CN100424821C - Method for reducing pattern line distance - Google Patents
Method for reducing pattern line distance Download PDFInfo
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- CN100424821C CN100424821C CNB200410097017XA CN200410097017A CN100424821C CN 100424821 C CN100424821 C CN 100424821C CN B200410097017X A CNB200410097017X A CN B200410097017XA CN 200410097017 A CN200410097017 A CN 200410097017A CN 100424821 C CN100424821 C CN 100424821C
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Abstract
The present invention relates to a method for reducing pattern line distance. The method comprises the steps that firstly, a material layer, a hard mask layer and a patternized photoresistive layer are orderly formed on a substrate; then, the patternized photoresistive layer is used as an etching mask to, etc. The hard mask layer; simultaneously, because of a load effect, part of the hard mask layer is residually retained in an etching zone, and the edge position of the hard mask layer in the etching zone forms a slight ditch; successively, the residual hard mask layer is used as the etching mask to patternize the material layer; finally, the patternized photoresistive layer and the hard mask layer are removed. Because the present invention uses a ditch effect when the hard mask layer is etched so that part of the hard mask layer is residually retained in the etching zone to form the slight ditch, a slight ditch pattern is continuously transferred to the material layer, and then, the line distance of the pattern is greatly reduced after the material layer is patternized.
Description
Technical field
The present invention relates to a kind of semiconductor technology, particularly relate to a kind of method of dwindling pattern lines apart from (pitch).
Background technology
Under the more and more higher situation of the requirement of productive setization, the design of whole semiconductor element size also is forced to advance toward the direction that size does not stop to dwindle.Change speech, in integrated circuit, the pattern lines distance, i.e. the downsizing of the summation of the live width of pattern and line-spacing is the smaller the better.At present, the technology of integrated circuit at last pattern lines mostly be to utilize lithography process to reach apart from downsizing with high-res.Yet, the lithography process of high-res since the restriction of essential optics so technology comparatively difficulty and cost are also comparatively expensive.For the 248nm exposure technology, even, still can't reach the live width that forms below the 100nm in conjunction with other technology that improves resolution.And, still can't reach the live width that forms below the 70nm for the 193nm exposure technology.And,, the scope of its application will be limited because of the restriction of its light shield and photoresist for the 193nm exposure technology.Yet if can't dwindle the pattern lines distance, it is almost impossible increasing the packaging density of element and the integration of integrated circuit.And the expending of cost also must be considered into.
This shows that above-mentioned existing method of dwindling the pattern lines distance still has many defectives, and demands urgently further being improved.In order to solve existing defective of dwindling the method for pattern lines distance, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but does not see always that for a long time suitable design finished by development, and this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that above-mentioned existing method of dwindling the pattern lines distance exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, actively studied innovation, in the hope of founding a kind of new method of dwindling the pattern lines distance, can improve general existing method of dwindling the pattern lines distance, make it have more practicality.Through constantly research, design, and after studying repeatedly and improving, create the present invention who has practical value finally.
Summary of the invention
The objective of the invention is to, overcome the defective that existing method of dwindling the pattern lines distance exists, and a kind of new method of dwindling the pattern lines distance is provided, technical problem to be solved is to make it effectively dwindle the pattern lines distance of integrated circuit, thereby be suitable for practicality more, and have the value on the industry.
Another object of the present invention is to, a kind of method of dwindling the pattern lines distance is provided, technical problem to be solved is to make it significantly put forward component configuration density in the integrated circuit, thereby is suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of method of dwindling the pattern lines distance that the present invention proposes, it comprises: form a material layer on a substrate; On this material layer, form a hard mask layer; On this hard mask layer, form a patterning photoresist layer, expose an exposed region; As etching mask, this hard mask layer of etching is wherein because trench effect in exposed region this hard mask layer partly can residually be arranged, and the edge of this hard mask layer forms a plurality of irrigation canals and ditches in exposed region with this patterning photoresist layer; With this residual hard mask layer as etching mask, this material layer of patterning; And remove this patterning photoresist layer and this hard mask layer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid method of dwindling the pattern lines distance, the wherein said step that forms this hard mask layer on this material layer comprises: form a thin mask layer on this material layer; And on this thin mask layer, form a thick mask layer.
Aforesaid method of dwindling the pattern lines distance, wherein said is etching mask with this patterning photoresist layer, the step of this hard mask layer of etching, comprise: with this patterning photoresist layer as etching mask, this thick mask layer of etching, wherein because trench effect can residually have this thick mask layer of part, and form these a plurality of irrigation canals and ditches in this thick mask layer in exposed region; And with this patterning photoresist layer and residual this thick mask layer as etching mask, etching should thin mask layer.
Aforesaid method of dwindling the pattern lines distance, the material of wherein said thick mask layer to the etching selectivity of the material of this thin mask layer greater than 1.
Aforesaid method of dwindling the pattern lines distance, the material of wherein said thin mask layer to the etching selectivity of the material of this material layer greater than 10.
Aforesaid method of dwindling the pattern lines distance, wherein said thick mask layer comprises silicon nitride layer.
Aforesaid method of dwindling the pattern lines distance, wherein said thin mask layer comprises silicon oxide layer.
Aforesaid method of dwindling the pattern lines distance, wherein said material layer comprises a polysilicon layer.
Aforesaid method of dwindling the pattern lines distance, wherein said after forming these a plurality of irrigation canals and ditches, more comprise and carry out first-class, to adjust the width of these a plurality of irrigation canals and ditches to etching step.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.According to a kind of formation method of dwindling the patterned mask of pattern lines distance that the present invention proposes, it comprises: form a mask layer on a substrate; On this mask layer, form a patterning photoresist layer; As etching mask, this mask layer of etching is wherein because trench effect in exposed region this mask layer partly can residually be arranged, and the edge of this mask layer forms a plurality of irrigation canals and ditches in exposed region with this patterning photoresist layer; And remove this patterning photoresist layer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid formation method of dwindling the patterned mask of pattern lines distance, wherein said mask layer comprises silicon nitride layer.
Aforesaid formation method of dwindling the patterned mask of pattern lines distance, wherein said mask layer comprises silicon oxide layer.
Aforesaid formation method of dwindling the patterned mask of pattern lines distance, the step of this mask layer of formation on the wherein said substrate comprises: form a thin mask layer on this substrate; And on this thin mask layer, form a thick mask layer.
Aforesaid formation method of dwindling the patterned mask of pattern lines distance, wherein said with this patterning photoresist layer as etching mask, the step of this mask layer of etching, comprise: with this patterning photoresist layer as etching mask, this thick mask layer of etching, wherein because trench effect can residually have this thick mask layer of part, and form these a plurality of irrigation canals and ditches in this thick mask layer in exposed region; And with this patterning photoresist layer and residual this thick mask layer as etching mask, etching should thin mask layer.
Aforesaid formation method of dwindling the patterned mask of pattern lines distance, the material of wherein said thick mask layer to the etching selectivity of the material of this thin mask layer greater than 1.
Aforesaid formation method of dwindling the patterned mask of pattern lines distance, wherein said thick mask layer comprises silicon nitride layer.
Aforesaid formation method of dwindling the patterned mask of pattern lines distance, wherein said thin mask layer comprises silicon oxide layer.
Aforesaid formation method of dwindling the patterned mask of pattern lines distance, wherein said after forming these a plurality of irrigation canals and ditches, more comprise and carry out first-class, to adjust the width of these a plurality of irrigation canals and ditches to etching step.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.A kind of method of dwindling the pattern lines distance according to the present invention proposes comprises: form a material layer on a substrate; On this material layer, form a patterned mask layer; With this patterned mask layer is that an etching mask carries out an etch process, and to form a plurality of irrigation canals and ditches in this material layer, wherein these a plurality of irrigation canals and ditches are to be formed in this material layer along the sidewall of this patterned mask layer, so that this material layer is patterned; And remove this patterned mask layer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid method of dwindling the pattern lines distance, wherein said etch process comprises a reactive ion etch process.
Aforesaid method of dwindling the pattern lines distance, the polar biased power of wherein said reactive ion etch process (bias power) is lower than 150W, and source electrode power supply (source power) power is to be higher than 500W.
Aforesaid method of dwindling the pattern lines distance, it is wherein said that this mask layer is an one silica layer if this material layer is a polysilicon layer, then the employed reacting gas of this reactive ion etch process comprises chlorine.The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to reach aforementioned goal of the invention, major technique of the present invention thes contents are as follows:
The present invention proposes a kind of method of dwindling the pattern lines distance, is included in and forms a material layer, a hard mask layer and a patterning photoresist layer on the substrate in regular turn.Then, as etching mask, the etching hard mask layer is at this moment because trench effect (trenching effect) with the patterning photoresist layer, therefore can residual in exposed region the part hard mask layer be arranged, and the edge of hard mask layer forms irrigation canals and ditches (micro-trench) in exposed region.Subsequently, again with residual hard mask layer or with patterning photoresist layer and residual hard mask layer as etching mask, and with material layer patternization.Afterwards, again patterning photoresist layer and hard mask layer are removed.Because the present invention utilizes trench effect with when the etching hard mask layer, make that the edge of hard mask layer is formed with irrigation canals and ditches in the exposed region, therefore, follow-up again with the irrigation canals and ditches design transfer to material layer, and after material layer was patterned, the line-spacing of its pattern will significantly dwindle.
The present invention proposes a kind of formation method of dwindling the patterned mask of pattern lines distance in addition, and its step is included in and forms a mask layer on the substrate.Then, on mask layer, form a patterning photoresist layer.Afterwards, with the patterning photoresist layer as etching mask, etch mask layer, and form the patterned mask layer.This moment is because trench effect, therefore can be in exposed region the mask layer of residual fraction, and the edge of hard mask layer forms irrigation canals and ditches in exposed region.Then the patterning photoresist layer is removed.
The present invention proposes a kind of method of dwindling the pattern lines distance again, and the method is at first to form a material layer on a substrate, forms a patterned mask layer then on material layer.Afterwards, with above-mentioned patterned mask layer is that an etching mask carries out an etch process, and it for example is a reactive ion etch process, to form several irrigation canals and ditches in material layer, wherein above-mentioned irrigation canals and ditches are to be formed in the material layer along the mask layer pattern sidewalls, so that material layer is patterned.At last, remove mask layer.
By technique scheme, the present invention has following advantage at least:
The present invention is because utilize known in the trench effect of carrying out the desire elimination of patterning time institute, and make the residual etch layer that part is arranged in the district that is exposed, to form irrigation canals and ditches in the edge of exposed region, therefore follow-up again with this etch layer during as etching mask, can dwindle the pattern lines distance, thereby be suitable for practicality more.
The present invention utilizes special reactive ion etch process to come etched material layer, so that reactive ion is along the etching of mask layer pattern sidewalls, and forms irrigation canals and ditches in material layer, and then makes material layer patternization, can dwindle the pattern lines distance, thereby be suitable for practicality more.
The present invention utilizes special reactive ion etch process, in material layer, to form irrigation canals and ditches, and material layer is patterned, and the line-spacing of its characteristic pattern of material layer of patterning can dwindle about half than known techniques, therefore method of the present invention can effectively be dwindled the pattern lines distance, and then improves the integration of element.
In sum, the method of dwindling the pattern lines distance that the present invention is special, it has above-mentioned many advantages and practical value, and in class methods, do not see have similar design to publish or use and really genus innovation, no matter it is all having bigger improvement on method or on the function, have large improvement technically, and produced handy and practical effect, and more existing method of dwindling the pattern lines distance has the multinomial effect of enhancement, thereby be suitable for practicality more, and have the extensive value of industry, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Figure 1A to Fig. 1 E is the manufacturing process generalized section of dwindling pattern lines distance (pitch) according to a preferred embodiment of the present invention.
Fig. 2 A to Fig. 2 C is the manufacturing process generalized section of dwindling the pattern lines distance according to another preferred embodiment of the present invention.
100: substrate 102: material layer
102a: the material layer 104 of patterning: hard mask layer
105: thin mask layer 107: thick mask layer
108: patterning photoresist layer 109: the patterned mask layer
110,112: irrigation canals and ditches d
1, d
2: line-spacing
Embodiment
Below in conjunction with accompanying drawing and preferred embodiment, to its concrete grammar step of the method for dwindling the pattern lines distance, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
First embodiment
Seeing also shown in Figure 1A to Fig. 1 E, is the manufacturing process generalized section of dwindling pattern lines distance (pitch) according to a preferred embodiment of the present invention.See also Figure 1A, form layer of material layer 102, a hard mask layer (hard mask layer) 104 and one deck patterning photoresist layer 108 in regular turn on a substrate 100, wherein the material of material layer 102 for example is electric conducting material or insulating material.And forming the step of hard mask layer 104 on the material layer 102 such as be on material layer 102, to form a thin mask layer 105 earlier, on thin mask layer 105, form a thick mask layer 107 again.And be patterned the zone that photoresist layer 108 exposed is to be defined as an exposed region 120.
At this, the etching selectivity of the material of 107 pairs of thin mask layers 105 of thick mask layer is greater than 1, and the etching selectivity of 102 pairs of thin mask layers 105 of material layer for example is greater than 10.This is will carry out etching to thick mask layer 107 earlier because of follow-up, utilizes thick mask layer 107 to come patterning to approach mask layer 105 as etching mask afterwards again, and therefore the etching selectivity of the material of 107 pairs of thin mask layers 105 of thick mask layer is to need greater than 1.In addition, if the etching selectivity of 102 pairs of thin mask layers 105 of material layer is enough big, just thin mask layer 105 can be done thinlyyer, so that follow-up etching accuracy lifting when patterned material layer.In a preferred embodiment, the material of thin mask layer 105 for example is a silica, and the material of thick mask layer 107 for example is a silicon nitride layer.
In prior art method, when desiring to carry out patterned mask layer 104, normally can avoid trench effect to take place as far as possible.In addition, known pattern lines is apart from normally being decided by the opening in the photoresist layer 108, so pattern lines is apart from the restriction that will be subject to lithography process, that is known pattern lines is apart from being d among Figure 1A
1Yet the present invention but contrary operation utilizes load effect to reach the present invention on the contrary, as following Figure 1B.
See also Figure 1B, with patterning photoresist layer 108 as etching mask, etching hard mask layer 104.At this moment, because therefore trench effect can residually in exposed region 120 have part hard mask layer 104, and the edge of hard mask layer forms irrigation canals and ditches 110 in exposed region 120.And when hard mask layer 104, shown in Figure 1A, when being formed, be the thick mask layer 107 of first etching by thin mask layer 105 and thick mask layer 107, the thick mask layer 107 of meeting this moment residual fraction in exposed region 120, and in etched thick mask layer 107, form irrigation canals and ditches 110.
Afterwards, see also Fig. 1 C, as etching mask, etching approaches mask layer 105, also to form irrigation canals and ditches 110 in thin mask layer 105 with patterning photoresist layer 108 and residual thick mask layer 107.
What is particularly worth mentioning is that the present invention can utilize the mode of adjusting etching parameter to adjust the width of irrigation canals and ditches 110.Or after forming irrigation canals and ditches 110, increase the width that one isotropic etching step adjusted irrigation canals and ditches 110 again.
Then, see also Fig. 1 D, with residual hard mask layer 104 as etching mask, or with photoresist layer 108 and residual hard mask layer 104 as etching mask, with material layer 102 patternings.At this moment, because hard mask layer 104 has irrigation canals and ditches 110,, and form the material layer 102a of patterning so material layer 102 equally also can be etched goes out irrigation canals and ditches 110.
Then, see also Fig. 1 E, patterning photoresist layer 108 and hard mask layer 104 (asking for an interview Fig. 1 D) are removed, and the material layer 102a of patterning is come out.By this figure as can be known, the line-spacing of the material layer pattern of present embodiment is d
2, and with the formed pattern lines of known techniques apart from being d among Figure 1A
1, it is the restriction of lithography process, and d
2In fact less than d
1And the line-spacing of pattern is d
2Almost be that pattern lines is apart from d
1Half (shown in Figure 1A), and the width of the spacing of patterning photoresist layer 108 line of material layer 102a and the size of two interspaces no better than.Therefore method of the present invention can effectively be dwindled the pattern lines distance really.
Therefore, characteristics of the present invention are the trench effect that are to utilize the desire elimination of known institute, and form irrigation canals and ditches at etched edges of regions place, to reach the purpose of the line-spacing that dwindles pattern.
Second embodiment
Seeing also shown in Fig. 2 A to Fig. 2 C, is the method flow generalized section of dwindling line-spacing according to another preferred embodiment of the present invention.See also Fig. 2 A, form a material layer 102 on substrate 100, the material of material layer 102 can be insulating material or electric conducting material.Afterwards, form a patterned mask layer 109 on material layer 102, wherein the material of patterned mask layer 109 for example is the photoresist material, or and material layer between have the material of etching selectivity.Particularly, the line-spacing d1 between the patterned mask layer 109 is the limit for lithography process.
See also Fig. 2 B, carry out an etch process with patterned mask layer 109 as an etching mask, to form several irrigation canals and ditches 112 in material layer 102, wherein irrigation canals and ditches 112 are to be formed in the material layer 102 along patterned mask layer 109 sidewall, so that material layer 102 is patterned.In a preferred embodiment, the etch process that forms irrigation canals and ditches 112 in material layer 102 for example is a reactive ion etch process (RIE), and the pressure of reactive ion etch process is to be higher than 10mTorr, its polar biased power (biaspower) is to be lower than 150W, and its source electrode power supply (source power) power is to be higher than 500W.And its etching reaction gas is to decide according to the material of material layer 102, for example if use the material of polysilicon as material layer 102, and use the material of silica as patterned mask layer 109, then the employed reacting gas of its reactive ion etch process comprises chlorine.
See also Fig. 2 C, remove mask layer 109, expose the material layer 102a with characteristic pattern, wherein the line-spacing of the characteristic pattern 102a of material layer is d2, and this line-spacing d2 has dwindled about half approximately compared to the line-spacing of previous lithography process restriction.
The present invention utilizes special reactive ion etch process, in material layer, to form irrigation canals and ditches, and material layer is patterned, and the line-spacing of its characteristic pattern of material layer of patterning can dwindle about half than known techniques, therefore method of the present invention can effectively be dwindled the pattern lines distance, and then improves the integration of element.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (22)
1. method of dwindling the pattern lines distance is characterized in that it comprises:
On a substrate, form a material layer;
On this material layer, form a hard mask layer;
On this hard mask layer, form a patterning photoresist layer, expose an exposed region;
As etching mask, this hard mask layer of etching is wherein because trench effect in exposed region this hard mask layer partly can residually be arranged, and the edge of this hard mask layer forms a plurality of irrigation canals and ditches in exposed region with this patterning photoresist layer;
With this residual hard mask layer as etching mask, this material layer of patterning; And
Remove this patterning photoresist layer and this hard mask layer.
2. method of dwindling the pattern lines distance according to claim 1 is characterized in that the wherein said step that forms a hard mask layer on this material layer, comprising:
On this material layer, form a thin mask layer; And
On this thin mask layer, form a thick mask layer.
3. method of dwindling the pattern lines distance according to claim 2, it is characterized in that wherein said with this patterning photoresist layer as etching mask, the step of this hard mask layer of etching comprises:
As etching mask, this thick mask layer of etching is wherein because trench effect can residually have this thick mask layer of part, and form these a plurality of irrigation canals and ditches in this thick mask layer in exposed region with this patterning photoresist layer; And
As etching mask, etching should thin mask layer with this patterning photoresist layer and residual this thick mask layer.
4. method of dwindling the pattern lines distance according to claim 2, the material that it is characterized in that wherein said thick mask layer to the etching selectivity of the material of this thin mask layer greater than 1.
5. method of dwindling the pattern lines distance according to claim 2, the material that it is characterized in that wherein said thin mask layer to the etching selectivity of the material of this material layer greater than 10.
6. method of dwindling the pattern lines distance according to claim 4 is characterized in that wherein said thick mask layer comprises a silicon nitride layer.
7. method of dwindling the pattern lines distance according to claim 4 is characterized in that wherein said thin mask layer comprises a silicon oxide layer.
8. method of dwindling the pattern lines distance according to claim 5 is characterized in that wherein said material layer comprises a polysilicon layer.
9. method of dwindling the pattern lines distance according to claim 1, it is characterized in that wherein said in exposed region the edge of this hard mask layer form after a plurality of irrigation canals and ditches, more comprise and carry out first-class, to adjust the width of these a plurality of irrigation canals and ditches to etching step.
10. the formation method that can dwindle the patterned mask of pattern lines distance comprises:
On a substrate, form a mask layer;
On this mask layer, form a patterning photoresist layer;
As etching mask, this mask layer of etching is wherein because trench effect in exposed region this mask layer partly can residually be arranged, and the edge of this mask layer forms a plurality of irrigation canals and ditches in exposed region with this patterning photoresist layer; And
Remove this patterning photoresist layer.
11. formation method of dwindling the patterned mask of pattern lines distance according to claim 10 is characterized in that wherein said mask layer comprises a silicon nitride layer.
12. formation method of dwindling the patterned mask of pattern lines distance according to claim 10 is characterized in that wherein said mask layer comprises a silicon oxide layer.
13. formation method of dwindling the patterned mask of pattern lines distance according to claim 10 is characterized in that on the wherein said substrate forming the step of this mask layer, comprising:
On this substrate, form a thin mask layer; And
On this thin mask layer, form a thick mask layer.
14. formation method of dwindling the patterned mask of pattern lines distance according to claim 13, it is characterized in that wherein said with this patterning photoresist layer as etching mask, the step of this mask layer of etching comprises:
As etching mask, this thick mask layer of etching is wherein because trench effect can residually have this thick mask layer of part, and form these a plurality of irrigation canals and ditches in this thick mask layer in exposed region with this patterning photoresist layer; And
As etching mask, etching should thin mask layer with this patterning photoresist layer and residual this thick mask layer.
15. formation method of dwindling the patterned mask of pattern lines distance according to claim 13, the material that it is characterized in that wherein said thick mask layer to the etching selectivity of the material of this thin mask layer greater than 1.
16. formation method of dwindling the patterned mask of pattern lines distance according to claim 15 is characterized in that wherein said thick mask layer comprises a silicon nitride layer.
17. formation method of dwindling the patterned mask of pattern lines distance according to claim 15 is characterized in that wherein said thin mask layer comprises a silicon oxide layer.
18. formation method of dwindling the patterned mask of pattern lines distance according to claim 10, it is characterized in that wherein said in exposed region the edge of this mask layer form after a plurality of irrigation canals and ditches, more comprise and carry out first-class, to adjust the width of these a plurality of irrigation canals and ditches to etching step.
19. a method of dwindling the pattern lines distance is characterized in that it comprises:
On a substrate, form a material layer;
On this material layer, form a patterned mask layer;
With this patterned mask layer is that an etching mask carries out an etch process, because trench effect, this material layer that part can residually be arranged in exposed region, in this material layer, to form a plurality of irrigation canals and ditches, wherein these a plurality of irrigation canals and ditches are along the sidewall of this patterned mask layer and be formed in this material layer, so that this material layer is patterned; And
Remove this patterned mask layer.
20. method of dwindling the pattern lines distance according to claim 19 is characterized in that wherein said etch process comprises a reactive ion etch process.
21. method of dwindling the pattern lines distance according to claim 20, the polar biased power that it is characterized in that wherein said reactive ion etch process is to be lower than 150W, and the source electrode power is to be higher than 500W.
22. method of dwindling the pattern lines distance according to claim 20 is characterized in that wherein said this material layer is a polysilicon layer, this mask layer is a silicon oxide layer, and the employed reacting gas of this reactive ion etch process comprises chlorine.
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| CNB200410097017XA CN100424821C (en) | 2004-12-08 | 2004-12-08 | Method for reducing pattern line distance |
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|---|---|---|---|
| CNB200410097017XA CN100424821C (en) | 2004-12-08 | 2004-12-08 | Method for reducing pattern line distance |
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| CN100424821C true CN100424821C (en) | 2008-10-08 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6475922B1 (en) * | 2000-04-25 | 2002-11-05 | Koninklijke Philips Electronics N.V. | Hard mask process to control etch profiles in a gate stack |
| US20030222287A1 (en) * | 2002-05-30 | 2003-12-04 | Koji Tamura | Hard mask etch for gate polyetch |
| CN1471129A (en) * | 2002-06-12 | 2004-01-28 | 旺宏电子股份有限公司 | Semiconductor structure and method for forming transistor with reduced interval |
| CN1471134A (en) * | 2002-06-12 | 2004-01-28 | �����ɷ� | Method for reducing conductor pattern interval and structure formed thereby |
-
2004
- 2004-12-08 CN CNB200410097017XA patent/CN100424821C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6475922B1 (en) * | 2000-04-25 | 2002-11-05 | Koninklijke Philips Electronics N.V. | Hard mask process to control etch profiles in a gate stack |
| US20030222287A1 (en) * | 2002-05-30 | 2003-12-04 | Koji Tamura | Hard mask etch for gate polyetch |
| CN1471129A (en) * | 2002-06-12 | 2004-01-28 | 旺宏电子股份有限公司 | Semiconductor structure and method for forming transistor with reduced interval |
| CN1471134A (en) * | 2002-06-12 | 2004-01-28 | �����ɷ� | Method for reducing conductor pattern interval and structure formed thereby |
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| CN1787175A (en) | 2006-06-14 |
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