CN101868849B - 为增强湿法边缘清洁而进行斜面等离子体加工 - Google Patents

为增强湿法边缘清洁而进行斜面等离子体加工 Download PDF

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Publication number
CN101868849B
CN101868849B CN2008801176494A CN200880117649A CN101868849B CN 101868849 B CN101868849 B CN 101868849B CN 2008801176494 A CN2008801176494 A CN 2008801176494A CN 200880117649 A CN200880117649 A CN 200880117649A CN 101868849 B CN101868849 B CN 101868849B
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China
Prior art keywords
copper
substrate
edge
bevel edge
plasma
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CN2008801176494A
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English (en)
Chinese (zh)
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CN101868849A (zh
Inventor
安德鲁·D·贝利三世
金允尚
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2008801176494A 2007-11-21 2008-11-13 为增强湿法边缘清洁而进行斜面等离子体加工 Active CN101868849B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US98950507P 2007-11-21 2007-11-21
US60/989,505 2007-11-21
PCT/US2008/012842 WO2009070216A1 (en) 2007-11-21 2008-11-13 Bevel plasma treatment to enhance wet edge clean

Publications (2)

Publication Number Publication Date
CN101868849A CN101868849A (zh) 2010-10-20
CN101868849B true CN101868849B (zh) 2012-03-07

Family

ID=40678889

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801176494A Active CN101868849B (zh) 2007-11-21 2008-11-13 为增强湿法边缘清洁而进行斜面等离子体加工

Country Status (6)

Country Link
JP (1) JP5184644B2 (enExample)
KR (1) KR101532456B1 (enExample)
CN (1) CN101868849B (enExample)
SG (1) SG186015A1 (enExample)
TW (1) TWI398914B (enExample)
WO (1) WO2009070216A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101764087B (zh) * 2010-01-21 2013-04-10 复旦大学 一种铜与低介电常数材料集成的方法
KR101458799B1 (ko) * 2013-10-11 2014-11-07 조인셋 주식회사 연성 금속 적층필름 및 그 제조방법
US9748140B1 (en) * 2016-05-13 2017-08-29 Infineon Technologies Ag Method of manufacturing semiconductor devices
KR102880305B1 (ko) * 2019-05-15 2025-10-31 어플라이드 머티어리얼스, 인코포레이티드 기판 프로세싱을 위한 베벨 박리 및 결함 해결

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333275B1 (en) * 1999-10-01 2001-12-25 Novellus Systems, Inc. Etchant mixing system for edge bevel removal of copper from silicon wafers

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6537416B1 (en) * 1999-10-01 2003-03-25 Novellus Systems, Inc. Wafer chuck for use in edge bevel removal of copper from silicon wafers
JP3953265B2 (ja) * 1999-10-06 2007-08-08 株式会社荏原製作所 基板洗浄方法及びその装置
US6589882B2 (en) * 2001-10-24 2003-07-08 Micron Technology, Inc. Copper post-etch cleaning process
US7540935B2 (en) * 2003-03-14 2009-06-02 Lam Research Corporation Plasma oxidation and removal of oxidized material
JP4122004B2 (ja) * 2003-05-12 2008-07-23 株式会社ソスル プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステ厶
US7323080B2 (en) * 2004-05-04 2008-01-29 Semes Co., Ltd. Apparatus for treating substrate
US20060172538A1 (en) * 2004-12-03 2006-08-03 Herman Itzkowitz Wet etching the edge and bevel of a silicon wafer
US7256148B2 (en) * 2005-05-12 2007-08-14 International Business Machines Corporation Method for treating a wafer edge
US7909960B2 (en) * 2005-09-27 2011-03-22 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333275B1 (en) * 1999-10-01 2001-12-25 Novellus Systems, Inc. Etchant mixing system for edge bevel removal of copper from silicon wafers

Also Published As

Publication number Publication date
KR20100108345A (ko) 2010-10-06
CN101868849A (zh) 2010-10-20
KR101532456B1 (ko) 2015-06-29
TW200943404A (en) 2009-10-16
JP5184644B2 (ja) 2013-04-17
JP2011504299A (ja) 2011-02-03
SG186015A1 (en) 2012-12-28
WO2009070216A1 (en) 2009-06-04
TWI398914B (zh) 2013-06-11

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