JP2009530861A5 - - Google Patents

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Publication number
JP2009530861A5
JP2009530861A5 JP2009501524A JP2009501524A JP2009530861A5 JP 2009530861 A5 JP2009530861 A5 JP 2009530861A5 JP 2009501524 A JP2009501524 A JP 2009501524A JP 2009501524 A JP2009501524 A JP 2009501524A JP 2009530861 A5 JP2009530861 A5 JP 2009530861A5
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JP
Japan
Prior art keywords
chamber
plasma
workpiece
coupling
photoresist mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009501524A
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English (en)
Japanese (ja)
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JP2009530861A (ja
JP4825911B2 (ja
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Publication date
Priority claimed from US11/388,363 external-priority patent/US7244313B1/en
Application filed filed Critical
Publication of JP2009530861A publication Critical patent/JP2009530861A/ja
Publication of JP2009530861A5 publication Critical patent/JP2009530861A5/ja
Application granted granted Critical
Publication of JP4825911B2 publication Critical patent/JP4825911B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009501524A 2006-03-24 2007-03-19 介在チャンバでの脱フッ素化及びウェハ脱フッ素化ステップによるプラズマエッチング及びフォトレジストストリッププロセス Expired - Fee Related JP4825911B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/388,363 US7244313B1 (en) 2006-03-24 2006-03-24 Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination steps
US11/388,363 2006-03-24
PCT/US2007/006955 WO2007111893A2 (en) 2006-03-24 2007-03-19 Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination steps

Publications (3)

Publication Number Publication Date
JP2009530861A JP2009530861A (ja) 2009-08-27
JP2009530861A5 true JP2009530861A5 (enExample) 2011-08-11
JP4825911B2 JP4825911B2 (ja) 2011-11-30

Family

ID=38235554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009501524A Expired - Fee Related JP4825911B2 (ja) 2006-03-24 2007-03-19 介在チャンバでの脱フッ素化及びウェハ脱フッ素化ステップによるプラズマエッチング及びフォトレジストストリッププロセス

Country Status (6)

Country Link
US (1) US7244313B1 (enExample)
EP (1) EP1999784A4 (enExample)
JP (1) JP4825911B2 (enExample)
KR (1) KR101032831B1 (enExample)
CN (1) CN101448580B (enExample)
WO (1) WO2007111893A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7510976B2 (en) * 2006-04-21 2009-03-31 Applied Materials, Inc. Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity
CN102097360B (zh) * 2009-12-10 2016-08-03 中芯国际集成电路制造(上海)有限公司 刻蚀连接孔的方法
CN102125921B (zh) * 2010-01-20 2012-09-05 常州瑞择微电子科技有限公司 一种光掩模在清洗过程中的传输方法
JP5600447B2 (ja) * 2010-03-05 2014-10-01 株式会社日立ハイテクノロジーズ プラズマエッチング方法
US9318341B2 (en) 2010-12-20 2016-04-19 Applied Materials, Inc. Methods for etching a substrate
US9190316B2 (en) * 2011-10-26 2015-11-17 Globalfoundries U.S. 2 Llc Low energy etch process for nitrogen-containing dielectric layer
CN104882389B (zh) * 2014-02-28 2017-12-26 无锡华润上华科技有限公司 一种半导体器件量测方法
CN105152795B (zh) * 2015-10-23 2018-11-06 武汉工程大学 共混改性二氧化硅乳液包膜磷酸二铵缓释复合肥及其制备方法
CN106356415B (zh) * 2016-12-02 2018-06-29 武汉新芯集成电路制造有限公司 背面金属格栅的制作方法
WO2019028120A1 (en) * 2017-08-01 2019-02-07 Applied Materials, Inc. METHODS OF POST-PROCESSING METAL OXIDE
US10872761B2 (en) * 2018-06-25 2020-12-22 Mattson Technology Inc. Post etch defluorination process
CN113031409B (zh) * 2021-03-03 2024-12-31 苏州子山半导体科技有限公司 一种氧化钒热成像芯片制造中的聚酰亚胺光刻胶去除方法
JPWO2024203220A1 (enExample) * 2023-03-24 2024-10-03

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051505A (en) 1998-03-05 2000-04-18 Taiwan Semiconductor Manufacturing Company Plasma etch method for forming metal-fluoropolymer residue free vias through silicon containing dielectric layers
US6548230B1 (en) * 1998-09-18 2003-04-15 Taiwan Semiconductor Manufacturing Co., Ltd Method for in-situ removal of photoresist and sidewall polymer
US6468599B1 (en) * 1998-12-25 2002-10-22 International Business Machines Corporation Method for removing organic compound by ultraviolet radiation
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US6440864B1 (en) * 2000-06-30 2002-08-27 Applied Materials Inc. Substrate cleaning process
JP3921364B2 (ja) * 2001-08-21 2007-05-30 松下電器産業株式会社 半導体装置の製造方法
JP5038567B2 (ja) * 2001-09-26 2012-10-03 東京エレクトロン株式会社 エッチング方法
JP4326746B2 (ja) * 2002-01-07 2009-09-09 東京エレクトロン株式会社 プラズマ処理方法
US6806038B2 (en) * 2002-07-08 2004-10-19 Lsi Logic Corporation Plasma passivation
JP2004071774A (ja) * 2002-08-05 2004-03-04 Tokyo Electron Ltd マルチチャンバシステムを用いたプラズマ処理方法
US20050101135A1 (en) * 2003-11-12 2005-05-12 Lam Research Corporation Minimizing the loss of barrier materials during photoresist stripping
US7638440B2 (en) 2004-03-12 2009-12-29 Applied Materials, Inc. Method of depositing an amorphous carbon film for etch hardmask application
US8349128B2 (en) * 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
KR100704470B1 (ko) 2004-07-29 2007-04-10 주식회사 하이닉스반도체 비결정성 탄소막을 희생 하드마스크로 이용하는반도체소자 제조 방법
KR100632473B1 (ko) * 2004-08-03 2006-10-09 삼성전자주식회사 염기성 물질 확산 장벽막을 사용하는 미세 전자 소자의듀얼 다마신 배선의 제조 방법
US7288488B2 (en) * 2005-05-10 2007-10-30 Lam Research Corporation Method for resist strip in presence of regular low k and/or porous low k dielectric materials
US8404594B2 (en) 2005-05-27 2013-03-26 Freescale Semiconductor, Inc. Reverse ALD

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