CN101448580B - 具有室去氟化和晶片去氟化中间步骤的等离子体蚀刻和光刻胶剥离工艺 - Google Patents

具有室去氟化和晶片去氟化中间步骤的等离子体蚀刻和光刻胶剥离工艺 Download PDF

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Publication number
CN101448580B
CN101448580B CN2007800102874A CN200780010287A CN101448580B CN 101448580 B CN101448580 B CN 101448580B CN 2007800102874 A CN2007800102874 A CN 2007800102874A CN 200780010287 A CN200780010287 A CN 200780010287A CN 101448580 B CN101448580 B CN 101448580B
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chamber
plasma
technology
coupled
photoresist
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CN2007800102874A
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Chinese (zh)
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CN101448580A (zh
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逸风·周
格拉多·A·戴戈迪诺
斯昌林
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2007800102874A 2006-03-24 2007-03-19 具有室去氟化和晶片去氟化中间步骤的等离子体蚀刻和光刻胶剥离工艺 Expired - Fee Related CN101448580B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/388,363 US7244313B1 (en) 2006-03-24 2006-03-24 Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination steps
US11/388,363 2006-03-24
PCT/US2007/006955 WO2007111893A2 (en) 2006-03-24 2007-03-19 Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination steps

Publications (2)

Publication Number Publication Date
CN101448580A CN101448580A (zh) 2009-06-03
CN101448580B true CN101448580B (zh) 2011-02-23

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CN2007800102874A Expired - Fee Related CN101448580B (zh) 2006-03-24 2007-03-19 具有室去氟化和晶片去氟化中间步骤的等离子体蚀刻和光刻胶剥离工艺

Country Status (6)

Country Link
US (1) US7244313B1 (enExample)
EP (1) EP1999784A4 (enExample)
JP (1) JP4825911B2 (enExample)
KR (1) KR101032831B1 (enExample)
CN (1) CN101448580B (enExample)
WO (1) WO2007111893A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7510976B2 (en) * 2006-04-21 2009-03-31 Applied Materials, Inc. Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity
CN102097360B (zh) * 2009-12-10 2016-08-03 中芯国际集成电路制造(上海)有限公司 刻蚀连接孔的方法
CN102125921B (zh) * 2010-01-20 2012-09-05 常州瑞择微电子科技有限公司 一种光掩模在清洗过程中的传输方法
JP5600447B2 (ja) * 2010-03-05 2014-10-01 株式会社日立ハイテクノロジーズ プラズマエッチング方法
US9318341B2 (en) 2010-12-20 2016-04-19 Applied Materials, Inc. Methods for etching a substrate
US9190316B2 (en) * 2011-10-26 2015-11-17 Globalfoundries U.S. 2 Llc Low energy etch process for nitrogen-containing dielectric layer
CN104882389B (zh) * 2014-02-28 2017-12-26 无锡华润上华科技有限公司 一种半导体器件量测方法
CN105152795B (zh) * 2015-10-23 2018-11-06 武汉工程大学 共混改性二氧化硅乳液包膜磷酸二铵缓释复合肥及其制备方法
CN106356415B (zh) * 2016-12-02 2018-06-29 武汉新芯集成电路制造有限公司 背面金属格栅的制作方法
CN110998788B (zh) * 2017-08-01 2024-08-23 应用材料公司 金属氧化物后处理方法
US10872761B2 (en) 2018-06-25 2020-12-22 Mattson Technology Inc. Post etch defluorination process
CN113031409B (zh) * 2021-03-03 2024-12-31 苏州子山半导体科技有限公司 一种氧化钒热成像芯片制造中的聚酰亚胺光刻胶去除方法
JPWO2024203220A1 (enExample) * 2023-03-24 2024-10-03

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548230B1 (en) * 1998-09-18 2003-04-15 Taiwan Semiconductor Manufacturing Co., Ltd Method for in-situ removal of photoresist and sidewall polymer
US6756087B2 (en) * 1998-12-25 2004-06-29 International Business Machines Corporation Method for removing organic compound by ultraviolet radiation and apparatus therefor
CN1716530A (zh) * 2004-06-30 2006-01-04 应用材料有限公司 稳定等离子体处理的方法和设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051505A (en) 1998-03-05 2000-04-18 Taiwan Semiconductor Manufacturing Company Plasma etch method for forming metal-fluoropolymer residue free vias through silicon containing dielectric layers
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US6440864B1 (en) * 2000-06-30 2002-08-27 Applied Materials Inc. Substrate cleaning process
JP3921364B2 (ja) * 2001-08-21 2007-05-30 松下電器産業株式会社 半導体装置の製造方法
JP5038567B2 (ja) * 2001-09-26 2012-10-03 東京エレクトロン株式会社 エッチング方法
JP4326746B2 (ja) * 2002-01-07 2009-09-09 東京エレクトロン株式会社 プラズマ処理方法
US6806038B2 (en) * 2002-07-08 2004-10-19 Lsi Logic Corporation Plasma passivation
JP2004071774A (ja) * 2002-08-05 2004-03-04 Tokyo Electron Ltd マルチチャンバシステムを用いたプラズマ処理方法
US20050101135A1 (en) * 2003-11-12 2005-05-12 Lam Research Corporation Minimizing the loss of barrier materials during photoresist stripping
US7638440B2 (en) 2004-03-12 2009-12-29 Applied Materials, Inc. Method of depositing an amorphous carbon film for etch hardmask application
KR100704470B1 (ko) 2004-07-29 2007-04-10 주식회사 하이닉스반도체 비결정성 탄소막을 희생 하드마스크로 이용하는반도체소자 제조 방법
KR100632473B1 (ko) * 2004-08-03 2006-10-09 삼성전자주식회사 염기성 물질 확산 장벽막을 사용하는 미세 전자 소자의듀얼 다마신 배선의 제조 방법
US7288488B2 (en) * 2005-05-10 2007-10-30 Lam Research Corporation Method for resist strip in presence of regular low k and/or porous low k dielectric materials
US8404594B2 (en) 2005-05-27 2013-03-26 Freescale Semiconductor, Inc. Reverse ALD

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548230B1 (en) * 1998-09-18 2003-04-15 Taiwan Semiconductor Manufacturing Co., Ltd Method for in-situ removal of photoresist and sidewall polymer
US6756087B2 (en) * 1998-12-25 2004-06-29 International Business Machines Corporation Method for removing organic compound by ultraviolet radiation and apparatus therefor
CN1716530A (zh) * 2004-06-30 2006-01-04 应用材料有限公司 稳定等离子体处理的方法和设备

Non-Patent Citations (2)

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Title
CN 1716530 A,全文.
US 2004/0005517 A1,全文.

Also Published As

Publication number Publication date
JP2009530861A (ja) 2009-08-27
EP1999784A2 (en) 2008-12-10
JP4825911B2 (ja) 2011-11-30
EP1999784A4 (en) 2010-05-19
WO2007111893A2 (en) 2007-10-04
CN101448580A (zh) 2009-06-03
US7244313B1 (en) 2007-07-17
KR101032831B1 (ko) 2011-05-06
KR20090026253A (ko) 2009-03-12
WO2007111893A3 (en) 2009-01-08

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