JP2005317699A5 - - Google Patents

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Publication number
JP2005317699A5
JP2005317699A5 JP2004132677A JP2004132677A JP2005317699A5 JP 2005317699 A5 JP2005317699 A5 JP 2005317699A5 JP 2004132677 A JP2004132677 A JP 2004132677A JP 2004132677 A JP2004132677 A JP 2004132677A JP 2005317699 A5 JP2005317699 A5 JP 2005317699A5
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JP
Japan
Prior art keywords
mask
reaction product
conductive layer
etching
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004132677A
Other languages
English (en)
Japanese (ja)
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JP2005317699A (ja
JP4519512B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004132677A priority Critical patent/JP4519512B2/ja
Priority claimed from JP2004132677A external-priority patent/JP4519512B2/ja
Priority to US11/099,628 priority patent/US7432211B2/en
Priority to CN2005100684632A priority patent/CN1691292B/zh
Publication of JP2005317699A publication Critical patent/JP2005317699A/ja
Publication of JP2005317699A5 publication Critical patent/JP2005317699A5/ja
Application granted granted Critical
Publication of JP4519512B2 publication Critical patent/JP4519512B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004132677A 2004-04-28 2004-04-28 半導体装置の作製方法、除去方法 Expired - Fee Related JP4519512B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004132677A JP4519512B2 (ja) 2004-04-28 2004-04-28 半導体装置の作製方法、除去方法
US11/099,628 US7432211B2 (en) 2004-04-28 2005-04-06 Method for manufacturing semiconductor device
CN2005100684632A CN1691292B (zh) 2004-04-28 2005-04-28 用于制造半导体器件的方法和电子器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004132677A JP4519512B2 (ja) 2004-04-28 2004-04-28 半導体装置の作製方法、除去方法

Publications (3)

Publication Number Publication Date
JP2005317699A JP2005317699A (ja) 2005-11-10
JP2005317699A5 true JP2005317699A5 (enExample) 2007-06-07
JP4519512B2 JP4519512B2 (ja) 2010-08-04

Family

ID=35185970

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004132677A Expired - Fee Related JP4519512B2 (ja) 2004-04-28 2004-04-28 半導体装置の作製方法、除去方法

Country Status (3)

Country Link
US (1) US7432211B2 (enExample)
JP (1) JP4519512B2 (enExample)
CN (1) CN1691292B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5352081B2 (ja) 2006-12-20 2013-11-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2009033727A (ja) * 2007-06-22 2009-02-12 Semiconductor Energy Lab Co Ltd 半導体装置
KR101892430B1 (ko) * 2009-10-21 2018-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2024197615A1 (zh) * 2023-03-29 2024-10-03 京东方科技集团股份有限公司 金属网格的制备方法和天线的制备方法

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US5298112A (en) * 1987-08-28 1994-03-29 Kabushiki Kaisha Toshiba Method for removing composite attached to material by dry etching
JPH065563A (ja) 1992-06-19 1994-01-14 Oki Electric Ind Co Ltd レジストのアッシング方法
US5427622A (en) * 1993-02-12 1995-06-27 International Business Machines Corporation Method for uniform cleaning of wafers using megasonic energy
US5387556A (en) * 1993-02-24 1995-02-07 Applied Materials, Inc. Etching aluminum and its alloys using HC1, C1-containing etchant and N.sub.2
JPH07326609A (ja) * 1994-04-07 1995-12-12 Matsushita Electron Corp 半導体装置の製造方法
KR0148610B1 (ko) * 1994-07-28 1998-12-01 김주용 반도체 소자의 패턴 형성방법
JPH08181148A (ja) * 1994-12-27 1996-07-12 Kawasaki Steel Corp 半導体装置の製造方法
IL115931A0 (en) * 1995-11-09 1996-01-31 Oramir Semiconductor Ltd Laser stripping improvement by modified gas composition
US6004839A (en) * 1996-01-17 1999-12-21 Nec Corporation Semiconductor device with conductive plugs
JPH09213704A (ja) * 1996-02-05 1997-08-15 Mitsubishi Gas Chem Co Inc 半導体装置の製造方法
JPH09213703A (ja) 1996-02-05 1997-08-15 Matsushita Electron Corp 半導体装置の製造方法
JP3574270B2 (ja) 1996-04-17 2004-10-06 三菱電機株式会社 Ａｌテーパドライエッチング方法
TW376547B (en) * 1997-03-27 1999-12-11 Matsushita Electric Industrial Co Ltd Method and apparatus for plasma processing
JPH10303197A (ja) * 1997-04-24 1998-11-13 Matsushita Electron Corp 半導体装置の製造方法
US6033993A (en) * 1997-09-23 2000-03-07 Olin Microelectronic Chemicals, Inc. Process for removing residues from a semiconductor substrate
KR100252889B1 (ko) * 1997-11-14 2000-04-15 김영환 백금식각방법
KR100269323B1 (ko) * 1998-01-16 2000-10-16 윤종용 반도체장치의백금막식각방법
US6136515A (en) * 1998-06-30 2000-10-24 United Integrated Circuits Corp. Method for removing photoresist in metallization process
AUPP590798A0 (en) * 1998-09-14 1998-10-08 Commonwealth Scientific And Industrial Research Organisation Method of manufacture of high temperature superconductors
JP4165845B2 (ja) * 1998-12-07 2008-10-15 株式会社エフオーアイ 表面処理方法および洗浄装置
JP3257533B2 (ja) * 1999-01-25 2002-02-18 日本電気株式会社 無機反射防止膜を使った配線形成方法
EP1049167A3 (en) * 1999-04-30 2007-10-24 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2001035808A (ja) * 1999-07-22 2001-02-09 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法
US6461923B1 (en) * 1999-08-18 2002-10-08 Advanced Micro Devices, Inc. Sidewall spacer etch process for improved silicide formation
US6475966B1 (en) * 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal
JP4717295B2 (ja) * 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
JP2003152108A (ja) * 2002-08-22 2003-05-23 Hitachi Ltd 半導体集積回路装置の製造方法
JP4683817B2 (ja) * 2002-09-27 2011-05-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6989358B2 (en) * 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US7485579B2 (en) * 2002-12-13 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
CN100339957C (zh) * 2003-10-24 2007-09-26 上海宏力半导体制造有限公司 在金属层蚀刻后移除光阻的方法

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