JP7025600B2 - ホウ素ドープアモルファスカーボンハードマスク及び方法 - Google Patents
ホウ素ドープアモルファスカーボンハードマスク及び方法 Download PDFInfo
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- JP7025600B2 JP7025600B2 JP2021523034A JP2021523034A JP7025600B2 JP 7025600 B2 JP7025600 B2 JP 7025600B2 JP 2021523034 A JP2021523034 A JP 2021523034A JP 2021523034 A JP2021523034 A JP 2021523034A JP 7025600 B2 JP7025600 B2 JP 7025600B2
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- 238000000034 method Methods 0.000 title claims description 153
- 229910003481 amorphous carbon Inorganic materials 0.000 title claims description 147
- 239000000758 substrate Substances 0.000 claims description 142
- 238000005530 etching Methods 0.000 claims description 93
- 229910052796 boron Inorganic materials 0.000 claims description 88
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 85
- 238000004377 microelectronic Methods 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 50
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 31
- 229910052799 carbon Inorganic materials 0.000 claims description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 15
- 238000005468 ion implantation Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- -1 boron ions Chemical class 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 description 36
- 239000002019 doping agent Substances 0.000 description 19
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- 239000002194 amorphous carbon material Substances 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
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- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical group C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000010561 standard procedure Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
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- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
Claims (12)
- マイクロ電子デバイス基板を作製する方法であって、
基板のアモルファスカーボンハードマスク層をエッチングして、前記アモルファスカーボンハードマスク層に開口部を形成することであって、前記基板が、マイクロ電子デバイスの1又は複数の層、及びその上面において前記アモルファスカーボンハードマスク層を含む、開口部を形成することと、
前記アモルファスカーボンハードマスク層をエッチングして前記開口部を形成することに続いて、前記基板の前記アモルファスカーボンハードマスク層へイオン注入によってホウ素を注入することであって、ホウ素イオンのビームが、前記基板の中心軸に対して角度をつけて前記基板に向けて方向付けられ、前記ホウ素が、前記アモルファスカーボンハードマスク層の厚さ部分の上部に比較的高濃度で、かつ前記厚さ部分の下部に比較的低濃度で、注入されることと、
前記アモルファスカーボンハードマスク層をアニールすることと、を含む、方法。 - アニール後、ホウ素ドープされた前記アモルファスカーボンハードマスク層は、アニールされていない比較対象のホウ素ドープアモルファスカーボンハードマスク層のエッチング抵抗と比べて、エッチング抵抗が増加している、請求項1に記載の方法。
- 前記ホウ素のイオン注入中に前記アモルファスカーボンハードマスク層をアニールすることを含む、請求項1に記載の方法。
- アニール中に前記基板を摂氏150~400度の範囲の温度に加熱することを含む、請求項1に記載の方法。
- 前記アモルファスカーボンハードマスク層が、0.5~5ミクロンの範囲の厚さを有する、請求項1に記載の方法。
- 前記アモルファスカーボンハードマスク層の前記開口部を通して前記基板をエッチングして、前記基板に開口部を形成することを含み、前記基板の前記開口部が、少なくとも40:1のアスペクト比を有する、請求項1に記載の方法。
- 前記基板の前記開口部が、チャネルホールである、請求項6に記載の方法。
- カーボンアモルファス層上にパターニングされたマスクを形成することを含む、請求項1に記載の方法。
- 前記基板をエッチングする工程が、前記基板の材料をフッ素化又は過フッ素化ガス状エッチャントに曝露することを含む、請求項6に記載の方法。
- 前記基板をエッチングした後、酸素プラズマエッチングによって前記アモルファスカーボンハードマスク層の残留部分を除去することを含む、請求項9に記載の方法。
- 前記基板が、シリコン含有材料の複数の層を含むフィルムスタックを含む、請求項1に記載の方法。
- 前記基板が、酸化ケイ素及び窒化ケイ素の複数の層を含む、請求項1に記載の方法。
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PCT/US2019/057198 WO2020092039A1 (en) | 2018-10-31 | 2019-10-21 | Boron-doped amorphous carbon hard mask and methods |
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WO2021225790A1 (en) * | 2020-05-05 | 2021-11-11 | Lam Research Corporation | Inert gas implantation for hard mask selectivity improvement |
WO2022026822A1 (en) | 2020-07-30 | 2022-02-03 | Entegris, Inc. | Method for removing hard masks |
US11854770B2 (en) * | 2021-01-14 | 2023-12-26 | Applied Materials, Inc. | Plasma processing with independent temperature control |
US20220230887A1 (en) * | 2021-01-15 | 2022-07-21 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
CN113192958B (zh) * | 2021-04-28 | 2022-01-04 | 长江存储科技有限责任公司 | 存储器件及其制造方法 |
CN115172158A (zh) * | 2022-07-12 | 2022-10-11 | 长鑫存储技术有限公司 | 半导体结构的制造方法 |
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KR102336347B1 (ko) | 2021-12-06 |
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US20200135485A1 (en) | 2020-04-30 |
WO2020092039A1 (en) | 2020-05-07 |
US11049728B2 (en) | 2021-06-29 |
JP2021530119A (ja) | 2021-11-04 |
CN112956000A (zh) | 2021-06-11 |
CN112956000B (zh) | 2022-07-12 |
EP3874536A4 (en) | 2022-08-10 |
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