JP2019530230A - 高アスペクト比構造のためのストリッププロセス - Google Patents
高アスペクト比構造のためのストリッププロセス Download PDFInfo
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Abstract
Description
本出願は、2016年9月14日に出願された、“Strip Process for High Aspect Ratio Structure”と題され、参照により本明細書に組み込まれた、米国特許仮出願第62/394,242号明細書(U.S. Provisional Application Serial No. 62/394,242)の優先権の利益を主張する。本出願は、2017年2月9日に出願された、“Strip Process for High Aspect Ratio Structure”と題され、参照により本明細書に組み込まれた、米国特許仮出願第62/456,911号明細書(U.S. Provisional Application Serial No. 62/456,911)の優先権の利益を主張する。
本開示は、概してマスク材料の除去に関し、より詳細には、高アスペクト比構造を有する半導体材料からマスク材料を除去するための方法に関する。
アモルファスカーボン層(ACL)またはパターン画定膜(PDF)などのカーボン含有ハードマスクは、DRAMまたは3D NANDデバイスなどの高アスペクト比構造をエッチングするためのマスキング材料としての使用(例えば、DRQAMでのOCSエッチングまたは3D NANDでの高アスペクト比コンタクトエッチングなどの用途)に広く適している。高アスペクト比構造を用いるエッチングプロセスまたはストリッププロセスは、いくつかの課題をもたらし得る。
本開示の実施形態の態様および利点は、以下の詳細な説明に部分的に記載されることになるか、あるいは詳細な説明から学ぶか、または実施形態の実施を通じて学んでもよい。
ここで実施形態を詳細に参照することになるが、その1つ以上の例が、図面に例示されている。それぞれの例は、実施形態の説明として提供されており、本開示を限定するものではない。実際には、本開示の範囲または趣旨から逸脱することなく、実施形態に対して様々な修正および変形を加えることができることが当業者に明らかになる。例えば、一実施形態の一部として図示または説明されている特徴を、別の実施形態と共に使用して、さらに別の実施形態を生み出すことができる。したがって、本開示の態様が、このような修正および変形を包含することが意図されている。
Claims (20)
- 高アスペクト比構造を有する基板からドープトアモルファスカーボン膜の少なくとも一部を除去するための方法であって、
基板上の高アスペクト比構造の上端の少なくとも一部にポリマー層を堆積させること;および
プラズマストリッププロセスを用いて、前記基板から前記ポリマー層および前記ドープトアモルファスカーボン膜の少なくとも一部を除去すること
を含む、方法。 - ポリマー層を堆積することは、1つ以上の高アスペクト比構造を前記ポリマー層で塞ぐことを含む、請求項1記載の方法。
- ポリマー層を堆積することは、1つ以上の高アスペクト比構造の側壁にポリマー層を形成することを含む、請求項1記載の方法。
- 前記ポリマー層は、CHF3、H2、N2、Arまたはそれらの組み合わせのうちの1つ以上を用いるポリマー堆積を用いて形成される、請求項1記載の方法。
- 前記ポリマー層は、任意のH2または任意のCx1Hy1と組み合わせたガスCxHyFz(ここでx、y、z、x1、およびy1は、整数である)を用いて形成される、請求項1記載の方法。
- 前記ポリマー層は、約10ミリトル〜約5トルの範囲の圧力で形成される、請求項1記載の方法。
- ポリマー層を堆積させることは、エッチングチャンバ内で実施され、ポリマー層およびドープトアモルファスカーボン膜の少なくとも一部を除去することは、プラズマチャンバとは別のストリップチャンバ内で実施される、請求項1記載の方法。
- ポリマー層を堆積させ、かつポリマー層および前記ドープトアモルファスカーボン膜の少なくとも一部を除去することは、同じチャンバ内で実施される、請求項1記載の方法。
- ポリマー層を堆積させ、かつポリマー層および前記ドープトアモルファスカーボン膜の少なくとも一部を除去することは、前記ドープトアモルファスカーボン層が前記基板から除去されるまで繰り返される、請求項1記載の方法。
- 前記プラズマストリッププロセスは、酸素含有ガス、ハロゲン含有ガス、および水素を含む還元性ガスの混合物を使用して形成されたプラズマを使用する、請求項1記載の方法。
- 前記ハロゲン含有ガスに対する前記還元性ガスの比は、約0.001〜約3の範囲内にある、請求項10記載の方法。
- 前記ドープトアモルファスカーボン膜は、ホウ素ドープトアモルファスカーボン膜である、請求項1記載の方法。
- 1つ以上の高アスペクト比構造を有するパターン化領域を有する基板からマスク層の少なくとも一部を除去するための方法であって、
前記基板を、プラズマ処理装置内に配置すること;
前記プラズマ処理装置内でポリマー堆積プロセスを実施して、前記基板の前記パターン化領域の少なくとも一部にポリマー層を堆積すること;
前記プラズマ処理装置内でプラズマストリッププロセスを実施して、前記基板から前記ポリマー層の少なくとも一部および前記マスク層の少なくとも一部を除去すること
を含む、方法。 - 前記ポリマー堆積プロセスは、1つ以上の高アスペクト比構造を前記ポリマー層で塞ぐ、請求項1記載の方法。
- 前記ポリマー堆積プロセスは、1つ以上の高アスペクト比構造の側壁にポリマー層を形成する、請求項13記載の方法。
- 前記ポリマー層は、CHF3、H2、N2、Arまたはそれらの組み合わせのうちの1つ以上を用いて形成される、請求項13記載の方法。
- 前記ポリマー層は、任意のH2または任意のCx1Hy1と組み合わせたガスCxHyFz(ここでx、y、z、x1、およびy1は、整数である)を使用して形成される、請求項13記載の方法。
- 前記プラズマ処理装置は、ストリップチャンバを含む、請求項13記載の方法。
- 1つ以上の高アスペクト比構造を有するパターン化領域を有する基板からマスク層の少なくとも一部を除去するための方法であって、
前記基板を、第1のプラズマ処理装置内に配置すること;
前記第1のプラズマ処理装置内でポリマー堆積プロセスを実施して、前記基板の前記パターン化領域の少なくとも一部にポリマー層を堆積すること;
前記基板を、第2のプラズマ処理装置に移送すること;および
前記第2のプラズマ処理装置内でプラズマストリッププロセスを実施して、前記基板から前記ポリマー層の少なくとも一部および前記マスク層の少なくとも一部を除去すること
を含む、方法。 - 前記第1のプラズマ処理装置は、エッチングチャンバを含み、かつ前記第2のプラズマ処理装置は、ストリップチャンバを含む、請求項19記載の方法。
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