CN1324683C - Method for defining minimum pitch to surpass optical photomicrography resolution in integrated circuit - Google Patents
Method for defining minimum pitch to surpass optical photomicrography resolution in integrated circuit Download PDFInfo
- Publication number
- CN1324683C CN1324683C CNB2004100624016A CN200410062401A CN1324683C CN 1324683 C CN1324683 C CN 1324683C CN B2004100624016 A CNB2004100624016 A CN B2004100624016A CN 200410062401 A CN200410062401 A CN 200410062401A CN 1324683 C CN1324683 C CN 1324683C
- Authority
- CN
- China
- Prior art keywords
- resolution
- pitch
- surmounts
- formation
- optical photomicrography
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Drying Of Semiconductors (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The present invention relates to a method for defining minimum pitch to surpass optical photomicrography process resolution in integrated circuits. Polymer side linings, non-photosensitive polymer stuffing and polymer shield are utilized to control the defined pitch in a target layer for making the minimum pitch of the target layer surpass the resolution of the optical photomicrography process. When used for manufacturing memories, the method can simultaneously solve the process problem of too great difference between the polysilicon pitch of a memory array area and peripheral line areas.
Description
Technical field
The invention relates to a kind of manufacture method of integrated circuit, particularly about a kind of method that defines minimum pitch to surpass optical photomicrography resolution in the integrated circuit.
Background technology
In general, the development of IC industry depends on updating of optical photomicrography resolution in the integrated circuit manufacture process, and along with the progress of optical photomicrography resolution, integrated circuit is constantly reached the target of high density, small size, therefore, critical dimension (Critical Dimension in the integrated circuit; CD), comprise minimum feature (minimum line width) and spacing, also more and more trickle, that is need higher resolution.Yet the resolution of optical photomicrography resolution is subjected to employed optical source wavelength restriction basically, therefore, has existed many methods to want to overcome this kind restriction in the prior art.
The United States Patent (USP) the 5th of awarding to JohnN.Randall, 618, in No. 383, proposition utilizes low temperature process to form the method for narrow transversary to overcome this kind restriction, this method is to go up deposition unhardened photoresistance (uncured photoresist layer) and define pattern (pattern) at supporting layer (supportinglayer), utilize sidewall (sidewall) and the surface of low temperature anisotropic (anisotropic) processing procedure deposition conformal layer (conformal layer) then at this unhardened photoresistance, this conformal layer material require has higher etching selectivity (etching selectivity) to this unhardened photoresistance, utilize low temperature anisotropic etching method to remove the conformal layer on this unhardened photoresistance surface, the conformal layer that keeps this unhardened photoresistance vertical sidewall, then optionally remove this unhardened photoresistance and keep each independently conformal layer, the photoresistance rotary coating at this independently on the conformal layer, and is eat-back (etch back) to this conformal layer.Afterwards, remove this conformal layer with the selective etch method, to form the open region (openings) identical with this conformal layer width, depositing conducting layer removes unnecessary conductive layer and photoresistance to form narrow transversary to this open region again.But the structure that this method forms has the relatively poor shortcoming of tack (adhesive).
The United States Patent (USP) the 5th of awarding to TylerA.Lowrey, 328, in No. 810, propose usage factor 2N mode and dwindle the method for little film festival distance, this method is to utilize the tradition exposure and be developed in rigid breaker (hardbuffer layer) to go up to be formed on the pattern of the minimum feature F that optical photomicrography resolution can form, reduce this rigid breaker live width with direct or indirect method, make this rigid breaker live width taper to F/2 by F, then deposit and rigid breaker, primer is compared second rigid breaker with higher selection etching ratio, remove this second rigid breaker on this first rigid breaker surface with anisotropic etching, stay this second rigid breaker on the sidewall of this first rigid breaker.Sidewall second rigid breaker that utilization stays is as etching mask (mask), and this moment, the sidewall second rigid breaker width was F/4, can be 1/2 of original mask pattern pitch with pitch reduction so.
Repeat above step, can reduce the 2-N of this minimum pitch to minimum micro-photographing process pitch.In other words, its be conformal (conformal) deposition of utilize repeating with the anisotropic etching longitudinal layer to reduce pitch.But the shortcoming of this method is that rigid breaker is difficult for deposition.Therefore, a kind of method of improvement surmounts the pitch of optical photomicrography resolution resolution with formation, is to be the institute Ji.
Summary of the invention
The objective of the invention is in the method that provides a kind of formation to surmount the pitch of optical photomicrography resolution resolution, be subjected to the difficult problem of employed optical source wavelength restriction with the resolution that solves optical photomicrography resolution.
In according to one embodiment of the invention, the method that a kind of formation surmounts the pitch of optical photomicrography resolution resolution is included in last depositing insulating layer of the substrate (substrate) that defines storage array district (memory array area) and perimeter circuit district (periphery area) and polysilicon, forming the photoresistance pattern on this polysilicon makes this storage array district and this perimeter circuit district have the pitch of different sizes, form polymer limit lining (polymer spacer) in this photoresistance pattern sidewalls, with this photoresistance pattern and this polymer limit lining is that this polysilicon of mask etching is to form irrigation canals and ditches (trench), in these irrigation canals and ditches, insert non-photopolymer (photo-insensitive polymer), remove the photoresistance pattern in this storage array district, form polymer mask and etching and be somebody's turn to do this polysilicon of storing in the array district, remove all polymer, so, final polysilicon pitch has just surmounted the resolution of optical photomicrography resolution.
In according to another embodiment of the present invention, the method that a kind of formation surmounts the pitch of optical photomicrography resolution resolution is included in depositing insulating layer in the substrate that defines storage array district and perimeter circuit district, polysilicon and resilient coating, forming the photoresistance pattern on this resilient coating makes this storage array district and this perimeter circuit district have the pitch of different sizes, form polymer limit lining in this photoresistance pattern sidewalls, with this photoresistance pattern and this polymer limit lining is that this resilient coating of mask etching and polysilicon are to form irrigation canals and ditches, in these irrigation canals and ditches, insert non-photopolymer and be etched back to this resilient coating, remove this resilient coating, in this storage array district, form polymer mask and this polysilicon of etching, remove all polymer, so, final polysilicon pitch has just surmounted the resolution of optical photomicrography resolution.
In addition, in the method for the invention, can amplify the minimum polysilicon pitch in storage array district on the light shield and dwindle the initial minimum polysilicon pitch of light shield upper periphery line areas, so can solve the excessive problem of polysilicon distance difference of storing array district and perimeter circuit district in the prior art simultaneously.
Description of drawings
Figure 1A-1I is the schematic diagram according to the first embodiment of the present invention; And
Fig. 2 A-2I is a schematic diagram according to a second embodiment of the present invention.
Symbol description:
10 substrates
10a storage array district
10b perimeter circuit district
12 oxides
14 polysilicons
16 anti-reflecting layers
18 photoresistance patterns
20 polymer limits lining
22,24 irrigation canals and ditches
26 non-photopolymers
28 photoresistances
30 polymer masks
32 polymer masks
34,36,38 gaps
50 substrates
50a storage array district
50b perimeter circuit district
52 oxides
54 polysilicons
56 resilient coatings
58 anti-reflecting layers
60 photoresistance patterns
62 polymer limits lining
64,66 irrigation canals and ditches
68 non-photopolymers
70 photoresistances
72 polymer
74 polymer masks
76,78,80 gaps
Embodiment
First embodiment
Figure 1A-1I is according to first embodiment of the present invention processing procedure, shown in Figure 1A, deposition oxide (oxide) 12 and polysilicon 14 in the substrate 10 that defines storage array district 10a and perimeter circuit district 10b, this polysilicon 14 is the destination layers that will form the pitch that surmounts optical photomicrography resolution resolution in ensuing processing procedure.On polysilicon 14, be coated with anti-reflecting layer (Anti-Reflection Coating; ARC) 16 and photoresistance 18, and to photoresistance 18 exposure and develop to define photoresistance pattern 18, the minimum pitch of this photoresistance pattern 18 in storage array district 10a is A, minimum pitch in perimeter circuit district 10b is B, wherein, this pitch be defined as live width and gap (line space) and, the preferably, this live width and this gap are all A/2 in storage array district 10a, shown in Figure 1B.
Sidewall at photoresistance pattern 18 forms polymer limit lining 20, shown in Fig. 1 C, 20 sidewalls that are deposited on photoresistance pattern 18 of this polymer, when if this polymer 20 is deposited on the surface, top of photoresistance pattern 18, then utilize etch-back to be removed, the preferably, polymer limit lining 20 clearance C each other in storage array district 10a is A/4, simultaneously, the lining of the polymer limit in perimeter circuit district 10b 20 gap each other then is D.Next, utilize photoresistance pattern 18 and polymer limit to serve as a contrast 20 as mask etching polysilicon 14 and anti-reflecting layer 16, district 10a forms the irrigation canals and ditches 22 with width C in the storage array, wherein, C=A/4 forms the irrigation canals and ditches 24 with width D at perimeter circuit district 10b, shown in Fig. 1 D.Then, in irrigation canals and ditches 22 and 24, insert non-photopolymer 26 and to its etch-back, shown in Fig. 1 E.Then be coated with another layer photoresistance 28, and storage array district 10a is exposed and developing manufacture process, only stay photoresistance 28 on perimeter circuit district 10b, shown in Fig. 1 F.
Deposited polymer mask 30 and 32 on perimeter circuit district 10b and storage array district 10a respectively then, the method that deposits this polymer mask 30 and 32 can be chemical vapour deposition technique (Chemical VaporDeposition; CVD) or other method, the polymer mask 32 on storage array district 10a has gap E, the preferably, and E=C=A/4 is shown in Fig. 1 G.Be that anti-reflecting layer 16 and the polysilicon 14 on the array district 10a stored in the shade etching with polymer mask 32 then, forming width is the irrigation canals and ditches 34 of E, shown in Fig. 1 H.Remove polymer mask 30 and 32, photoresistance 28 and 18, polymer limit lining 20 and non-photopolymer 26 at last, shown in Fig. 1 I, in storage array district 10a, gap 34 and 36 width are respectively E and C and E=C=A/4, final pitch F=A/2, that is this final pitch F is reduced among Figure 1B initial photoresistance pattern 18 pitch A half, and in perimeter circuit district 10b among final pitch G and Figure 1B at first the pitch B of photoresistance pattern 18 equate.
Second embodiment
Fig. 2 A-2I illustrates processing procedure according to a second embodiment of the present invention, deposition oxide 52 and polysilicon 54 in the substrate 50 that defines storage array district 50a and perimeter circuit district 50b, the polysilicon 54 on storage array district 50a is the destination layers that will surmount the pitch of optical photomicrography resolution resolution.Deposition has the resilient coating 56 of higher etching selectivity to polysilicon 54 and polymer 56, for example oxide or silicon nitride (silicon nitride), then on resilient coating 56, be coated with anti-reflecting layer 58 and photoresistance 60, photoresistance 60 defines photoresistance pattern 60 behind overexposure and developing manufacture process, the pitch of this photoresistance pattern 60 in storage array district 50a is A, and the pitch in perimeter circuit district 50b is B, the preferably, live width and gap among this pitch A are all A/2, shown in Fig. 2 B.
Sidewall at photoresistance pattern 60 forms polymer limit lining 62, shown in Fig. 2 C, the preferably, the width of this polymer limit lining 62 is A/8, make that polymer limit lining 62 clearance C each other in storage array district 50a is A/4, simultaneously, the lining of the polymer limit in perimeter circuit district 50b 62 gap each other then is D.Then serve as a contrast 62 as mask etching anti-reflecting layer 58, resilient coating 56 and polysilicon 54 with photoresistance pattern 60 and polymer limit, district 50a forms the irrigation canals and ditches 64 with width C in the storage array, wherein, and C=A/4, form irrigation canals and ditches 66 at perimeter circuit district 10b, shown in Fig. 2 D with width D.Then optionally remove polymer limit lining 62 and insert non-photopolymer 68 in irrigation canals and ditches 64 and 66, be etched back to the surface of resilient coating 56 then, eat-backing in the processing procedure at this can this resilient coating 56 of over etching, shown in Fig. 2 E.Then expose and developing manufacture process, only stay photoresistance 70 on perimeter circuit district 50b, shown in Fig. 2 F with resilient coating 56 removal back coating photoresistances 70 and to storage array district 50a.
Deposited polymer mask 72 and 74 on perimeter circuit district 50b and storage array district 50a respectively again, the method that deposits this polymer mask 72 and 74 can be chemical vapour deposition technique or other method, polymer shade 74 on storage array district 50a has gap E, the preferably, E=C=A/4 is shown in Fig. 2 G.Be that mask etching is stored the polysilicon 54 on the array district 50a with polymer mask 74 then, forming width is the irrigation canals and ditches 76 of E, shown in Fig. 2 H.Remove polymer shade 72 and 74, photoresistance 70 and non-photopolymer 68 at last, shown in Fig. 2 I, in storage array district 50a, gap 76 and 78 big or small E=C=A/4, final pitch F=A/2, that is this final pitch F is reduced among Fig. 2 B initial this photoresistance pattern 60 pitch A half, on the other hand, in perimeter circuit district 50b among final pitch G and Fig. 2 B at first the pitch B of this photoresistance pattern 60 equate.
Aforementioned anti-reflecting layer 16 and 58 can or be coated with the back spin coating before the photoresistance coating.
If organic material is then used in the spin coating before the photoresistance coating of this anti-reflecting layer, advantage is for can remove this anti-reflecting layer simultaneously when removing photoresistance.In addition, the purpose of polymer limit lining 20 and 62 is in the clearance C that reduces photoresistance pattern 18 and 60.
Can obtain in storage array district final polysilicon pitch F according to embodiments of the invention is half of initial photoresistance pattern pitch A.In aforementioned two embodiment, as initial pitch A during less than the resolution dimensions of two times optical photomicrography resolution, then final pitch F=A/2 will be less than the resolution size of optical photomicrography resolution.In addition, the present invention's initial polysilicon pitch in storage array district is two times of prior art, can make the difference of the polysilicon pitch in storage array district and perimeter circuit district be reduced to minimum, therefore, the invention provides a kind of method to solve the excessive problem of polysilicon pitch difference of storing array district and perimeter circuit district in the prior art.
More than the narration done for preferred embodiment of the present invention be the purpose of illustrating, accurately be disclosed form and be not intended to limit the present invention, based on above instruction or to make an amendment or change from embodiments of the invention study be possible, embodiment explains orally principle of the present invention and allows to have the knack of this operator and utilize the present invention in practical application and select and narration with various embodiment, and technological thought attempt of the present invention is decided by claim scope and equalization thereof.
Claims (63)
1, a kind of formation surmounts the method for the pitch of optical photomicrography resolution resolution, comprises the following steps:
Formation one wants to define the destination layer of this pitch;
Formation has the patterned layer of a pitch on this destination layer;
For this patterned layer forms first limit lining;
This destination layer of etching forms first irrigation canals and ditches;
In these first irrigation canals and ditches, insert non-photopolymer;
Remove this patterned layer;
For this first limit lining forms second limit lining;
This destination layer of etching forms second irrigation canals and ditches; And
Remove this non-photopolymer, first and second limit lining.
2, formation according to claim 1 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein the step of this formation destination layer comprises the following steps:
Form oxide in a substrate; And
Deposit spathic silicon is as this destination layer on this oxide.
3, formation according to claim 2 surmounts the method for the pitch of optical photomicrography resolution resolution, comprises that more process deposition of antiglare layer is on this polysilicon.
4, formation according to claim 3 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this anti-reflecting layer comprises organic material.
5, formation according to claim 1 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein the step of this formation patterned layer comprises the following steps:
Be coated with a photoresistance on this destination layer; And
To this photoresistance exposure and develop to form this patterned layer.
6, formation according to claim 5 surmounts the method for the pitch of optical photomicrography resolution resolution, comprises that more process deposition of antiglare layer is on this photoresistance.
7, formation according to claim 6 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this anti-reflecting layer comprises organic material.
8, formation according to claim 1 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this pitch reaches or convergence forms the minimum resolution of the optical photomicrography resolution of this patterned layer.
9, formation according to claim 1 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein the step of this formation first limit lining comprises the following steps:
Deposit a polymer on the top and sidewall of this patterned layer; And
Eat-backing this polymer to the part that only stays on this patterned layer sidewall serves as a contrast to form this first limit.
10, formation according to claim 1 surmounts the method for the pitch of optical photomicrography resolution resolution, wherein these first irrigation canals and ditches have a width for this pitch 1/4th.
11, formation according to claim 1 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this first limit lining has a width and is 1/8th of this pitch.
12, formation according to claim 1 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this step that etches first irrigation canals and ditches comprises that with this patterned layer and this first limit lining be this destination layer of electric paste etching of mask.
13, formation according to claim 1 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this step of inserting non-photopolymer comprises the following steps:
Form a polymer and insert this first irrigation canals and ditches; And
Eat-back this polymer to the part that only stays in these first irrigation canals and ditches.
14, formation according to claim 13 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this polymer comprises non-photosensitive material.
15, formation according to claim 1 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein the step of this formation second limit lining comprises the top of formation one polymer in this first limit lining and this filling, and on the sidewall of this first limit lining.
16, formation according to claim 15 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this polymer is as the mask that etches these second irrigation canals and ditches.
17, formation according to claim 1 surmounts the method for the pitch of optical photomicrography resolution resolution, wherein these second irrigation canals and ditches have a width for this pitch 1/4th.
18, formation according to claim 1 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this second limit lining has a width and is 1/8th of this pitch.
19, a kind of formation surmounts the method for the pitch of optical photomicrography resolution resolution, comprises the following steps:
Formation one wants to define the destination layer of this pitch;
Form a resilient coating on this destination layer;
Formation has the patterned layer of a pitch on this resilient coating;
For this patterned layer forms first limit lining;
This resilient coating of etching and destination layer form first irrigation canals and ditches;
In these first irrigation canals and ditches, insert non-photopolymer;
Remove all material on this destination layer;
For this non-photopolymer forms second limit lining;
This destination layer of etching forms second irrigation canals and ditches; And
Remove this non-photopolymer and second limit lining.
20, formation according to claim 19 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein the step of this formation destination layer comprises the following steps:
Form oxide in a substrate; And
Deposit spathic silicon is as this destination layer on this oxide.
21, formation according to claim 19 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this resilient coating has higher etching selectivity to this destination layer.
22, formation according to claim 19 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this resilient coating comprises oxide or silicon nitride.
23, formation according to claim 19 surmounts the method for the pitch of optical photomicrography resolution resolution, comprises that more process deposition of antiglare layer is on this resilient coating.
24, formation according to claim 23 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this anti-reflecting layer comprises organic material.
25, formation according to claim 19 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein the step of this formation patterned layer comprises the following steps:
Be coated with a photoresistance on this resilient coating; And
To this photoresistance exposure and develop to form this patterned layer.
26, formation according to claim 25 surmounts the method for the pitch of optical photomicrography resolution resolution, comprises that more process deposition of antiglare layer is on this photoresistance.
27, formation according to claim 26 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this anti-reflecting layer comprises organic material.
28, formation according to claim 19 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this pitch reaches or convergence forms the minimum resolution of the optical photomicrography resolution of this patterned layer.
29, formation according to claim 19 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein the step of this formation first limit lining comprises the following steps:
Deposit a polymer on the top and sidewall of this patterned layer; And
Eat-backing this polymer to the part that only stays on this patterned layer sidewall serves as a contrast to form this first limit.
30, formation according to claim 19 surmounts the method for the pitch of optical photomicrography resolution resolution, wherein these first irrigation canals and ditches have a width for this pitch 1/4th.
31, formation according to claim 19 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this first limit lining has a width and is 1/8th of this pitch.
32, formation according to claim 19 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this step that etches first irrigation canals and ditches comprises that with this patterned layer and this first limit lining be this resilient coating of electric paste etching and this destination layer of mask.
33, formation according to claim 19 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this step of inserting non-photopolymer comprises that forming a polymer inserts this first irrigation canals and ditches.
34, formation according to claim 33 surmounts the method for the pitch of optical photomicrography resolution resolution, more is included in this formation polymer and removes this first limit lining in the past.
35, formation according to claim 33 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this polymer comprises non-photosensitive material.
36, formation according to claim 19 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this step that removes all material on this destination layer comprises the following steps:
Be etched back to the remaining thickness of this resilient coating; And
Remove this resilient coating.
37, formation according to claim 19 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein the step of this formation second limit lining comprises that formation one polymer is on the top and sidewall of this filling.
38, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 37, and wherein this polymer is as the mask that etches these second irrigation canals and ditches.
39, formation according to claim 19 surmounts the method for the pitch of optical photomicrography resolution resolution, wherein these second irrigation canals and ditches have a width for this pitch 1/4th.
40, formation according to claim 19 surmounts the method for the pitch of optical photomicrography resolution resolution, and wherein this second limit lining has a width and is 1/8th of this pitch.
41, a kind of formation surmounts the method for the pitch of optical photomicrography resolution resolution, comprises the following steps:
First and second zone of definition in a substrate;
Form an insulating barrier in this substrate;
Deposit a conductive layer on this insulating barrier;
Be coated with first photoresistance on this conductor layer;
Exposure and this first photoresistance that develops are to form a pattern in wherein, and this pattern has the first segment distance and second pitch in this first area respectively with this second area, and this second pitch is greater than this first segment distance;
Forming a polymer limit is lining on the sidewall of this first photoresistance;
With this first photoresistance and this polymer limit lining is this conductive layer of mask etching, forms first and second irrigation canals and ditches in this first and second zone respectively;
Forming non-photopolymer inserts in these first and second irrigation canals and ditches;
Be coated with second photoresistance at this second area, and remove this first photoresistance of this first area;
Form on the sidewall that polymer mask serves as a contrast on above this non-photopolymer of this first area and this polymer limit lining and this polymer limit;
With this polymer limit lining is that this conductive layer of mask etching forms the 3rd irrigation canals and ditches; And
Remove this polymer mask, this second photoresistance, this polymer limit lining and this non-photopolymer.
42, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 41, and wherein this first and second zone comprises storage array district and perimeter circuit district respectively.
43, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 41, and wherein the step of this depositing conducting layer comprises deposit spathic silicon.
44, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 41, more is included in this and is coated with process deposition of antiglare layer before first photoresistance.
45, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 44, and wherein this anti-reflecting layer comprises organic material.
46, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 41, more be included in this exposure and this first photoresistance that develops before process deposition of antiglare layer.
47, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 46, and wherein this anti-reflecting layer comprises organic material.
48, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 41, and wherein this first segment is apart from reaching or convergence forms the minimum resolution of the optical photomicrography resolution of this pattern.
49, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 41, and wherein these first irrigation canals and ditches have a width and are 1/4th of this first segment distance.
50, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 41, and wherein the non-photopolymer of this formation step of inserting these first and second irrigation canals and ditches comprises and eat-backs the upper surface of this non-photopolymer to this first photoresistance.
51, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 41, and wherein the 3rd irrigation canals and ditches have a width and are 1/4th of this first segment distance.
52, a kind of formation surmounts the method for the pitch of optical photomicrography resolution resolution, comprises the following steps:
First and second zone of definition in a substrate;
Form an insulating barrier in this substrate;
Deposit a conductive layer on this insulating barrier;
Form a resilient coating on this conductor layer;
Be coated with first photoresistance on this resilient coating;
Exposure and this first photoresistance that develops are to form a pattern in wherein, and this pattern has the first segment distance and second pitch in this first area respectively with this second area, and this second pitch is greater than this first segment distance;
Forming a polymer limit is lining on the sidewall of this first photoresistance;
With this first photoresistance and polymer limit lining is this resilient coating of mask etching and conductive layer, forms first and second irrigation canals and ditches in this first and second zone respectively;
Forming non-photopolymer inserts in these first and second irrigation canals and ditches;
Be etched back to the remaining thickness of this resilient coating;
Remove this resilient coating;
Form a polymer mask above this non-photopolymer of this first area and on the side ancient piece of jade, round, flat and with a hole in its centre;
With this polymer limit lining is that this conductor layer of mask etching forms the 3rd irrigation canals and ditches; And
Remove this polymer mask and non-photopolymer.
53, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 52, and wherein this first and second zone comprises storage array district and perimeter circuit district respectively.
54, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 52, and wherein the step of this depositing conducting layer comprises deposit spathic silicon.
55, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 52, more is included in this and is coated with process deposition of antiglare layer before first photoresistance.
56, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 55, and wherein this anti-reflecting layer comprises organic material.
57, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 52, more be included in this exposure and this first photoresistance that develops before process deposition of antiglare layer.
58, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 57, and wherein this anti-reflecting layer comprises organic material.
59, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 52, and wherein this first segment is apart from reaching or convergence forms the minimum resolution of the optical photomicrography resolution of this pattern.
60, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 52, and wherein these first irrigation canals and ditches have a width and are 1/4th of this first segment distance.
61, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 52, more is included in this and forms non-photopolymer and insert the step of these first and second irrigation canals and ditches and removed this polymer limit lining in the past.
62, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 52, and the step that more is included in this formation polymer mask formed a protective layer in the past and covers this second area.
63, described formation surmounts the method for the pitch of optical photomicrography resolution resolution according to claim 52, and wherein the 3rd irrigation canals and ditches have a width and are 1/4th of this first segment distance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100624016A CN1324683C (en) | 2004-07-02 | 2004-07-02 | Method for defining minimum pitch to surpass optical photomicrography resolution in integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100624016A CN1324683C (en) | 2004-07-02 | 2004-07-02 | Method for defining minimum pitch to surpass optical photomicrography resolution in integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1716567A CN1716567A (en) | 2006-01-04 |
| CN1324683C true CN1324683C (en) | 2007-07-04 |
Family
ID=35822218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100624016A Expired - Fee Related CN1324683C (en) | 2004-07-02 | 2004-07-02 | Method for defining minimum pitch to surpass optical photomicrography resolution in integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1324683C (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5618383A (en) * | 1994-03-30 | 1997-04-08 | Texas Instruments Incorporated | Narrow lateral dimensioned microelectronic structures and method of forming the same |
| US6548385B1 (en) * | 2002-06-12 | 2003-04-15 | Jiun-Ren Lai | Method for reducing pitch between conductive features, and structure formed using the method |
| JP2003158072A (en) * | 2001-09-28 | 2003-05-30 | Macronix Internatl Co Ltd | Method for reducing size between patterns of photoresist |
| CN1455298A (en) * | 2002-04-29 | 2003-11-12 | 旺宏电子股份有限公司 | Phase-shift mask manufacturing method |
| US6664180B1 (en) * | 2001-04-02 | 2003-12-16 | Advanced Micro Devices, Inc. | Method of forming smaller trench line width using a spacer hard mask |
-
2004
- 2004-07-02 CN CNB2004100624016A patent/CN1324683C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5618383A (en) * | 1994-03-30 | 1997-04-08 | Texas Instruments Incorporated | Narrow lateral dimensioned microelectronic structures and method of forming the same |
| US6664180B1 (en) * | 2001-04-02 | 2003-12-16 | Advanced Micro Devices, Inc. | Method of forming smaller trench line width using a spacer hard mask |
| JP2003158072A (en) * | 2001-09-28 | 2003-05-30 | Macronix Internatl Co Ltd | Method for reducing size between patterns of photoresist |
| CN1455298A (en) * | 2002-04-29 | 2003-11-12 | 旺宏电子股份有限公司 | Phase-shift mask manufacturing method |
| US6548385B1 (en) * | 2002-06-12 | 2003-04-15 | Jiun-Ren Lai | Method for reducing pitch between conductive features, and structure formed using the method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1716567A (en) | 2006-01-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8288083B2 (en) | Methods of forming patterned masks | |
| US7732343B2 (en) | Simplified pitch doubling process flow | |
| CN1862785A (en) | Verfahren zur herstellung eines halbleiterbauelements | |
| US8778807B2 (en) | Method of reducing delamination in the fabrication of small-pitch devices | |
| CN1831643A (en) | Method for forming dual damascene with improved etch profiles | |
| CN1453638A (en) | Method for producing sub-photoetching dimensional line and space pattern of pressing & printing nano-photoetching | |
| CN1992201A (en) | Method for forming semiconductor device having fin structure | |
| CN1149679C (en) | Semiconductor memory device and method of manufacturing the same | |
| US20090170310A1 (en) | Method of forming a metal line of a semiconductor device | |
| CN1324683C (en) | Method for defining minimum pitch to surpass optical photomicrography resolution in integrated circuit | |
| CN104347350A (en) | Method for semiconductor self-aligned patterning | |
| CN1716565A (en) | Method for forming device isolation film of semiconductor device | |
| CN1226077A (en) | Method for manufacturing semiconductor device | |
| CN1841673A (en) | Method for etching dielectric material in semiconductor component | |
| CN1649095A (en) | Method for forming a contact of a semiconductor device | |
| CN1208817C (en) | Method for making metal semiconductor transistor | |
| CN1315182C (en) | Method of fabricating a memory device having a self-aligned contact window and equipment formed thereby | |
| CN1941294A (en) | Opening and contact-window formation | |
| CN1231949C (en) | Method for forming grid structure and autoregistered contact hole structure | |
| CN1256753C (en) | Method of forming and testing phase shift mask | |
| CN1171303C (en) | Technology for making opening on bimetal inlaid structure | |
| CN1287422C (en) | Method for forming contact window with sphering corner and semiconductor structure | |
| CN1532893A (en) | Method for producing flash storage float grid | |
| CN1349250A (en) | Mosaic process to form grid | |
| CN1263149C (en) | Non-volatile memory and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070704 Termination date: 20190702 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |