JP5481366B2 - 液処理方法および液処理装置 - Google Patents
液処理方法および液処理装置 Download PDFInfo
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- JP5481366B2 JP5481366B2 JP2010285921A JP2010285921A JP5481366B2 JP 5481366 B2 JP5481366 B2 JP 5481366B2 JP 2010285921 A JP2010285921 A JP 2010285921A JP 2010285921 A JP2010285921 A JP 2010285921A JP 5481366 B2 JP5481366 B2 JP 5481366B2
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- 239000007788 liquid Substances 0.000 title claims description 318
- 238000003672 processing method Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims description 139
- 239000005871 repellent Substances 0.000 claims description 96
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 47
- 230000002940 repellent Effects 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 32
- 238000004381 surface treatment Methods 0.000 claims description 28
- 238000001035 drying Methods 0.000 claims description 19
- 239000007769 metal material Substances 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 description 34
- 239000000243 solution Substances 0.000 description 25
- 238000006467 substitution reaction Methods 0.000 description 24
- 230000001737 promoting effect Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 3
- 238000004590 computer program Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 239000012487 rinsing solution Substances 0.000 description 2
- 230000000638 stimulation Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- GJWAPAVRQYYSTK-UHFFFAOYSA-N [(dimethyl-$l^{3}-silanyl)amino]-dimethylsilicon Chemical compound C[Si](C)N[Si](C)C GJWAPAVRQYYSTK-UHFFFAOYSA-N 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- KNLUHXUFCCNNIB-UHFFFAOYSA-N n-dimethylsilyl-n-methylmethanamine Chemical compound CN(C)[SiH](C)C KNLUHXUFCCNNIB-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
まず、図1(a)(b)により、本実施の形態による液処理方法において用いられる被処理基板(被処理体)の構成について説明する。図1(a)は、被処理基板の一部を示す概略平面図であり、図1(b)は、被処理基板の一部を示す概略断面図(図1(a)のI−I線断面図)である。
次に、図2および図3により、本実施の形態による液処理装置の構成について説明する。図2および図3は、本実施の形態による液処理装置を示す図である。
次に、このような構成からなる本実施の形態の作用、具体的には上述した液処理装置を用いた液処理方法について説明する。なお、以下の各動作は、制御部62によって制御される。
以下、本実施の形態の各変形例について、図8乃至図13を参照して説明する。図8乃至図13において、図1乃至図7に示す実施の形態と同一部分には同一の符号を付して詳細な説明は省略する。
Wi 基板本体部(本体部)
Wm 凸状部
Wf 下地面
10 液処理装置
11 液供給アーム
20 薬液供給機構
25 リンス液供給機構
30 置換促進液供給機構
40 回転駆動機構
50 基板保持機構
51 支持プレート
52 回転軸
56 リフト軸
57 支持部
60 コンピュータ
61 記憶媒体
62 制御部
70 表面処理機構
71 親水処理液供給機構
75 撥水処理液供給機構
81 親水撥水処理液供給機構
Claims (6)
- 本体部と、該本体部に突設された親水性の複数の凸状部とを有し、前記本体部上であって前記凸状部間に撥水性の下地面が形成された、被処理体を処理する液処理方法において、
前記被処理体の前記下地面が親水化し、かつ前記凸状部表面が撥水化した状態となるようにする表面処理工程であって、前記被処理体に対して、撥水性の前記下地面を親水化することと、親水性の前記凸状部表面を撥水化することとを同時に実行する親水撥水処理液を供給する親水撥水処理液供給工程を含む、表面処理工程と、
前記下地面を親水化し、かつ前記凸状部表面を撥水化した状態に表面処理された前記被処理体に対してリンス液を供給するリンス液供給工程と、
前記被処理体から前記リンス液を除去する乾燥工程とを備えたことを特徴とする液処理方法。 - 前記被処理体の各前記凸状部は、それぞれシリンダー形状を有することを特徴とする請求項1記載の液処理方法。
- 前記下地面がSi系材料からなり、各前記凸状部が金属系材料からなることを特徴とする請求項1又は2記載の液処理方法。
- 本体部と、該本体部に突設された親水性の複数の凸状部とを有し、前記本体部上であって前記凸状部間に撥水性の下地面が形成された、被処理体を処理する液処理装置において、
前記被処理体を保持する基板保持機構と、
前記基板保持機構に保持された前記被処理体に対して表面処理を行う表面処理機構と、
前記被処理体に対してリンス液を供給するリンス液供給機構と、
前記表面処理機構および前記リンス液供給機構を制御する制御部とを備え、
前記表面処理機構は、前記被処理体に対して、撥水性の前記下地面を親水化することと、親水性の前記凸状部表面を撥水化することとを同時に実行する親水撥水処理液を供給する親水撥水処理液供給機構を含み、
前記制御部は、
前記表面処理機構の親水撥水処理液供給機構を制御して、前記被処理体の前記下地面が親水化し、かつ前記凸状部表面が撥水化した状態となるようにし、
前記リンス液供給機構を制御して、前記下地面を親水化し、かつ前記凸状部表面を撥水化した状態に表面処理された前記被処理体に対して前記リンス液を供給することを特徴とする液処理装置。 - 前記被処理体の各前記凸状部は、それぞれシリンダー形状を有することを特徴とする請求項4記載の液処理装置。
- 前記下地面がSi系材料からなり、各前記凸状部が金属系材料からなることを特徴とする請求項4又は5記載の液処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010285921A JP5481366B2 (ja) | 2010-12-22 | 2010-12-22 | 液処理方法および液処理装置 |
KR1020110104043A KR20120071310A (ko) | 2010-12-22 | 2011-10-12 | 액처리 방법, 액처리 장치 및 기억매체 |
TW100144213A TWI525679B (zh) | 2010-12-22 | 2011-12-01 | Liquid treatment methods, liquid treatment devices and memory media |
US13/328,058 US8741070B2 (en) | 2010-12-22 | 2011-12-16 | Liquid processing method, liquid processing apparatus and recording medium |
KR1020160021175A KR101668212B1 (ko) | 2010-12-22 | 2016-02-23 | 액처리 방법, 액처리 장치 및 기억매체 |
Applications Claiming Priority (1)
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JP2010285921A JP5481366B2 (ja) | 2010-12-22 | 2010-12-22 | 液処理方法および液処理装置 |
Related Child Applications (1)
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JP2013255415A Division JP5710738B2 (ja) | 2013-12-10 | 2013-12-10 | 液処理方法、液処理装置および記憶媒体 |
Publications (2)
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JP2012134363A JP2012134363A (ja) | 2012-07-12 |
JP5481366B2 true JP5481366B2 (ja) | 2014-04-23 |
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JP2010285921A Active JP5481366B2 (ja) | 2010-12-22 | 2010-12-22 | 液処理方法および液処理装置 |
Country Status (4)
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US (1) | US8741070B2 (ja) |
JP (1) | JP5481366B2 (ja) |
KR (2) | KR20120071310A (ja) |
TW (1) | TWI525679B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013201418A (ja) * | 2012-02-24 | 2013-10-03 | Ebara Corp | 基板処理方法 |
JP2014067801A (ja) * | 2012-09-25 | 2014-04-17 | Central Glass Co Ltd | 保護膜形成用薬液 |
US9966280B2 (en) | 2012-10-05 | 2018-05-08 | Tokyo Electron Limited | Process gas generation for cleaning of substrates |
KR102084073B1 (ko) * | 2012-12-21 | 2020-03-04 | 에스케이하이닉스 주식회사 | 반도체 장치의 표면 처리 방법 |
JP6139890B2 (ja) | 2013-01-18 | 2017-05-31 | 株式会社東芝 | 半導体装置の製造方法および半導体製造装置 |
JP6484144B2 (ja) * | 2014-10-17 | 2019-03-13 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP6419053B2 (ja) * | 2015-10-08 | 2018-11-07 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
JP7309485B2 (ja) * | 2019-07-04 | 2023-07-18 | 東京エレクトロン株式会社 | エッチング装置およびエッチング方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07142349A (ja) * | 1993-11-16 | 1995-06-02 | Mitsubishi Electric Corp | 現像工程におけるフォトレジストパターンの倒れを防止する方法 |
JP3681329B2 (ja) * | 2000-10-20 | 2005-08-10 | 東京エレクトロン株式会社 | 基板表面処理方法及び基板表面処理装置 |
JP3675789B2 (ja) * | 2002-10-25 | 2005-07-27 | 東京応化工業株式会社 | 微細パターンの形成方法 |
KR100670396B1 (ko) * | 2004-12-30 | 2007-01-16 | 동부일렉트로닉스 주식회사 | 사이드 로브 현상을 이용한 실린더형 커패시터 형성 방법 |
JP2008041722A (ja) * | 2006-08-02 | 2008-02-21 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
US7838425B2 (en) | 2008-06-16 | 2010-11-23 | Kabushiki Kaisha Toshiba | Method of treating surface of semiconductor substrate |
JP4743340B1 (ja) * | 2009-10-28 | 2011-08-10 | セントラル硝子株式会社 | 保護膜形成用薬液 |
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2010
- 2010-12-22 JP JP2010285921A patent/JP5481366B2/ja active Active
-
2011
- 2011-10-12 KR KR1020110104043A patent/KR20120071310A/ko not_active Application Discontinuation
- 2011-12-01 TW TW100144213A patent/TWI525679B/zh active
- 2011-12-16 US US13/328,058 patent/US8741070B2/en active Active
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2016
- 2016-02-23 KR KR1020160021175A patent/KR101668212B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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KR20160025550A (ko) | 2016-03-08 |
US8741070B2 (en) | 2014-06-03 |
KR101668212B1 (ko) | 2016-10-20 |
US20120160273A1 (en) | 2012-06-28 |
TW201237951A (en) | 2012-09-16 |
JP2012134363A (ja) | 2012-07-12 |
TWI525679B (zh) | 2016-03-11 |
KR20120071310A (ko) | 2012-07-02 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |