JP5404361B2 - 半導体基板の表面処理装置及び方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims description 191
- 239000004065 semiconductor Substances 0.000 title claims description 124
- 238000000034 method Methods 0.000 title claims description 84
- 238000004381 surface treatment Methods 0.000 title claims description 44
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 107
- 239000005871 repellent Substances 0.000 claims description 68
- 230000001681 protective effect Effects 0.000 claims description 49
- 239000000126 substance Substances 0.000 claims description 42
- 238000001035 drying Methods 0.000 claims description 40
- 230000002940 repellent Effects 0.000 claims description 39
- 238000004140 cleaning Methods 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000003795 chemical substances by application Substances 0.000 claims description 15
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 230000002378 acidificating effect Effects 0.000 claims description 12
- 239000001569 carbon dioxide Substances 0.000 claims description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 201
- 230000008569 process Effects 0.000 description 57
- 239000007788 liquid Substances 0.000 description 33
- 239000000243 solution Substances 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 239000006087 Silane Coupling Agent Substances 0.000 description 10
- 239000011162 core material Substances 0.000 description 9
- 238000012546 transfer Methods 0.000 description 9
- 230000032258 transport Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010828 elution Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000006884 silylation reaction Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000013518 transcription Methods 0.000 description 2
- 230000035897 transcription Effects 0.000 description 2
- ZTHXGSSBOFYPTH-UHFFFAOYSA-N N-ethyl-N-methylsilylethanamine Chemical compound CCN(CC)[SiH2]C ZTHXGSSBOFYPTH-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000002352 surface water Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
200 希釈IPA供給部
300 薬液等供給部
400 酸性水供給部
Claims (5)
- 表面にシリコンを含む凸形状パターンが形成された半導体基板を保持し、前記半導体基板を回転させる基板保持回転部と、
前記基板保持回転部に保持された前記半導体基板の表面に薬液を供給し、前記半導体基板を洗浄する第1供給部と、
前記基板保持回転部に保持された前記半導体基板の表面に純水を供給し、前記半導体基板をリンスする第2供給部と、
前記基板保持回転部に保持された前記半導体基板の表面に撥水化剤を供給し、前記凸形状パターンの表面に撥水性保護膜を形成する第3供給部と、
前記基板保持回転部に保持された前記半導体基板の表面に純水で希釈したアルコールを供給し、前記半導体基板をリンスする第4供給部と、
前記凸形状パターンを残存させて前記撥水性保護膜を除去する除去部と、
を備え、
前記第2供給部は、前記第1供給部による前記半導体基板の洗浄後に、前記半導体基板のリンスを行い、
前記第3供給部は、前記第2供給部による前記半導体基板のリンス後に、前記撥水性保護膜を形成し、
前記第4供給部は、前記撥水性保護膜の形成後に、前記半導体基板をリンスし、
前記基板保持回転部は、前記純水で希釈したアルコールでリンスされた前記半導体基板を回転させて乾燥処理を行うことを特徴とする半導体基板の表面処理装置。 - 前記除去部は、前記半導体基板に紫外線を照射して前記撥水性保護膜を除去する紫外線照射部であることを特徴とする請求項1に記載の半導体基板の表面処理装置。
- 表面にシリコンを含む凸形状パターンが形成された半導体基板を保持し、前記半導体基板を回転させる基板保持回転部と、
前記基板保持回転部に保持された前記半導体基板の表面に薬液を供給し、前記半導体基板を洗浄する第1供給部と、
前記基板保持回転部に保持された前記半導体基板の表面に純水を供給し、前記半導体基板をリンスする第2供給部と、
前記基板保持回転部に保持された前記半導体基板の表面に撥水化剤を供給し、前記凸形状パターンの表面に撥水性保護膜を形成する第3供給部と、
前記基板保持回転部に保持された前記半導体基板の表面に酸性水を供給し、前記半導体基板をリンスする第4供給部と、
前記凸形状パターンを残存させて前記撥水性保護膜を除去する除去部と、
を備え、
前記第2供給部は、前記第1供給部による前記半導体基板の洗浄後に、前記半導体基板のリンスを行い、
前記第3供給部は、前記第2供給部による前記半導体基板のリンス後に、前記撥水性保護膜を形成し、
前記第4供給部は、前記撥水性保護膜の形成後に、前記半導体基板をリンスし、
前記基板保持回転部は、前記酸性水でリンスされた前記半導体基板を回転させて乾燥処理を行うことを特徴とする半導体基板の表面処理装置。 - 前記第4供給部は、
純水を供給する第1供給ラインと、
二酸化炭素ガスを供給する第2供給ラインと、
前記第1供給ラインから純水が供給され、前記第2供給ラインから二酸化炭素ガスが供給され、炭酸水を排出する二酸化炭素溶解膜と、
前記炭酸水を前記半導体基板の表面に吐出するノズルと、
を有することを特徴とする請求項3に記載の半導体基板の表面処理装置。 - 半導体基板上に複数のシリコンを含む凸形状パターンを形成し、
薬液を用いて前記凸形状パターン表面を洗浄し、
洗浄した前記凸形状パターン表面に撥水化剤を用いて撥水性保護膜を形成し、
前記撥水性保護膜形成後に、酸性水又は希釈したアルコールを用いて、前記半導体基板をリンスし、
リンスした前記半導体基板を乾燥させ、
前記乾燥後に、前記凸形状パターンを残存させて前記撥水性保護膜を除去する半導体基板の表面処理方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2009281346A JP5404361B2 (ja) | 2009-12-11 | 2009-12-11 | 半導体基板の表面処理装置及び方法 |
TW099130211A TWI514450B (zh) | 2009-12-11 | 2010-09-07 | Surface treatment device and method for semiconductor substrate |
KR1020100088749A KR101170258B1 (ko) | 2009-12-11 | 2010-09-10 | 반도체 기판의 표면 처리 장치 및 방법 |
US12/886,427 US20110143541A1 (en) | 2009-12-11 | 2010-09-20 | Apparatus and method of treating surface of semiconductor substrate |
US14/925,805 US9859111B2 (en) | 2009-12-11 | 2015-10-28 | Apparatus and method of treating surface of semiconductor substrate |
US15/827,427 US9991111B2 (en) | 2009-12-11 | 2017-11-30 | Apparatus and method of treating surface of semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2009281346A JP5404361B2 (ja) | 2009-12-11 | 2009-12-11 | 半導体基板の表面処理装置及び方法 |
Publications (2)
Publication Number | Publication Date |
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JP2011124410A JP2011124410A (ja) | 2011-06-23 |
JP5404361B2 true JP5404361B2 (ja) | 2014-01-29 |
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US (3) | US20110143541A1 (ja) |
JP (1) | JP5404361B2 (ja) |
KR (1) | KR101170258B1 (ja) |
TW (1) | TWI514450B (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5404361B2 (ja) | 2009-12-11 | 2014-01-29 | 株式会社東芝 | 半導体基板の表面処理装置及び方法 |
JP5248652B2 (ja) * | 2011-04-27 | 2013-07-31 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
KR101266620B1 (ko) | 2010-08-20 | 2013-05-22 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 기판처리방법 및 기판처리장치 |
JP5622512B2 (ja) | 2010-10-06 | 2014-11-12 | 株式会社東芝 | 半導体装置の製造方法 |
JP2012084789A (ja) | 2010-10-14 | 2012-04-26 | Toshiba Corp | 半導体装置の製造方法および半導体製造装置 |
JP5931428B2 (ja) | 2011-12-15 | 2016-06-08 | 株式会社東芝 | 配線パターンの形成方法及び半導体装置 |
TWI526257B (zh) | 2012-11-27 | 2016-03-21 | 東京威力科創股份有限公司 | 使用噴嘴清洗基板上之一層的控制 |
US9520459B2 (en) * | 2012-12-21 | 2016-12-13 | SK Hynix Inc. | Surface treatment method for semiconductor device |
JP6139890B2 (ja) | 2013-01-18 | 2017-05-31 | 株式会社東芝 | 半導体装置の製造方法および半導体製造装置 |
JP6013289B2 (ja) * | 2013-08-05 | 2016-10-25 | 株式会社東芝 | 半導体基板の洗浄方法および半導体基板の洗浄装置 |
JP6426927B2 (ja) | 2013-09-30 | 2018-11-21 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
JP6585243B2 (ja) * | 2013-09-30 | 2019-10-02 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
JP6256828B2 (ja) | 2013-10-10 | 2018-01-10 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
CN106463397A (zh) * | 2014-05-12 | 2017-02-22 | 东京毅力科创株式会社 | 用于改善柔性纳米结构的干燥的方法和系统 |
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TWI514450B (zh) | 2015-12-21 |
US9991111B2 (en) | 2018-06-05 |
KR101170258B1 (ko) | 2012-07-31 |
US9859111B2 (en) | 2018-01-02 |
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US20180082832A1 (en) | 2018-03-22 |
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