JP2004207715A5 - - Google Patents
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- Publication number
- JP2004207715A5 JP2004207715A5 JP2003414146A JP2003414146A JP2004207715A5 JP 2004207715 A5 JP2004207715 A5 JP 2004207715A5 JP 2003414146 A JP2003414146 A JP 2003414146A JP 2003414146 A JP2003414146 A JP 2003414146A JP 2004207715 A5 JP2004207715 A5 JP 2004207715A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- pattern
- semiconductor device
- manufacturing
- layer pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 22
- 239000004065 semiconductor Substances 0.000 claims 16
- 238000005530 etching Methods 0.000 claims 15
- 238000004519 manufacturing process Methods 0.000 claims 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 6
- 239000010936 titanium Substances 0.000 claims 6
- 229910052719 titanium Inorganic materials 0.000 claims 6
- 238000009832 plasma treatment Methods 0.000 claims 5
- 229910052786 argon Inorganic materials 0.000 claims 4
- 239000007795 chemical reaction product Substances 0.000 claims 4
- 239000000047 product Substances 0.000 claims 4
- 239000000956 alloy Substances 0.000 claims 3
- 229910045601 alloy Inorganic materials 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003414146A JP4666907B2 (ja) | 2002-12-13 | 2003-12-12 | 半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002361924 | 2002-12-13 | ||
| JP2003414146A JP4666907B2 (ja) | 2002-12-13 | 2003-12-12 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004207715A JP2004207715A (ja) | 2004-07-22 |
| JP2004207715A5 true JP2004207715A5 (enExample) | 2007-01-18 |
| JP4666907B2 JP4666907B2 (ja) | 2011-04-06 |
Family
ID=32828635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003414146A Expired - Fee Related JP4666907B2 (ja) | 2002-12-13 | 2003-12-12 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4666907B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104867983A (zh) * | 2015-04-13 | 2015-08-26 | 北京大学 | 一种LDD/Offset结构薄膜晶体管及其制备方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4939690B2 (ja) * | 2001-01-30 | 2012-05-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4854866B2 (ja) * | 2001-04-27 | 2012-01-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2003
- 2003-12-12 JP JP2003414146A patent/JP4666907B2/ja not_active Expired - Fee Related
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