JP2007509499A5 - - Google Patents

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Publication number
JP2007509499A5
JP2007509499A5 JP2006536603A JP2006536603A JP2007509499A5 JP 2007509499 A5 JP2007509499 A5 JP 2007509499A5 JP 2006536603 A JP2006536603 A JP 2006536603A JP 2006536603 A JP2006536603 A JP 2006536603A JP 2007509499 A5 JP2007509499 A5 JP 2007509499A5
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JP
Japan
Prior art keywords
dielectric layer
forming
semiconductor substrate
hydrophobic surface
scrubbing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006536603A
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English (en)
Japanese (ja)
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JP2007509499A (ja
JP4659751B2 (ja
Filing date
Publication date
Priority claimed from US10/690,060 external-priority patent/US6902440B2/en
Application filed filed Critical
Publication of JP2007509499A publication Critical patent/JP2007509499A/ja
Publication of JP2007509499A5 publication Critical patent/JP2007509499A5/ja
Application granted granted Critical
Publication of JP4659751B2 publication Critical patent/JP4659751B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006536603A 2003-10-21 2004-07-30 低ｋ誘電体を半導体製造プロセスにおいて形成する方法 Expired - Fee Related JP4659751B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/690,060 US6902440B2 (en) 2003-10-21 2003-10-21 Method of forming a low K dielectric in a semiconductor manufacturing process
PCT/US2004/024904 WO2005045914A1 (en) 2003-10-21 2004-07-30 Method of forming a low k dielectric in a semiconductor manufacturing process

Publications (3)

Publication Number Publication Date
JP2007509499A JP2007509499A (ja) 2007-04-12
JP2007509499A5 true JP2007509499A5 (enExample) 2007-09-13
JP4659751B2 JP4659751B2 (ja) 2011-03-30

Family

ID=34521542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006536603A Expired - Fee Related JP4659751B2 (ja) 2003-10-21 2004-07-30 低ｋ誘電体を半導体製造プロセスにおいて形成する方法

Country Status (6)

Country Link
US (1) US6902440B2 (enExample)
JP (1) JP4659751B2 (enExample)
KR (1) KR101054676B1 (enExample)
CN (1) CN100501937C (enExample)
TW (1) TW200515532A (enExample)
WO (1) WO2005045914A1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6913992B2 (en) 2003-03-07 2005-07-05 Applied Materials, Inc. Method of modifying interlayer adhesion
US7030041B2 (en) 2004-03-15 2006-04-18 Applied Materials Inc. Adhesion improvement for low k dielectrics
US7253125B1 (en) 2004-04-16 2007-08-07 Novellus Systems, Inc. Method to improve mechanical strength of low-k dielectric film using modulated UV exposure
US7112541B2 (en) * 2004-05-06 2006-09-26 Applied Materials, Inc. In-situ oxide capping after CVD low k deposition
US9659769B1 (en) 2004-10-22 2017-05-23 Novellus Systems, Inc. Tensile dielectric films using UV curing
US8889233B1 (en) 2005-04-26 2014-11-18 Novellus Systems, Inc. Method for reducing stress in porous dielectric films
US8454750B1 (en) 2005-04-26 2013-06-04 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
US8980769B1 (en) 2005-04-26 2015-03-17 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
US7189658B2 (en) * 2005-05-04 2007-03-13 Applied Materials, Inc. Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile
US7273823B2 (en) * 2005-06-03 2007-09-25 Applied Materials, Inc. Situ oxide cap layer development
US7498270B2 (en) * 2005-09-30 2009-03-03 Tokyo Electron Limited Method of forming a silicon oxynitride film with tensile stress
JP4422671B2 (ja) * 2005-12-06 2010-02-24 トヨタ自動車株式会社 半導体装置とその製造方法
US8987085B2 (en) * 2006-08-01 2015-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for improving uniformity of cap layers
US20100267231A1 (en) * 2006-10-30 2010-10-21 Van Schravendijk Bart Apparatus for uv damage repair of low k films prior to copper barrier deposition
US8465991B2 (en) 2006-10-30 2013-06-18 Novellus Systems, Inc. Carbon containing low-k dielectric constant recovery using UV treatment
US10037905B2 (en) * 2009-11-12 2018-07-31 Novellus Systems, Inc. UV and reducing treatment for K recovery and surface clean in semiconductor processing
US7851232B2 (en) * 2006-10-30 2010-12-14 Novellus Systems, Inc. UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
US8211510B1 (en) 2007-08-31 2012-07-03 Novellus Systems, Inc. Cascaded cure approach to fabricate highly tensile silicon nitride films
KR100928502B1 (ko) * 2007-11-05 2009-11-26 주식회사 동부하이텍 반도체 소자 및 그의 제조 방법
US9050623B1 (en) 2008-09-12 2015-06-09 Novellus Systems, Inc. Progressive UV cure
JP5507909B2 (ja) 2009-07-14 2014-05-28 東京エレクトロン株式会社 成膜方法
JP5398853B2 (ja) * 2012-01-26 2014-01-29 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN103854962B (zh) * 2012-11-28 2017-05-17 中芯国际集成电路制造(上海)有限公司 晶圆刻蚀后的清洗方法
CN104681404A (zh) * 2013-11-27 2015-06-03 中芯国际集成电路制造(上海)有限公司 接触孔的制作方法和半导体器件的湿法清洗方法
US9437484B2 (en) * 2014-10-17 2016-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Etch stop layer in integrated circuits
KR101611133B1 (ko) * 2015-05-18 2016-04-08 성균관대학교산학협력단 3차원 구조의 가스 센서 및 이의 제조방법
US10008382B2 (en) * 2015-07-30 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having a porous low-k structure
US9847221B1 (en) 2016-09-29 2017-12-19 Lam Research Corporation Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing
JP6989207B2 (ja) 2018-05-15 2022-01-05 住友電工デバイス・イノベーション株式会社 キャパシタの製造方法
CN109994371B (zh) * 2019-03-26 2021-10-15 上海华力集成电路制造有限公司 一种改善氮掺杂碳化物堆叠后的清洁产生水痕的方法
CN110444468A (zh) * 2019-08-29 2019-11-12 上海华力微电子有限公司 一种消除生成硬掩模ndc层后产生的凸块缺陷的方法
KR102665267B1 (ko) * 2022-10-06 2024-05-13 한국생명공학연구원 감도가 개선된 국소 표면 플라즈몬 공명 센서 및 이의 제조방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US114000A (en) * 1871-04-25 Improvement in buggies
US87534A (en) * 1869-03-09 Improvement in feather-renovators
US68853A (en) * 1867-09-17 peters
US1089643A (en) * 1913-04-02 1914-03-10 William O Hoppe Preboiler for steam-boilers.
US5607773A (en) * 1994-12-20 1997-03-04 Texas Instruments Incorporated Method of forming a multilevel dielectric
US5944906A (en) * 1996-05-24 1999-08-31 Micron Technology Inc Wet cleans for composite surfaces
JP3028080B2 (ja) * 1997-06-18 2000-04-04 日本電気株式会社 半導体装置の構造およびその製造方法
JPH11251312A (ja) * 1998-03-06 1999-09-17 Matsushita Electron Corp 半導体装置の製造方法
US6468362B1 (en) 1999-08-25 2002-10-22 Applied Materials, Inc. Method and apparatus for cleaning/drying hydrophobic wafers
US6531412B2 (en) 2001-08-10 2003-03-11 International Business Machines Corporation Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
US20030087534A1 (en) 2001-09-10 2003-05-08 Rensselaer Polytechnic Institute Surface modification for barrier to ionic penetration
CN1179613C (zh) * 2001-09-20 2004-12-08 联华电子股份有限公司 一种改善有机低介电常数层附着力的表面处理方法
JP2003188254A (ja) 2001-12-18 2003-07-04 Hitachi Ltd 半導体装置の製造方法および半導体装置
US20030155657A1 (en) * 2002-02-14 2003-08-21 Nec Electronics Corporation Manufacturing method of semiconductor device
US6812167B2 (en) * 2002-06-05 2004-11-02 Taiwan Semiconductor Manufacturing Co., Ltd Method for improving adhesion between dielectric material layers

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