JP2000323483A5 - - Google Patents

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Publication number
JP2000323483A5
JP2000323483A5 JP1999258864A JP25886499A JP2000323483A5 JP 2000323483 A5 JP2000323483 A5 JP 2000323483A5 JP 1999258864 A JP1999258864 A JP 1999258864A JP 25886499 A JP25886499 A JP 25886499A JP 2000323483 A5 JP2000323483 A5 JP 2000323483A5
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JP
Japan
Prior art keywords
hard mask
layer
metal coating
etching
metal
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP1999258864A
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English (en)
Japanese (ja)
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JP4690512B2 (ja
JP2000323483A (ja
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Publication date
Priority claimed from US09/153,390 external-priority patent/US6177353B1/en
Application filed filed Critical
Publication of JP2000323483A publication Critical patent/JP2000323483A/ja
Publication of JP2000323483A5 publication Critical patent/JP2000323483A5/ja
Application granted granted Critical
Publication of JP4690512B2 publication Critical patent/JP4690512B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP25886499A 1998-09-15 1999-09-13 エッチングした垂直金属線上のポリマー沈積、エッチングした金属線の腐食およびエッチングした金属フィーチャの湿式洗浄時における腐食を減少させる方法 Expired - Fee Related JP4690512B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/153390 1998-09-15
US09/153,390 US6177353B1 (en) 1998-09-15 1998-09-15 Metallization etching techniques for reducing post-etch corrosion of metal lines

Publications (3)

Publication Number Publication Date
JP2000323483A JP2000323483A (ja) 2000-11-24
JP2000323483A5 true JP2000323483A5 (enExample) 2007-05-24
JP4690512B2 JP4690512B2 (ja) 2011-06-01

Family

ID=22547020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25886499A Expired - Fee Related JP4690512B2 (ja) 1998-09-15 1999-09-13 エッチングした垂直金属線上のポリマー沈積、エッチングした金属線の腐食およびエッチングした金属フィーチャの湿式洗浄時における腐食を減少させる方法

Country Status (7)

Country Link
US (1) US6177353B1 (enExample)
EP (1) EP0987745B1 (enExample)
JP (1) JP4690512B2 (enExample)
KR (1) KR100676995B1 (enExample)
CN (1) CN1146967C (enExample)
DE (1) DE69935100T2 (enExample)
TW (1) TW457583B (enExample)

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US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
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US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
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US9984858B2 (en) 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
US10229837B2 (en) 2016-02-04 2019-03-12 Lam Research Corporation Control of directionality in atomic layer etching
US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
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JP6785101B2 (ja) * 2016-09-09 2020-11-18 東京エレクトロン株式会社 プラズマエッチング方法
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CN114156178A (zh) * 2020-09-04 2022-03-08 中芯集成电路（宁波）有限公司 半导体结构的形成方法
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