JP2007511087A5 - - Google Patents

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Publication number
JP2007511087A5
JP2007511087A5 JP2006539499A JP2006539499A JP2007511087A5 JP 2007511087 A5 JP2007511087 A5 JP 2007511087A5 JP 2006539499 A JP2006539499 A JP 2006539499A JP 2006539499 A JP2006539499 A JP 2006539499A JP 2007511087 A5 JP2007511087 A5 JP 2007511087A5
Authority
JP
Japan
Prior art keywords
contact hole
layer
native oxide
sidewall
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006539499A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007511087A (ja
JP4662943B2 (ja
Filing date
Publication date
Priority claimed from US10/705,631 external-priority patent/US7005387B2/en
Application filed filed Critical
Publication of JP2007511087A publication Critical patent/JP2007511087A/ja
Publication of JP2007511087A5 publication Critical patent/JP2007511087A5/ja
Application granted granted Critical
Publication of JP4662943B2 publication Critical patent/JP4662943B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2006539499A 2003-11-08 2004-10-08 コンタクトの形成中、コンタクトホール幅の増大を防ぐ方法 Expired - Fee Related JP4662943B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/705,631 US7005387B2 (en) 2003-11-08 2003-11-08 Method for preventing an increase in contact hole width during contact formation
PCT/US2004/033417 WO2005048342A1 (en) 2003-11-08 2004-10-08 Method for preventing an increase in contact hole width during contact formation

Publications (3)

Publication Number Publication Date
JP2007511087A JP2007511087A (ja) 2007-04-26
JP2007511087A5 true JP2007511087A5 (enExample) 2007-11-29
JP4662943B2 JP4662943B2 (ja) 2011-03-30

Family

ID=34552414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006539499A Expired - Fee Related JP4662943B2 (ja) 2003-11-08 2004-10-08 コンタクトの形成中、コンタクトホール幅の増大を防ぐ方法

Country Status (8)

Country Link
US (1) US7005387B2 (enExample)
JP (1) JP4662943B2 (enExample)
KR (1) KR101180977B1 (enExample)
CN (1) CN1883045A (enExample)
DE (1) DE112004002156T5 (enExample)
GB (1) GB2423635B (enExample)
TW (1) TWI359475B (enExample)
WO (1) WO2005048342A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080038910A1 (en) * 2006-08-10 2008-02-14 Advanced Micro Devices, Inc. Multiple lithography for reduced negative feature corner rounding
US20090050471A1 (en) * 2007-08-24 2009-02-26 Spansion Llc Process of forming an electronic device including depositing layers within openings
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
JP6494940B2 (ja) * 2013-07-25 2019-04-03 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 異なるサイズのフィーチャへのボイドフリータングステン充填
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
KR102607331B1 (ko) * 2018-07-13 2023-11-29 에스케이하이닉스 주식회사 고종횡비 구조를 위한 갭필 방법 및 그를 이용한 반도체장치 제조 방법
DE112023002169T5 (de) 2023-01-05 2025-02-27 Fuji Electric Co., Ltd. Halbleitervorrichtung und Herstellungsverfahren dafür

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0513411A (ja) * 1991-07-02 1993-01-22 Nec Corp 半導体装置の製造方法
JPH0661181A (ja) 1992-08-11 1994-03-04 Sony Corp バリアメタルの形成方法
JP3237917B2 (ja) * 1992-09-22 2001-12-10 沖電気工業株式会社 半導体素子の製造方法
JPH06349824A (ja) * 1993-06-10 1994-12-22 Toshiba Corp 半導体装置の製造方法
JPH09116009A (ja) * 1995-10-23 1997-05-02 Sony Corp 接続孔の形成方法
JPH09139358A (ja) * 1995-11-13 1997-05-27 Sony Corp 半導体装置の製造方法
US5985762A (en) * 1997-05-19 1999-11-16 International Business Machines Corporation Method of forming a self-aligned copper diffusion barrier in vias
TW388095B (en) * 1997-05-20 2000-04-21 United Microelectronics Corp Method for improving planarization of dielectric layer in interconnect metal process
JP3201318B2 (ja) * 1997-11-05 2001-08-20 日本電気株式会社 半導体装置の製造方法
US5994211A (en) * 1997-11-21 1999-11-30 Lsi Logic Corporation Method and composition for reducing gate oxide damage during RF sputter clean
US6303505B1 (en) * 1998-07-09 2001-10-16 Advanced Micro Devices, Inc. Copper interconnect with improved electromigration resistance
US6511575B1 (en) * 1998-11-12 2003-01-28 Canon Kabushiki Kaisha Treatment apparatus and method utilizing negative hydrogen ion
KR100277086B1 (ko) * 1999-01-02 2000-12-15 윤종용 반도체 장치 및 그 제조 방법
JP4221859B2 (ja) * 1999-02-12 2009-02-12 株式会社デンソー 半導体装置の製造方法
US6348709B1 (en) * 1999-03-15 2002-02-19 Micron Technology, Inc. Electrical contact for high dielectric constant capacitors and method for fabricating the same
JP2000323571A (ja) * 1999-05-14 2000-11-24 Sony Corp 半導体装置の製造方法
KR100316721B1 (ko) * 2000-01-29 2001-12-12 윤종용 실리사이드막을 구비한 반도체소자의 제조방법
KR20010077743A (ko) * 2000-02-08 2001-08-20 박종섭 비트 라인 및 그 제조 방법
US6498091B1 (en) * 2000-11-01 2002-12-24 Applied Materials, Inc. Method of using a barrier sputter reactor to remove an underlying barrier layer
US6624066B2 (en) 2001-02-14 2003-09-23 Texas Instruments Incorporated Reliable interconnects with low via/contact resistance
US20030073304A1 (en) * 2001-10-16 2003-04-17 Applied Materials, Inc. Selective tungsten stud as copper diffusion barrier to silicon contact

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