JP6139890B2 - 半導体装置の製造方法および半導体製造装置 - Google Patents
半導体装置の製造方法および半導体製造装置 Download PDFInfo
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- JP6139890B2 JP6139890B2 JP2013007296A JP2013007296A JP6139890B2 JP 6139890 B2 JP6139890 B2 JP 6139890B2 JP 2013007296 A JP2013007296 A JP 2013007296A JP 2013007296 A JP2013007296 A JP 2013007296A JP 6139890 B2 JP6139890 B2 JP 6139890B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
図1は、第1の実施形態に従った表面処理装置10の構成の一例を示す図である。表面処理装置10は、半導体基板(ウェーハ)Wの搭載部100と、半導体基板Wに液体を供給する液体供給部200と、搭載部100および液体供給部200を密閉するチャンバ300とを備えている。尚、表面処理装置10は、半導体基板Wを1枚ずつ処理する枚葉式の装置である。
P=2×γ×cosθ・H/SPACE (式1)
ここで、SPACEは、互いに隣接するパターン4間の距離を示す。Hは、パターン4の高さを示す。γは、液体5の表面張力を示す。
図6は、第2の実施形態に従った表面処理装置20および表面処理方法を示す図である。第2の実施形態による表面処理装置20は、図5に示すステップS10〜S60における各処理を全てバッチ処理で実行するバッチ処理装置である。即ち、表面処理装置20は、複数の半導体基板W(例えば、2ロットの半導体基板W)を1バッチとして同時に処理する。表面処理装置20は、図6に示すように、洗浄液を溜める洗浄液槽502と、純水を溜める純水槽504と、IPAを溜めるIPA槽506と、第1および第2の薬液を溜める上記薬液槽500とを備える。そして、半導体基板Wを洗浄処理および乾燥処理する際には、半導体基板Wをバッチごとに洗浄液槽502、純水槽504、IPA槽506、薬液槽500、IPA槽506および純水槽504の順に浸漬する。このとき、搭載部10が半導体基板Wを搭載したまま各槽の間を移動し、半導体基板Wを各槽に連続的に浸漬させてもよい。その後、各半導体基板Wを純水槽504から引き上げて気体供給部(図示せず)からドライエアを供給し蒸発乾燥させる。これによって半導体基板Wの洗浄処理および乾燥処理が完了する。また減圧乾燥法を用いてもよい。
Claims (2)
- 半導体基板を洗浄し、
前記半導体基板の表面を純水でリンスし、
前記純水をアルコールで置換し、
撥水性保護膜を形成する第1の薬液および前記第1の薬液上を被覆する第2の薬液を前記半導体基板の表面の回転中心付近に同時に供給し、
該半導体基板を回転させて前記第1および第2の薬液を前記半導体基板の表面全域に行き渡せ、ここで、前記第2の薬液は前記第1の薬液と混合せず、前記第1の薬液と反応せず、並びに、前記第1の薬液は前記第2の薬液の下にあり、
前記第1および第2の薬液をアルコールで置換し、
前記アルコールを純水で置換し、
前記半導体基板を乾燥させることを具備し、
前記第1の薬液は水溶性撥水剤であり、かつ、前記第2の薬液は非水溶性薬液であり、あるいは、前記第1の薬液は非水溶性撥水剤であり、かつ、前記第2の薬液は水溶性薬液であり、
前記第2の薬液の比重は、前記第1の薬液の比重より軽いことを特徴とする半導体装置の製造方法。 - 半導体基板を洗浄する洗浄液を前記半導体基板の表面に供給する洗浄液供給部と、
撥水性保護膜を形成する第1の薬液および前記第1の薬液を被覆する第2の薬液を前記半導体基板の表面上の回転中心付近に同時に供給する薬液供給部と、
前記半導体基板を回転させて前記第1および第2の薬液を前記半導体基板の表面全域に行き渡せる搭載部と、を備え、
前記薬液供給部は、前記第1の薬液を供給する第1の配管と前記第2の薬液を供給する第2の配管とを含む二重配管構造を有し、
前記第2の配管は、前記第1の配管の外周を取り囲むように設けられ、
前記第1の薬液は水溶性撥水剤であり、かつ、前記第2の薬液は非水溶性薬液であり、あるいは、前記第1の薬液は非水溶性撥水剤であり、かつ、前記第2の薬液は水溶性薬液であり、
前記第2の薬液の比重は、前記第1の薬液の比重より軽いことを特徴とする半導体製造装置。
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JP2013007296A JP6139890B2 (ja) | 2013-01-18 | 2013-01-18 | 半導体装置の製造方法および半導体製造装置 |
US13/957,697 US9583331B2 (en) | 2013-01-18 | 2013-08-02 | Manufacturing method of semiconductor device and semiconductor manufacturing apparatus |
US15/408,554 US9818627B2 (en) | 2013-01-18 | 2017-01-18 | Manufacturing method of semiconductor device and semiconductor manufacturing apparatus |
US15/724,744 US10032658B2 (en) | 2013-01-18 | 2017-10-04 | Manufacturing method of semiconductor device and semiconductor manufacturing apparatus |
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JP6139890B2 true JP6139890B2 (ja) | 2017-05-31 |
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JP6139890B2 (ja) * | 2013-01-18 | 2017-05-31 | 株式会社東芝 | 半導体装置の製造方法および半導体製造装置 |
JP6513361B2 (ja) * | 2014-09-30 | 2019-05-15 | 株式会社Screenホールディングス | 基板処理方法 |
JP6454245B2 (ja) * | 2014-10-21 | 2019-01-16 | 東京エレクトロン株式会社 | 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
US10262876B2 (en) | 2015-02-16 | 2019-04-16 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus |
JP6529273B2 (ja) * | 2015-02-16 | 2019-06-12 | 株式会社Screenホールディングス | 基板処理装置 |
JP6419053B2 (ja) * | 2015-10-08 | 2018-11-07 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
CN109075111A (zh) * | 2018-05-17 | 2018-12-21 | 长江存储科技有限责任公司 | 用于改进的化学蚀刻的方法和系统 |
US11935736B2 (en) * | 2018-08-21 | 2024-03-19 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
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JP5398307B2 (ja) * | 2009-03-06 | 2014-01-29 | 株式会社東芝 | 半導体装置の製造方法 |
JP4743340B1 (ja) | 2009-10-28 | 2011-08-10 | セントラル硝子株式会社 | 保護膜形成用薬液 |
JP5404361B2 (ja) | 2009-12-11 | 2014-01-29 | 株式会社東芝 | 半導体基板の表面処理装置及び方法 |
JP5361790B2 (ja) * | 2010-04-28 | 2013-12-04 | 株式会社東芝 | 半導体基板の表面処理方法 |
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JP6139890B2 (ja) * | 2013-01-18 | 2017-05-31 | 株式会社東芝 | 半導体装置の製造方法および半導体製造装置 |
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- 2013-01-18 JP JP2013007296A patent/JP6139890B2/ja active Active
- 2013-08-02 US US13/957,697 patent/US9583331B2/en active Active
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2017
- 2017-01-18 US US15/408,554 patent/US9818627B2/en active Active
- 2017-10-04 US US15/724,744 patent/US10032658B2/en active Active
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Publication number | Publication date |
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US20170125267A1 (en) | 2017-05-04 |
JP2014138153A (ja) | 2014-07-28 |
US20180040490A1 (en) | 2018-02-08 |
US9583331B2 (en) | 2017-02-28 |
US10032658B2 (en) | 2018-07-24 |
US20140206202A1 (en) | 2014-07-24 |
US9818627B2 (en) | 2017-11-14 |
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