JP2008538857A5 - - Google Patents

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Publication number
JP2008538857A5
JP2008538857A5 JP2008500771A JP2008500771A JP2008538857A5 JP 2008538857 A5 JP2008538857 A5 JP 2008538857A5 JP 2008500771 A JP2008500771 A JP 2008500771A JP 2008500771 A JP2008500771 A JP 2008500771A JP 2008538857 A5 JP2008538857 A5 JP 2008538857A5
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JP
Japan
Prior art keywords
mask
photoresist
forming
sidewall
gas
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Application number
JP2008500771A
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English (en)
Japanese (ja)
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JP2008538857A (ja
JP5070196B2 (ja
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Priority claimed from US11/076,087 external-priority patent/US7241683B2/en
Priority claimed from US11/223,363 external-priority patent/US7491647B2/en
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Publication of JP2008538857A publication Critical patent/JP2008538857A/ja
Publication of JP2008538857A5 publication Critical patent/JP2008538857A5/ja
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Publication of JP5070196B2 publication Critical patent/JP5070196B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008500771A 2005-03-08 2006-03-02 エッチングプロセスのための安定化したフォトレジスト構成 Expired - Fee Related JP5070196B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/076,087 2005-03-08
US11/076,087 US7241683B2 (en) 2005-03-08 2005-03-08 Stabilized photoresist structure for etching process
US11/223,363 US7491647B2 (en) 2005-03-08 2005-09-09 Etch with striation control
US11/223,363 2005-09-09
PCT/US2006/007643 WO2006096528A2 (en) 2005-03-08 2006-03-02 Stabilized photoresist structure for etching process

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012108728A Division JP2012151510A (ja) 2005-03-08 2012-05-10 エッチングプロセスのための安定化したフォトレジスト構成

Publications (3)

Publication Number Publication Date
JP2008538857A JP2008538857A (ja) 2008-11-06
JP2008538857A5 true JP2008538857A5 (enExample) 2011-12-01
JP5070196B2 JP5070196B2 (ja) 2012-11-07

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ID=36782308

Family Applications (2)

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JP2008500771A Expired - Fee Related JP5070196B2 (ja) 2005-03-08 2006-03-02 エッチングプロセスのための安定化したフォトレジスト構成
JP2012108728A Withdrawn JP2012151510A (ja) 2005-03-08 2012-05-10 エッチングプロセスのための安定化したフォトレジスト構成

Family Applications After (1)

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JP2012108728A Withdrawn JP2012151510A (ja) 2005-03-08 2012-05-10 エッチングプロセスのための安定化したフォトレジスト構成

Country Status (8)

Country Link
US (2) US7491647B2 (enExample)
EP (1) EP1856717A2 (enExample)
JP (2) JP5070196B2 (enExample)
KR (2) KR101274382B1 (enExample)
IL (1) IL185743A (enExample)
SG (1) SG144148A1 (enExample)
TW (1) TWI396938B (enExample)
WO (1) WO2006096528A2 (enExample)

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JP7323409B2 (ja) * 2019-10-01 2023-08-08 東京エレクトロン株式会社 基板処理方法、及び、プラズマ処理装置
JP2021174902A (ja) * 2020-04-27 2021-11-01 東京エレクトロン株式会社 処理方法及び基板処理装置
JP7320554B2 (ja) * 2021-04-27 2023-08-03 株式会社アルバック エッチング方法
CN120809574B (zh) * 2025-09-16 2025-11-21 上海邦芯半导体科技有限公司 硬掩膜刻蚀方法及刻蚀设备

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