CN100517605C - 镶嵌结构的制造方法 - Google Patents
镶嵌结构的制造方法 Download PDFInfo
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- CN100517605C CN100517605C CNB2006101473239A CN200610147323A CN100517605C CN 100517605 C CN100517605 C CN 100517605C CN B2006101473239 A CNB2006101473239 A CN B2006101473239A CN 200610147323 A CN200610147323 A CN 200610147323A CN 100517605 C CN100517605 C CN 100517605C
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- dielectric layer
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- oxygen gas
- gas plasma
- manufacture method
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- Cleaning Or Drying Semiconductors (AREA)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2006101473239A CN100517605C (zh) | 2006-12-15 | 2006-12-15 | 镶嵌结构的制造方法 |
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CNB2006101473239A CN100517605C (zh) | 2006-12-15 | 2006-12-15 | 镶嵌结构的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101202231A CN101202231A (zh) | 2008-06-18 |
CN100517605C true CN100517605C (zh) | 2009-07-22 |
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CNB2006101473239A Expired - Fee Related CN100517605C (zh) | 2006-12-15 | 2006-12-15 | 镶嵌结构的制造方法 |
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Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101764059B (zh) * | 2008-12-25 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | 双镶嵌结构的形成方法及沟槽形成方法 |
CN101762993B (zh) * | 2008-12-25 | 2012-01-25 | 中芯国际集成电路制造(上海)有限公司 | 光刻胶的去除方法及连接孔的制造方法 |
CN101930179B (zh) * | 2009-06-19 | 2012-08-22 | 中芯国际集成电路制造(上海)有限公司 | 钝化光刻胶表面的方法以及光刻方法 |
CN102024669B (zh) * | 2009-09-09 | 2012-07-25 | 中芯国际集成电路制造(上海)有限公司 | 减小等离子体刻蚀中的反射功率的方法 |
CN102024697A (zh) * | 2009-09-17 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | 低介电常数材料刻蚀的方法 |
CN102436154A (zh) * | 2011-12-21 | 2012-05-02 | 信利半导体有限公司 | 一种tft液晶显示器返修制程中的光刻胶剥离方法 |
CN102610496B (zh) * | 2012-03-31 | 2017-11-07 | 上海集成电路研发中心有限公司 | 大高宽比结构的去胶方法 |
CN104851779B (zh) * | 2014-02-18 | 2017-11-14 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN105093816B (zh) * | 2015-09-23 | 2019-08-02 | 武汉华星光电技术有限公司 | 一种显示面板的信号线的制程方法及显示面板 |
CN106683983B (zh) * | 2017-01-12 | 2019-07-02 | 福建中科晶创光电科技有限公司 | 一种去除刻蚀后基片表面光刻胶的方法及实施装置 |
CN109216540A (zh) * | 2017-06-30 | 2019-01-15 | 中电海康集团有限公司 | Mtj器件与其制作方法 |
CN107564803B (zh) * | 2017-08-31 | 2020-04-17 | 京东方科技集团股份有限公司 | 刻蚀方法、工艺设备、薄膜晶体管器件及其制造方法 |
CN113690178A (zh) * | 2021-08-23 | 2021-11-23 | 长江先进存储产业创新中心有限责任公司 | 金属导电结构的制造方法 |
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2006
- 2006-12-15 CN CNB2006101473239A patent/CN100517605C/zh not_active Expired - Fee Related
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CN101202231A (zh) | 2008-06-18 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
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Effective date of registration: 20111118 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090722 Termination date: 20181215 |