SG186015A1 - Bevel plasma treatment to enhance wet edge clean - Google Patents

Bevel plasma treatment to enhance wet edge clean Download PDF

Info

Publication number
SG186015A1
SG186015A1 SG2012085171A SG2012085171A SG186015A1 SG 186015 A1 SG186015 A1 SG 186015A1 SG 2012085171 A SG2012085171 A SG 2012085171A SG 2012085171 A SG2012085171 A SG 2012085171A SG 186015 A1 SG186015 A1 SG 186015A1
Authority
SG
Singapore
Prior art keywords
substrate
copper
bevel edge
edge
plasma
Prior art date
Application number
SG2012085171A
Other languages
English (en)
Inventor
Iii Andrew D Bailey
Yunsang Kim
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG186015A1 publication Critical patent/SG186015A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
SG2012085171A 2007-11-21 2008-11-13 Bevel plasma treatment to enhance wet edge clean SG186015A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US98950507P 2007-11-21 2007-11-21

Publications (1)

Publication Number Publication Date
SG186015A1 true SG186015A1 (en) 2012-12-28

Family

ID=40678889

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2012085171A SG186015A1 (en) 2007-11-21 2008-11-13 Bevel plasma treatment to enhance wet edge clean

Country Status (6)

Country Link
JP (1) JP5184644B2 (enExample)
KR (1) KR101532456B1 (enExample)
CN (1) CN101868849B (enExample)
SG (1) SG186015A1 (enExample)
TW (1) TWI398914B (enExample)
WO (1) WO2009070216A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101764087B (zh) * 2010-01-21 2013-04-10 复旦大学 一种铜与低介电常数材料集成的方法
KR101458799B1 (ko) * 2013-10-11 2014-11-07 조인셋 주식회사 연성 금속 적층필름 및 그 제조방법
US9748140B1 (en) * 2016-05-13 2017-08-29 Infineon Technologies Ag Method of manufacturing semiconductor devices
SG11202112599SA (en) * 2019-05-15 2021-12-30 Applied Materials Inc Bevel peeling and defectivity solution for substrate processing

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6537416B1 (en) * 1999-10-01 2003-03-25 Novellus Systems, Inc. Wafer chuck for use in edge bevel removal of copper from silicon wafers
US6333275B1 (en) * 1999-10-01 2001-12-25 Novellus Systems, Inc. Etchant mixing system for edge bevel removal of copper from silicon wafers
JP3953265B2 (ja) * 1999-10-06 2007-08-08 株式会社荏原製作所 基板洗浄方法及びその装置
US6589882B2 (en) * 2001-10-24 2003-07-08 Micron Technology, Inc. Copper post-etch cleaning process
US7540935B2 (en) * 2003-03-14 2009-06-02 Lam Research Corporation Plasma oxidation and removal of oxidized material
AU2003284723A1 (en) * 2003-05-12 2004-11-26 Sosul Co., Ltd. Plasma etching chamber and plasma etching system using same
US7323080B2 (en) * 2004-05-04 2008-01-29 Semes Co., Ltd. Apparatus for treating substrate
WO2006060752A2 (en) * 2004-12-03 2006-06-08 Solid State Equipment Corporation Wet etching of the edge and bevel of a silicon wafer
US7256148B2 (en) * 2005-05-12 2007-08-14 International Business Machines Corporation Method for treating a wafer edge
US7909960B2 (en) * 2005-09-27 2011-03-22 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer

Also Published As

Publication number Publication date
WO2009070216A1 (en) 2009-06-04
TW200943404A (en) 2009-10-16
KR20100108345A (ko) 2010-10-06
KR101532456B1 (ko) 2015-06-29
JP2011504299A (ja) 2011-02-03
TWI398914B (zh) 2013-06-11
CN101868849B (zh) 2012-03-07
CN101868849A (zh) 2010-10-20
JP5184644B2 (ja) 2013-04-17

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