KR101532456B1 - 습식 에지 세정을 향상시키는 베벨 플라즈마 처리 - Google Patents

습식 에지 세정을 향상시키는 베벨 플라즈마 처리 Download PDF

Info

Publication number
KR101532456B1
KR101532456B1 KR1020107013634A KR20107013634A KR101532456B1 KR 101532456 B1 KR101532456 B1 KR 101532456B1 KR 1020107013634 A KR1020107013634 A KR 1020107013634A KR 20107013634 A KR20107013634 A KR 20107013634A KR 101532456 B1 KR101532456 B1 KR 101532456B1
Authority
KR
South Korea
Prior art keywords
copper
substrate
edge
beveled edge
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020107013634A
Other languages
English (en)
Korean (ko)
Other versions
KR20100108345A (ko
Inventor
3세 앤드류 디 베일리
윤상 김
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20100108345A publication Critical patent/KR20100108345A/ko
Application granted granted Critical
Publication of KR101532456B1 publication Critical patent/KR101532456B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020107013634A 2007-11-21 2008-11-13 습식 에지 세정을 향상시키는 베벨 플라즈마 처리 Active KR101532456B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US98950507P 2007-11-21 2007-11-21
US60/989,505 2007-11-21
PCT/US2008/012842 WO2009070216A1 (en) 2007-11-21 2008-11-13 Bevel plasma treatment to enhance wet edge clean

Publications (2)

Publication Number Publication Date
KR20100108345A KR20100108345A (ko) 2010-10-06
KR101532456B1 true KR101532456B1 (ko) 2015-06-29

Family

ID=40678889

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107013634A Active KR101532456B1 (ko) 2007-11-21 2008-11-13 습식 에지 세정을 향상시키는 베벨 플라즈마 처리

Country Status (6)

Country Link
JP (1) JP5184644B2 (enExample)
KR (1) KR101532456B1 (enExample)
CN (1) CN101868849B (enExample)
SG (1) SG186015A1 (enExample)
TW (1) TWI398914B (enExample)
WO (1) WO2009070216A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020231612A1 (en) * 2019-05-15 2020-11-19 Applied Materials, Inc. Bevel peeling and defectivity solution for substrate processing

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101764087B (zh) * 2010-01-21 2013-04-10 复旦大学 一种铜与低介电常数材料集成的方法
KR101458799B1 (ko) * 2013-10-11 2014-11-07 조인셋 주식회사 연성 금속 적층필름 및 그 제조방법
US9748140B1 (en) * 2016-05-13 2017-08-29 Infineon Technologies Ag Method of manufacturing semiconductor devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333275B1 (en) * 1999-10-01 2001-12-25 Novellus Systems, Inc. Etchant mixing system for edge bevel removal of copper from silicon wafers
US20060128152A1 (en) * 2003-03-14 2006-06-15 Lam Research Corporation Plasma oxidation and removal of oxidized material

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6537416B1 (en) * 1999-10-01 2003-03-25 Novellus Systems, Inc. Wafer chuck for use in edge bevel removal of copper from silicon wafers
JP3953265B2 (ja) * 1999-10-06 2007-08-08 株式会社荏原製作所 基板洗浄方法及びその装置
US6589882B2 (en) * 2001-10-24 2003-07-08 Micron Technology, Inc. Copper post-etch cleaning process
CN100397589C (zh) * 2003-05-12 2008-06-25 索绍株式会社 等离子腐蚀室及使用其的等离子腐蚀系统
US7323080B2 (en) * 2004-05-04 2008-01-29 Semes Co., Ltd. Apparatus for treating substrate
WO2006060752A2 (en) * 2004-12-03 2006-06-08 Solid State Equipment Corporation Wet etching of the edge and bevel of a silicon wafer
US7256148B2 (en) * 2005-05-12 2007-08-14 International Business Machines Corporation Method for treating a wafer edge
US7909960B2 (en) * 2005-09-27 2011-03-22 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333275B1 (en) * 1999-10-01 2001-12-25 Novellus Systems, Inc. Etchant mixing system for edge bevel removal of copper from silicon wafers
US20060128152A1 (en) * 2003-03-14 2006-06-15 Lam Research Corporation Plasma oxidation and removal of oxidized material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020231612A1 (en) * 2019-05-15 2020-11-19 Applied Materials, Inc. Bevel peeling and defectivity solution for substrate processing

Also Published As

Publication number Publication date
SG186015A1 (en) 2012-12-28
WO2009070216A1 (en) 2009-06-04
JP2011504299A (ja) 2011-02-03
KR20100108345A (ko) 2010-10-06
JP5184644B2 (ja) 2013-04-17
CN101868849B (zh) 2012-03-07
CN101868849A (zh) 2010-10-20
TWI398914B (zh) 2013-06-11
TW200943404A (en) 2009-10-16

Similar Documents

Publication Publication Date Title
KR100661194B1 (ko) 플라즈마 처리에 의한 기판으로부터의 산화물 또는 다른 환원가능한 오염물의 제거 방법
US10049891B1 (en) Selective in situ cobalt residue removal
US10770346B2 (en) Selective cobalt removal for bottom up gapfill
US6946401B2 (en) Plasma treatment for copper oxide reduction
US6949450B2 (en) Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
US7186648B1 (en) Barrier first method for single damascene trench applications
TW511135B (en) Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
JP2000174026A (ja) 半導体フィ―チャの低温銅リフロ―を改善する構造と方法
US8414790B2 (en) Bevel plasma treatment to enhance wet edge clean
KR101532456B1 (ko) 습식 에지 세정을 향상시키는 베벨 플라즈마 처리
TWI804054B (zh) 用於移除含鎢膜的系統及方法
EP2863416B1 (en) Method for etching copper layer
US10256112B1 (en) Selective tungsten removal
CN117894748A (zh) 一种半导体结构及半导体工艺方法
JP3780204B2 (ja) バリアメタル膜又は密着層形成方法及び配線形成方法
KR20070042887A (ko) 피쳐 제한부들을 형성하는 방법

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20100618

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20131113

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20141208

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20150326

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20150623

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20150623

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20180612

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20180612

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20190613

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20190613

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20220614

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20240605

Start annual number: 10

End annual number: 10