CN1290158C - Method for forming self-aligning contact window structure - Google Patents
Method for forming self-aligning contact window structure Download PDFInfo
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- CN1290158C CN1290158C CN 02151352 CN02151352A CN1290158C CN 1290158 C CN1290158 C CN 1290158C CN 02151352 CN02151352 CN 02151352 CN 02151352 A CN02151352 A CN 02151352A CN 1290158 C CN1290158 C CN 1290158C
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Abstract
The present invention discloses a method for forming a self-aligned contact window construction with a local etching gate conductive layer, which comprises following steps that a substrate is prepared, a plurality of separated gate structures are formed on the substrate, and each gate structure comprises a first conductive layer, a second conductive layer and an insulating layer; a photoresist material layer is deposited on the substrate; a bit line contact node mask or a bit line contact window mask and a photolithographic process are used to expose the surface of partial substrate; the exposed second conductive layer is etched by an appropriate etching agent; the residual photoresist material layer is removed; the side wall of each gate structure is formed with a side wall spacing layer; a dielectric layer for covering the substrate is formed; the dielectric layer is removed by photolithography and etching to form a self-aligned contact window construction.
Description
Technical field
The present invention relates to a kind of method that forms the self-aligned contacts window construction; Particularly, the present invention relates to a kind of removal prior art formed grid conductor/bit line contacting window (gateconductor/bitline contact, GC/CB) method of the technology permissible range (process window) that the shortcoming of short circuit and increase are bigger in semiconductor technology.
Background technology
Generally speaking, metal-oxide semiconductor (MOS) (MOS) device is made of metal level, silicon oxide layer and substrate.Because the tackness of metal and oxide is not good, often use the conductive layer of polysilicon substituted metal with the grid structure of formation MOS device.Yet the shortcoming of polysilicon is its resistance than the metal height, though it can be by doping impurity reducing resistance, yet the conductivity that is produced still can't be as favorable conductive layer in the MOS device.A kind of common solution is to increase the layer of metal silicide on polysilicon layer, and tungsten silicide (WSi) layer for example is with the conductivity of improvement grid structure.
In the prior art, the method for formation contact structure comprises the following steps: to form dielectric layer, forms contact hole (contact window) and forms metal level.When the Metal Contact (metal contact) that forms between metal level and substrate, the most widely used method is the autoregistration engraving method.
Figure 1A to Fig. 1 C is depicted as the conventional method that forms grid structure, and its process is as described below:
With reference to Figure 1A, at first prepare a substrate 2; Then form a plurality of separate gate structures on substrate 2, wherein each grid structure comprises one first conductive layer 4, one second conductive layer 6, an insulating barrier 8 and a side wall spacers (spacer) 10.After grid forms, form a dielectric layer 12 and cover entire substrate 2.
With reference to Figure 1B, then on dielectric layer 12, carry out photoetching and etching step and come out until the upper surface of substrate 2 between grid structure, to remove a selected part.This etching step is also effective to insulating barrier 8 and side wall spacers 10, because its rate of etch is slower, therefore has only partial insulating layer 8 and side wall spacers 10 also etched.As a result, between grid structure, form contact hole 20, but its autoregistration forms the position of contact area to the substrate 2.As shown in FIG., contact area is formed at the exposed surface place of substrate 2, and its width is X.
With reference to figure 1C, then the upper surface at whole this substrate deposits the metal level 14 of a specific thicknesses with the exposed surface that covers dielectric layer 12, the side wall spacers 10 and the substrate 2 of grid structure.Forming a width between metal level 14 and substrate 2 by this in self-aligned contacts window 20 is the Metal Contact of X.
Contact area between the contact resistance of aforementioned self-aligned contacts (contact resistance) value and metal level 14 and the substrate 2 (zone that is indicated by width X just) is proportional.Can be in etching process by the method that prolongs etching period to increase contact area.If yet etching period control is improper, this method can cause insulating barrier 8 and side wall spacers 10 by over etching, and second conductive layer 6 below it is exposed.The part that second conductive layer 6 is exposed out can contact with metal level 14 and causes short circuit at point 16.
In order to improve above-mentioned traditional handicraft, the prior art United States Patent (USP) provides a kind of modification method (please refer to shown in Fig. 2 A to 2D) that forms the self-aligned contacts window construction for the 5th, 989, No. 987, and this method is as follows:
With reference to figure 2A, at first prepare a substrate 2, be one first conductive layer 4, one second conductive layer 6 and an insulating barrier 8 in regular turn on it, wherein this first conductive layer can be polysilicon (polysilicon) layer or amorphous silicon (amorphous silicon) layer; Then be etched to the surface of substrate 2 to form a plurality of separate gate structures by dry-etching (dry etching).
With reference to figure 2B, then with NH
4OH, H
2O
2And H
2Etchant (etchant) etching second conductive layer 6 that O mixes.Though the purpose of this etchant is to be used for etching second conductive layer 6, also can be with than first conductive layer 4 of slow rate etching under it.After etching is finished, on each grid structure, form a side wall spacers 10.
With reference to figure 2C, then the upper surface at whole this substrate forms a dielectric layer 12, to cover the exposed surface of all grid structures and substrate 2.Then removing the selected part of dielectric layer 12 between grid structure is exposed out until the upper surface of substrate 2.
With reference to figure 2D, then the upper surface at whole this substrate deposits the metal level 14 of a specific thicknesses with the exposed surface that covers dielectric layer 12, the side wall spacers 10 and the substrate 2 of grid structure.In self-aligned contacts window 20, between metal level 14 and substrate 2, form a Metal Contact by this.
Above-mentioned prior art United States Patent (USP) the 5th, 989, how the advantage of No. 987 methods that provide has been the etching step at second conductive layer 6, causing the width of second conductive layer 6 is narrow by this etching step than insulating barrier on it 8, forms big technology permissible range (process window) by this and causes short circuit to avoid second conductive layer 6 to contact with metal level 14 at point 16 places.
Yet, United States Patent (USP) the 5th, 989, the method of the formation self-aligned contacts window construction that is provided for No. 987 has following shortcoming: the etching step of (1) second conductive layer 6 is comprehensive etching, for the zone that can not cause grid conductor/bit line contacting window short circuit, second conductive layer 6 is also etched, because the both sides sectional area of second conductive layer 6 diminishes, causes the resistance value of grid conductor to rise; (2) this etching step can cause the contact area of second conductive layer 6 and first conductive layer 4 to reduce, if contact area reduces when too much, then can cause at subsequent technique and peel off (peeling) phenomenon.
Summary of the invention
Main purpose of the present invention is to provide the method that forms the self-aligned contacts window construction with local etching second conductive layer, the formed self-aligned contacts window construction of this method can form sectional area, the resistance value of big technology permissible range, second conductive layer and avoid second conductive layer and first conductive layer between peel off phenomenon.Method according to first embodiment of the invention comprises:
(1) deposition one first conductive layer on the entire upper surface of a substrate;
(2) deposition one second conductive layer on the entire upper surface of this first conductive layer;
(3) deposition one insulating barrier on the entire upper surface of this second conductive layer;
(4) carry out photoetching and etch process to form a plurality of grid structures;
(5) deposition one photo anti-corrosion agent material layer on whole this substrate, or earlier deposition one deck anti-reflecting layer (anti-reflective coating deposits a photo anti-corrosion agent material layer after ARC) again;
(6) use photoetching process or photoetching and etch process to be used to form this photo anti-corrosion agent material layer of bit line contact point one side or this photo anti-corrosion agent material layer and this anti-reflecting layer at each grid structure and to form and contain an opening emerges part grid structure at least with bit line contact node mask (bit-line contact node mask) until substrate surface to remove;
(7) etchant that uses rate of etch to second conductive layer to be higher than the rate of etch of this insulating barrier and this first conductive layer is used to form this second conductive layer that bit line contacts a side with this exposure grid structure of etching;
(8) remove this photo anti-corrosion agent material layer or this photo anti-corrosion agent material layer and this anti-reflecting layer;
(9) on the sidewall of each grid structure, form a side wall spacers;
(10) form a dielectric layer that covers whole this substrate;
(11) mat photoetching and etch process are removed and to be used to form the dielectric layer that bit line contacts a side to be exposed out to form the self-aligned contacts window until the surface of substrate between each grid structure; And
(12) metal level of the side wall spacers of the surface that is exposed out of formation covering dielectric layer, grid structure, and the substrate surface that is exposed out between this metal level and this substrate forms self-aligned contacts.
Method comprises according to another embodiment of the present invention:
(1) deposition one first conductive layer on the entire upper surface of a substrate;
(2) deposition one second conductive layer on the entire upper surface of this first conductive layer;
(3) deposition one insulating barrier on the entire upper surface of this second conductive layer;
(4) carry out photoetching and etch process to form a plurality of grid structures;
(5) deposition one photo anti-corrosion agent material layer on whole this substrate, or earlier deposition one deck anti-reflecting layer (anti-reflective coating deposits one deck photo anti-corrosion agent material layer after ARC) again;
(6) use photoetching process or photoetching and etch process to contain a circular open expose portion grid structure at least until substrate surface with bit line contacting window mask (bit-line contact mask) between grid structure, to form;
(7) use rate of etch to second conductive layer to be higher than to an etchant of the rate of etch of this insulating barrier and this first conductive layer this second conductive layer with this exposure grid structure of etching;
(8) remove this photo anti-corrosion agent material layer or this photo anti-corrosion agent material layer and this anti-reflecting layer;
(9) on the sidewall of each grid structure, form a side wall spacers;
(10) form a dielectric layer that covers whole this substrate;
(11) mat photoetching and etch process are removed and to be used to form the dielectric layer that bit line contacts a side to be exposed out to form the self-aligned contacts window until the surface of substrate between each grid structure; And
(12) metal level of the side wall spacers of the surface that is exposed out of formation covering dielectric layer, grid structure, and the substrate surface that is exposed out between this metal level and this substrate forms self-aligned contacts.
The invention provides the method that a kind of formation has the grid structure of local etching conductive layer, comprise step:
(1) prepares a Semiconductor substrate, wherein be formed with a plurality of separate gate structures on this substrate, wherein each grid structure comprises one first conductive layer that is formed on this substrate, is formed at one second conductive layer on this first conductive layer and is formed at a insulating barrier on this second conductive layer;
(2) use a mask on this substrate, to form and contain the cover layer of an opening emerges part grid structure at least until substrate surface;
(3) use rate of etch to second conductive layer to be higher than to an etchant of the rate of etch of this insulating barrier and this first conductive layer this second conductive layer with this exposure grid structure of etching;
(4) remove this cover layer; And
(5) on the sidewall of each grid structure, form a side wall spacers.
The invention provides the method that a kind of formation has the self-aligned contacts window construction of local etching conductive layer, comprise the following steps:
(1) prepares a Semiconductor substrate, wherein be formed with a plurality of separate gate structures on this substrate, wherein each grid structure comprises one first conductive layer that is formed on this substrate, is formed at one second conductive layer on this first conductive layer and is formed at a insulating barrier on this second conductive layer;
(2) use bit line contact node mask to contain the cover layer of an opening emerges part grid structure at least until substrate surface in the side formation that each grid structure desire forms bit line;
(3) use rate of etch to second conductive layer to be higher than this second conductive layer that an etchant of the rate of etch of this insulating barrier and this first conductive layer is used to form the side that bit line contacts with etching this exposure grid structure;
(4) remove this cover layer;
(5) on the sidewall of each grid structure, form a side wall spacers;
(6) form a dielectric layer that covers whole this substrate;
(7) use photoetching and etch process to be exposed out until the surface of substrate, form the self-aligned contacts window by this with the dielectric layer of removing a side that between each grid structure, is used to form the bit line contact; And
(8) metal level of the side wall spacers of the etched surface of formation covering dielectric layer and grid structure, and on the substrate surface that is exposed out between this metal level and this substrate, form self-aligned contacts.
The invention provides the method that a kind of formation has the self-aligned contacts window construction of local etching conductive layer, comprise the following steps:
(1) prepares a Semiconductor substrate, wherein be formed with a plurality of separate gate structures on this substrate, wherein each grid structure comprises one first conductive layer that is formed on this substrate, is formed at one second conductive layer on this first conductive layer and is formed at a insulating barrier on this second conductive layer;
(2) use the bit line contacting window mask to contain the cover layer of a circular open expose portion grid structure until substrate surface at least to form between grid structure, this opening be the zone of self-aligned contacts window afterwards;
(3) use rate of etch to second conductive layer to be higher than to an etchant of the rate of etch of this insulating barrier and this first conductive layer this second conductive layer with this exposure grid structure of etching;
(4) remove this cover layer;
(5) on the sidewall of each grid structure, form a side wall spacers;
(6) form a dielectric layer that covers whole this substrate;
(7) mat photoetching and etch process are exposed out to form the self-aligned contacts window until the surface of substrate with the dielectric layer of removing a side that is used to form the bit line contact between each grid structure; And
(8) metal level of the side wall spacers of the etched surface of formation covering dielectric layer and grid structure, and the substrate surface that is exposed out between this metal level and this substrate forms self-aligned contacts.
The invention provides a kind of grid structure, comprising with local etching conductive layer:
(1) semi-conductive substrate;
(2) one first conductive layers, it is formed on this substrate;
(3) one second conductive layers, it is formed on this first conductive layer; And
(4) one insulating barriers, it is formed on this second conductive layer,
Wherein this second conductive layer only has a side by local etching, thereby the etched portion of this second conductive layer is recessed with respect to the edge of this insulating barrier, and a self-aligned contacts window will form in this side.
The invention provides a kind of self-aligned contacts window construction, comprising with local etching conductive layer:
(1) semi-conductive substrate;
(2) a plurality of separate gate structures that are formed on this substrate, wherein each grid structure comprises:
(a) one first conductive layer that on the surface of this substrate, deposits;
(b) one second conductive layer that on the surface of this first conductive layer, deposits; And
(c) insulating barrier that on the surface of this second conductive layer, deposits, wherein this second conductive layer
One side is only arranged by local etching, thereby the etched portion of this second conductive layer is with respect to this insulating barrier
The edge recessed, a self-aligned contacts window will form in this side;
(3) one side wall spacers, it is formed on the sidewall of each grid structure;
(4) one dielectric layers, it covers the side that each those grid structures are not used to form the self-aligned contacts window construction; And
(5) one metal levels, it covers those side wall spacers and this substrate of this dielectric layer, each those grid structures, and wherein this metal level does not contact with this second conductive layer.
Description of drawings
The present invention describes by embodiment and its accompanying drawing, so that technology contents of the present invention, feature and effect be easy to understand, wherein:
Figure 1A to Fig. 1 C is for forming the conventional method of self-aligned contacts window construction;
Fig. 2 A to Fig. 2 D is the method that the prior art United States Patent (USP) forms the self-aligned contacts window construction for the 5th, 989, No. 987;
Fig. 3 A to Fig. 3 F is the structure according to gained after each step of first embodiment of the invention formation self-aligned contacts window construction method;
Fig. 4 A to Fig. 4 B is the flow chart that forms the method for self-aligned contacts window construction according to first embodiment of the invention;
Fig. 5 A to Fig. 5 F is the structure according to gained after each step of second embodiment of the invention formation self-aligned contacts window construction method;
Fig. 5 G is the vertical view of second conductive layer among Fig. 5 F; And
Fig. 6 A to Fig. 6 B is the flow chart that forms the method for self-aligned contacts window construction according to second embodiment of the invention.
Description of reference numerals in the accompanying drawing is as follows:
2 substrates, 4 first conductive layers
6 second conductive layers, 8 insulating barriers
10 side wall spacers, 12 dielectric layers
14 metal levels, 16 points
20 self-aligned contacts windows, 22 photo anti-corrosion agent material layers
Embodiment
The first embodiment of the present invention is represented by the method shown in the structure shown in Fig. 3 A to Fig. 3 F and Fig. 4 A to Fig. 4 B flow chart.
At first prepare a substrate 2, form one first conductive layer 4, one second conductive layer 6 and an insulating barrier 8 on it in regular turn.First conductive layer 4 can be polysilicon (polysilicon) or amorphous silicon (amorphoussilicon) layer, and second conductive layer 6 can be metal silicide layer, and as tungsten silicide (WSi), insulating barrier can be silicon nitride (SiN) layer.Then, shown in Fig. 4 A, open grid conductor (gate conductor, GC) mask (step 401); Then carry out etch process and be etched to substrate surface to form a plurality of grid structures (step 402).
Then, shown in Fig. 3 A and Fig. 4 A, deposition one photo anti-corrosion agent material layer 22 on whole this substrate, or (anti-reflective coating ARC) deposits a photo anti-corrosion agent material layer 22 (step 403) again after the (not shown) to deposit an anti-reflecting layer earlier.
Then, shown in Fig. 3 B and Fig. 4 A, 4B, use bit line contact node mask (bit-line contactnode mask) not have bit line one side (step 404) to shelter each grid structure; Then use photoetching or photoetching and etch process to form opening until exposing substrate surface (step 405) to form bit line one side in the grid structure desire, this etch process can be dry-etching; Then use a kind of rate of etch to be higher than etchant to the rate of etch of the insulating barrier 8 and first conductive layer 4 (NH for example to second conductive layer 6
4OH, H
2O
2And H
2The etchant that O mixes) do not sheltered side (step 406) by photo anti-corrosion agent material layer 22 with etching second conductive layer 6, this etching can be isotropism (isotropic) etching.
Then, shown in Fig. 3 C and Fig. 4 B, remove photo anti-corrosion agent material layer 22 and anti-reflecting layer (if any) (step 407).
Then, shown in Fig. 3 D and Fig. 4 B, on the sidewall of each self-aligned contacts window construction, form a side wall spacers 10 (step 408).This side wall spacers 10 can be silicon nitride (SiN) layer.
Then, shown in Fig. 3 E and Fig. 4 B, form a dielectric layer (step 409) at the upper surface of whole this substrate; Mat photoetching and being etched with is removed this dielectric layer and is positioned at the part that desire forms the bit line contact and forms self-aligned contacts window (step 410) to expose substrate surface then.
Then, shown in Fig. 3 F and Fig. 4 B, then deposit the metal level 14 of a specific thicknesses, with the exposed surface that covers dielectric layer 12, the side wall spacers 10 and the substrate 2 of self-aligned contacts window construction at the upper surface of whole this substrate.By this in self-aligned contacts window 20, so that form a Metal Contact (step 411) between metal level 14 and the substrate 2.
The second embodiment of the present invention is represented by the method shown in the structure shown in Fig. 5 A to Fig. 5 F and Fig. 6 A to Fig. 6 B flow chart.
At first prepare a substrate 2, be one first conductive layer 4, one second conductive layer 6 and an insulating barrier 8 in regular turn on it, first conductive layer 4 can be polysilicon (polysilicon) or amorphous silicon (amorphoussilicon) layer, second conductive layer 6 can be metal silicide layer, as tungsten silicide (WSi), and insulating barrier can be silicon nitride (SiN) layer; Then, as shown in Figure 6A, open grid conductor (GC) mask (step 601); Then be etched to substrate surface to form a plurality of grid structures (step 602).
Then, shown in Fig. 5 A and Fig. 6 A, deposition one photo anti-corrosion agent material layer 22 on whole this substrate, or deposition one anti-reflecting layer (the anti-reflective coating of elder generation, ARC) deposit a photo anti-corrosion agent material layer 22 (step 603) after the (not shown) again, and etch process can be dry-etching.
Then, shown in Fig. 5 B and Fig. 6 A, use photoetching or photoetching and etch process between grid structure, to form circular open (step 604) with bit line contacting window mask (bit-line contact mask).The zone of self-aligned contacts window please refer to shown in Fig. 5 G after the position of these circular opens was.This etch process can be dry-etching; Then use a kind of rate of etch to be higher than etchant (for example, NH to the rate of etch of the insulating barrier 8 and first conductive layer 4 to second conductive layer 6
4OH, H
2O
2And H
2The etchant that O mixes) etching second conductive layer 6 is not sheltered side (step 605) by photo anti-corrosion agent material layer 22, and this etching can be isotropism (isotropic) etching.
Then, shown in Fig. 5 C and Fig. 6 B, remove photo anti-corrosion agent material layer 22 and anti-reflecting layer (if any) (step 606).
Then, shown in Fig. 5 D and Fig. 6 B, form a side wall spacers 10 (step 607) on the sidewall of each self-aligned contacts window construction, this side wall spacers 10 can be silicon nitride (SiN) layer.
Then, shown in Fig. 5 E and Fig. 6 B, form a dielectric layer (step 608) at the upper surface of whole this substrate; Mat photoetching and etch process are removed the part that this dielectric layer is positioned at the contact of desire formation bit line then, form self-aligned contacts window (step 609) to expose substrate surface.
Then, shown in Fig. 5 F and Fig. 6 B, then deposit the metal level 14 of a specific thicknesses, with the exposed surface that covers dielectric layer 12, the side wall spacers 10 and the substrate 2 of self-aligned contacts window construction at the upper surface of whole this substrate.In self-aligned contacts window 20, between metal level 14 and substrate 2, form a Metal Contact (step 610) by this.
Fig. 5 G is depicted as the vertical view of second conductive layer among Fig. 5 F, by the position that also can see circular open in the step 604 among Fig. 5 G.
With prior art United States Patent (USP) the 5th, 989, form different being in of the method for self-aligned contacts for No. 987 the etching step of second conductive layer of each grid conductor is only carried out etching at the side that each grid structure desire forms bit line contact in method of the present invention, it is not etched that second conductive layer is not used to form the opposite side of bit line contact, therefore, can solve conventional method and the prior art United States Patent (USP) the 5th that forms the self-aligned contacts window construction according to method provided by the present invention, 989, form all shortcomings of the method for self-aligned contacts window constructions for No. 987, because: (1) is because the first embodiment step 406 and the second embodiment step 605 can cause bigger contact window to avoid second conductive layer 6 to contact with metal level 14 putting 16 places at the etching of second conductive layer 6 and the conventional method comparison of formation self-aligned contacts window construction; (2) etching second conductive layer 6 only each grid structure desire of etching form a side of bit line contact, for the zone that can not cause grid conductor/bit line contacting window short circuit, second conductive layer 6 can be not etched, because only a lateral section is long-pending diminishes for second conductive layer 6, so the resistance change of grid conductor is less; (3) contact area of second conductive layer 6 and first conductive layer 4 reduces lessly during etching, therefore more can not cause at subsequent technique and peel off phenomenon.
Characteristics of the present invention and technology contents are fully open as above, and those skilled in the art can do various replacement or the modifications that do not deviate from spirit of the present invention according to announcement of the present invention and instruction.Therefore, protection scope of the present invention should not only limit to the disclosed embodiments, and should contain these replacements and modification.
Claims (38)
1. a formation has the method for the grid structure of local etching conductive layer, comprises the following steps:
(1) prepares a Semiconductor substrate, wherein be formed with a plurality of separate gate structures on this substrate, wherein each grid structure comprises one first conductive layer that is formed on this substrate, is formed at one second conductive layer on this first conductive layer and is formed at a insulating barrier on this second conductive layer;
(2) use a mask on this substrate, to form and contain the cover layer of an opening emerges part grid structure at least until substrate surface;
(3) use rate of etch to second conductive layer to be higher than to an etchant of the rate of etch of this insulating barrier and this first conductive layer this second conductive layer with this exposure grid structure of etching;
(4) remove this cover layer; And
(5) on the sidewall of each grid structure, form a side wall spacers.
2. formation as claimed in claim 1 has the method for the grid structure of local etching conductive layer, wherein forms this tectal method and comprise the following steps: in step (2)
(i) deposition one photo anti-corrosion agent material layer on this substrate; And
(ii) carry out a photoetching process.
3. formation as claimed in claim 1 has the method for the grid structure of local etching conductive layer, wherein forms this tectal method and comprise the following steps: in step (2)
(a) deposition one anti-reflecting layer and a photo anti-corrosion agent material layer on this substrate; And
(b) carry out a photoetching and etch process.
4. formation as claimed in claim 1 has the method for the grid structure of local etching conductive layer, and wherein this mask is a bit line contact node mask in step (2).
5. formation as claimed in claim 1 has the method for the grid structure of local etching conductive layer, and wherein this mask is the bit line contacting window mask in step (2).
6. formation as claimed in claim 1 has the method for the grid structure of local etching conductive layer, and wherein this first conductive layer is to be selected from a kind of in polysilicon and the amorphous silicon.
7. formation as claimed in claim 1 has the method for the grid structure of local etching conductive layer, and wherein this second conductive layer is a metal silicide layer.
8. formation as claimed in claim 1 has the method for the grid structure of local etching conductive layer, and wherein step (3) is etched to isotropic etching.
9. formation as claimed in claim 1 has the method for the grid structure of local etching conductive layer, and wherein the etchant of step (3) is NH
4OH, H
2O
2And H
2The O mixture.
10. a formation has the method for the self-aligned contacts window construction of local etching conductive layer, comprises the following steps:
(1) prepares a Semiconductor substrate, wherein be formed with a plurality of separate gate structures on this substrate, wherein each grid structure comprises one first conductive layer that is formed on this substrate, is formed at one second conductive layer on this first conductive layer and is formed at a insulating barrier on this second conductive layer;
(2) use bit line contact node mask to contain the cover layer of an opening emerges part grid structure at least until substrate surface in the side formation that each grid structure desire forms bit line;
(3) use rate of etch to second conductive layer to be higher than this second conductive layer that an etchant of the rate of etch of this insulating barrier and this first conductive layer is used to form the side that bit line contacts with etching this exposure grid structure;
(4) remove this cover layer;
(5) on the sidewall of each grid structure, form a side wall spacers;
(6) form a dielectric layer that covers whole this substrate;
(7) use photoetching and etch process to be exposed out until the surface of substrate, form the self-aligned contacts window by this with the dielectric layer of removing a side that between each grid structure, is used to form the bit line contact; And
(8) metal level of the side wall spacers of the etched surface of formation covering dielectric layer and grid structure, and on the substrate surface that is exposed out between this metal level and this substrate, form self-aligned contacts.
11. formation as claimed in claim 10 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein forms this tectal method and comprise the following steps: in step (2)
(i) deposition one photo anti-corrosion agent material layer on this substrate; And
(ii) carry out a photoetching process.
12. formation as claimed in claim 10 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein forms this tectal method and comprise the following steps: in step (2)
(a) deposition one anti-reflecting layer and a photo anti-corrosion agent material layer on this substrate; And
(b) carry out a photoetching and etch process.
13. formation as claimed in claim 10 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein this first conductive layer is to be selected from a kind of in polysilicon and the amorphous silicon.
14. formation as claimed in claim 10 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein this second conductive layer is a metal silicide layer.
15. formation as claimed in claim 14 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein this metal silicide layer is a tungsten silicide layer.
16. formation as claimed in claim 10 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein this insulating barrier is a silicon nitride layer.
17. formation as claimed in claim 10 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein this side wall spacers is a silicon nitride layer.
18. formation as claimed in claim 10 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein step (3) is etched to isotropic etching.
19. formation as claimed in claim 10 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein the etchant of step (3) is NH
4OH, H
2O
2And H
2The O mixture.
20. a formation has the method for the self-aligned contacts window construction of local etching conductive layer, comprises the following steps:
(1) prepares a Semiconductor substrate, wherein be formed with a plurality of separate gate structures on this substrate, wherein each grid structure comprises one first conductive layer that is formed on this substrate, is formed at one second conductive layer on this first conductive layer and is formed at a insulating barrier on this second conductive layer;
(2) use the bit line contacting window mask to contain the cover layer of a circular open expose portion grid structure until substrate surface at least to form between grid structure, this opening be the zone of self-aligned contacts window afterwards;
(3) use rate of etch to second conductive layer to be higher than to an etchant of the rate of etch of this insulating barrier and this first conductive layer this second conductive layer with this exposure grid structure of etching;
(4) remove this cover layer;
(5) on the sidewall of each grid structure, form a side wall spacers;
(6) form a dielectric layer that covers whole this substrate;
(7) mat photoetching and etch process are exposed out to form the self-aligned contacts window until the surface of substrate with the dielectric layer of removing a side that is used to form the bit line contact between each grid structure; And
(8) metal level of the side wall spacers of the etched surface of formation covering dielectric layer and grid structure, and the substrate surface that is exposed out between this metal level and this substrate forms self-aligned contacts.
21. formation as claimed in claim 20 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein forms this tectal method and comprise the following steps: in step (2)
(i) deposition one photo anti-corrosion agent material layer on this substrate; And
(ii) carry out a photoetching process.
22. formation as claimed in claim 20 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein forms this tectal method and comprise the following steps: in step (2)
(a) deposition one anti-reflecting layer and a photo anti-corrosion agent material layer on this substrate; And
(b) carry out a photoetching and etch process.
23. formation as claimed in claim 20 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein this first conductive layer is to be selected from a kind of in polysilicon and the amorphous silicon.
24. formation as claimed in claim 20 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein this second conductive layer is a metal silicide layer.
25. formation as claimed in claim 24 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein this metal silicide layer is a tungsten silicide layer.
26. formation as claimed in claim 20 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein this insulating barrier is a silicon nitride layer.
27. formation as claimed in claim 20 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein this side wall spacers is a silicon nitride layer.
28. formation as claimed in claim 20 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein step (3) is etched to isotropic etching.
29. formation as claimed in claim 20 has the method for the self-aligned contacts window construction of local etching conductive layer, wherein the etchant of step (3) is NH
4OH, H
2O
2And H
2The O mixture.
30. the grid structure with local etching conductive layer comprises:
(1) semi-conductive substrate;
(2) one first conductive layers, it is formed on this substrate;
(3) one second conductive layers, it is formed on this first conductive layer; And
(4) one insulating barriers, it is formed on this second conductive layer,
Wherein this second conductive layer only has a side by local etching, thereby the etched portion of this second conductive layer is recessed with respect to the edge of this insulating barrier, and a self-aligned contacts window will form in this side.
31. the grid structure with local etching conductive layer as claimed in claim 30, wherein this first conductive layer is to be selected from a kind of in polysilicon and the amorphous silicon.
32. the grid structure with local etching conductive layer as claimed in claim 30, wherein this second conductive layer is a metal silicide layer.
33. the self-aligned contacts window construction with local etching conductive layer comprises:
(1) semi-conductive substrate;
(2) a plurality of separate gate structures that are formed on this substrate, wherein each grid structure comprises:
(a) one first conductive layer that on the surface of this substrate, deposits;
(b) one second conductive layer that on the surface of this first conductive layer, deposits; And
(c) insulating barrier that on the surface of this second conductive layer, deposits, wherein this second conductive layer only has a side by local etching, thus the etched portion of this second conductive layer is recessed with respect to the edge of this insulating barrier, and a self-aligned contacts window will form in this side;
(3) one side wall spacers, it is formed on the sidewall of each grid structure;
(4) one dielectric layers, it covers the side that each those grid structures are not used to form the self-aligned contacts window construction; And
(5) one metal levels, it covers those side wall spacers and this substrate of this dielectric layer, each those grid structures, and wherein this metal level does not contact with this second conductive layer.
34. the self-aligned contacts window construction with local etching conductive layer as claimed in claim 33, wherein this first conductive layer is to be selected from a kind of in polysilicon and the amorphous silicon.
35. the self-aligned contacts window construction with local etching conductive layer as claimed in claim 33, wherein this second conductive layer is a metal silicide layer.
36. the self-aligned contacts window construction with local etching conductive layer as claimed in claim 35, wherein this metal silicide layer is a tungsten silicide layer.
37. the self-aligned contacts window construction with local etching conductive layer as claimed in claim 33, wherein this insulating barrier is a silicon nitride layer.
38. the self-aligned contacts window construction with local etching conductive layer as claimed in claim 33, wherein this side wall spacers is a silicon nitride layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02151352 CN1290158C (en) | 2002-11-18 | 2002-11-18 | Method for forming self-aligning contact window structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02151352 CN1290158C (en) | 2002-11-18 | 2002-11-18 | Method for forming self-aligning contact window structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1501447A CN1501447A (en) | 2004-06-02 |
| CN1290158C true CN1290158C (en) | 2006-12-13 |
Family
ID=34234386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02151352 Expired - Lifetime CN1290158C (en) | 2002-11-18 | 2002-11-18 | Method for forming self-aligning contact window structure |
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| Country | Link |
|---|---|
| CN (1) | CN1290158C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI250558B (en) * | 2003-10-23 | 2006-03-01 | Hynix Semiconductor Inc | Method for fabricating semiconductor device with fine patterns |
| CN102458042B (en) * | 2010-10-27 | 2013-11-13 | 光明电子股份有限公司 | Circuit substrate manufacturing process, circuit substrate and semiconductor manufacturing process |
| CN104465664A (en) * | 2014-12-30 | 2015-03-25 | 上海华虹宏力半导体制造有限公司 | Split-gate flash memory and manufacturing method thereof |
-
2002
- 2002-11-18 CN CN 02151352 patent/CN1290158C/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| CN1501447A (en) | 2004-06-02 |
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