JP2006080314A5 - - Google Patents

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Publication number
JP2006080314A5
JP2006080314A5 JP2004262966A JP2004262966A JP2006080314A5 JP 2006080314 A5 JP2006080314 A5 JP 2006080314A5 JP 2004262966 A JP2004262966 A JP 2004262966A JP 2004262966 A JP2004262966 A JP 2004262966A JP 2006080314 A5 JP2006080314 A5 JP 2006080314A5
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JP
Japan
Prior art keywords
substrate
manufacturing
bonding surface
bonding
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004262966A
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English (en)
Japanese (ja)
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JP2006080314A (ja
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Publication date
Application filed filed Critical
Priority to JP2004262966A priority Critical patent/JP2006080314A/ja
Priority claimed from JP2004262966A external-priority patent/JP2006080314A/ja
Priority to US11/222,903 priority patent/US7642112B2/en
Publication of JP2006080314A publication Critical patent/JP2006080314A/ja
Publication of JP2006080314A5 publication Critical patent/JP2006080314A5/ja
Withdrawn legal-status Critical Current

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JP2004262966A 2004-09-09 2004-09-09 結合基板の製造方法 Withdrawn JP2006080314A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004262966A JP2006080314A (ja) 2004-09-09 2004-09-09 結合基板の製造方法
US11/222,903 US7642112B2 (en) 2004-09-09 2005-09-09 Method of manufacturing bonded substrate stack

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004262966A JP2006080314A (ja) 2004-09-09 2004-09-09 結合基板の製造方法

Publications (2)

Publication Number Publication Date
JP2006080314A JP2006080314A (ja) 2006-03-23
JP2006080314A5 true JP2006080314A5 (enExample) 2007-10-11

Family

ID=36126083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004262966A Withdrawn JP2006080314A (ja) 2004-09-09 2004-09-09 結合基板の製造方法

Country Status (2)

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US (1) US7642112B2 (enExample)
JP (1) JP2006080314A (enExample)

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US7601271B2 (en) * 2005-11-28 2009-10-13 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion
US7361574B1 (en) * 2006-11-17 2008-04-22 Sharp Laboratories Of America, Inc Single-crystal silicon-on-glass from film transfer
FR2910177B1 (fr) * 2006-12-18 2009-04-03 Soitec Silicon On Insulator Couche tres fine enterree
JP2008214491A (ja) * 2007-03-05 2008-09-18 Ulvac Japan Ltd 表面処理方法
JP5433927B2 (ja) * 2007-03-14 2014-03-05 株式会社Ｓｕｍｃｏ 貼り合わせウェーハの製造方法
JP5220335B2 (ja) * 2007-04-11 2013-06-26 信越化学工業株式会社 Ｓｏｉ基板の製造方法
US9059247B2 (en) * 2007-05-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate and method for manufacturing semiconductor device
JP5430846B2 (ja) * 2007-12-03 2014-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2009253184A (ja) * 2008-04-10 2009-10-29 Shin Etsu Chem Co Ltd 貼り合わせ基板の製造方法
TWI492275B (zh) * 2008-04-10 2015-07-11 Shinetsu Chemical Co The method of manufacturing the bonded substrate
KR101629193B1 (ko) * 2008-06-26 2016-06-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판의 제작 방법
US8481411B2 (en) * 2009-06-10 2013-07-09 Seoul Opto Device Co., Ltd. Method of manufacturing a semiconductor substrate having a cavity
WO2010143778A1 (ko) * 2009-06-10 2010-12-16 서울옵토디바이스주식회사 반도체 기판, 그 제조 방법, 반도체 소자 및 그 제조 방법
US8860183B2 (en) * 2009-06-10 2014-10-14 Seoul Viosys Co., Ltd. Semiconductor substrate, semiconductor device, and manufacturing methods thereof
CN104795313B (zh) 2009-08-26 2017-12-08 首尔伟傲世有限公司 制造半导体基底的方法和制造发光装置的方法
JP5570838B2 (ja) * 2010-02-10 2014-08-13 ソウル バイオシス カンパニー リミテッド 半導体基板、その製造方法、半導体デバイス及びその製造方法
JP5421825B2 (ja) * 2010-03-09 2014-02-19 東京エレクトロン株式会社 接合システム、接合方法、プログラム及びコンピュータ記憶媒体
US20120045883A1 (en) * 2010-08-23 2012-02-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate
EP3024014B9 (de) 2011-01-25 2019-04-24 EV Group E. Thallner GmbH Verfahren zum permanenten bonden von wafern
EP2695182B1 (de) * 2011-04-08 2016-03-30 Ev Group E. Thallner GmbH Verfahren zum permanenten bonden von wafern
EP2695181B1 (de) * 2011-04-08 2015-06-24 Ev Group E. Thallner GmbH Verfahren zum permanenten bonden von wafern
CN103477420B (zh) 2011-04-08 2016-11-16 Ev集团E·索尔纳有限责任公司 永久性粘合晶片的方法
JP6040123B2 (ja) * 2013-08-23 2016-12-07 東京エレクトロン株式会社 接合方法および接合システム
JP2014090186A (ja) * 2013-12-04 2014-05-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US10068795B2 (en) * 2014-02-07 2018-09-04 Globalwafers Co., Ltd. Methods for preparing layered semiconductor structures
JP6429179B2 (ja) * 2014-04-25 2018-11-28 ボンドテック株式会社 基板接合装置および基板接合方法
JP6558355B2 (ja) 2016-12-19 2019-08-14 信越半導体株式会社 Ｓｏｉウェーハの製造方法
JP6981356B2 (ja) * 2018-04-24 2021-12-15 東京エレクトロン株式会社 成膜装置及び成膜方法
JP7512761B2 (ja) * 2020-08-19 2024-07-09 住友金属鉱山株式会社 基板接合装置
WO2022070835A1 (ja) * 2020-09-30 2022-04-07 ボンドテック株式会社 基板接合方法および基板接合システム
US20230207397A1 (en) * 2021-12-29 2023-06-29 Tokyo Electron Limited Transistor stacking by wafer bonding

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US5932048A (en) * 1995-04-06 1999-08-03 Komatsu Electronic Metals Co., Ltd. Method of fabricating direct-bonded semiconductor wafers
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US6881644B2 (en) * 1999-04-21 2005-04-19 Silicon Genesis Corporation Smoothing method for cleaved films made using a release layer
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JP4628580B2 (ja) 2001-04-18 2011-02-09 信越半導体株式会社 貼り合せ基板の製造方法
JP2002343565A (ja) * 2001-05-18 2002-11-29 Sharp Corp 有機ｌｅｄ表示パネルの製造方法、その方法により製造された有機ｌｅｄ表示パネル、並びに、その方法に用いられるベースフィルム及び基板
CN1434493A (zh) * 2002-01-23 2003-08-06 联华电子股份有限公司 自生长疏水性纳米分子有机防扩散膜及其制备方法
JP4016701B2 (ja) 2002-04-18 2007-12-05 信越半導体株式会社 貼り合せ基板の製造方法
JP4219660B2 (ja) * 2002-11-18 2009-02-04 信越化学工業株式会社 ウエハダイシング・ダイボンドシート
US6852652B1 (en) * 2003-09-29 2005-02-08 Sharp Laboratories Of America, Inc. Method of making relaxed silicon-germanium on glass via layer transfer

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