CN101803002B - 通过层转移制造结构的方法 - Google Patents

通过层转移制造结构的方法 Download PDF

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Publication number
CN101803002B
CN101803002B CN2008801062027A CN200880106202A CN101803002B CN 101803002 B CN101803002 B CN 101803002B CN 2008801062027 A CN2008801062027 A CN 2008801062027A CN 200880106202 A CN200880106202 A CN 200880106202A CN 101803002 B CN101803002 B CN 101803002B
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substrate
width
donor substrate
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accepting
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Chinese (zh)
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CN101803002A (zh
Inventor
B·苏利耶布歇
S·凯尔迪勒
W·施瓦岑巴赫
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Soitec SA
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Soitec SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
CN2008801062027A 2007-09-12 2008-09-11 通过层转移制造结构的方法 Active CN101803002B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0757511A FR2920912B1 (fr) 2007-09-12 2007-09-12 Procede de fabrication d'une structure par transfert de couche
FR0757511 2007-09-12
PCT/EP2008/062018 WO2009034113A1 (en) 2007-09-12 2008-09-11 Method of producing a structure by layer transfer

Publications (2)

Publication Number Publication Date
CN101803002A CN101803002A (zh) 2010-08-11
CN101803002B true CN101803002B (zh) 2013-01-09

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Family Applications (1)

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CN2008801062027A Active CN101803002B (zh) 2007-09-12 2008-09-11 通过层转移制造结构的方法

Country Status (7)

Country Link
US (1) US8420500B2 (enExample)
EP (1) EP2195836A1 (enExample)
JP (1) JP5231555B2 (enExample)
KR (1) KR101172585B1 (enExample)
CN (1) CN101803002B (enExample)
FR (1) FR2920912B1 (enExample)
WO (1) WO2009034113A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5478166B2 (ja) * 2008-09-11 2014-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8852391B2 (en) * 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
JP5859742B2 (ja) * 2011-04-28 2016-02-16 京セラ株式会社 複合基板
JP5976999B2 (ja) * 2011-05-30 2016-08-24 京セラ株式会社 複合基板
US8709914B2 (en) * 2011-06-14 2014-04-29 International Business Machines Corporation Method for controlled layer transfer
FR3032555B1 (fr) * 2015-02-10 2018-01-19 Soitec Procede de report d'une couche utile
FR3048548B1 (fr) 2016-03-02 2018-03-02 Soitec Procede de determination d'une energie convenable d'implantation dans un substrat donneur et procede de fabrication d'une structure de type semi-conducteur sur isolant
US10504716B2 (en) * 2018-03-15 2019-12-10 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor device and manufacturing method of the same
JP6705472B2 (ja) 2018-06-18 2020-06-03 Tdk株式会社 非可逆回路素子及びこれを用いた通信装置
KR20250078630A (ko) * 2019-04-19 2025-06-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
CN114864465B (zh) * 2021-01-20 2025-09-26 中芯国际集成电路制造(北京)有限公司 用于键合的晶圆结构及其形成方法、键合方法
FR3135820B1 (fr) * 2022-05-18 2024-04-26 Commissariat Energie Atomique Procédé de transfert d'une couche depuis un substrat source vers un substrat destination
FR3135819B1 (fr) * 2022-05-18 2024-04-26 Commissariat Energie Atomique Procédé de transfert d'une couche depuis un substrat source vers un substrat destination

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1881644A (zh) * 2005-06-18 2006-12-20 三星Sdi株式会社 形成有机半导体层图案的方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3752042T2 (de) * 1986-12-19 1997-07-17 Applied Materials Inc Plasmaätzvorrichtung mit Magnetfeldverstärkung
US5298465A (en) * 1990-08-16 1994-03-29 Applied Materials, Inc. Plasma etching system
US5423918A (en) * 1993-09-21 1995-06-13 Applied Materials, Inc. Method for reducing particulate contamination during plasma processing of semiconductor devices
JP3294934B2 (ja) 1994-03-11 2002-06-24 キヤノン株式会社 半導体基板の作製方法及び半導体基板
FR2842649B1 (fr) * 2002-07-17 2005-06-24 Soitec Silicon On Insulator Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support
JP3996557B2 (ja) * 2003-07-09 2007-10-24 直江津電子工業株式会社 半導体接合ウエーハの製造方法
JP2005347302A (ja) * 2004-05-31 2005-12-15 Canon Inc 基板の製造方法
KR100539266B1 (ko) * 2004-06-02 2005-12-27 삼성전자주식회사 호 절편 형태의 한정부를 가지는 플라즈마 공정 장비
KR100553713B1 (ko) * 2004-06-03 2006-02-24 삼성전자주식회사 플라즈마 식각 장치 및 이 장치를 이용한 포토 마스크의제조 방법
JP4520820B2 (ja) * 2004-10-27 2010-08-11 株式会社日立ハイテクノロジーズ 試料処理装置及び試料処理システム
US7919391B2 (en) * 2004-12-24 2011-04-05 S.O.I.Tec Silicon On Insulator Technologies Methods for preparing a bonding surface of a semiconductor wafer
US7601271B2 (en) * 2005-11-28 2009-10-13 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion
US7781309B2 (en) * 2005-12-22 2010-08-24 Sumco Corporation Method for manufacturing direct bonded SOI wafer and direct bonded SOI wafer manufactured by the method
JP2007251080A (ja) * 2006-03-20 2007-09-27 Fujifilm Corp プラスチック基板の固定方法、回路基板およびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1881644A (zh) * 2005-06-18 2006-12-20 三星Sdi株式会社 形成有机半导体层图案的方法

Also Published As

Publication number Publication date
FR2920912A1 (fr) 2009-03-13
US20100304507A1 (en) 2010-12-02
JP5231555B2 (ja) 2013-07-10
US8420500B2 (en) 2013-04-16
JP2010539696A (ja) 2010-12-16
FR2920912B1 (fr) 2010-08-27
WO2009034113A1 (en) 2009-03-19
EP2195836A1 (en) 2010-06-16
KR20100068424A (ko) 2010-06-23
KR101172585B1 (ko) 2012-08-08
CN101803002A (zh) 2010-08-11

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