CN1787175A - Method for reducing pattern line distance - Google Patents
Method for reducing pattern line distance Download PDFInfo
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- CN1787175A CN1787175A CN 200410097017 CN200410097017A CN1787175A CN 1787175 A CN1787175 A CN 1787175A CN 200410097017 CN200410097017 CN 200410097017 CN 200410097017 A CN200410097017 A CN 200410097017A CN 1787175 A CN1787175 A CN 1787175A
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Abstract
The invention relates to a method for reducing line interval of a pattern, firstly in order forming a material layer, a hard mask and a patternized photoresistiveLayer on a substrate; successively, taking the patternized photoresistive layer as an etching mask to etch the hard mask, and here, because of load effect, there will be partial hard mask remained in the etching region so as to form microchannels on the edge of the hard mask in the etching region; successively, taking the residual hard mask as an etching mask to patternize the material layer; removing the patternized photoresistive layer and the hard mask. The invention largely reduces the line interval of the pattern.
Description
Technical field
The present invention relates to a kind of manufacture of semiconductor, particularly relate to a kind of method of dwindling pattern lines apart from (pitch).
Background technology
Under the more and more higher situation of the requirement of productive setization, the design of whole semiconductor element size also is forced to advance toward the direction that size does not stop to dwindle.Change speech, in integrated circuit, the pattern lines distance, i.e. the downsizing of the summation of the live width of pattern and line-spacing is the smaller the better.At present, the processing procedure of integrated circuit at last pattern lines mostly be to utilize micro-photographing process to reach apart from downsizing with high-res.Yet, the micro-photographing process of high-res since the restriction of essential optics so technology comparatively difficulty and cost are also comparatively expensive.For the 248nm exposure manufacture process, even, still can't reach the live width that forms below the 100nm in conjunction with other technology that improves resolution.And, still can't reach the live width that forms below the 70nm for the 193nm exposure manufacture process.And,, the scope of its application will be limited because of the restriction of its light shield and photoresistance for the 193nm exposure manufacture process.Yet if can't dwindle the pattern lines distance, it is almost impossible increasing the packaging density of element and the integration of integrated circuit.And the expending of cost also must be considered into.
This shows that above-mentioned existing method of dwindling the pattern lines distance still has many defectives, and demands urgently further being improved.In order to solve existing defective of dwindling the method for pattern lines distance, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but does not see always that for a long time suitable design finished by development, and this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that above-mentioned existing method of dwindling the pattern lines distance exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, actively studied innovation, in the hope of founding a kind of new method of dwindling the pattern lines distance, can improve general existing method of dwindling the pattern lines distance, make it have more practicality.Through constantly research, design, and after studying repeatedly and improving, create the present invention who has practical value finally.
Summary of the invention
The objective of the invention is to, overcome the defective that existing method of dwindling the pattern lines distance exists, and a kind of new method of dwindling the pattern lines distance is provided, technical problem to be solved is to make it effectively dwindle the pattern lines distance of integrated circuit, thereby be suitable for practicality more, and have the value on the industry.
Another object of the present invention is to, a kind of method of dwindling the pattern lines distance is provided, technical problem to be solved is to make it significantly put forward component configuration density in the integrated circuit, thereby is suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of method of dwindling the pattern lines distance that the present invention proposes, it comprises: form a material layer in a substrate; On this material layer, form a curtain layer of hard hood; On this curtain layer of hard hood, form a patterning photoresist layer, expose a zone; As etch mask, this curtain layer of hard hood of etching is wherein because trench effect in etching area this curtain layer of hard hood partly can residually be arranged, and the edge of this curtain layer of hard hood forms a plurality of little irrigation canals and ditches in etching area with this patterning photoresist layer; With this residual curtain layer of hard hood as etch mask, this material layer of patterning; And remove this patterning photoresist layer and this curtain layer of hard hood.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid method of dwindling the pattern lines distance, the wherein said step that forms this curtain layer of hard hood on this material layer comprises: form a thin cover curtain layer on this material layer; And on this thin cover curtain layer, form a thick cover curtain layer.
Aforesaid method of dwindling the pattern lines distance, wherein said is etch mask with this patterning photoresist layer, the step of this curtain layer of hard hood of etching, comprise: with this patterning photoresist layer as etch mask, this thick cover curtain layer of etching, wherein because trench effect can residually have this thick cover curtain layer of part, and form these irrigation canals and ditches slightly in this thick cover curtain layer in etching area; And with this patterning photoresist layer and residual this thick cover curtain layer as etch mask, etching should thin cover curtain layer.
Aforesaid method of dwindling the pattern lines distance, the material of wherein said thick cover curtain layer to the etching selectivity of the material of this thin cover curtain layer greater than 1.
Aforesaid method of dwindling the pattern lines distance, the material of wherein said thin cover curtain layer to the etching selectivity of the material of this material layer greater than 10.
Aforesaid method of dwindling the pattern lines distance, wherein said thick cover curtain layer comprises a silicon nitride layer.
Aforesaid method of dwindling the pattern lines distance, wherein said thin cover curtain layer comprises one silica layer.
Aforesaid method of dwindling the pattern lines distance, wherein said material layer comprises a polysilicon layer.
Aforesaid method of dwindling the pattern lines distance, wherein said forming this slightly after the irrigation canals and ditches, more comprise and carry out first-class, to adjust this width of irrigation canals and ditches slightly to etching step.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.According to a kind of formation method of dwindling the patterning cover curtain of pattern lines distance that the present invention proposes, it comprises: form a cover curtain layer in a substrate; On this cover curtain layer, form a patterning photoresist layer; As etch mask, this cover curtain layer of etching is wherein because trench effect in etching area this cover curtain layer partly can residually be arranged, and the edge of this cover curtain layer forms a plurality of little irrigation canals and ditches in etching area with this patterning photoresist layer; And remove this patterning photoresist layer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid formation method of dwindling the patterning cover curtain of pattern lines distance, wherein said cover curtain layer comprises a silicon nitride layer.
Aforesaid formation method of dwindling the patterning cover curtain of pattern lines distance, wherein said cover curtain layer comprises one silica layer.
Aforesaid formation method of dwindling the patterning cover curtain of pattern lines distance, the step of this cover curtain layer of formation in the wherein said substrate comprises: form a thin cover curtain layer in this substrate; And on this thin cover curtain layer, form a thick cover curtain layer.
Aforesaid formation method of dwindling the patterning cover curtain of pattern lines distance, wherein said with this patterning photoresist layer as etch mask, the step of this cover curtain layer of etching, comprise: with this patterning photoresist layer as etch mask, this thick cover curtain layer of etching, wherein because trench effect can residually have this thick cover curtain layer of part, and form these irrigation canals and ditches slightly in this thick cover curtain layer in etching area; And with this patterning photoresist layer and residual this thick cover curtain layer as etch mask, etching should thin cover curtain layer.
Aforesaid formation method of dwindling the patterning cover curtain of pattern lines distance, the material of wherein said thick cover curtain layer to the etching selectivity of the material of this thin cover curtain layer greater than 1.
Aforesaid formation method of dwindling the patterning cover curtain of pattern lines distance, wherein said thick cover curtain layer comprises a silicon nitride layer.
Aforesaid formation method of dwindling the patterning cover curtain of pattern lines distance, wherein said thin cover curtain layer comprises one silica layer.
Aforesaid formation method of dwindling the patterning cover curtain of pattern lines distance, wherein said forming this slightly after the irrigation canals and ditches, more comprise and carry out first-class, to adjust this width of irrigation canals and ditches slightly to etching step.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.A kind of method of dwindling the pattern lines distance according to the present invention proposes comprises: form a material layer in a substrate; On this material layer, form a patterning cover curtain layer; With this patterning cover curtain layer is that an etch mask carries out an etch process, in this material layer, to form a plurality of little irrigation canals and ditches, wherein this slightly irrigation canals and ditches be to be formed in this material layer along the sidewall of this patterning cover curtain layer so that this material layer is patterned; And remove this patterning cover curtain layer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid method of dwindling the pattern lines distance, wherein said etch process comprise a reactive ion etching processing procedure.
Aforesaid method of dwindling the pattern lines distance, the polar biased power of wherein said reactive ion etching processing procedure (bias power) is lower than 150W, and source electrode power supply (source power) power is to be higher than 500W.
Aforesaid method of dwindling the pattern lines distance, it is wherein said that this cover curtain layer is an one silica layer if this material layer is a polysilicon layer, then the employed reacting gas of this reactive ion etching processing procedure comprises chlorine.The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to reach aforementioned goal of the invention, major technique of the present invention thes contents are as follows:
The present invention proposes a kind of method of dwindling the pattern lines distance, is included in and forms a material layer, a curtain layer of hard hood and a patterning photoresist layer in the substrate in regular turn.Then, as etch mask, the etching curtain layer of hard hood is at this moment because trench effect (trenching effect) with the patterning photoresist layer, therefore can residual in etching area the part curtain layer of hard hood be arranged, and the edge of curtain layer of hard hood forms little irrigation canals and ditches (micro-trench) in etching area.Subsequently, again with residual curtain layer of hard hood or with patterning photoresist layer and residual curtain layer of hard hood as etch mask, and with material layer patternization.Afterwards, again patterning photoresist layer and curtain layer of hard hood are removed.Because the present invention utilizes trench effect with when the etching curtain layer of hard hood, make that the edge of curtain layer of hard hood is formed with little irrigation canals and ditches in the etching area, therefore, follow-up again with little irrigation canals and ditches design transfer to material layer, and after material layer was patterned, the line-spacing of its pattern will significantly dwindle.
The present invention proposes a kind of formation method of dwindling the patterning cover curtain of pattern lines distance in addition, and its step is included in and forms a cover curtain layer in the substrate.Then, on cover curtain layer, form a patterning photoresist layer.Afterwards, with the patterning photoresist layer as etch mask, etch mask layer, and form the patterning cover curtain layer.This moment is because trench effect, therefore can be in etching area the cover curtain layer of residual fraction, and the edge of curtain layer of hard hood forms little irrigation canals and ditches in etching area.Then the patterning photoresist layer is removed.
The present invention proposes a kind of method of dwindling the pattern lines distance again, and the method is at first to form a material layer in a substrate, forms a patterning cover curtain layer then on material layer.Afterwards, with above-mentioned patterning cover curtain layer is that an etch mask carries out an etch process, it for example is a reactive ion etching processing procedure, in material layer, to form several little irrigation canals and ditches, wherein above-mentioned little irrigation canals and ditches are to be formed in the material layer along the cover curtain layer pattern sidewalls, so that material layer is patterned.At last, remove cover curtain layer.
By technique scheme, the present invention has following advantage at least:
The present invention is because utilize known in the trench effect of carrying out the desire elimination of patterning time institute, and make in the etched zone residual have the part etch layer, form little irrigation canals and ditches with edge at etching area, therefore follow-up again with this etch layer during as etch mask, can dwindle the pattern lines distance, thereby be suitable for practicality more.
The present invention utilizes special reactive ion etching processing procedure to come etched material layer, so that reactive ion is along the etching of cover curtain layer pattern sidewalls, and in material layer, form little irrigation canals and ditches, and then make material layer patternization, can dwindle the pattern lines distance, thereby be suitable for practicality more.
The present invention utilizes special reactive ion etching processing procedure, in material layer, to form little irrigation canals and ditches, and material layer is patterned, and the line-spacing of its characteristic pattern of material layer of patterning can dwindle about half than known techniques, therefore method of the present invention can effectively be dwindled the pattern lines distance, and then improves the integration of element.
In sum, the method of dwindling the pattern lines distance that the present invention is special, it has above-mentioned many advantages and practical value, and in class methods, do not see have similar design to publish or use and really genus innovation, no matter it is all having bigger improvement on method or on the function, have large improvement technically, and produced handy and practical effect, and more existing method of dwindling the pattern lines distance has the multinomial effect of enhancement, thereby be suitable for practicality more, and have the extensive value of industry, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Figure 1A to Fig. 1 E is the manufacturing process generalized section of dwindling pattern lines distance (pitch) according to a preferred embodiment of the present invention.
Fig. 2 A to Fig. 2 C is the manufacturing process generalized section of dwindling the pattern lines distance according to another preferred embodiment of the present invention.
100: substrate 102: material layer
102a: the material layer 104 of patterning: curtain layer of hard hood
105: thin cover curtain layer 107: thick cover curtain layer
108: patterning photoresist layer 109: the patterning cover curtain layer
110,112: little irrigation canals and ditches d
1, d
2: line-spacing
Embodiment
Below in conjunction with accompanying drawing and preferred embodiment, to its concrete grammar step of the method for dwindling the pattern lines distance, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
First embodiment
Seeing also shown in Figure 1A to Fig. 1 E, is the manufacturing process generalized section of dwindling pattern lines distance (pitch) according to a preferred embodiment of the present invention.See also Figure 1A, form layer of material layer 102, a curtain layer of hard hood (hard mask layer) 104 and one deck patterning photoresist layer 108 in regular turn in a substrate 100, wherein the material of material layer 102 for example is electric conducting material or insulating material.And forming the step of curtain layer of hard hood 104 on the material layer 102 such as be on material layer 102, to form a thin cover curtain layer 105 earlier, on thin cover curtain layer 105, form a thick cover curtain layer 107 again.And be patterned the zone that photoresist layer 108 exposed is to be defined as an exposed region 120.
At this, the etching selectivity of the material of 107 pairs of thin cover curtain layers 105 of thick cover curtain layer is greater than 1, and the etching selectivity of 102 pairs of thin cover curtain layers 105 of material layer for example is greater than 10.This is will carry out etching to thick cover curtain layer 107 earlier because of follow-up, utilizes thick cover curtain layer 107 to come patterning to approach cover curtain layer 105 as etch mask afterwards again, and therefore the etching selectivity of the material of 107 pairs of thin cover curtain layers 105 of thick cover curtain layer is to need greater than 1.In addition, if the etching selectivity of 102 pairs of thin cover curtain layers 105 of material layer is enough big, just thin cover curtain layer 105 can be done thinlyyer, so that follow-up etching accuracy lifting when patterned material layer.In a preferred embodiment, the material of thin cover curtain layer 105 for example is a silica, and the material of thick cover curtain layer 107 for example is a silicon nitride layer.
In prior art method, when desiring to carry out patterning cover curtain layer 104, normally can avoid trench effect to take place as far as possible.In addition, known pattern lines is apart from normally being decided by the opening in the photoresist layer 108, so pattern lines is apart from the restriction that will be subject to micro-photographing process, that is known pattern lines is apart from being d among Figure 1A
1Yet the present invention but contrary operation utilizes load effect to reach the present invention on the contrary, as following Figure 1B.
See also Figure 1B, with patterning photoresist layer 108 as etch mask, etching curtain layer of hard hood 104.At this moment, because trench effect therefore can residual in exposed region 120 part curtain layer of hard hood 104 be arranged, and the edge of curtain layer of hard hood forms little irrigation canals and ditches 110 in etching area.And when curtain layer of hard hood 104, shown in Figure 1A, when being formed, be the thick cover curtain layer 107 of first etching by thin cover curtain layer 105 and thick cover curtain layer 107, the thick cover curtain layer 107 of meeting this moment residual fraction in exposed region 120, and in etched thick cover curtain layer 107, form little irrigation canals and ditches 110.
Afterwards, see also Fig. 1 C, as etch mask, etching approaches cover curtain layer 105, also to form little irrigation canals and ditches 110 in thin cover curtain layer 105 with patterning photoresist layer 108 and residual thick cover curtain layer 107.
What is particularly worth mentioning is that the present invention can utilize the mode of adjusting etching parameter to adjust the width of little irrigation canals and ditches 110.Or after forming little irrigation canals and ditches 110, increase the width that one isotropic etching step adjusted little irrigation canals and ditches 110 again.
Then, see also Fig. 1 D, with residual curtain layer of hard hood 104 as etch mask, or with photoresist layer 108 and residual curtain layer of hard hood 104 as etch mask, with material layer 102 patternings.At this moment, because curtain layer of hard hood 104 has little irrigation canals and ditches 110,, and form the material layer 102a of patterning so material layer 102 equally also can be etched goes out little irrigation canals and ditches 110.
Then, see also Fig. 1 E, patterning photoresist layer 108 and curtain layer of hard hood 104 (asking for an interview Fig. 1 D) are removed, and the material layer 102a of patterning is come out.By this figure as can be known, the line-spacing of the material layer pattern of present embodiment is d
2, and with the formed pattern lines of known techniques apart from being d among Figure 1A
1, it is the restriction of micro-photographing process, and d
2In fact less than d
1And the line-spacing of pattern is d
2Almost be that pattern lines is apart from d
1Half (shown in Figure 1A), and the width of the spacing of patterning photoresist layer 108 line of material layer 102a and the size of two interspaces no better than.Therefore method of the present invention can effectively be dwindled the pattern lines distance really.
Therefore, characteristics of the present invention are the trench effect that are to utilize the desire elimination of known institute, and form little irrigation canals and ditches at etched edges of regions place, to reach the purpose of the line-spacing that dwindles pattern.
Second embodiment
Seeing also shown in Fig. 2 A to Fig. 2 C, is the method flow generalized section of dwindling line-spacing according to another preferred embodiment of the present invention.See also Fig. 2 A, form a material layer 102 in substrate 100, the material of material layer 102 can be insulating material or electric conducting material.Afterwards, form a patterning cover curtain layer 109 on material layer 102, wherein the material of patterning cover curtain layer 109 for example is a resistance material, or and material layer between have the material of etching selectivity.Particularly, the line-spacing d1 between the cover curtain layer pattern 108 is the limit for micro-photographing process.
See also Fig. 2 B, carry out an etch process with cover curtain layer 109 as an etch mask, to form several little irrigation canals and ditches 112 in material layer 102, wherein little irrigation canals and ditches 112 are to be formed in the material layer 102 along cover curtain layer pattern 109 sidewalls, so that material layer 102 is patterned.In a preferred embodiment, the etch process that forms little irrigation canals and ditches 112 in material layer 102 for example is a reactive ion etching processing procedure (RIE), and the pressure of reactive ion etching processing procedure is to be higher than 10mTorr, its polar biased power (bias power) is lower than 150W, and its source electrode power supply (source power) power is to be higher than 500W.And its etching reaction gas is to decide according to the material of material layer 102, for example if use the material of polysilicon as material layer 102, and uses the material of silica as cover curtain layer 109, and then the employed reacting gas of its reactive ion etching processing procedure comprises chlorine.
See also Fig. 2 C, remove cover curtain layer 109, expose the material layer 102a with characteristic pattern, wherein the line-spacing of the characteristic pattern 102a of material layer is d2, and this line-spacing d2 has dwindled about half approximately compared to the line-spacing of previous micro-photographing process restriction.
The present invention utilizes special reactive ion etching processing procedure, in material layer, to form little irrigation canals and ditches, and material layer is patterned, and the line-spacing of its characteristic pattern of material layer of patterning can dwindle about half than known techniques, therefore method of the present invention can effectively be dwindled the pattern lines distance, and then improves the integration of element.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (22)
1, a kind of method of dwindling the pattern lines distance is characterized in that it comprises:
In a substrate, form a material layer;
On this material layer, form a curtain layer of hard hood;
On this curtain layer of hard hood, form a patterning photoresist layer, expose a zone;
As etch mask, this curtain layer of hard hood of etching is wherein because trench effect in etching area this curtain layer of hard hood partly can residually be arranged, and the edge of this curtain layer of hard hood forms a plurality of little irrigation canals and ditches in etching area with this patterning photoresist layer;
With this residual curtain layer of hard hood as etch mask, this material layer of patterning; And
Remove this patterning photoresist layer and this curtain layer of hard hood.
2, method of dwindling the pattern lines distance according to claim 1 is characterized in that the wherein said step that forms this curtain layer of hard hood on this material layer, comprising:
On this material layer, form a thin cover curtain layer; And
On this thin cover curtain layer, form a thick cover curtain layer.
3, method of dwindling the pattern lines distance according to claim 2, it is characterized in that wherein said is etch mask with this patterning photoresist layer, the step of this curtain layer of hard hood of etching comprises:
As etch mask, this thick cover curtain layer of etching is wherein because trench effect can residually have this thick cover curtain layer of part, and form these irrigation canals and ditches slightly in this thick cover curtain layer in etching area with this patterning photoresist layer; And
As etch mask, etching should thin cover curtain layer with this patterning photoresist layer and residual this thick cover curtain layer.
4, method of dwindling the pattern lines distance according to claim 2, the material that it is characterized in that wherein said thick cover curtain layer to the etching selectivity of the material of this thin cover curtain layer greater than 1.
5, method of dwindling the pattern lines distance according to claim 2, the material that it is characterized in that wherein said thin cover curtain layer to the etching selectivity of the material of this material layer greater than 10.
6, method of dwindling the pattern lines distance according to claim 4 is characterized in that wherein said thick cover curtain layer comprises a silicon nitride layer.
7, method of dwindling the pattern lines distance according to claim 4 is characterized in that wherein said thin cover curtain layer comprises one silica layer.
8, method of dwindling the pattern lines distance according to claim 5 is characterized in that wherein said material layer comprises a polysilicon layer.
9, method of dwindling the pattern lines distance according to claim 1 is characterized in that wherein saidly forming this slightly after the irrigation canals and ditches, more comprises and carries out first-class to etching step, to adjust this width of irrigation canals and ditches slightly.
10, a kind of formation method of dwindling the patterning cover curtain of pattern lines distance comprises:
In a substrate, form a cover curtain layer;
On this cover curtain layer, form a patterning photoresist layer;
As etch mask, this cover curtain layer of etching is wherein because trench effect in etching area this cover curtain layer partly can residually be arranged, and the edge of this cover curtain layer forms a plurality of little irrigation canals and ditches in etching area with this patterning photoresist layer; And
Remove this patterning photoresist layer.
11, formation method of dwindling the patterning cover curtain of pattern lines distance according to claim 10 is characterized in that wherein said cover curtain layer comprises a silicon nitride layer.
12, formation method of dwindling the patterning cover curtain of pattern lines distance according to claim 10 is characterized in that wherein said cover curtain layer comprises one silica layer.
13, formation method of dwindling the patterning cover curtain of pattern lines distance according to claim 10 is characterized in that in the wherein said substrate forming the step of this cover curtain layer, comprising:
In this substrate, form a thin cover curtain layer; And
On this thin cover curtain layer, form a thick cover curtain layer.
14, formation method of dwindling the patterning cover curtain of pattern lines distance according to claim 13, it is characterized in that wherein said with this patterning photoresist layer as etch mask, the step of this cover curtain layer of etching comprises:
As etch mask, this thick cover curtain layer of etching is wherein because trench effect can residually have this thick cover curtain layer of part, and form these irrigation canals and ditches slightly in this thick cover curtain layer in etching area with this patterning photoresist layer; And
As etch mask, etching should thin cover curtain layer with this patterning photoresist layer and residual this thick cover curtain layer.
15, formation method of dwindling the patterning cover curtain of pattern lines distance according to claim 13, the material that it is characterized in that wherein said thick cover curtain layer to the etching selectivity of the material of this thin cover curtain layer greater than 1.
16, formation method of dwindling the patterning cover curtain of pattern lines distance according to claim 15 is characterized in that wherein said thick cover curtain layer comprises a silicon nitride layer.
17, formation method of dwindling the patterning cover curtain of pattern lines distance according to claim 15 is characterized in that wherein said thin cover curtain layer comprises one silica layer.
18, formation method of dwindling the patterning cover curtain of pattern lines distance according to claim 10 is characterized in that wherein saidly forming this slightly after the irrigation canals and ditches, more comprises and carries out first-class to etching step, to adjust this width of irrigation canals and ditches slightly.
19, a kind of method of dwindling the pattern lines distance is characterized in that it comprises:
In a substrate, form a material layer;
On this material layer, form a patterning cover curtain layer;
With this patterning cover curtain layer is that an etch mask carries out an etch process, in this material layer, to form a plurality of little irrigation canals and ditches, wherein this slightly irrigation canals and ditches be to be formed in this material layer along the sidewall of this patterning cover curtain layer so that this material layer is patterned; And
Remove this patterning cover curtain layer.
20, method of dwindling the pattern lines distance according to claim 19 is characterized in that wherein said etch process comprises a reactive ion etching processing procedure.
21, method of dwindling the pattern lines distance according to claim 20, the polar biased power (bias power) that it is characterized in that wherein said reactive ion etching processing procedure is lower than 150W, and source electrode power supply (source power) power is to be higher than 500W.
22, method of dwindling the pattern lines distance according to claim 20 is characterized in that wherein said if this material layer is a polysilicon layer, and this cover curtain layer is an one silica layer, and then the employed reacting gas of this reactive ion etching processing procedure comprises chlorine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410097017XA CN100424821C (en) | 2004-12-08 | 2004-12-08 | Method for reducing pattern line distance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410097017XA CN100424821C (en) | 2004-12-08 | 2004-12-08 | Method for reducing pattern line distance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1787175A true CN1787175A (en) | 2006-06-14 |
| CN100424821C CN100424821C (en) | 2008-10-08 |
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|---|---|---|---|
| CNB200410097017XA Expired - Fee Related CN100424821C (en) | 2004-12-08 | 2004-12-08 | Method for reducing pattern line distance |
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Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6475922B1 (en) * | 2000-04-25 | 2002-11-05 | Koninklijke Philips Electronics N.V. | Hard mask process to control etch profiles in a gate stack |
| US7163879B2 (en) * | 2002-05-30 | 2007-01-16 | Sharp Kabushiki Kaisha | Hard mask etch for gate polyetch |
| US6734107B2 (en) * | 2002-06-12 | 2004-05-11 | Macronix International Co., Ltd. | Pitch reduction in semiconductor fabrication |
| US6548385B1 (en) * | 2002-06-12 | 2003-04-15 | Jiun-Ren Lai | Method for reducing pitch between conductive features, and structure formed using the method |
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