JP5361790B2 - 半導体基板の表面処理方法 - Google Patents
半導体基板の表面処理方法 Download PDFInfo
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- JP5361790B2 JP5361790B2 JP2010103943A JP2010103943A JP5361790B2 JP 5361790 B2 JP5361790 B2 JP 5361790B2 JP 2010103943 A JP2010103943 A JP 2010103943A JP 2010103943 A JP2010103943 A JP 2010103943A JP 5361790 B2 JP5361790 B2 JP 5361790B2
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- 239000000758 substrate Substances 0.000 title claims description 87
- 239000004065 semiconductor Substances 0.000 title claims description 64
- 238000000034 method Methods 0.000 title claims description 52
- 238000004381 surface treatment Methods 0.000 title description 18
- 239000000126 substance Substances 0.000 claims description 75
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 57
- 239000000243 solution Substances 0.000 claims description 51
- 239000005871 repellent Substances 0.000 claims description 42
- 239000007788 liquid Substances 0.000 claims description 34
- 230000008569 process Effects 0.000 claims description 29
- 230000001681 protective effect Effects 0.000 claims description 28
- 239000011162 core material Substances 0.000 claims description 26
- 230000002940 repellent Effects 0.000 claims description 24
- 238000001035 drying Methods 0.000 claims description 15
- 238000004140 cleaning Methods 0.000 claims description 11
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 9
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 239000011259 mixed solution Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000008155 medical solution Substances 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 45
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 238000012545 processing Methods 0.000 description 10
- 238000012546 transfer Methods 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000006884 silylation reaction Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010306 acid treatment Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000013518 transcription Methods 0.000 description 3
- 230000035897 transcription Effects 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 238000002407 reforming Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002352 surface water Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZTHXGSSBOFYPTH-UHFFFAOYSA-N N-ethyl-N-methylsilylethanamine Chemical compound CCN(CC)[SiH2]C ZTHXGSSBOFYPTH-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- CABDFQZZWFMZOD-UHFFFAOYSA-N hydrogen peroxide;hydrochloride Chemical compound Cl.OO CABDFQZZWFMZOD-UHFFFAOYSA-N 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
200 薬液等供給部
Claims (5)
- レジストに覆われた第1パターンと、前記レジストに覆われていない第2パターンとを有する半導体基板にレジスト非溶解性の第1薬液を供給して前記第2パターンに対する薬液処理を行う工程と、
前記第1薬液の供給後に、前記半導体基板に撥水化剤とレジスト溶解性の第2薬液との混合液を供給し、少なくとも前記第2パターンの表面に撥水性保護膜を形成すると共に、前記レジストを剥離する工程と、
前記撥水性保護膜の形成後に水を用いて前記半導体基板をリンスする工程と、
リンスした前記半導体基板を乾燥させる工程と、
を備える半導体基板の洗浄方法。 - 前記第2パターンは、芯材及び前記芯材の側面に形成された被覆膜を含み、前記第1薬液の供給に伴う薬液処理により、前記芯材が除去されることを特徴とする請求項1に記載の半導体基板の洗浄方法。
- 前記撥水化剤はシランカップリング剤であり、前記第2薬液はシンナーであることを特徴とする請求項1又は2に記載の半導体基板の洗浄方法。
- 前記第2パターンの少なくとも一部はシリコンを含む膜により形成されており、
前記第1薬液の供給後かつ前記混合液の供給前に、レジスト非溶解性又はレジスト難溶性の第3薬液を用いて、前記第2パターンの表面を酸化する工程をさらに備えることを特徴とする請求項1乃至3のいずれかに記載の半導体基板の洗浄方法。 - 前記第1薬液の供給後かつ前記混合液の供給前と、前記混合液の供給後かつ前記水を用いたリンスの前とに、アルコールを用いて前記半導体基板をリンスする工程をさらに備えることを特徴とする請求項1乃至3のいずれかに記載の半導体基板の洗浄方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010103943A JP5361790B2 (ja) | 2010-04-28 | 2010-04-28 | 半導体基板の表面処理方法 |
TW100106266A TWI431682B (zh) | 2010-04-28 | 2011-02-24 | Surface treatment method of semiconductor substrate |
KR1020110019414A KR20110120208A (ko) | 2010-04-28 | 2011-03-04 | 반도체 기판의 표면 처리 방법 |
US13/069,164 US8435903B2 (en) | 2010-04-28 | 2011-03-22 | Semiconductor substrate surface treatment method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010103943A JP5361790B2 (ja) | 2010-04-28 | 2010-04-28 | 半導体基板の表面処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011233774A JP2011233774A (ja) | 2011-11-17 |
JP5361790B2 true JP5361790B2 (ja) | 2013-12-04 |
Family
ID=44858566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010103943A Expired - Fee Related JP5361790B2 (ja) | 2010-04-28 | 2010-04-28 | 半導体基板の表面処理方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8435903B2 (ja) |
JP (1) | JP5361790B2 (ja) |
KR (1) | KR20110120208A (ja) |
TW (1) | TWI431682B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5690168B2 (ja) * | 2011-02-25 | 2015-03-25 | 芝浦メカトロニクス株式会社 | 基板洗浄装置、基板洗浄方法、表示装置の製造装置及び表示装置の製造方法 |
JP5611884B2 (ja) * | 2011-04-14 | 2014-10-22 | 東京エレクトロン株式会社 | エッチング方法、エッチング装置および記憶媒体 |
US8956465B2 (en) | 2012-03-06 | 2015-02-17 | Tokyo Electron Limited | Liquid processing method, liquid processing device, and storage medium |
JP6139890B2 (ja) | 2013-01-18 | 2017-05-31 | 株式会社東芝 | 半導体装置の製造方法および半導体製造装置 |
US9847302B2 (en) * | 2013-08-23 | 2017-12-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer surface conditioning for stability in fab environment |
JP6534263B2 (ja) * | 2015-02-05 | 2019-06-26 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
EP3404700B1 (en) * | 2016-01-13 | 2020-05-13 | Mitsubishi Gas Chemical Company, Inc. | Liquid composition for imparting alcohol-repellency to semiconductor substrate material, and method for treating surface of semiconductor substrate using said liquid composition |
JP6770887B2 (ja) | 2016-12-28 | 2020-10-21 | 株式会社Screenホールディングス | 基板処理装置および基板処理システム |
JP7094147B2 (ja) * | 2018-05-30 | 2022-07-01 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02166459A (ja) * | 1988-12-20 | 1990-06-27 | Fuji Photo Film Co Ltd | 光重合性フオトレジスト層の剥離液組成物 |
WO2001061760A1 (fr) * | 2000-02-15 | 2001-08-23 | Matsushita Electric Industrial Co., Ltd. | Procede de fabrication d'un transistor a couches minces, et ecran a cristaux liquides |
JP3866130B2 (ja) | 2001-05-25 | 2007-01-10 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
US6703312B2 (en) * | 2002-05-17 | 2004-03-09 | International Business Machines Corporation | Method of forming active devices of different gatelengths using lithographic printed gate images of same length |
JP2005286314A (ja) * | 2004-03-01 | 2005-10-13 | Tokyo Electron Ltd | レジスト膜の剥離方法およびリワーク方法、ならびにレジスト膜の剥離装置およびリワーク装置 |
JP4437068B2 (ja) | 2004-11-19 | 2010-03-24 | 東京応化工業株式会社 | リソグラフィー用リンス液 |
JP4921723B2 (ja) * | 2005-04-18 | 2012-04-25 | 株式会社東芝 | 半導体装置の製造方法 |
US7488685B2 (en) * | 2006-04-25 | 2009-02-10 | Micron Technology, Inc. | Process for improving critical dimension uniformity of integrated circuit arrays |
JP4866165B2 (ja) * | 2006-07-10 | 2012-02-01 | 大日本スクリーン製造株式会社 | 基板の現像処理方法および基板の現像処理装置 |
US20090305506A1 (en) * | 2008-06-09 | 2009-12-10 | Joerg Linz | Self-aligned dual patterning integration scheme |
US7838425B2 (en) * | 2008-06-16 | 2010-11-23 | Kabushiki Kaisha Toshiba | Method of treating surface of semiconductor substrate |
JP2010087301A (ja) * | 2008-09-30 | 2010-04-15 | Toshiba Corp | 半導体装置の製造方法 |
-
2010
- 2010-04-28 JP JP2010103943A patent/JP5361790B2/ja not_active Expired - Fee Related
-
2011
- 2011-02-24 TW TW100106266A patent/TWI431682B/zh active
- 2011-03-04 KR KR1020110019414A patent/KR20110120208A/ko not_active Application Discontinuation
- 2011-03-22 US US13/069,164 patent/US8435903B2/en active Active
Also Published As
Publication number | Publication date |
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JP2011233774A (ja) | 2011-11-17 |
TW201145380A (en) | 2011-12-16 |
US8435903B2 (en) | 2013-05-07 |
TWI431682B (zh) | 2014-03-21 |
KR20110120208A (ko) | 2011-11-03 |
US20110269313A1 (en) | 2011-11-03 |
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