502300 7584twf.doc/Oog A7 五 發明說明（ 本發明 特別是有關 寸的方法。 隨著半 有關一種微影製程（Lithography pr〇cess)，巨 種減小圖案間隙（Spacing)或開口（〇pen叫)尺 體元件的尺寸日漸縮小，對微影製程之 度(ResoluUon)的要求健來愈高。由於歸 主要係由曝光光源的波長（Wavelength)來決定， (或再加上触刻）製程所得之罩幕層圖案（％&^ & 必有Γ定的跑離，或是說罩幕層中之開口必有〜定的大 間 小。當此罩幕層係爲一蝕刻罩幕層時，即表示其 待蝕__的間㈣開口尺寸無法再行義。 因此’本發明之目的即是提出一種減小圖案 □尺寸的方^ 間隙或開 J力法，其可在微影製程解析度固定之情形下，… 小罩幕層圖案之間隙或開口的尺寸。 _ 首先ΪΪ明2小圖案間隙或開口尺寸的方法步驟如下: 目尤従u棊底，再於此基底上設置一層具有圖 層。接著在此具有圖案的罩幕層上，設置一層圖案 激 層相似的材料層，並控制此材料層於罩幕層之上方ς幕 -------------.·裝·-- (請先閱讀背面之注意事項^4||寫本頁> a^T· _線· 經濟部智慧財產局員工消費合作社印製502300 7584twf.doc / Oog A7 Five invention descriptions (The present invention is particularly related to the inch method. With the semi-relationship of a lithography process (Lithography pr cess), the giant species reduce the pattern gap (Spacing) or opening (〇pen called ) The size of the ruler element is gradually shrinking, and the requirements for the lithography process (ResoluUon) are getting stronger. Since the return is mainly determined by the wavelength of the exposure light source (Wavelength), (or plus the touch-etching) process The pattern of the mask layer (% & ^ & must have a fixed runaway, or the opening in the mask layer must have a large and small size. When the mask layer is an etched mask layer It means that the size of the gap between the __ to be etched can no longer be defined. Therefore, the purpose of the present invention is to propose a method to reduce the size of the pattern □ gap or open J force method, which can be used in the lithography process resolution In the fixed situation, ... the size of the gap or opening of the small cover curtain layer pattern. _ First, the method of the 2 small pattern gap or opening size is as follows: Muyou bottom, and then a layer with a layer on this substrate . Then there is a patterned curtain On the layer, set up a layer of material with a similar pattern as the stimulus layer, and control this material layer above the cover layer. Curtain -------------. ···· (Please read the back first Precautions ^ 4 || Write this page > a ^ T · _line · Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs
7処丨」付眉，、 义。然後以卜 述罩幂層與材料層所構成之圖案爲罩幕，對此 上 刻。 先®進行蝕 上述之第一厚度即爲欲使圖案間隙或開Γ 龠莳 八J减少的 見k ’如献使圖案間隙或開口尺寸減少的寬度 J , 則 一 的厚度須在 可接受範圍之內，且更伴爲〇,以免防礙後續製程 )享度即須愈大。另外，基底上方之材料層 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 502300 五 經濟部智慧財產局員工消費合作社印製 7584twf.doc/009 發明說明（λ> ) 〜- 這些後續製程例如是蝕刻或離子植入製程，宜 、 — 升必須蝕穿或 穿過基底上方的材料層，故此處之材料層的厚度臂、: 制。再者，罩幕層例如是一光阻層、一硬罩幕層1曰 離子植入罩幕層，且材料層例如是一高分子材料層—疋/ 成方法例如是化學氣相沈積法（CVD)。 ’其形 如上所述，由於罩幕層圖案之側壁形成有材料層，故 可達到縮小罩幕層圖案之間隙或開口尺寸的目的。再 由於本發明可以縮減罩幕層圖案之間隙或開口尺寸，故# 此罩幕層爲蝕刻罩幕層時，其所定義之待蝕刻層圖案的^ 隙或開口尺寸即得以縮小。舉例來說，當此蝕刻罩幕層戶^ 定義之待蝕刻層爲一導電層時，以此方法即可形成較寬的 導線’其阻値（Resistance)亦較低。 此外，本發明所提之減小圖案間隙或開口尺寸的方法 可加以修改，藉以增強蝕刻罩幕層之抗蝕刻能力。此作法 係在待蝕刻層上之蝕刻罩幕層圖案上形成較厚的材料層， 而在待蝕刻層上形成較薄的材料層，其形成方法例如 擇性沈積法，且厚度更佳爲〇。 w、 如上所述，由於本發明更可在蝕刻罩幕層圖案上形成 較Ιί的材料層，所以在後續蝕刻製程中，當待餓刻層上較 薄的材料層被完全蝕去，而使此待蝕刻層開始被蝕刻時， 蝕刻罩幕層圖案上方尙留有一層材料層。此剩餘之材料層 即可抵指乾蝕刻製程中的電漿，等於是增加了蝕刻罩幕層 的抗蝕刻能力。 爲讓本發明之上述目的、特徵、和優點能更明顯易懂， (請先閱讀背面之注意事項HI寫本頁) 裝7 places 丨 "Frow eyebrows, righteousness. Then use the pattern composed of the mask layer and the material layer as the mask, and this is engraved. First, the first thickness described above is to reduce the pattern gap or opening. If the width J to reduce the pattern gap or opening size is provided, the thickness of one must be within an acceptable range. , And it is accompanied by 0, so as not to hinder subsequent processes) the enjoyment must be greater. In addition, the material layer above the substrate is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 502300 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 7584twf.doc / 009 Description of the Invention (λ >) ~ -These subsequent processes are, for example, etching or ion implantation processes. It is advisable to — liters must penetrate or pass through the material layer above the substrate, so the thickness of the material layer here is: Furthermore, the mask layer is, for example, a photoresist layer, a hard mask layer, an ion implantation mask layer, and the material layer is, for example, a polymer material layer—the method of forming is, for example, a chemical vapor deposition method ( CVD). Its shape As described above, since the material layer is formed on the sidewall of the mask layer pattern, the purpose of reducing the gap or opening size of the mask layer pattern can be achieved. Since the present invention can reduce the gap or opening size of the mask layer pattern, when the mask layer is an etching mask layer, the gap or opening size of the layer pattern to be etched defined by the mask layer can be reduced. For example, when the layer to be etched defined by the etching mask layer is a conductive layer, a wider wire can be formed by this method and its resistance is lower. In addition, the method for reducing the pattern gap or opening size mentioned in the present invention can be modified to enhance the etching resistance of the etching mask layer. This method is to form a thicker material layer on the pattern of the etch mask layer on the layer to be etched, and to form a thinner material layer on the layer to be etched. The formation method is, for example, selective deposition, and the thickness is better. . w. As described above, since the present invention can further form a material layer on the pattern of the etching mask layer, in the subsequent etching process, when the thinner material layer on the layer to be etched is completely etched, When the layer to be etched starts to be etched, a layer of material remains above the pattern of the etching mask layer. The remaining material layer can offset the plasma in the dry etching process, which is equivalent to increasing the etching resistance of the etching mask layer. In order to make the above objects, features, and advantages of the present invention more comprehensible, (please read the note on the back first to write this page)
502300 7584twf. doc/009 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（)） 下文特舉一較佳實施例，並配合所附圖式，作詳細:說明女口 下： 圖式之簡單說明： 第1〜2圖所繪示爲本發明較佳實施例之縮小光_ 間隙尺寸的方法；以& _ 第3A〜3B圖係接續第2圖，其所繪示爲後續触刻製 程中光阻層、高分子材料層與待蝕刻層的變化。 ％ 圖式之標號說明： 100 :基底（Substrate) 110 :待蝕刻層 110a :圖案化之待蝕刻層 120 ··抗反射層（Anti-reflection Coating，ARC) 130 :光阻圖案（Photoresist Pattern) 140 ··電槳（Plasma) 150 :高分子材料層(Polymer Layer) 160 :蝕刻用電漿 a:光阻圖案上之高分子材料層的厚度 b:抗反射層上之筒分子材料層的厚度 較佳實施例說明 本發明之較佳實施例係以縮小光阻圖案之間隙尺寸的 過程作說明，且此光阻層係作爲一蝕刻罩幕層。·不過熟習 此技藝者應能明瞭，本發明亦可用來縮小光阻層中之開口 的尺寸，或是縮小其他各種材質或功用之罩幕層的圖案間 隙或開口尺寸。 本紙張尺度適用中國國家標準（CNS)A4規格（2】〇 X 297公爱） 2清先閱讀背面之注意事項 本頁) --裝 線· 502300 7 584twf. doc/009 A7 B7 ^_I___ 經濟部智慧財產局員工消費合作社印製 發明說明（4) 請參照第1〜2圖，其所繪示爲本發明較佳實施例之縮 小光阻圖案間隙的方法 請參照第1圖，首先提供基底1〇〇，其上已形成有一一 待蝕刻層110、待蝕刻層110上之抗反射層，以及作 爲罩幕層的光阻圖案1 3 0。其中’待蝕刻層1 1 〇例如爲一 導電層’抗反射層120係用來減少來自待蝕刻層1表面 的反射光，且光阻圖案130例如呈條狀，此時光阻圖案13〇 即係用來定義待蝕刻層110 (導電層）成爲導線者。 請參照第2圖，接著進行一電漿化學氣相沈積步驟， 使用電漿140在基底上形成一層與光阻圖案130大致爲共 形的（conformal)高分子材料層150，亦即，此高分子材料 層150的輪廓與光阻圖案130相似，但其厚度可視情況調 整。此時由於高分子材料層15〇亦形成在光阻圖案13〇之 側壁，故光阻圖案13 0之間隙尺寸得以縮減，亦即光阻圖 案之寬度得以增加。例如，光阻圖案130之間隙的尺寸可 以由0.22微米縮減爲0.10微米。 上述電漿140所用之反應氣體中至少包含第〜部分氟^ 取代烴類，或可再加上另一全氟取代烴類，或是取代比例 較高之第二部分氟取代烴類，其中第一部分氟取代烴類係 爲導致高分子產生的最主要成分’而添加全氟取代烴類或 第二部分氟取代烴類之目的係爲使光阻圖案130上之高分 子材料層150的厚度大於抗反射層120上之高分子材料層 1 50的厚度。上述第一部分氟取代烴類例如是二氟甲院 (CH2F2)，全氟取代烴類例如是八氟丁烯（C4FX)，而第二部 --------------裝—— (請先閱讀背面之注音？事項|||^寫本頁) 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 7^84twf.doc/009 A7 7^84twf.doc/009 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明（$ ) 分氟取代烴類例如是三氟甲烷（CHFO。本較佳實施例係調 整二氟甲烷與八氟丁烯（或三氟甲烷）之比例，以及此電漿 化學氣相沈積步驟中之自我偏壓（self-bias)的大小，以使光 阻圖案U0上之高分子材料層的厚度a大於抗反射層 !2〇上之高分子材料層150的厚度b。 雖然本較佳實施例中形成在光阻圖案u〇上之汽分子 材料層1%的厚度較大，不過，如欲使各處之曹八 層ISO的厚度皆相同，則僅以第一部分氟 ^刀 、 氟甲烷)作爲反應氣體之主成分即可。 另外，此電漿化學氣相沈積步驟之壓力介於$ 至30 mTorr之間，功率介於500至1800 W之間，自m我偏 壓介於〇〜-400V之間，且沈積速率介於600人/如^至6〇〇7 A/mm之間。此外，當反應氣體之主成分僅有第—部分氣 取代烴類(如二氟甲烷)時，上述條件亦同樣趫用。口 再者，此PECVD步驟之反應氣體中尙可加入氨氣(Ar) 與一氧化碳（CO)，其中氬氣係作爲載氣，其埒增加光阻圖 案130上/抗反射層120上之高分子材料層15〇厚度的一 致性；而一氧化碳可捕捉氟取代烴類所產生的氣自由基 (fluorine radical)或氟離子（fluonde ion)，以防此其餓刻生 成之高分子，從而增加高分子材料層15〇的沈檳速率。 再者，此PECVD步驟之反應氣體中尙可加入氧氣（〇2) 與氮氣(N2)，其中氧氣具有飽刻高分子材料層】5〇之功用， 故可用來控制高分子材料層150之沈積速率，其功用恰與 一氧化碳相反。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----— — —— — 1— — - · I _ (請先閱讀背面之注意事項ΐϋ寫本頁) 訂· 線. 502300 7584twf. doc/009 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（b) 除此之外，此PEC VD步驟之反應氣體中還可加入全 氟取代烴類一六氟乙烷（C2F6)或四氟化碳（CF4)，其在電漿 中解離後可提供多量的氟原子或氟離子以蝕刻生成之高分 子，從而減緩高分子材料層15〇沈積的速率，其功用與上 述之氧氣類似。 請參照第3A〜3B圖，其所繪示爲後續之蝕刻製程中 高分子材料層150與光阻層130的變化，此蝕刻製程係使 用電漿160對待蝕刻層110進行非等向性蝕刻，以形成圖 案化之待蝕刻層ll〇a。請同時參照第2與3A圖，由於光 阻圖案130上之高分子材料層150的厚度a大於抗反射層 120上之高分子材料層150的厚度b，故當抗反射層！2〇 上之高分子材料層150被完全蝕去時，光阻圖案13〇上方 尙留有部分的高分子材料層150 (厚度a-b)，其可抵擋乾 蝕刻製程中的電漿，等於是增加了光阻層的抗蝕刻能力。 綜上所述，由於本發明較佳實施例之縮小光阻圖案之 間隙的方法係在圖案化之光阻層上形成共形之一高分子材 料層，藉以縮減光阻圖案之間隙，故能縮小其所定義之待 蝕刻層圖案的間隙。當此光阻層所定義之待蝕刻層爲導電 層時，以此方法即可形成較寬的導線，進而降低其阻値。 此外，由於本發明較佳實施例係在光阻圖案上形成較 厚的高分子材料層，故可在開始蝕刻下方待蝕刻層時抵擋 乾蝕刻製程中的電漿，即相當於增加光阻之抗蝕刻能力。 因此，本較佳實施例之方法可以應用於下一代解析度要求 更高的製程之中。 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公全丁-' ---- --------------裝 i — (請先閱讀背面之注意事項寫本頁) 訂，· •線- 502300 7584twf. doc/009 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（、） 除此之外，請參照第2圖，如果圖中兩個光阻圖案130 之間的空間係爲一個開口，則此開口之尺寸即得以縮小。 另外，如果圖中之光阻圖案130改成其他各種材質或功用 之罩幕層，且局分子材料層1 5 〇改成其他各種材質之材料 層，則兩個罩幕層圖案之間的間隙或開口尺寸當得因此材 料層而縮減，只要罩幕層與下方基底能夠耐受此材料層之 形成溫度即可。再者，如第2〜3A圖所示，如採用之材料 層的形成特性與高分子材料層150類似，即此材料層之製 程可加以控制’使其在罩幕層上之部分的厚度可大於其在 待蝕刻層上之部分的厚度，則在待蝕刻層上之材料層完全 鈾去後，罩幕層上方剩餘之材料層即可抵擋乾蝕刻製程中 的電漿，等於是增加了蝕刻罩幕層的抗蝕刻能力。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---------------- 請先閱讀背面之注意事項β寫本頁) 士a502300 7584twf. Doc / 009 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention ()) The following is a detailed description of a preferred embodiment and the accompanying drawings. A brief description of the formula: Figures 1 to 2 show the method for reducing the light_gap size of the preferred embodiment of the present invention; & _ Figures 3A to 3B are continuations of Figure 2, which are shown as follow-up Changes in the photoresist layer, the polymer material layer, and the layer to be etched during the etching process. % Symbol description of the drawings: 100: Substrate 110: Layer to be etched 110a: Patterned layer to be etched 120 · Anti-reflection Coating (ARC) 130: Photoresist Pattern 140 · Plasma 150: Polymer Layer 160: Plasma for etching a: Thickness of polymer material layer on photoresist pattern b: Thickness of tube molecular material layer on antireflection layer The description of the preferred embodiment The preferred embodiment of the present invention is described by the process of reducing the gap size of the photoresist pattern, and the photoresist layer is used as an etching mask layer. · However, those skilled in the art should understand that the present invention can also be used to reduce the size of the openings in the photoresist layer, or reduce the pattern gaps or opening sizes of the mask layer of various materials or functions. This paper size applies to China National Standard (CNS) A4 specifications (2) 0X 297 public love 2 Read the precautions on the back of this page)-Assembly line · 502300 7 584twf. Doc / 009 A7 B7 ^ _I ___ Ministry of Economic Affairs Intellectual Property Bureau employee consumer cooperative printed invention description (4) Please refer to Figure 1 ~ 2, which shows the method of reducing the photoresist pattern gap according to the preferred embodiment of the present invention. Please refer to Figure 1, first provide substrate 1 〇〇, a layer to be etched 110, an anti-reflection layer on the layer to be etched 110, and a photoresist pattern 130 as a mask layer have been formed thereon. The anti-reflection layer 120 is used to reduce the reflected light from the surface of the layer 1 to be etched, for example, a conductive layer. The photoresist pattern 130 is, for example, a stripe. It is used to define the layer to be etched 110 (conductive layer) as a conductor. Please refer to FIG. 2, and then perform a plasma chemical vapor deposition step. A plasma 140 is used to form a polymer polymer layer 150 that is substantially conformal to the photoresist pattern 130 on the substrate. The outline of the molecular material layer 150 is similar to the photoresist pattern 130, but its thickness can be adjusted according to circumstances. At this time, since the polymer material layer 150 is also formed on the sidewall of the photoresist pattern 130, the gap size of the photoresist pattern 130 is reduced, that is, the width of the photoresist pattern is increased. For example, the size of the gap of the photoresist pattern 130 can be reduced from 0.22 micrometers to 0.10 micrometers. The reaction gas used in the above plasma 140 contains at least a part of fluorine-substituted hydrocarbons, or may be added with another perfluoro-substituted hydrocarbon, or a second part of fluorine-substituted hydrocarbons with a higher proportion of substitution. Part of the fluorine-substituted hydrocarbons is the most important component that causes the generation of polymers. The purpose of adding perfluoro-substituted hydrocarbons or the second part of fluorine-substituted hydrocarbons is to make the thickness of the polymer material layer 150 on the photoresist pattern 130 greater than The thickness of the polymer material layer 150 on the anti-reflection layer 120. The first part of the fluorine-substituted hydrocarbons is, for example, difluoromethane (CH2F2), the perfluoro-substituted hydrocarbons is, for example, octafluorobutene (C4FX), and the second part is ------------- Installation—— (Please read the note on the back first? Matters ||| ^ Write this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 7 ^ 84twf.doc / 009 A7 7 ^ 84twf.doc / 009 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention ($) The fluorine-replacement hydrocarbons are, for example, trifluoromethane (CHFO. This preferred embodiment adjusts difluoromethane and octafluorobutane). The proportion of olefin (or trifluoromethane) and the size of self-bias in the plasma chemical vapor deposition step, so that the thickness a of the polymer material layer on the photoresist pattern U0 is larger than the anti-reflection The thickness b of the polymer material layer 150 on the layer 20. Although the vapor molecular material layer 1% formed on the photoresist pattern u0 in this preferred embodiment has a thickness of 1%, The thickness of the Cao Ba layer ISO is the same, so only the first part of the fluorine gas (knife, fluoromethane) can be used as the main component of the reaction gas. In addition, the pressure of this plasma chemical vapor deposition step is between $ and 30 mTorr, the power is between 500 and 1800 W, the bias voltage is between 0 ~ -400V, and the deposition rate is between 600 people / such as ^ to 007 A / mm. In addition, when the main component of the reaction gas is only the first part of the gas instead of hydrocarbons (such as difluoromethane), the above conditions are also applicable. Furthermore, ammonia gas (Ar) and carbon monoxide (CO) can be added to the reaction gas of this PECVD step. Among them, argon gas is used as a carrier gas, and it increases the polymer on the photoresist pattern 130 / the anti-reflection layer 120. The thickness of the material layer is consistent at 15 °; and carbon monoxide can capture fluorine radicals or fluon ions generated by fluorine instead of hydrocarbons, to prevent the polymers generated by the formation of carbon monoxide, thereby increasing the polymer The material layer has a sinking rate of 15 °. Furthermore, oxygen (〇2) and nitrogen (N2) can be added to the reaction gas in this PECVD step, wherein oxygen has the function of saturating the polymer material layer] 50, so it can be used to control the deposition of the polymer material layer 150. Velocity, its function is exactly the opposite of carbon monoxide. This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) -----— — — — 1 — —-· I _ (Please read the precautions on the back first and write this page) Order · Line. 502300 7584twf. Doc / 009 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (b) In addition, the reaction gas of this PEC VD step can also be added with perfluorinated hydrocarbons. Hexafluoroethane (C2F6) or carbon tetrafluoride (CF4), which can provide a large number of fluorine atoms or fluoride ions to dissolve the polymer generated after dissociation in the plasma, thereby slowing the deposition rate of the polymer material layer 15 Its function is similar to the above-mentioned oxygen. Please refer to FIGS. 3A to 3B, which show the changes of the polymer material layer 150 and the photoresist layer 130 in the subsequent etching process. This etching process uses plasma 160 to perform anisotropic etching on the to-be-etched layer 110 to A patterned to-be-etched layer 110a is formed. Please refer to FIGS. 2 and 3A at the same time. Since the thickness a of the polymer material layer 150 on the photoresist pattern 130 is greater than the thickness b of the polymer material layer 150 on the anti-reflection layer 120, it is an anti-reflection layer! When the polymer material layer 150 on 20 is completely etched, a part of the polymer material layer 150 (thickness ab) remains above the photoresist pattern 13o, which can resist the plasma in the dry etching process, which is equivalent to an increase The photoresist layer's resistance to etching. In summary, since the method for reducing the gap of the photoresist pattern in the preferred embodiment of the present invention is to form a conformal polymer material layer on the patterned photoresist layer, thereby reducing the gap of the photoresist pattern, it can Reduce the gap of the pattern of the layer to be etched as defined by the pattern. When the layer to be etched defined by this photoresist layer is a conductive layer, a wider wire can be formed by this method, thereby reducing its resistance. In addition, since the preferred embodiment of the present invention forms a thick polymer material layer on the photoresist pattern, it can resist the plasma in the dry etching process when starting to etch the layer to be etched below, which is equivalent to increasing the photoresistance. Resistance to etching. Therefore, the method of the preferred embodiment can be applied to a next-generation process with higher resolution requirements. 8 This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 male Ding-'---- -------------- install i — (Please read the note on the back first) Matters written on this page) Order, · • Line-502300 7584twf. Doc / 009 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (,) In addition, please refer to Figure 2 if the figure The space between the two photoresist patterns 130 is an opening, and the size of this opening can be reduced. In addition, if the photoresist pattern 130 in the figure is changed to a cover layer of various materials or functions, and the local molecular material If the layer 15 is changed to a material layer of other materials, the gap or opening size between the two mask layer patterns should be reduced by this material layer, as long as the mask layer and the underlying substrate can withstand the formation of this material layer The temperature is sufficient. Furthermore, as shown in Figures 2 to 3A, if the formation characteristics of the material layer used are similar to that of the polymer material layer 150, the process of this material layer can be controlled to make it on the cover layer The thickness of the portion may be greater than the thickness of the portion on the layer to be etched. After the material layer on the layer is completely removed, the remaining material layer above the mask layer can resist the plasma in the dry etching process, which is equivalent to increasing the etching resistance of the mask layer. Although the present invention has a better The embodiment is disclosed as above, but it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. The scope of the patent application shall be defined. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ---------------- Please read the back (Caution β writes this page)