JP2011504299A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011504299A5 JP2011504299A5 JP2010534950A JP2010534950A JP2011504299A5 JP 2011504299 A5 JP2011504299 A5 JP 2011504299A5 JP 2010534950 A JP2010534950 A JP 2010534950A JP 2010534950 A JP2010534950 A JP 2010534950A JP 2011504299 A5 JP2011504299 A5 JP 2011504299A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- copper
- thin film
- bevel edge
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 48
- 239000010949 copper Substances 0.000 claims description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 36
- 229910052802 copper Inorganic materials 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 29
- 239000005749 Copper compound Substances 0.000 claims description 22
- 150000001880 copper compounds Chemical class 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 19
- 239000012530 fluid Substances 0.000 claims description 11
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 7
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims 22
- 239000000460 chlorine Substances 0.000 claims 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 2
- 229910017604 nitric acid Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 238000005530 etching Methods 0.000 description 4
- -1 CuO E Chemical class 0.000 description 3
- 239000010408 film Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98950507P | 2007-11-21 | 2007-11-21 | |
| US60/989,505 | 2007-11-21 | ||
| PCT/US2008/012842 WO2009070216A1 (en) | 2007-11-21 | 2008-11-13 | Bevel plasma treatment to enhance wet edge clean |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011504299A JP2011504299A (ja) | 2011-02-03 |
| JP2011504299A5 true JP2011504299A5 (enExample) | 2012-01-12 |
| JP5184644B2 JP5184644B2 (ja) | 2013-04-17 |
Family
ID=40678889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010534950A Active JP5184644B2 (ja) | 2007-11-21 | 2008-11-13 | 湿式エッジ洗浄を強化するためのベベルプラズマ処理 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP5184644B2 (enExample) |
| KR (1) | KR101532456B1 (enExample) |
| CN (1) | CN101868849B (enExample) |
| SG (1) | SG186015A1 (enExample) |
| TW (1) | TWI398914B (enExample) |
| WO (1) | WO2009070216A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101764087B (zh) * | 2010-01-21 | 2013-04-10 | 复旦大学 | 一种铜与低介电常数材料集成的方法 |
| KR101458799B1 (ko) * | 2013-10-11 | 2014-11-07 | 조인셋 주식회사 | 연성 금속 적층필름 및 그 제조방법 |
| US9748140B1 (en) * | 2016-05-13 | 2017-08-29 | Infineon Technologies Ag | Method of manufacturing semiconductor devices |
| CN113950732A (zh) * | 2019-05-15 | 2022-01-18 | 应用材料公司 | 用于基板处理的斜面剥离及缺陷解决方案 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6537416B1 (en) * | 1999-10-01 | 2003-03-25 | Novellus Systems, Inc. | Wafer chuck for use in edge bevel removal of copper from silicon wafers |
| US6333275B1 (en) * | 1999-10-01 | 2001-12-25 | Novellus Systems, Inc. | Etchant mixing system for edge bevel removal of copper from silicon wafers |
| JP3953265B2 (ja) * | 1999-10-06 | 2007-08-08 | 株式会社荏原製作所 | 基板洗浄方法及びその装置 |
| US6589882B2 (en) * | 2001-10-24 | 2003-07-08 | Micron Technology, Inc. | Copper post-etch cleaning process |
| US7540935B2 (en) * | 2003-03-14 | 2009-06-02 | Lam Research Corporation | Plasma oxidation and removal of oxidized material |
| CN100397589C (zh) * | 2003-05-12 | 2008-06-25 | 索绍株式会社 | 等离子腐蚀室及使用其的等离子腐蚀系统 |
| US7323080B2 (en) * | 2004-05-04 | 2008-01-29 | Semes Co., Ltd. | Apparatus for treating substrate |
| WO2006060752A2 (en) * | 2004-12-03 | 2006-06-08 | Solid State Equipment Corporation | Wet etching of the edge and bevel of a silicon wafer |
| US7256148B2 (en) * | 2005-05-12 | 2007-08-14 | International Business Machines Corporation | Method for treating a wafer edge |
| US7909960B2 (en) * | 2005-09-27 | 2011-03-22 | Lam Research Corporation | Apparatus and methods to remove films on bevel edge and backside of wafer |
-
2008
- 2008-11-13 WO PCT/US2008/012842 patent/WO2009070216A1/en not_active Ceased
- 2008-11-13 JP JP2010534950A patent/JP5184644B2/ja active Active
- 2008-11-13 KR KR1020107013634A patent/KR101532456B1/ko active Active
- 2008-11-13 CN CN2008801176494A patent/CN101868849B/zh active Active
- 2008-11-13 SG SG2012085171A patent/SG186015A1/en unknown
- 2008-11-21 TW TW97145168A patent/TWI398914B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8759214B2 (en) | Method of etching a semiconductor wafer | |
| JPH0758079A (ja) | キセノンを用いたプラズマエッチング | |
| WO2009057764A1 (ja) | エッチング方法およびそれを用いた光／電子デバイスの製造方法 | |
| JP5712653B2 (ja) | プラズマエッチング方法 | |
| TW200402791A (en) | Method for removing photoresist and etch residues | |
| JP2007184571A (ja) | 炭化珪素半導体装置、炭化珪素半導体装置の製造方法、炭化珪素半導体装置中の遷移金属シリサイドと金属膜との接合体及び炭化珪素半導体装置中の遷移金属シリサイドと金属膜との接合体の製造方法 | |
| WO2008005630B1 (en) | Methods for minimizing mask undercuts and notches for plasma processing system | |
| JP2009530861A5 (enExample) | ||
| CN107039345B (zh) | 元件芯片的制造方法以及元件芯片 | |
| TWI461378B (zh) | 具波浪形表面之玻璃基板的製造方法 | |
| TWI654651B (zh) | 半導體基板之蝕刻方法 | |
| JP2011504299A5 (enExample) | ||
| JP5167052B2 (ja) | ドライエッチング方法 | |
| CN104241131B (zh) | 金属栅极晶体管的形成方法 | |
| JP6444805B2 (ja) | 半導体チップの製造方法 | |
| CN107170679A (zh) | 一种导电图形的制作方法、导电图形及显示基板 | |
| JP5184644B2 (ja) | 湿式エッジ洗浄を強化するためのベベルプラズマ処理 | |
| JP4774006B2 (ja) | エッチング方法 | |
| MY149338A (en) | Notch stop pulsing process for plasma processing system | |
| KR20130063089A (ko) | 반도체 소자의 트렌치 형성 방법 | |
| CN110690112B (zh) | 利用反向间距加倍工艺形成表面平坦化结构及方法 | |
| KR20160125588A (ko) | 반도체 구조 및 이의 제조 방법 | |
| CN103000495B (zh) | 一种基板制备方法 | |
| US7479235B2 (en) | Method for etching a workpiece | |
| JP2004207715A5 (enExample) |