JP2006270032A5 - - Google Patents
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- Publication number
- JP2006270032A5 JP2006270032A5 JP2005278844A JP2005278844A JP2006270032A5 JP 2006270032 A5 JP2006270032 A5 JP 2006270032A5 JP 2005278844 A JP2005278844 A JP 2005278844A JP 2005278844 A JP2005278844 A JP 2005278844A JP 2006270032 A5 JP2006270032 A5 JP 2006270032A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cleaning
- layer
- deposit
- mixed gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 60
- 238000004140 cleaning Methods 0.000 claims 47
- 229920002120 photoresistant polymer Polymers 0.000 claims 24
- 238000000034 method Methods 0.000 claims 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 16
- 239000007789 gas Substances 0.000 claims 15
- 238000010438 heat treatment Methods 0.000 claims 15
- 238000001035 drying Methods 0.000 claims 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 11
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 11
- 229910021529 ammonia Inorganic materials 0.000 claims 8
- 238000004381 surface treatment Methods 0.000 claims 8
- 238000005530 etching Methods 0.000 claims 7
- 239000000126 substance Substances 0.000 claims 7
- 239000000243 solution Substances 0.000 claims 6
- 239000007788 liquid Substances 0.000 claims 4
- 238000005406 washing Methods 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005108 dry cleaning Methods 0.000 claims 1
- 230000002209 hydrophobic effect Effects 0.000 claims 1
- 230000005661 hydrophobic surface Effects 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005278844A JP4895256B2 (ja) | 2005-02-23 | 2005-09-26 | 基板の表面処理方法 |
| TW095105956A TWI398920B (zh) | 2005-02-23 | 2006-02-22 | Surface treatment of substrates |
| KR1020060017330A KR100832164B1 (ko) | 2005-02-23 | 2006-02-22 | 기판 표면 처리 방법, 기판 세정 방법 및 프로그램을기록한 기록 매체 |
| EP06003683.7A EP1696476B1 (en) | 2005-02-23 | 2006-02-23 | Method of surface processing substrate, method of cleaning substrate, and programs for implementing the methods |
| US11/359,378 US20060196527A1 (en) | 2005-02-23 | 2006-02-23 | Method of surface processing substrate, method of cleaning substrate, and programs for implementing the methods |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005047361 | 2005-02-23 | ||
| JP2005047361 | 2005-02-23 | ||
| JP2005278844A JP4895256B2 (ja) | 2005-02-23 | 2005-09-26 | 基板の表面処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006270032A JP2006270032A (ja) | 2006-10-05 |
| JP2006270032A5 true JP2006270032A5 (enExample) | 2008-11-06 |
| JP4895256B2 JP4895256B2 (ja) | 2012-03-14 |
Family
ID=36636246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005278844A Expired - Fee Related JP4895256B2 (ja) | 2005-02-23 | 2005-09-26 | 基板の表面処理方法 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1696476B1 (enExample) |
| JP (1) | JP4895256B2 (enExample) |
| KR (1) | KR100832164B1 (enExample) |
| TW (1) | TWI398920B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100854455B1 (ko) * | 2006-06-30 | 2008-08-27 | 주식회사 하이닉스반도체 | 반도체 소자의 워터마크 제거방법 |
| JP5143808B2 (ja) | 2009-10-08 | 2013-02-13 | 本田技研工業株式会社 | 撮像装置、撮像システム及び演算方法 |
| JP5424848B2 (ja) | 2009-12-15 | 2014-02-26 | 株式会社東芝 | 半導体基板の表面処理装置及び方法 |
| KR101271248B1 (ko) * | 2011-08-02 | 2013-06-07 | 주식회사 유진테크 | 에피택셜 공정을 위한 반도체 제조설비 |
| US9461144B2 (en) * | 2014-06-13 | 2016-10-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for semiconductor device fabrication |
| JP6934376B2 (ja) * | 2017-09-20 | 2021-09-15 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| KR102434297B1 (ko) * | 2018-01-09 | 2022-08-18 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 방법 및 기판 처리 장치 |
| CN108447774B (zh) * | 2018-03-29 | 2023-05-26 | 长鑫存储技术有限公司 | 同时去除热氧化膜和去除沉积氧化膜的方法及设备 |
| CN117157737A (zh) * | 2022-03-30 | 2023-12-01 | 雅马哈智能机器控股株式会社 | 电子零件清洗装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6345822A (ja) * | 1986-08-13 | 1988-02-26 | Hitachi Ltd | クリ−ニング方法および装置 |
| US5171393A (en) * | 1991-07-29 | 1992-12-15 | Moffat William A | Wafer processing apparatus |
| US5282925A (en) * | 1992-11-09 | 1994-02-01 | International Business Machines Corporation | Device and method for accurate etching and removal of thin film |
| JPH06163508A (ja) * | 1992-11-27 | 1994-06-10 | Fuji Electric Co Ltd | 基板の乾燥方法および装置 |
| JPH06314679A (ja) * | 1993-04-30 | 1994-11-08 | Sony Corp | 半導体基板の洗浄方法 |
| JPH06337193A (ja) * | 1993-05-27 | 1994-12-06 | Tokyo Hightech Kk | 真空乾燥装置 |
| JPH0969509A (ja) * | 1995-09-01 | 1997-03-11 | Matsushita Electron Corp | 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法 |
| JP2927768B1 (ja) | 1998-03-26 | 1999-07-28 | 技術研究組合オングストロームテクノロジ研究機構 | 半導体装置およびその製造方法 |
| US5932022A (en) * | 1998-04-21 | 1999-08-03 | Harris Corporation | SC-2 based pre-thermal treatment wafer cleaning process |
| US6486072B1 (en) * | 2000-10-23 | 2002-11-26 | Advanced Micro Devices, Inc. | System and method to facilitate removal of defects from a substrate |
| KR100416592B1 (ko) * | 2001-02-10 | 2004-02-05 | 삼성전자주식회사 | 매엽식 웨이퍼 세정 장치 및 이를 이용한 웨이퍼 세정 방법 |
| JP3421329B2 (ja) * | 2001-06-08 | 2003-06-30 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法 |
| JP2003077839A (ja) * | 2001-08-30 | 2003-03-14 | Toshiba Corp | 半導体製造装置のパージ方法及び半導体装置の製造方法 |
| US6858532B2 (en) * | 2002-12-10 | 2005-02-22 | International Business Machines Corporation | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling |
| JP4187540B2 (ja) * | 2003-01-31 | 2008-11-26 | 大日本スクリーン製造株式会社 | 基板処理方法 |
| JP4039385B2 (ja) * | 2003-04-22 | 2008-01-30 | 東京エレクトロン株式会社 | ケミカル酸化膜の除去方法 |
-
2005
- 2005-09-26 JP JP2005278844A patent/JP4895256B2/ja not_active Expired - Fee Related
-
2006
- 2006-02-22 TW TW095105956A patent/TWI398920B/zh not_active IP Right Cessation
- 2006-02-22 KR KR1020060017330A patent/KR100832164B1/ko not_active Expired - Fee Related
- 2006-02-23 EP EP06003683.7A patent/EP1696476B1/en not_active Not-in-force
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