分離技術 |
-
2008
- 2008-01-21 FR FR0850362A patent/FR2926672B1/fr active Active
-
2009
- 2009-01-06 US US12/663,696 patent/US8153500B2/en active Active
- 2009-01-06 EP EP09704183A patent/EP2232546B1/en active Active
- 2009-01-06 AT AT09704183T patent/ATE522930T1/de not_active IP Right Cessation
- 2009-01-06 WO PCT/EP2009/050086 patent/WO2009092624A1/en not_active Ceased
- 2009-01-06 JP JP2010543450A patent/JP5005097B2/ja active Active
- 2009-01-06 KR KR1020107015994A patent/KR101568890B1/ko active Active
- 2009-01-06 CN CN2009801025906A patent/CN101925995B/zh active Active
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