JP2010539696A5 - - Google Patents

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Publication number
JP2010539696A5
JP2010539696A5 JP2010524479A JP2010524479A JP2010539696A5 JP 2010539696 A5 JP2010539696 A5 JP 2010539696A5 JP 2010524479 A JP2010524479 A JP 2010524479A JP 2010524479 A JP2010524479 A JP 2010524479A JP 2010539696 A5 JP2010539696 A5 JP 2010539696A5
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JP
Japan
Prior art keywords
substrate
donor
bond strength
receiver
donor substrate
Prior art date
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Application number
JP2010524479A
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English (en)
Japanese (ja)
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JP2010539696A (ja
JP5231555B2 (ja
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Publication date
Priority claimed from FR0757511A external-priority patent/FR2920912B1/fr
Application filed filed Critical
Publication of JP2010539696A publication Critical patent/JP2010539696A/ja
Publication of JP2010539696A5 publication Critical patent/JP2010539696A5/ja
Application granted granted Critical
Publication of JP5231555B2 publication Critical patent/JP5231555B2/ja
Active legal-status Critical Current
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JP2010524479A 2007-09-12 2008-09-11 層転写により構造を製造する方法 Active JP5231555B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0757511A FR2920912B1 (fr) 2007-09-12 2007-09-12 Procede de fabrication d'une structure par transfert de couche
FR0757511 2007-09-12
PCT/EP2008/062018 WO2009034113A1 (en) 2007-09-12 2008-09-11 Method of producing a structure by layer transfer

Publications (3)

Publication Number Publication Date
JP2010539696A JP2010539696A (ja) 2010-12-16
JP2010539696A5 true JP2010539696A5 (enExample) 2012-08-23
JP5231555B2 JP5231555B2 (ja) 2013-07-10

Family

ID=39092009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010524479A Active JP5231555B2 (ja) 2007-09-12 2008-09-11 層転写により構造を製造する方法

Country Status (7)

Country Link
US (1) US8420500B2 (enExample)
EP (1) EP2195836A1 (enExample)
JP (1) JP5231555B2 (enExample)
KR (1) KR101172585B1 (enExample)
CN (1) CN101803002B (enExample)
FR (1) FR2920912B1 (enExample)
WO (1) WO2009034113A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5478166B2 (ja) * 2008-09-11 2014-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8852391B2 (en) * 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
JP5859742B2 (ja) * 2011-04-28 2016-02-16 京セラ株式会社 複合基板
JP5976999B2 (ja) * 2011-05-30 2016-08-24 京セラ株式会社 複合基板
US8709914B2 (en) * 2011-06-14 2014-04-29 International Business Machines Corporation Method for controlled layer transfer
FR3032555B1 (fr) * 2015-02-10 2018-01-19 Soitec Procede de report d'une couche utile
FR3048548B1 (fr) 2016-03-02 2018-03-02 Soitec Procede de determination d'une energie convenable d'implantation dans un substrat donneur et procede de fabrication d'une structure de type semi-conducteur sur isolant
US10504716B2 (en) * 2018-03-15 2019-12-10 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor device and manufacturing method of the same
JP6705472B2 (ja) 2018-06-18 2020-06-03 Tdk株式会社 非可逆回路素子及びこれを用いた通信装置
WO2020213478A1 (ja) * 2019-04-19 2020-10-22 東京エレクトロン株式会社 処理装置及び処理方法
CN114864465B (zh) * 2021-01-20 2025-09-26 中芯国际集成电路制造(北京)有限公司 用于键合的晶圆结构及其形成方法、键合方法
FR3135820B1 (fr) * 2022-05-18 2024-04-26 Commissariat Energie Atomique Procédé de transfert d'une couche depuis un substrat source vers un substrat destination
FR3135819B1 (fr) 2022-05-18 2024-04-26 Commissariat Energie Atomique Procédé de transfert d'une couche depuis un substrat source vers un substrat destination

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE151199T1 (de) * 1986-12-19 1997-04-15 Applied Materials Inc Plasmaätzvorrichtung mit magnetfeldverstärkung
US5298465A (en) * 1990-08-16 1994-03-29 Applied Materials, Inc. Plasma etching system
US5423918A (en) * 1993-09-21 1995-06-13 Applied Materials, Inc. Method for reducing particulate contamination during plasma processing of semiconductor devices
JP3294934B2 (ja) * 1994-03-11 2002-06-24 キヤノン株式会社 半導体基板の作製方法及び半導体基板
FR2842649B1 (fr) * 2002-07-17 2005-06-24 Soitec Silicon On Insulator Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support
JP3996557B2 (ja) * 2003-07-09 2007-10-24 直江津電子工業株式会社 半導体接合ウエーハの製造方法
JP2005347302A (ja) * 2004-05-31 2005-12-15 Canon Inc 基板の製造方法
KR100539266B1 (ko) * 2004-06-02 2005-12-27 삼성전자주식회사 호 절편 형태의 한정부를 가지는 플라즈마 공정 장비
KR100553713B1 (ko) * 2004-06-03 2006-02-24 삼성전자주식회사 플라즈마 식각 장치 및 이 장치를 이용한 포토 마스크의제조 방법
JP4520820B2 (ja) * 2004-10-27 2010-08-11 株式会社日立ハイテクノロジーズ 試料処理装置及び試料処理システム
US7919391B2 (en) * 2004-12-24 2011-04-05 S.O.I.Tec Silicon On Insulator Technologies Methods for preparing a bonding surface of a semiconductor wafer
KR101174871B1 (ko) * 2005-06-18 2012-08-17 삼성디스플레이 주식회사 유기 반도체의 패터닝 방법
US7601271B2 (en) * 2005-11-28 2009-10-13 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion
US7781309B2 (en) * 2005-12-22 2010-08-24 Sumco Corporation Method for manufacturing direct bonded SOI wafer and direct bonded SOI wafer manufactured by the method
JP2007251080A (ja) * 2006-03-20 2007-09-27 Fujifilm Corp プラスチック基板の固定方法、回路基板およびその製造方法

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