JP5424848B2 - 半導体基板の表面処理装置及び方法 - Google Patents
半導体基板の表面処理装置及び方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 279
- 239000004065 semiconductor Substances 0.000 title claims description 240
- 238000000034 method Methods 0.000 title claims description 86
- 238000004381 surface treatment Methods 0.000 title claims description 52
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 152
- 239000005871 repellent Substances 0.000 claims description 115
- 230000002940 repellent Effects 0.000 claims description 75
- 239000000126 substance Substances 0.000 claims description 67
- 230000001681 protective effect Effects 0.000 claims description 62
- 230000008569 process Effects 0.000 claims description 57
- 238000001035 drying Methods 0.000 claims description 47
- 238000004140 cleaning Methods 0.000 claims description 37
- 238000012545 processing Methods 0.000 claims description 32
- 239000003795 chemical substances by application Substances 0.000 claims description 22
- 238000007254 oxidation reaction Methods 0.000 claims description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000012546 transfer Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 162
- 239000000243 solution Substances 0.000 description 54
- 239000006087 Silane Coupling Agent Substances 0.000 description 21
- 239000007788 liquid Substances 0.000 description 21
- 230000032258 transport Effects 0.000 description 17
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 15
- 239000011162 core material Substances 0.000 description 9
- 230000001590 oxidative effect Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 239000008155 medical solution Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000000352 supercritical drying Methods 0.000 description 2
- 238000013518 transcription Methods 0.000 description 2
- 230000035897 transcription Effects 0.000 description 2
- ZTHXGSSBOFYPTH-UHFFFAOYSA-N N-ethyl-N-methylsilylethanamine Chemical compound CCN(CC)[SiH2]C ZTHXGSSBOFYPTH-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000006884 silylation reaction Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002352 surface water Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Description
上記第1の実施形態で説明したように、半導体基板W(凸形状パターン)におけるOH基数が多い程、半導体基板W(凸形状パターン)表面の撥水度が増す。本実施形態では、ステップS202における洗浄処理時に酸化力の強い薬液を用いているため、半導体基板W(凸形状パターン)におけるOH基数は多くなっている。
上記第1の実施形態で説明したように、半導体基板W(凸形状パターン)におけるOH基数が多い程、半導体基板W(凸形状パターン)表面の撥水度が増す。本実施形態では、ステップS404におけるUV光照射により、半導体基板W(凸形状パターン)におけるOH基数は多くなっている。
102 搬送部
103 薬液供給部
104 純水供給部
105 IPA供給部
106 撥水化剤供給部
107 気体供給部
108 撥水化膜除去部
Claims (9)
- 表面にシリコンを含む凸形状パターンが形成された半導体基板を保持する保持部と、
前記半導体基板の表面に薬液を供給し、洗浄及び酸化を行う第1供給部と、
前記半導体基板の表面に純水を供給し、前記半導体基板をリンスする第2供給部と、
前記半導体基板の表面に撥水化剤を供給し、前記凸形状パターンの表面に撥水性保護膜を形成する第3供給部と、
前記半導体基板を乾燥させる乾燥処理部と、
前記凸形状パターンを残存させて前記撥水性保護膜を除去する除去部と、
を備え、
前記第2供給部は、前記第1供給部による前記半導体基板の洗浄及び酸化後に、前記半導体基板の第1リンスを行い、
前記第3供給部は、前記第1リンス後に、前記撥水性保護膜を形成し、
前記第2供給部は、前記撥水性保護膜の形成後に、前記半導体基板の第2リンスを行い、
前記乾燥処理部は、前記第2リンス後に前記半導体基板を乾燥させることを特徴とする半導体基板の表面処理装置。 - 前記第1供給部は、前記薬液を加熱する加熱部を有することを特徴とする請求項1に記載の半導体基板の表面処理装置。
- 前記第1リンス後かつ前記撥水性保護膜の形成前、又は前記撥水性保護膜の形成後かつ前記第2リンス前に、前記半導体基板の表面にアルコールを供給し、前記半導体基板をリンスする第4供給部をさらに備えることを特徴とする請求項1又は2に記載の半導体基板の表面処理装置。
- 表面にシリコンを含む凸形状パターンが形成された半導体基板を保持する保持部と、
前記半導体基板の表面に薬液を供給し、洗浄及び酸化を行う第1供給部と、
前記半導体基板の表面に純水を供給し、前記半導体基板をリンスする第2供給部と、
前記半導体基板の表面に撥水化剤を供給し、前記凸形状パターンの表面に撥水性保護膜を形成する第3供給部と、
前記半導体基板を乾燥させる乾燥処理部と、
前記半導体基板に光を照射し、半導体基板表面の酸化及び前記凸形状パターンを残存させた前記撥水性保護膜の除去を行う除去部と、
を備え、
前記第2供給部は、前記第1供給部による前記半導体基板の洗浄及び酸化後に、前記半導体基板の第1リンスを行い、
前記除去部は、前記第1リンス後に前記半導体基板に光を照射し、前記半導体基板表面を酸化し、
前記第3供給部は、前記除去部による前記半導体基板表面の酸化後に、前記撥水性保護膜を形成し、
前記第2供給部は、前記撥水性保護膜の形成後に、前記半導体基板の第2リンスを行い、
前記乾燥処理部は、前記第2リンス後に前記半導体基板を乾燥させ、
前記除去部は、前記半導体基板の乾燥後に前記撥水性保護膜を除去することを特徴とする半導体基板の表面処理装置。 - 前記乾燥処理部は前記保持部に含まれ、前記保持部は、前記半導体基板のスピン乾燥処理を行うことを特徴とする請求項4に記載の半導体基板の表面処理装置。
- 前記除去部は、純水を吐出する吐出口を有し、前記半導体基板表面の酸化の際に純水を吐出することを特徴とする請求項5に記載の半導体基板の表面処理装置。
- 半導体基板上にシリコンを含む複数の凸形状パターンを形成し、
薬液を用いて前記凸形状パターン表面を洗浄し、
洗浄後に、純水を用いて前記半導体基板をリンスし、
リンス後に、光を照射して前記凸形状パターン表面を酸化し、
前記光が照射された前記凸形状パターン表面に撥水化剤を用いて撥水性保護膜を形成し、
前記撥水性保護膜形成後に、純水を用いて前記半導体基板をリンスし、
前記半導体基板を乾燥させ、
前記凸形状パターンを残存させて前記撥水性保護膜を除去する半導体基板の表面処理方法。 - 前記凸形状パターンは、側壁転写プロセスにより形成することを特徴とする請求項7に記載の半導体基板の表面処理方法。
- 前記凸形状パターンは、前記半導体基板の表面に対して第1角度をなす第1側面と、前記第1側面上に位置し、前記半導体基板の表面に対して前記第1角度とは異なる第2角度をなす第2側面を有することを特徴とする請求項7に記載の半導体基板の表面処理方法。
Priority Applications (5)
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JP2009284347A JP5424848B2 (ja) | 2009-12-15 | 2009-12-15 | 半導体基板の表面処理装置及び方法 |
TW099130213A TWI512806B (zh) | 2009-12-15 | 2010-09-07 | 半導體基板用表面處理裝置及方法 |
KR1020100088288A KR101264481B1 (ko) | 2009-12-15 | 2010-09-09 | 반도체 기판의 표면 처리 장치 및 방법 |
US12/887,332 US20110139192A1 (en) | 2009-12-15 | 2010-09-21 | Surface treatment apparatus and method for semiconductor substrate |
US14/836,881 US10573508B2 (en) | 2009-12-15 | 2015-08-26 | Surface treatment apparatus and method for semiconductor substrate |
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US20110186088A1 (en) * | 2010-01-31 | 2011-08-04 | Miller Kenneth C | Substrate nest with drip remover |
JP5622512B2 (ja) | 2010-10-06 | 2014-11-12 | 株式会社東芝 | 半導体装置の製造方法 |
JP5931428B2 (ja) | 2011-12-15 | 2016-06-08 | 株式会社東芝 | 配線パターンの形成方法及び半導体装置 |
JP6148475B2 (ja) * | 2013-01-25 | 2017-06-14 | 株式会社東芝 | 半導体製造装置および半導体装置の製造方法 |
JP6770887B2 (ja) | 2016-12-28 | 2020-10-21 | 株式会社Screenホールディングス | 基板処理装置および基板処理システム |
KR20210024021A (ko) * | 2018-06-27 | 2021-03-04 | 도쿄엘렉트론가부시키가이샤 | 기판 세정 방법, 기판 세정 시스템 및 기억 매체 |
US11094527B2 (en) | 2018-10-10 | 2021-08-17 | International Business Machines Corporation | Wet clean solutions to prevent pattern collapse |
IT201900002485A1 (it) * | 2019-02-20 | 2020-08-20 | Protim S R L | Procedimento di rivestimento di pezzi |
CN113394074A (zh) * | 2020-03-11 | 2021-09-14 | 长鑫存储技术有限公司 | 半导体结构的处理方法 |
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US10573508B2 (en) | 2020-02-25 |
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JP2011129583A (ja) | 2011-06-30 |
TW201133585A (en) | 2011-10-01 |
KR20110068825A (ko) | 2011-06-22 |
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US20110139192A1 (en) | 2011-06-16 |
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