FR2920912B1 - Procede de fabrication d'une structure par transfert de couche - Google Patents

Procede de fabrication d'une structure par transfert de couche

Info

Publication number
FR2920912B1
FR2920912B1 FR0757511A FR0757511A FR2920912B1 FR 2920912 B1 FR2920912 B1 FR 2920912B1 FR 0757511 A FR0757511 A FR 0757511A FR 0757511 A FR0757511 A FR 0757511A FR 2920912 B1 FR2920912 B1 FR 2920912B1
Authority
FR
France
Prior art keywords
substrate
substrates
donor substrate
recipient
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0757511A
Other languages
English (en)
French (fr)
Other versions
FR2920912A1 (fr
Inventor
Bouchet Brigitte Soulier
Sebastien Kerdiles
Walter Schwarzenbach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0757511A priority Critical patent/FR2920912B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to US12/675,927 priority patent/US8420500B2/en
Priority to CN2008801062027A priority patent/CN101803002B/zh
Priority to KR1020107007669A priority patent/KR101172585B1/ko
Priority to EP08803985A priority patent/EP2195836A1/en
Priority to JP2010524479A priority patent/JP5231555B2/ja
Priority to PCT/EP2008/062018 priority patent/WO2009034113A1/en
Publication of FR2920912A1 publication Critical patent/FR2920912A1/fr
Application granted granted Critical
Publication of FR2920912B1 publication Critical patent/FR2920912B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H10P50/00—

Landscapes

  • Pressure Welding/Diffusion-Bonding (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
FR0757511A 2007-09-12 2007-09-12 Procede de fabrication d'une structure par transfert de couche Active FR2920912B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0757511A FR2920912B1 (fr) 2007-09-12 2007-09-12 Procede de fabrication d'une structure par transfert de couche
CN2008801062027A CN101803002B (zh) 2007-09-12 2008-09-11 通过层转移制造结构的方法
KR1020107007669A KR101172585B1 (ko) 2007-09-12 2008-09-11 층 전사에 의한 구조체 제조 방법
EP08803985A EP2195836A1 (en) 2007-09-12 2008-09-11 Method of producing a structure by layer transfer
US12/675,927 US8420500B2 (en) 2007-09-12 2008-09-11 Method of producing a structure by layer transfer
JP2010524479A JP5231555B2 (ja) 2007-09-12 2008-09-11 層転写により構造を製造する方法
PCT/EP2008/062018 WO2009034113A1 (en) 2007-09-12 2008-09-11 Method of producing a structure by layer transfer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0757511A FR2920912B1 (fr) 2007-09-12 2007-09-12 Procede de fabrication d'une structure par transfert de couche

Publications (2)

Publication Number Publication Date
FR2920912A1 FR2920912A1 (fr) 2009-03-13
FR2920912B1 true FR2920912B1 (fr) 2010-08-27

Family

ID=39092009

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0757511A Active FR2920912B1 (fr) 2007-09-12 2007-09-12 Procede de fabrication d'une structure par transfert de couche

Country Status (7)

Country Link
US (1) US8420500B2 (enExample)
EP (1) EP2195836A1 (enExample)
JP (1) JP5231555B2 (enExample)
KR (1) KR101172585B1 (enExample)
CN (1) CN101803002B (enExample)
FR (1) FR2920912B1 (enExample)
WO (1) WO2009034113A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5478166B2 (ja) * 2008-09-11 2014-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8852391B2 (en) * 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
JP5859742B2 (ja) * 2011-04-28 2016-02-16 京セラ株式会社 複合基板
JP5976999B2 (ja) * 2011-05-30 2016-08-24 京セラ株式会社 複合基板
US8709914B2 (en) * 2011-06-14 2014-04-29 International Business Machines Corporation Method for controlled layer transfer
FR3032555B1 (fr) * 2015-02-10 2018-01-19 Soitec Procede de report d'une couche utile
FR3048548B1 (fr) 2016-03-02 2018-03-02 Soitec Procede de determination d'une energie convenable d'implantation dans un substrat donneur et procede de fabrication d'une structure de type semi-conducteur sur isolant
US10504716B2 (en) * 2018-03-15 2019-12-10 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor device and manufacturing method of the same
JP6705472B2 (ja) 2018-06-18 2020-06-03 Tdk株式会社 非可逆回路素子及びこれを用いた通信装置
KR102814022B1 (ko) * 2019-04-19 2025-05-29 도쿄엘렉트론가부시키가이샤 처리 장치 및 처리 방법
CN114864465B (zh) * 2021-01-20 2025-09-26 中芯国际集成电路制造(北京)有限公司 用于键合的晶圆结构及其形成方法、键合方法
FR3135820B1 (fr) 2022-05-18 2024-04-26 Commissariat Energie Atomique Procédé de transfert d'une couche depuis un substrat source vers un substrat destination
FR3135819B1 (fr) * 2022-05-18 2024-04-26 Commissariat Energie Atomique Procédé de transfert d'une couche depuis un substrat source vers un substrat destination

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0272142B1 (en) * 1986-12-19 1994-09-07 Applied Materials, Inc. Magnetic field enhanced plasma etch reactor
US5298465A (en) * 1990-08-16 1994-03-29 Applied Materials, Inc. Plasma etching system
US5423918A (en) 1993-09-21 1995-06-13 Applied Materials, Inc. Method for reducing particulate contamination during plasma processing of semiconductor devices
JP3294934B2 (ja) 1994-03-11 2002-06-24 キヤノン株式会社 半導体基板の作製方法及び半導体基板
FR2842649B1 (fr) * 2002-07-17 2005-06-24 Soitec Silicon On Insulator Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support
JP3996557B2 (ja) * 2003-07-09 2007-10-24 直江津電子工業株式会社 半導体接合ウエーハの製造方法
JP2005347302A (ja) * 2004-05-31 2005-12-15 Canon Inc 基板の製造方法
KR100539266B1 (ko) * 2004-06-02 2005-12-27 삼성전자주식회사 호 절편 형태의 한정부를 가지는 플라즈마 공정 장비
KR100553713B1 (ko) * 2004-06-03 2006-02-24 삼성전자주식회사 플라즈마 식각 장치 및 이 장치를 이용한 포토 마스크의제조 방법
JP4520820B2 (ja) * 2004-10-27 2010-08-11 株式会社日立ハイテクノロジーズ 試料処理装置及び試料処理システム
US7919391B2 (en) * 2004-12-24 2011-04-05 S.O.I.Tec Silicon On Insulator Technologies Methods for preparing a bonding surface of a semiconductor wafer
KR101174871B1 (ko) * 2005-06-18 2012-08-17 삼성디스플레이 주식회사 유기 반도체의 패터닝 방법
US7601271B2 (en) * 2005-11-28 2009-10-13 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion
US7781309B2 (en) * 2005-12-22 2010-08-24 Sumco Corporation Method for manufacturing direct bonded SOI wafer and direct bonded SOI wafer manufactured by the method
JP2007251080A (ja) * 2006-03-20 2007-09-27 Fujifilm Corp プラスチック基板の固定方法、回路基板およびその製造方法

Also Published As

Publication number Publication date
US8420500B2 (en) 2013-04-16
KR20100068424A (ko) 2010-06-23
WO2009034113A1 (en) 2009-03-19
CN101803002B (zh) 2013-01-09
JP5231555B2 (ja) 2013-07-10
US20100304507A1 (en) 2010-12-02
CN101803002A (zh) 2010-08-11
EP2195836A1 (en) 2010-06-16
KR101172585B1 (ko) 2012-08-08
FR2920912A1 (fr) 2009-03-13
JP2010539696A (ja) 2010-12-16

Similar Documents

Publication Publication Date Title
FR2920912B1 (fr) Procede de fabrication d'une structure par transfert de couche
TW200616014A (en) Method for manufacturing compound material wafers
WO2008058131A3 (en) Method and structure for thick layer transfer using a linear accelerator
DE60205358D1 (de) Verfahren zum selektiven transferieren von halbleiter-chips von einem träger zu einem empfangssubstrat
WO2009094558A3 (en) Method for reversibly mounting a device wafer to a carrier substrate
WO2010042577A3 (en) Advanced platform for processing crystalline silicon solar cells
EP0961312A3 (en) SOI Substrate formed by bonding
WO2007110515A3 (fr) Procede de detachement d'un film mince par fusion de precipites
JP2009516929A5 (enExample)
AR062071A1 (es) Celula fotocoltaica organica de alta eficiencia y metodo de fabricacion
TW200715380A (en) Process for lateral disjonting of a semiconductor wafer and opto-electronic element
CN101980393A (zh) 大面积柔性光电器件的制造方法
EP2437281A4 (en) SOS SUBSTRATE WITH LOW SURFACE DEFECT DENSITY
WO2009092799A3 (fr) Objet comportant un element graphique reporte sur un support et procede de realisation d'un tel objet
WO2007024549A3 (en) Semiconductor on glass insulator with deposited barrier layer
FR2924273B1 (fr) Procede de moderation de deformation
MA34759B1 (fr) Interface améliorée entre une couche de matériau à base d'éléments des groupes i-iii-vi2 et un substrat en molybdène
KR20110068953A (ko) 에칭된 반도체 구조물의 패시베이션
WO2013059762A8 (en) Universal nanopatternable interfacial bonding
WO2008139684A1 (ja) Ｓｏｉ基板の製造方法及びｓｏｉ基板
KR101630932B1 (ko) 전자소자용 기판, 그의 제조방법 및 그를 포함하는 박막형 태양전지
CN104106131B (zh) 用于处理被涂层的衬底的处理盒、装置和方法
WO2004081974A3 (en) A method of producing substrates or components on substrates involving transfer of a useful layer, for microelectronics, optoelectronics, or optics
ATE469438T1 (de) Übertragungsverfahren mit einer behandlung einer zu verbindenden oberfläche
SG162813A1 (en) Double plasma utbox

Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120423

PLFP Fee payment

Year of fee payment: 10

PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12

PLFP Fee payment

Year of fee payment: 13

PLFP Fee payment

Year of fee payment: 14

PLFP Fee payment

Year of fee payment: 15

PLFP Fee payment

Year of fee payment: 16

PLFP Fee payment

Year of fee payment: 17

PLFP Fee payment

Year of fee payment: 18

PLFP Fee payment

Year of fee payment: 19