JP2008524851A5 - - Google Patents

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Publication number
JP2008524851A5
JP2008524851A5 JP2007546765A JP2007546765A JP2008524851A5 JP 2008524851 A5 JP2008524851 A5 JP 2008524851A5 JP 2007546765 A JP2007546765 A JP 2007546765A JP 2007546765 A JP2007546765 A JP 2007546765A JP 2008524851 A5 JP2008524851 A5 JP 2008524851A5
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JP
Japan
Prior art keywords
etch
deposition
gas
layer
critical dimension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007546765A
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English (en)
Japanese (ja)
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JP2008524851A (ja
Filing date
Publication date
Priority claimed from US11/016,455 external-priority patent/US20060134917A1/en
Application filed filed Critical
Publication of JP2008524851A publication Critical patent/JP2008524851A/ja
Publication of JP2008524851A5 publication Critical patent/JP2008524851A5/ja
Withdrawn legal-status Critical Current

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JP2007546765A 2004-12-16 2005-12-06 エッチマスクの特徴部の限界寸法の低減 Withdrawn JP2008524851A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/016,455 US20060134917A1 (en) 2004-12-16 2004-12-16 Reduction of etch mask feature critical dimensions
PCT/US2005/044505 WO2006065630A2 (en) 2004-12-16 2005-12-06 Reduction of etch mask feature critical dimensions

Publications (2)

Publication Number Publication Date
JP2008524851A JP2008524851A (ja) 2008-07-10
JP2008524851A5 true JP2008524851A5 (enExample) 2009-01-29

Family

ID=36588391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007546765A Withdrawn JP2008524851A (ja) 2004-12-16 2005-12-06 エッチマスクの特徴部の限界寸法の低減

Country Status (7)

Country Link
US (1) US20060134917A1 (enExample)
JP (1) JP2008524851A (enExample)
KR (1) KR20070092282A (enExample)
CN (1) CN100543946C (enExample)
IL (1) IL183814A0 (enExample)
TW (1) TW200641519A (enExample)
WO (1) WO2006065630A2 (enExample)

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CN110010464B (zh) * 2017-12-25 2023-07-14 东京毅力科创株式会社 处理基板的方法
KR102893736B1 (ko) 2018-05-14 2025-11-28 브루커 스페이셜 바이올로지, 인크. 화학 조성물 및 이의 사용 방법
US10818508B2 (en) * 2018-10-17 2020-10-27 Nanya Technology Corporation Semiconductor structure and method for preparing the same
JP2021174902A (ja) * 2020-04-27 2021-11-01 東京エレクトロン株式会社 処理方法及び基板処理装置
CN116031203A (zh) * 2022-11-30 2023-04-28 联合微电子中心有限责任公司 半导体器件接触孔的制备方法
US12224160B2 (en) 2023-05-23 2025-02-11 Tokyo Electron Limited Topographic selective deposition
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