TW202024384A - 經硼摻雜之非晶形碳硬遮罩及相關方法 - Google Patents
經硼摻雜之非晶形碳硬遮罩及相關方法 Download PDFInfo
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- TW202024384A TW202024384A TW108139269A TW108139269A TW202024384A TW 202024384 A TW202024384 A TW 202024384A TW 108139269 A TW108139269 A TW 108139269A TW 108139269 A TW108139269 A TW 108139269A TW 202024384 A TW202024384 A TW 202024384A
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- 229910003481 amorphous carbon Inorganic materials 0.000 title claims abstract description 152
- 238000000034 method Methods 0.000 title claims abstract description 83
- 239000000758 substrate Substances 0.000 claims description 127
- 229910052796 boron Inorganic materials 0.000 claims description 110
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 108
- 238000005530 etching Methods 0.000 claims description 89
- 239000000463 material Substances 0.000 claims description 53
- 238000004377 microelectronic Methods 0.000 claims description 50
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 35
- 229910052799 carbon Inorganic materials 0.000 claims description 34
- 239000010409 thin film Substances 0.000 claims description 24
- 238000005468 ion implantation Methods 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 19
- 239000002019 doping agent Substances 0.000 description 19
- 239000001301 oxygen Substances 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 19
- 238000010884 ion-beam technique Methods 0.000 description 12
- 239000002194 amorphous carbon material Substances 0.000 description 9
- 238000002513 implantation Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- -1 sp1 Chemical compound 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000010561 standard procedure Methods 0.000 description 2
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical compound CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
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Abstract
本發明描述經硼摻雜之非晶形碳硬遮罩、製備經硼摻雜之非晶形碳硬遮罩之方法、使用該等經硼摻雜之非晶形碳硬遮罩之方法及包含該等經硼摻雜之非晶形碳硬遮罩之裝置。
Description
下文揭露係關於經硼摻雜之非晶形碳硬遮罩、製備經硼摻雜之非晶形碳硬遮罩之方法、在蝕刻步驟期間使用經硼摻雜之非晶形碳硬遮罩之方法及包含經硼摻雜之非晶形碳硬遮罩之裝置(微電子裝置基板)。
處理半導體及微電子裝置涉及沈積材料層及藉由稱為「蝕刻」之化學程序移除材料之各種步驟。藉由蝕刻,將薄遮罩層放置於沈積材料層上方。接著,在遮罩中形成開口且曝露基板之選擇部分。接著,使經遮蔽基板與蝕刻劑接觸,該蝕刻劑穿過遮罩中之開口接觸下層基板之材料且以化學方式降解及移除基板之材料以在基板中形成開口(三維空間)。
許多較新類型之基板(諸如用於製備三維記憶體裝置之基板)經處理以形成具有高縱橫比之開口,例如具有延伸至基板中之顯著大於開口之寬度尺寸(例如,直徑)之深度的開口。作為一個實例,藉由在深度方向上將垂直延伸開口蝕刻至許多沈積薄膜層之堆疊中而形成3D NAND記憶體裝置之垂直延伸「通道孔」。通道孔之深度可比通道孔之直徑大20倍、40倍或50倍或更多。藉由蝕刻在微電子裝置中形成此類型之高縱橫比特徵需要專業化程度高的、準確的且精確的蝕刻程序。
針對此類型之蝕刻步驟,將抗化學性「硬遮罩」放置於多個沈積薄膜層之頂層上方。薄膜層(有時被稱為「薄膜堆疊」)係記憶體裝置之功能材料且可為經沈積氧化矽、氮化矽、多晶矽或類似者之層。硬遮罩對用於以化學方式降解及移除薄膜堆疊之材料以在基板中形成高縱橫比開口(例如,通道孔)的蝕刻溶液有抗性。
一種常見類型之硬遮罩係非晶形碳硬遮罩。將此類型之硬遮罩作為連續層沈積至微電子裝置基板上且接著進行蝕刻以在硬遮罩中形成開口。接著,藉由將具有硬遮罩之基板曝露於能夠以化學方式降解薄膜堆疊之材料的氣態化學蝕刻劑而執行蝕刻下層基板之後續步驟。氣態蝕刻劑行進通過硬遮罩中之開口以接觸且蝕除(即,移除)基板之材料,以在基板中產生開口。在已如所需般蝕除基板材料之後,必須自基板移除硬遮罩以容許將基板進一步處理為成品微電子裝置。
產生展現高縱橫比之精確形成且良好界定之基板開口可極具挑戰性。通常被研究以改良總體程序之蝕刻程序之一個組件係硬遮罩,包含硬遮罩之組合物及施覆及移除硬遮罩之方法。與硬遮罩相關之過去研究已涉及用硼摻雜非晶形碳硬遮罩以增加硬遮罩對化學蝕刻劑之抗性。
本發明之一個態樣包含一種方法,其用於:在微電子裝置基板上形成非晶形碳層;蝕刻該非晶形碳層以在該非晶形碳層中形成開口;及接著用硼摻雜該經蝕刻非晶形碳層以形成經硼摻雜之非晶形碳硬遮罩。該摻雜步驟係使用離子束植入方法執行。經硼摻雜之非晶形碳硬遮罩層經退火(在該硼摻雜步驟期間或之後)以改良該硬遮罩之化學抗性。
本發明之第二態樣包含一種方法,其用於:在微電子裝置基板上形成非晶形碳層;運用遮罩圖案化該非晶形碳層之至少一部分;用硼摻雜該非晶形碳層以形成經硼摻雜之非晶形碳硬遮罩;蝕刻該非晶形碳硬遮罩以在該非晶形碳層中形成開口。該摻雜步驟係使用離子束植入方法執行。經硼摻雜之非晶形碳硬遮罩層經退火(在該硼摻雜步驟期間或之後)以改良該硬遮罩之化學抗性。
在本發明之另一態樣中,藉由離子束植入之該非晶形碳硬遮罩產生經硼摻雜之非晶形碳硬遮罩層,該層包含該硬遮罩層之頂部(上部)部分處之較高濃度之硼,及該硬遮罩層之底部(下部)部分處之較低濃度之硼。該硬遮罩層中之該硼之此濃度梯度可為尤其有用的。該硬遮罩層之該上部部分處之該高濃度之硼增加該硬遮罩在該上部部分處之該化學抗性,其中該硬遮罩在蝕刻步驟期間需要增加的化學抗性。該硬遮罩層之該上部部分之增加的化學抗性可容許該經硼摻雜之非晶形碳硬遮罩可用作用於使用更強侵蝕性化學蝕刻劑之蝕刻步驟或用於與相當的蝕刻步驟相比必須在相對較長時間段內執行以例如產生基板開口(諸如具有相對增加深度及相對較高縱橫比之通道孔)之蝕刻步驟的硬遮罩。替代地或另外,該硬遮罩之上層之該增加的化學抗性可容許該經硼摻雜之非晶形碳硬遮罩之減小的厚度以用相等強度之蝕刻劑執行蝕刻步驟,且容許執行該蝕刻步驟之相等時間量。
雖然該硬遮罩之該上部部分含有硼以增加對蝕刻步驟之該蝕刻劑之化學抗性,但該硬遮罩層之該下部部分不需要顯著增加的化學抗性。該下部部分可含有較低濃度之硼作為摻雜劑。運用該較低濃度之硼,可在於蝕刻步驟期間使用該硬遮罩之後更容易移除該下部部分。
在本發明之另一態樣中,藉由離子束植入之該非晶形碳硬遮罩產生經硼摻雜之非晶形碳硬遮罩層,該層在整個該碳硬遮罩內包含更一致濃度位準之硼。
在一個態樣中,本發明係關於一種製備微電子裝置基板之方法。該方法包含:藉由離子植入將硼植入至基板之非晶形碳層中,該基板包括微電子裝置之一或多個層及頂表面處之非晶形碳硬遮罩層;及使該非晶形碳硬遮罩層退火。
在另一態樣中,本發明係關於一種微電子裝置基板。該基板包含:微電子裝置之一或多個層;及經硼摻雜之硬遮罩層,其在該一或多個層之上表面上,且包括接觸該微電子裝置之該上表面之第一表面、曝露表面、在該第一表面與該曝露表面之間之厚度及延伸穿過該厚度之開口。該經硼摻雜之硬遮罩層包含非晶形碳及植入硼,其中該硼以相對較高濃度存在於該非晶形碳硬遮罩層之厚度之上部部分處,且以相對較低濃度存在於該厚度之下部部分處,且該經硼摻雜之硬遮罩層經退火。
本發明揭示用於形成經硼摻雜之非晶形碳硬遮罩之方法及程序。該等方法包含:在微電子裝置基板上形成非晶形碳層;蝕刻非晶形碳層以在非晶形碳層中形成開口;及接著用硼摻雜經蝕刻非晶形碳層以形成經硼摻雜之非晶形碳硬遮罩。摻雜步驟係使用離子束植入方法執行。經硼摻雜之非晶形碳硬遮罩層經退火以改良硬遮罩之化學抗性。
下文描述亦描述包含如所描述之經退火、經硼摻雜之非晶形硬遮罩之多層結構(例如,微電子裝置,特別是製程中(in-process)微電子裝置)及在處理微電子裝置時使用經退火、經硼摻雜之非晶形碳硬遮罩之方法。
如所描述之經硼摻雜之硬遮罩(在本文中有時簡稱為「硬遮罩」、「經硼摻雜之硬遮罩」等)可藉由首先在微電子裝置之表面上形成非晶形碳層而形成。此非晶形碳層在被施覆時可為且較佳未經硼摻雜。接著,蝕刻非晶形碳層以在碳層中形成孔,而導致放置於基板之表面處之經蝕刻且較佳未經硼摻雜之非晶形硬遮罩層。接著,在蝕刻步驟之後,藉由離子束植入方法用硼摻雜經蝕刻非晶形硬遮罩層以形成經硼摻雜之非晶形碳硬遮罩層。在用硼摻雜非晶形碳層之步驟期間或之後,使經硼摻雜之硬遮罩退火。
在本發明之一個態樣中,可藉由離子束植入方法將硼摻雜劑添加至非晶形碳層,其方式使得在層之表面處及附近(即,在「上部」部分或「表面」部分處)產生較高濃度之硼(與存在於非晶形碳層之下部部分處之硼之濃度相比)。離子植入摻雜步驟可經控制以引起沿非晶形碳層之深度或「厚度」方向之硼濃度差異(例如,濃度梯度)。如所需般,可產生含有硼摻雜劑之非晶形碳層以在非晶形碳層之上部部分處含有較高濃度之硼,其中硼濃度隨著在層之深度方向上之位置而減小(例如,逐漸或以其他方式)。非晶形碳層之下部部分或底部可含有極少量之硼或實質上不含硼。
此濃度梯度有用且有利之原因係硼摻雜劑增加硬遮罩在上部部分處(其中硬遮罩需要增加的化學抗性)之化學抗性,但未增加硬遮罩在下部部分處(其中增加的化學抗性不被需要且事實上將引起硬遮罩在硬遮罩已在基板蝕刻步驟期間用於其目的之後更難以自基板移除)之化學抗性。
在蝕刻包含經硼摻雜之硬遮罩之微電子裝置基板之步驟中,存在於非晶形碳層之上部部分處之較高濃度之硼有利地容許經硼摻雜之硬遮罩之使用期間的經改良功能性。特定言之,在涉及硬遮罩之蝕刻步驟期間,一或多個蝕刻劑將用於自基板之選定部分移除材料,該等選定部分透過硬遮罩中之孔曝露。然而,在蝕刻期間,蝕刻劑亦對硬遮罩本身之表面具有化學效應,而引起自硬遮罩之表面的一定量之材料移除。在於基板中形成完整蝕刻開口(諸如具有高縱橫比之通道孔)之蝕刻程序期間,將藉由蝕刻劑移除硬遮罩層之上部部分之顯著量。在此基板蝕刻步驟期間,硬遮罩層之上部部分處之硼摻雜劑將增加硬遮罩之上部部分對化學蝕刻劑之抗性。硬遮罩之經硼摻雜之上部部分之一些仍將在基板蝕刻步驟期間被逐漸移除,且在步驟結束時,硬遮罩之下部部分將剩餘為硬遮罩之曝露表面。硬遮罩層之此下部部分與上部部分相比將含有相對較低濃度之硼摻雜劑。下部部分中之相對較低濃度之硼不會過度地增加在完成基板蝕刻步驟之後移除剩餘量之硬遮罩的難度。
因此,如所呈現,本描述之經退火經硼摻雜之硬遮罩(尤其是硬遮罩層之經硼摻雜之上部部分)在基板蝕刻步驟期間展現對蝕刻劑之增加的化學抗性。在基板蝕刻步驟期間,硬遮罩層之此經硼摻雜之上部部分展現對蝕刻劑之高抗性且保護下層基板表面免受蝕刻劑影響。亦在基板蝕刻步驟期間,硬遮罩層之曝露頂表面被蝕刻劑逐漸化學腐蝕,且硬遮罩層之上部部分之材料被逐漸移除。
在完成基板蝕刻步驟之後,原始硬遮罩層之下部部分剩餘且存在於曝露表面處。硬遮罩層之此下部部分與上部部分相比含有相對較低量之硼摻雜劑,此對於在基板蝕刻步驟期間提供抗蝕刻性係重要的。必須在基板蝕刻步驟之後移除硬遮罩之此下部部分以容許基板之繼續處理。因為下部部分含有較低量之硼摻雜劑,所以可在需要移除硬遮罩層時更容易移除下部部分。
較佳地,可藉由已知對於蝕刻或移除未經硼摻雜之非晶形碳層有用之各種蝕刻技術之一者移除硬遮罩之剩餘(下部)部分。實例包含基於氧之蝕刻技術,包含下文更詳細描述之技術。
在本發明之另一實施例中,將硼摻雜至碳非晶形層中,使得摻雜於碳硬遮罩中之硼在整個碳非晶形層內係一致的。例如,使用所描述方法摻雜硼將導致碳非晶形層之頂部及下部部分中之實質上一致量之硼摻雜劑。
本發明之第二態樣包含一種方法,其用於:在微電子裝置基板上形成非晶形碳層;在非晶形碳層之至少一部分上進行圖案化;用硼摻雜非晶形碳層以形成經硼摻雜之非晶形碳硬遮罩;蝕刻非晶形碳硬遮罩以在非晶形碳層中形成開口。摻雜步驟係使用離子束植入方法執行。經硼摻雜之非晶形碳硬遮罩層經退火(在硼摻雜步驟期間或之後)以改良硬遮罩之化學抗性。
為比較,某些其他經硼摻雜之硬遮罩層在整個硬遮罩層之整個厚度內含有硼摻雜劑。在此等硬遮罩中,在基板蝕刻步驟結束時剩餘在基板上且必須在基板蝕刻步驟之後藉由進一步蝕刻移除之硬遮罩之下部部分可含有實質上增加硬遮罩層之化學抗性程度之一定量之硼。為移除此類型之剩餘經硼摻雜之硬遮罩層,通常使用高度侵蝕性蝕刻技術,此與可用於移除未經硼摻雜之非晶形碳層之典型基於氧之蝕刻技術相反。例如,為移除包含多於非實質量之硼作為摻雜劑之硬遮罩的剩餘下部部分,可使用之某些技術包含使用氧作為蝕刻劑但亦需要一或多種額外更高度侵蝕性蝕刻劑材料(諸如CF4
、H2
或另一更高度侵蝕性蝕刻劑)之改性氧電漿技術,或甚至可使用化學及非化學(例如,機械)移除技術兩者之實質上不同且經專門設計之蝕刻步驟。
所描述經硼摻雜之硬遮罩可用於藉由在藉由蝕刻基板以移除基板之材料以形成開口而在基板中形成開口之步驟期間用作硬遮罩而製備微電子裝置基板。微電子裝置基板(或簡稱為「基板」)可涉及任何類型之微電子裝置,包含「製程中」(或「前驅體」)裝置,其意謂包含成品微電子裝置之結構、材料及特徵但未完成且仍在製造程序中之裝置。微電子裝置可為提供記憶體功能之裝置或提供邏輯功能之裝置。其中所描述硬遮罩將有用之微電子裝置基板之特定實例包含製程中記憶體裝置,其等需要蝕刻之處理步驟以形成高縱橫比基板結構,諸如稱為3D NAND裝置之垂直三維記憶體裝置。
基板可含有絕緣、導電及半導電材料之一或多個層,其等將沈積為微電子裝置基板之部分且接著在使用硬遮罩控制蝕刻之位置之蝕刻步驟中被蝕刻。基板可包含多個沈積薄膜層,有時被稱為包含一或多種含矽材料(氮化矽、氧化矽、多晶矽)或其他絕緣、導電、半導電或介電材料之沈積層的「薄膜堆疊」。作為單一實例,有用基板可為3D NAND記憶體裝置之多層前驅體。例示性裝置可包含許多含矽材料層,其等將經蝕刻以形成具有高縱橫比之垂直延伸通道孔。該等層可形成包含許多(例如,數十個或數打)交替對之兩種不同含矽材料的薄膜堆疊。作為特定實例,基板可包含交替對之沈積薄膜層之堆疊,其中各對包含一個二氧化矽層及一個氮化矽層。此薄膜堆疊可含有任何數目個此等材料對,諸如至少48對、56對或96對之此兩個層或更多。
硬遮罩在蝕刻基板以自基板選擇性地移除材料且在基板內自經移除材料形成開口或空間之步驟(此步驟在本文中有時被稱為「基板蝕刻」步驟)中可為有用的。基板蝕刻步驟可出於在基板中形成敞開結構之目的而執行,且已知用於執行此等步驟之蝕刻方法、蝕刻劑以及蝕刻系統及設備之許多實例。敞開結構(「開口」)可為形成於微電子裝置基板中(例如,自基板之薄膜堆疊)之任何有用結構。在某些例示性方法中,結構可為具有高縱橫比(諸如至少20:1、40:1或60:1之縱橫比)之結構。在製程中半導體裝置基板中形成之此等類型之已知結構(開口)之實例包含通道孔、字線開口、互連件及類似者。
現參考圖描述可在實踐本發明期間發生之方法及各種相關結構之特徵。
圖1處展示本描述之方法之某些步驟之實例。此展示包含以微電子裝置基板開始之步驟12之方法10。作為一個實例,基板可為包含在微電子裝置中有用多個離散沈積材料層之多層薄膜堆疊的製程中記憶體裝置。例示性薄膜堆疊可為將經受蝕刻程序以自薄膜堆疊之層選擇性地移除材料之薄膜堆疊。在步驟14中,將非晶形碳層形成至基板之表面上。
參考圖2A,其繪示含有多對之含矽微電子裝置材料之層(例如,薄膜堆疊)之微電子裝置基板之單一實例之示意性描繪。如所描述之程序之前期步驟可為在微電子裝置基板之上表面處形成非晶形碳層之步驟14。
如圖2A處展示,工件100包含含有薄膜堆疊104及支撐件102之微電子裝置基板。薄膜堆疊104含有多個微電子材料層106,諸如一或多個導電層、絕緣層或其他類型之層(例如,蝕刻停止層)。例如,各層106 (TO1)可包含一對之沈積氧化矽層及沈積氮化矽層。薄膜堆疊104可包含任何有用數目個此等對,諸如24對、48對、56對、96對等。非晶形碳層108在薄膜堆疊104之頂表面或上表面處。
關於非晶形碳層108更詳細而言,此層可為由非晶形碳材料製備使得在蝕刻薄膜堆疊104之步驟期間用作硬遮罩之層。一般而言,非晶形碳層(諸如層108)可藉由各種已知方法之任一者形成,諸如藉由已知用於將非晶形碳層沈積至半導體裝置基板上之各種方法之一者,包含稱為「旋塗」技術之方法及稱為「沈積」方法之方法。沈積方法包含稱為化學氣相沈積方法(CVD)、電漿增強型化學氣相沈積方法(PECVD)、各種類型之物理氣相沈積(PVD)技術及類似者之方法。僅作為一個單一實例,用於形成非晶形碳層之一個有用技術可為藉由運用碳氫化合物前驅體使用PECVD程序,該等碳氫化合物前驅體諸如甲烷(CH4
)、丙烯(C3
H6
)、丙炔(C3
H4
)、丙烷(C3
H8
)、丁烷(C4
H10
)、丁烯(C4
H8
)、丁二烯(C4
H6
)、乙炔(C2
H2
)、甲苯(C7
H8
(C6
H5
CH3
))及其等與硼源之混合物。其他技術(例如,「旋塗」技術)亦為已知的且可用於施覆根據本描述之非晶形碳層。
在硼摻雜步驟之前,非晶形碳層可含有有用量之碳,諸如至少50重量%、80重量%、90重量%、95重量%或99重量%碳的碳量。在摻雜步驟之前,非晶形碳層可未經硼摻雜,此意謂非晶形碳層較佳含有不多於非實質量之碳,諸如小於1重量%,例如小於0.5重量%、0.1重量%或0.05重量%之硼。基於層中之碳之總量,非晶形碳層亦可含有包含sp1、sp2及sp3鍵結態之至少50重量%之碳,此給予非晶形材料所已知之非晶形碳性質,諸如熱解、石墨及類金剛石碳所典型之性質組合。因為非晶形碳材料可含有各種比例之複數個鍵結態,所以碳材料將缺乏長程有序且被視為「非晶形」。
非晶形碳層可均勻地放置至微電子裝置基板上且可具有將在執行所要基板蝕刻步驟時有用之任何厚度。有用厚度之實例可低於10微米,例如自0.5微米至5微米,諸如自1微米至3微米。
再次參考圖1,有用方法10中之下一步驟16 (步驟15將在下文論述)係藉由蝕刻步驟在未經摻雜之非晶形碳層中形成開口。此步驟有時可被稱為「遮罩蝕刻」步驟。在遮罩蝕刻步驟期間形成之開口係經選擇以容許隨後蝕刻開口下方之基板之材料同時保護保持被非晶形碳層108覆蓋之基板之材料的開口。已知用於蝕刻未經摻雜之非晶形碳材料之有用技術之各種實例。一個實例係藉由以下步驟執行:在非晶形碳層上方施覆光微影(聚合)遮罩;在光微影遮罩中形成開口以曝露下層非晶形碳層之部分;及使用基於氧電漿之乾式蝕刻步驟以穿過光微影遮罩之開口在非晶形碳層中形成開口。在於非晶形碳層中形成開口之後,移除光微影遮罩。圖2B繪示包含此等特徵之工件100,包含藉由光微影遮蔽及蝕刻步驟形成於非晶形碳層108中之開口110。
如圖1處展示,遮罩蝕刻步驟之後之下一步驟(步驟18)係用硼摻雜經蝕刻非晶形碳層108 (即,以硼作為摻雜劑摻雜非晶形碳層108 (其包含開口110))之步驟。摻雜步驟係使用射束線摻雜技術執行,此意謂藉由用硼離子射束轟擊非晶形碳層而將硼添加至非晶形碳。在此項技術中熟知硼摻雜源。例如但不限於BF3
、濃化BF3
、B2
H6
、濃化B2
H6
及此項技術中已知之類似硼摻雜劑。其他類型之摻雜方法亦為已知的且可用於將諸如硼之摻雜劑材料添加至非晶形碳層,例如電漿浸沒方法以及沈積方法(CVD或PECVD)。但該等其他類型之摻雜方法將產生包含分佈在整個層之整個厚度內之實質上均勻量之硼的經硼摻雜之非晶形碳層;經摻雜非晶形碳層之上部部分處之硼濃度與經摻雜非晶形碳層之下部部分處之硼濃度實質上相同。相比之下,如本文中描述,使用離子植入作為將硼添加至先前形成之非晶形碳層之方法可將較大濃度之硼放置於非晶形碳層之上部部分處且將較低濃度之硼放置於非晶形碳層之下部部分處。
因為可在非晶形碳層之上部部分處選擇性地包含硼,所以上部部分有利地展現實質上改良之抗蝕刻性。同時,非晶形碳層之下部部分(其在基板蝕刻步驟結束時將保持存在於基板表面處且因此必須被移除)含有較低濃度之硼且與包含較高濃度之硼之經硼摻雜之非晶形碳層相比可更容易移除。
參考圖2C,其繪示在藉由離子植入技術用硼摻雜非晶形碳層108之步驟之後之包含具有開口110之非晶形碳層108的工件100。藉由垂直虛線112表示已植入至非晶形碳層108中之硼。如所繪示,非晶形碳層108之上部部分114比下部部分116包含更高量(即,更高濃度)之硼,下部部分116含有較低量(濃度)之硼作為摻雜劑。
可藉由使用離子植入摻雜技術來製備經硼摻雜之非晶形碳層(例如,如圖2C處展示)以含有將可用於增加非晶形碳層之化學抗性而用作基板蝕刻步驟中之硬遮罩的一定量之硼。特定言之,非晶形碳層之上部部分可包含一定量之硼摻雜劑以引起層之該部分展現對基板蝕刻步驟中所使用之蝕刻劑之改良的抗性(相對於相當未經硼摻雜之層)。非晶形碳層之下部部分不需要含有足以增加非晶形碳材料對化學蝕刻劑之抗性之硼濃度,且較佳與層之上部部分相比含有較低濃度之硼,以有利於在基板蝕刻步驟之後自基板移除層之下部部分。
關於整個經硼摻雜之非晶形碳層,硼之總量可為(在層之上部部分處具有較高濃度之硼)將有效地提供對蝕刻劑溶液之所要化學抗性程度之量。作為摻雜劑之硼之有用量之實例可為基於在摻雜步驟之後之非晶形碳層之整個量之總重量,在自1重量%至約25重量%之範圍內之量,例如自2重量%或5重量%之硼至18重量%或20重量%之硼。經硼摻雜之非晶形碳層之材料之餘額可實質上為碳或完全為碳。
在有用及較佳實例中,經硼摻雜之非晶形碳層可包括碳及硼、由碳及硼組成或本質上由碳及硼組成,且可主要含有碳及硼,例如基於在碳摻雜步驟之後之非晶形碳層之總重量,至少80重量%、90重量%、95重量%或99重量%之組合量之碳及硼。本質上由碳及硼組成之經硼摻雜之非晶形碳層係含有除碳及硼以外的少於非實質量之材料(例如,除碳及硼以外的不多於5重量%、2重量%、1重量%、0.5重量%、0.1重量%或0.05重量%之任何材料(總共))之層。
根據本描述,經硼摻雜之非晶形碳層亦經退火。退火步驟涉及在摻雜步驟期間或之後將基板及經硼摻雜之非晶形碳層加熱至高溫使得將影響完整經硼摻雜之碳硬遮罩之非晶形結構,以改良作為硬遮罩之經硼摻雜之非晶形碳層之效能性質。可期望使經硼摻雜之非晶形碳層退火可有效地引起經硼摻雜之非晶形碳之非晶形結構實體地改變,使得減少非晶形結構中之瑕疵之數目且改良材料對化學蝕刻劑之抗性。退火步驟可改良非晶形碳材料及非晶形碳層之強度,且較佳增加非晶形碳材料對諸如蝕刻劑之化學材料之抗性。
在藉由離子植入將硼離子添加至非晶形碳層時,可藉由在離子束植入期間加熱基板而在離子束硼植入步驟期間執行較佳退火步驟。
退火步驟之時序及溫度可為對於改良經硼摻雜之非晶形碳材料之性質有用之任何時序及溫度。有用溫度之實例可在至少攝氏125度直至攝氏400度之範圍內,例如自攝氏150度至攝氏400度。用於退火步驟之時間量(意謂將基板加熱至在此範圍內之溫度之時間量)可為將在完成離子植入步驟之後運用選用連續加熱產生所要退火效應(諸如藉由在離子植入步驟之持續時間內使用連續加熱至退火溫度)之任何時間量。
描述為「經退火」之經硼摻雜之非晶形碳材料係已曝露於高溫(如描述為退火步驟之部分)以引起退火步驟之所描述效應之一或多者(諸如非晶形碳材料之非晶形結構之改變或例如對蝕刻劑之經改良化學抗性)之材料。
可藉由將離子束以垂直方式(即,與基板之中心軸對準)或以相對於中心軸之角度引導朝向基板而執行離子植入方法。作為實例,將離子植入射束以一角度引導朝向基板可引起離子(即,硼)撞擊在非晶形碳層之上表面上且至形成於非晶形碳層中之開口(例如,圖2A及圖2B之開口110)之側表面上,而未撞擊在定位於開口之底部處之下層微電子裝置基板之材料(例如,圖2B及圖2C之薄膜堆疊層104之上表面)上。可基於形成於非晶形硬遮罩層中之開口之大小(例如,直徑)且基於硬遮罩層之厚度判定離子植入射束相對於基板之有用角度。經引導離子束之角度之實例可相對於基板之中心軸自1度至45度,例如自5度至30度。
再次參考圖1,在摻雜非晶形碳硬遮罩層之後,有用方法中之下一步驟係穿過硬遮罩蝕刻下層微電子裝置基板之步驟(20),在本文中有時被稱為「基板蝕刻」步驟。基板蝕刻步驟係將如所描述之含有微電子裝置基板之工件及含有經蝕刻開口之經硼摻雜之非晶形碳硬遮罩層曝露於化學蝕刻劑之步驟,該化學蝕刻劑將以化學方式移除蝕刻劑穿過硬遮罩中之開口接觸之基板之材料。可基於所蝕刻(即,自基板移除)之基板材料之類型選擇蝕刻劑之化學性質。為蝕刻包含由含矽材料(諸如氧化矽、氮化矽、多晶矽等)製成之薄膜堆疊之微電子裝置基板,已知及有用化學蝕刻劑包含諸如氟基蝕刻劑之氣態材料,包含含有一或多種氣態氟碳化合物或全氟碳化物(諸如CHF3
、CF4
、CH3
F、C4
F6
等)之蝕刻劑。如本文中在別處描述,本描述之經硼摻雜之非晶形碳硬遮罩層有效地作為硬遮罩以保護基板之部分在基板蝕刻步驟期間不被蝕刻。蝕刻劑仍(如圖2D處展示)將具有在蝕刻基板之步驟期間自硬遮罩層移除一定量之材料之效應。通常,在基板蝕刻步驟期間,硬遮罩層之上部部分之實質量將被蝕刻劑移除,且在完成基板蝕刻步驟之後,硬遮罩層之原始量(厚度)之下部部分將剩餘。
圖2D處繪示已藉由基板蝕刻步驟處理之工件100。如所展示,工件100包含薄膜堆疊104,其現在包含開口,例如垂直延伸穿過薄膜堆疊104之整個深度(厚度)之「通道孔」120。工件100亦在薄膜堆疊104之頂部上包含非晶形碳層108之剩餘下部部分116。此剩餘下部部分116可含有一定量之硼作為摻雜劑,但較佳地,硼之量小於在完成離子植入步驟之後存在於層108之上部部分114中之硼之量。存在於下部部分116中之硼摻雜劑之量亦較佳為足夠低使得可藉由通常用於移除未經硼摻雜之非晶形碳硬遮罩層之已知方法(例如,藉由僅使用氧作為蝕刻劑之標準氧電漿蝕刻步驟)自薄膜堆疊104 (或另一基板)有效率地且完全地移除下部部分116之量。
再次參考圖1,在包含藉由蝕刻形成開口120之步驟20之後,必須在可執行微電子裝置基板之額外處理之前自基板移除(步驟22)非晶形碳層108之剩餘部分。
根據本發明之另一方法被展示為包含來自圖1之選用步驟15,其中在非晶形碳層之頂部上形成圖案化遮罩。此遮罩可為此項技術中已知之任何碳遮罩。圖3A至圖3C展示在圖1中用圖案化遮罩之額外步驟描述之方法之第一部分。圖3A類似於如上文論述之圖2A。圖3B展示碳非晶形層之部分上之圖案化遮罩。明確言之,圖案化遮罩301在稍後蝕刻之碳非晶形層之部分上。此後,在步驟3C中,使用熟知離子植入方法用硼摻雜302圖案化遮罩及碳非晶形層。該方法繼續至圖2C至圖2E中描繪之步驟16至22。
在本發明之某些實施例中,硼經摻雜以在碳非晶形層中具有梯度分佈。因而,本描述之非晶形碳層之下部部分與層之上部部分相比含有較低量之硼,非晶形碳層之下部部分不具有對化學蝕刻劑之實質上增加的抗性(相對於未經硼摻雜之非晶形碳層)且與本描述之經摻雜非晶形碳層之更高度硼摻雜之上部部分相比較不難以藉由蝕刻步驟移除。可期望可藉由通常用於自製程中微電子裝置基板移除非晶形碳硬遮罩材料之目的之標準方法移除非晶形碳層之下部部分(其係在基板蝕刻步驟之後之層之剩餘部分)。
在本發明之其他實施例中,如圖3中展示,在整個碳非晶形層內以一致方法(參見302)摻雜硼。
在本發明之進一步細節中,標準方法之實例係用氧電漿進行處置,即,「氧電漿蝕刻」。氧電漿蝕刻涉及使用氧源及電漿系統,且無需除氣態氧以外的任何實質量之額外化學蝕刻劑(可包含諸如緩衝劑之非蝕刻劑材料)。出於各種原因,已知有時可藉由將一或多種額外化學蝕刻劑材料添加至氧作為蝕刻劑以增加侵蝕性或蝕刻速率而修改氧電漿蝕刻技術。此等額外化學蝕刻劑材料之實例包含含氟氣體,諸如CF4
、SF6
、氣態氫(H2
)或任何此等材料之組合。
因此,根據所描述經硼摻雜之非晶形碳硬遮罩之較佳實例,本描述之較佳硬遮罩係在完成基板蝕刻步驟之後將作為剩餘部分存在於基板表面處之硬遮罩,能夠藉由包含使用氧作為蝕刻劑材料且不需要任何其他化學蝕刻劑之標準氧電漿方法自基板移除該剩餘部分。移除非晶形碳層之剩餘部分之此步驟可包含使用一或多種其他非蝕刻劑材料(諸如pH緩衝劑),但不需要且較佳可排除除氧以外的任何蝕刻劑材料(特別是更具侵蝕性之蝕刻劑材料,諸如CF4
、SF6
或H2
)之存在;即,可藉由實質上僅使用氧作為蝕刻劑之氧電漿蝕刻步驟自下層微電子裝置基板移除硬遮罩之剩餘下部部分,此意謂該程序使用至少95 (體積)%、98 (體積)%或99 (體積)%之氣態氧作為蝕刻劑及不多於1體積%、2體積%或5體積%之任何其他蝕刻劑,例如不多於1體積%、2體積%或5體積%之CF4
、SF6
、H2
,或CF4
、SF6
及H2
之兩者或更多者之組合。
10:方法
12:步驟
14:步驟
15:步驟
16:步驟
18:步驟
20:步驟
22:步驟
100:工件
102:支撐件
104:薄膜堆疊/薄膜堆疊層
106:微電子材料層
108:非晶形碳層
110:開口
112:垂直虛線
114:上部部分
116:下部部分
120:通道孔/開口
301:圖案化遮罩
302:用硼摻雜
圖1展示如所描述之用於形成及使用經硼摻雜之碳硬遮罩之方法之實例。
圖2A至圖2E展示所描述且存在於本描述之方法之某些步驟期間之各種微電子裝置基板結構之實例。
圖3A至圖3C描繪包含在蝕刻層之前運用遮罩圖案化碳非晶形層之選用步驟之另外各種微電子裝置基板。
圖式係示意性的且不按比例。
10:方法
12:步驟
14:步驟
15:步驟
16:步驟
18:步驟
20:步驟
22:步驟
Claims (10)
- 一種製備微電子裝置基板之方法,該方法包括: 藉由離子植入將硼植入至基板之非晶形碳硬遮罩層中,該基板包括微電子裝置之一或多個層及頂表面處之該非晶形碳硬遮罩層;及 使該非晶形碳硬遮罩層退火。
- 如請求項1之方法,其中在退火之後,該經硼摻雜之非晶形碳硬遮罩層與尚未退火之相當經硼摻雜之非晶形碳硬遮罩層之抗蝕刻性相比具有增加的抗蝕刻性。
- 如請求項1之方法,其包括在該非晶形碳硬遮罩層之厚度之上部部分處以相對較高濃度植入該硼,且在該厚度之下部部分處以相對較低濃度植入該硼。
- 如請求項1之方法,其包括在該硼之離子植入期間使該非晶形碳硬遮罩層退火。
- 如請求項1之方法,其包括在退火期間將該基板加熱至在自攝氏150度至攝氏400度之範圍內之溫度。
- 如請求項1之方法,其中該非晶形碳硬遮罩層具有在自0.5微米至5微米之範圍內之厚度。
- 如請求項1之方法,其包括在藉由離子植入植入該硼之前,蝕刻該非晶形碳硬遮罩層以在該非晶形碳硬遮罩層中形成開口。
- 如請求項1之方法,其包括:在該非晶形碳硬遮罩層上形成圖案化遮罩;及在藉由離子植入植入該硼之前,蝕刻該非晶形碳硬遮罩層以在該非晶形碳硬遮罩層中形成開口。
- 如請求項1之方法,其中該基板包括包含多個含矽材料層之薄膜堆疊。
- 一種微電子裝置基板,其包括: 微電子裝置之一或多個層; 經硼摻雜之硬遮罩層,其在該一或多個層之上表面上,且包括接觸該微電子裝置之該上表面之第一表面、曝露表面、在該第一表面與該曝露表面之間之厚度及延伸穿過該厚度之開口; 該經硼摻雜之硬遮罩層包括非晶形碳及植入硼,其中該硼以相對較高濃度存在於該非晶形碳硬遮罩層之厚度之上部部分處,且以相對較低濃度存在於該厚度之下部部分處,且該經硼摻雜之硬遮罩層經退火。
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US (1) | US11049728B2 (zh) |
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JP (1) | JP7025600B2 (zh) |
KR (1) | KR102336347B1 (zh) |
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2019
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- 2019-10-21 EP EP19877777.3A patent/EP3874536A4/en active Pending
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Also Published As
Publication number | Publication date |
---|---|
JP2021530119A (ja) | 2021-11-04 |
US20200135485A1 (en) | 2020-04-30 |
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