JP2009530851A5 - - Google Patents

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Publication number
JP2009530851A5
JP2009530851A5 JP2009501458A JP2009501458A JP2009530851A5 JP 2009530851 A5 JP2009530851 A5 JP 2009530851A5 JP 2009501458 A JP2009501458 A JP 2009501458A JP 2009501458 A JP2009501458 A JP 2009501458A JP 2009530851 A5 JP2009530851 A5 JP 2009530851A5
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JP
Japan
Prior art keywords
workpiece
hydrogen
process gas
polymer
electrostatic chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009501458A
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English (en)
Japanese (ja)
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JP2009530851A (ja
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Publication date
Priority claimed from US11/386,428 external-priority patent/US7432209B2/en
Application filed filed Critical
Publication of JP2009530851A publication Critical patent/JP2009530851A/ja
Publication of JP2009530851A5 publication Critical patent/JP2009530851A5/ja
Pending legal-status Critical Current

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JP2009501458A 2006-03-22 2007-03-14 低誘電率材料のイン・サイチュの裏側ポリマー除去を含むプラズマ誘電エッチング方法 Pending JP2009530851A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/386,428 US7432209B2 (en) 2006-03-22 2006-03-22 Plasma dielectric etch process including in-situ backside polymer removal for low-dielectric constant material
PCT/US2007/006449 WO2007111837A2 (en) 2006-03-22 2007-03-14 Plasma dielectric etch process including in-situ backside polymer removal for low-dielectric constant material

Publications (2)

Publication Number Publication Date
JP2009530851A JP2009530851A (ja) 2009-08-27
JP2009530851A5 true JP2009530851A5 (enExample) 2010-04-30

Family

ID=38534046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009501458A Pending JP2009530851A (ja) 2006-03-22 2007-03-14 低誘電率材料のイン・サイチュの裏側ポリマー除去を含むプラズマ誘電エッチング方法

Country Status (7)

Country Link
US (1) US7432209B2 (enExample)
EP (1) EP1997127A4 (enExample)
JP (1) JP2009530851A (enExample)
KR (1) KR101019931B1 (enExample)
CN (1) CN101536155B (enExample)
TW (1) TW200741861A (enExample)
WO (1) WO2007111837A2 (enExample)

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US7288484B1 (en) 2004-07-13 2007-10-30 Novellus Systems, Inc. Photoresist strip method for low-k dielectrics
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US8129281B1 (en) 2005-05-12 2012-03-06 Novellus Systems, Inc. Plasma based photoresist removal system for cleaning post ash residue
CN1978351A (zh) * 2005-12-02 2007-06-13 鸿富锦精密工业（深圳）有限公司 一种模仁保护膜的去除装置及方法
US7740768B1 (en) * 2006-10-12 2010-06-22 Novellus Systems, Inc. Simultaneous front side ash and backside clean
JP4755963B2 (ja) * 2006-10-30 2011-08-24 株式会社東芝 半導体装置の製造方法
US20080141509A1 (en) * 2006-12-19 2008-06-19 Tokyo Electron Limited Substrate processing system, substrate processing method, and storage medium
US8083963B2 (en) * 2007-02-08 2011-12-27 Applied Materials, Inc. Removal of process residues on the backside of a substrate
US8435895B2 (en) 2007-04-04 2013-05-07 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
US9732416B1 (en) 2007-04-18 2017-08-15 Novellus Systems, Inc. Wafer chuck with aerodynamic design for turbulence reduction
US20080260946A1 (en) * 2007-04-20 2008-10-23 United Microelectronics Corp. Clean method for vapor deposition process
US8329593B2 (en) * 2007-12-12 2012-12-11 Applied Materials, Inc. Method and apparatus for removing polymer from the wafer backside and edge
US8419964B2 (en) 2008-08-27 2013-04-16 Novellus Systems, Inc. Apparatus and method for edge bevel removal of copper from silicon wafers
US8591661B2 (en) * 2009-12-11 2013-11-26 Novellus Systems, Inc. Low damage photoresist strip method for low-K dielectrics
US8094428B2 (en) * 2008-10-27 2012-01-10 Hermes-Microvision, Inc. Wafer grounding methodology
CN102064106B (zh) * 2009-11-18 2013-04-17 无锡华润上华半导体有限公司 孔刻蚀中预去除聚合物的方法
WO2011072061A2 (en) 2009-12-11 2011-06-16 Novellus Systems, Inc. Enhanced passivation process to protect silicon prior to high dose implant strip
US20110143548A1 (en) 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
KR101131740B1 (ko) * 2011-06-20 2012-04-05 주식회사 테라텍 원격 플라즈마 발생장치를 이용한 웨이퍼 뒷면 건식 식각 방법
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
KR101276318B1 (ko) * 2011-10-12 2013-06-18 주식회사 테라텍 원격 플라즈마 발생장치를 이용한 웨이퍼 뒷면 건식 식각 방법
US9881788B2 (en) 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
CN106920727B (zh) * 2015-12-24 2018-04-20 中微半导体设备(上海)有限公司 等离子体处理装置及其清洗方法
KR102528559B1 (ko) 2016-07-26 2023-05-04 삼성전자주식회사 대면적 기판 제조 장치
CN111341657A (zh) * 2018-12-19 2020-06-26 夏泰鑫半导体(青岛)有限公司 等离子体处理方法
CN109727857B (zh) * 2018-12-29 2021-06-15 上海华力集成电路制造有限公司 干法刻蚀方法
KR102618869B1 (ko) 2020-01-03 2023-12-27 램 리써치 코포레이션 배면 보우 보상 증착의 스테이션-대-스테이션 (station-to-station) 제어
CN115053325A (zh) 2020-01-30 2022-09-13 朗姆研究公司 用于局部应力调节的uv固化
CN113031409B (zh) * 2021-03-03 2024-12-31 苏州子山半导体科技有限公司 一种氧化钒热成像芯片制造中的聚酰亚胺光刻胶去除方法

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JP2833946B2 (ja) * 1992-12-08 1998-12-09 日本電気株式会社 エッチング方法および装置
US5834371A (en) * 1997-01-31 1998-11-10 Tokyo Electron Limited Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
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JP3253604B2 (ja) * 1998-11-13 2002-02-04 セイコーエプソン株式会社 半導体装置の製造方法
US7141757B2 (en) * 2000-03-17 2006-11-28 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent
US6733594B2 (en) * 2000-12-21 2004-05-11 Lam Research Corporation Method and apparatus for reducing He backside faults during wafer processing
US6991739B2 (en) * 2001-10-15 2006-01-31 Applied Materials, Inc. Method of photoresist removal in the presence of a dielectric layer having a low k-value
US6680164B2 (en) * 2001-11-30 2004-01-20 Applied Materials Inc. Solvent free photoresist strip and residue removal processing for post etching of low-k films
US6777334B2 (en) * 2002-07-03 2004-08-17 Taiwan Semiconductor Manufacturing Co., Ltd Method for protecting a wafer backside from etching damage
JP2004079664A (ja) * 2002-08-13 2004-03-11 Seiko Epson Corp エッチング装置および反応生成物の除去方法
JP4656364B2 (ja) * 2003-03-13 2011-03-23 東京エレクトロン株式会社 プラズマ処理方法
JP4380414B2 (ja) * 2004-05-17 2009-12-09 ソニー株式会社 半導体装置の製造方法
US7597816B2 (en) * 2004-09-03 2009-10-06 Lam Research Corporation Wafer bevel polymer removal
US7276447B1 (en) * 2006-04-11 2007-10-02 Applied Materials, Inc. Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material

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