KR101172585B1 - 층 전사에 의한 구조체 제조 방법 - Google Patents

층 전사에 의한 구조체 제조 방법 Download PDF

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Publication number
KR101172585B1
KR101172585B1 KR1020107007669A KR20107007669A KR101172585B1 KR 101172585 B1 KR101172585 B1 KR 101172585B1 KR 1020107007669 A KR1020107007669 A KR 1020107007669A KR 20107007669 A KR20107007669 A KR 20107007669A KR 101172585 B1 KR101172585 B1 KR 101172585B1
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South Korea
Prior art keywords
substrate
donor substrate
crown
receiver
width
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Korean (ko)
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KR20100068424A (ko
Inventor
브리짓 소울리에르 보우쳇
세바스티엔 케르딜레스
월터 슈워르젠바크
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소이텍
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
KR1020107007669A 2007-09-12 2008-09-11 층 전사에 의한 구조체 제조 방법 Active KR101172585B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0757511A FR2920912B1 (fr) 2007-09-12 2007-09-12 Procede de fabrication d'une structure par transfert de couche
FR0757511 2007-09-12
PCT/EP2008/062018 WO2009034113A1 (en) 2007-09-12 2008-09-11 Method of producing a structure by layer transfer

Publications (2)

Publication Number Publication Date
KR20100068424A KR20100068424A (ko) 2010-06-23
KR101172585B1 true KR101172585B1 (ko) 2012-08-08

Family

ID=39092009

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107007669A Active KR101172585B1 (ko) 2007-09-12 2008-09-11 층 전사에 의한 구조체 제조 방법

Country Status (7)

Country Link
US (1) US8420500B2 (enExample)
EP (1) EP2195836A1 (enExample)
JP (1) JP5231555B2 (enExample)
KR (1) KR101172585B1 (enExample)
CN (1) CN101803002B (enExample)
FR (1) FR2920912B1 (enExample)
WO (1) WO2009034113A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5478166B2 (ja) * 2008-09-11 2014-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8852391B2 (en) * 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
JP5859742B2 (ja) * 2011-04-28 2016-02-16 京セラ株式会社 複合基板
JP5976999B2 (ja) * 2011-05-30 2016-08-24 京セラ株式会社 複合基板
US8709914B2 (en) * 2011-06-14 2014-04-29 International Business Machines Corporation Method for controlled layer transfer
FR3032555B1 (fr) * 2015-02-10 2018-01-19 Soitec Procede de report d'une couche utile
FR3048548B1 (fr) 2016-03-02 2018-03-02 Soitec Procede de determination d'une energie convenable d'implantation dans un substrat donneur et procede de fabrication d'une structure de type semi-conducteur sur isolant
US10504716B2 (en) * 2018-03-15 2019-12-10 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor device and manufacturing method of the same
JP6705472B2 (ja) 2018-06-18 2020-06-03 Tdk株式会社 非可逆回路素子及びこれを用いた通信装置
KR20250078630A (ko) * 2019-04-19 2025-06-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
CN114864465B (zh) * 2021-01-20 2025-09-26 中芯国际集成电路制造(北京)有限公司 用于键合的晶圆结构及其形成方法、键合方法
FR3135820B1 (fr) * 2022-05-18 2024-04-26 Commissariat Energie Atomique Procédé de transfert d'une couche depuis un substrat source vers un substrat destination
FR3135819B1 (fr) * 2022-05-18 2024-04-26 Commissariat Energie Atomique Procédé de transfert d'une couche depuis un substrat source vers un substrat destination

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347302A (ja) * 2004-05-31 2005-12-15 Canon Inc 基板の製造方法
US20060141746A1 (en) 2004-12-24 2006-06-29 Cecile Delattre Methods for forming semiconductor structures
WO2007060145A1 (en) 2005-11-28 2007-05-31 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3752042T2 (de) * 1986-12-19 1997-07-17 Applied Materials Inc Plasmaätzvorrichtung mit Magnetfeldverstärkung
US5298465A (en) * 1990-08-16 1994-03-29 Applied Materials, Inc. Plasma etching system
US5423918A (en) * 1993-09-21 1995-06-13 Applied Materials, Inc. Method for reducing particulate contamination during plasma processing of semiconductor devices
JP3294934B2 (ja) 1994-03-11 2002-06-24 キヤノン株式会社 半導体基板の作製方法及び半導体基板
FR2842649B1 (fr) * 2002-07-17 2005-06-24 Soitec Silicon On Insulator Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support
JP3996557B2 (ja) * 2003-07-09 2007-10-24 直江津電子工業株式会社 半導体接合ウエーハの製造方法
KR100539266B1 (ko) * 2004-06-02 2005-12-27 삼성전자주식회사 호 절편 형태의 한정부를 가지는 플라즈마 공정 장비
KR100553713B1 (ko) * 2004-06-03 2006-02-24 삼성전자주식회사 플라즈마 식각 장치 및 이 장치를 이용한 포토 마스크의제조 방법
JP4520820B2 (ja) * 2004-10-27 2010-08-11 株式会社日立ハイテクノロジーズ 試料処理装置及び試料処理システム
KR101174871B1 (ko) * 2005-06-18 2012-08-17 삼성디스플레이 주식회사 유기 반도체의 패터닝 방법
US7781309B2 (en) * 2005-12-22 2010-08-24 Sumco Corporation Method for manufacturing direct bonded SOI wafer and direct bonded SOI wafer manufactured by the method
JP2007251080A (ja) * 2006-03-20 2007-09-27 Fujifilm Corp プラスチック基板の固定方法、回路基板およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347302A (ja) * 2004-05-31 2005-12-15 Canon Inc 基板の製造方法
US20060141746A1 (en) 2004-12-24 2006-06-29 Cecile Delattre Methods for forming semiconductor structures
WO2007060145A1 (en) 2005-11-28 2007-05-31 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion

Also Published As

Publication number Publication date
FR2920912A1 (fr) 2009-03-13
US20100304507A1 (en) 2010-12-02
JP5231555B2 (ja) 2013-07-10
US8420500B2 (en) 2013-04-16
JP2010539696A (ja) 2010-12-16
FR2920912B1 (fr) 2010-08-27
WO2009034113A1 (en) 2009-03-19
EP2195836A1 (en) 2010-06-16
KR20100068424A (ko) 2010-06-23
CN101803002B (zh) 2013-01-09
CN101803002A (zh) 2010-08-11

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