JP6513361B2 - 基板処理方法 - Google Patents
基板処理方法 Download PDFInfo
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- JP6513361B2 JP6513361B2 JP2014200696A JP2014200696A JP6513361B2 JP 6513361 B2 JP6513361 B2 JP 6513361B2 JP 2014200696 A JP2014200696 A JP 2014200696A JP 2014200696 A JP2014200696 A JP 2014200696A JP 6513361 B2 JP6513361 B2 JP 6513361B2
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- 239000000758 substrate Substances 0.000 title claims description 128
- 238000003672 processing method Methods 0.000 title claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 87
- 239000005871 repellent Substances 0.000 claims description 69
- 230000002940 repellent Effects 0.000 claims description 67
- 239000003960 organic solvent Substances 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 20
- 239000003795 chemical substances by application Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 239000012298 atmosphere Substances 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 8
- 238000006467 substitution reaction Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 12
- 239000002245 particle Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 5
- 230000001846 repelling effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000002904 solvent Substances 0.000 description 3
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- -1 fluorinated alkyl chlorosilane Chemical compound 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- GJWAPAVRQYYSTK-UHFFFAOYSA-N [(dimethyl-$l^{3}-silanyl)amino]-dimethylsilicon Chemical compound C[Si](C)N[Si](C)C GJWAPAVRQYYSTK-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- ADTGAVILDBXARD-UHFFFAOYSA-N diethylamino(dimethyl)silicon Chemical compound CCN(CC)[Si](C)C ADTGAVILDBXARD-UHFFFAOYSA-N 0.000 description 1
- KZFNONVXCZVHRD-UHFFFAOYSA-N dimethylamino(dimethyl)silicon Chemical compound CN(C)[Si](C)C KZFNONVXCZVHRD-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- QULMGWCCKILBTO-UHFFFAOYSA-N n-[dimethylamino(dimethyl)silyl]-n-methylmethanamine Chemical compound CN(C)[Si](C)(C)N(C)C QULMGWCCKILBTO-UHFFFAOYSA-N 0.000 description 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/08—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
- B05D3/0486—Operating the coating or treatment in a controlled atmosphere
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
- C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/76—Hydrophobic and oleophobic coatings
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
<基板処理装置の要部構成>
図1は、本発明の実施形態に係る基板処理装置1の正面図である。
<基板処理装置1における基板処理>
次に、基板処理装置1を用いた基板処理について説明する。図2は、基板処理装置1における基板処理の動作を説明するフローチャートである。また、図3乃至13は、基板処理装置1における基板処理の様子を説明する模式図である。
<変形例>
上記の実施形態では、IPA蒸気と窒素ガスとを別々の供給ノズルから吐出するようにしているが、同一のノズルから吐出するようにしてもよい。
上記の実施形態では、基板Wの表面から水分を除去(ステップS4)する際、あるいは基板から撥水剤を除去(ステップS10)する際に、IPAを使用した。しかし、水などのリンス液、および撥水剤の使用している溶媒と置換可能な有機溶媒であればIPA以外の有機溶媒を使用することも可能である。
10 チャンバー
20 処理槽
30 保持機構
40 昇降機構
51、52、53、54、55 ノズル
61、62、63、64、65 バルブ
71 不活性ガス供給源
72、73 IPA供給源
74 撥水剤供給源
75 処理液供給源
80 制御部
W 基板
Claims (3)
- 処理槽に貯留されたリンス液に基板を浸漬して前記基板の表面をリンス液で洗浄するリンス処理工程と、
前記処理槽を囲うチャンバーの内部雰囲気に有機溶媒蒸気を供給することにより、前記処理槽の上方である前記チャンバーの上部空間を含むチャンバーの内部雰囲気に有機溶媒蒸気雰囲気を形成する有機溶媒蒸気形成工程と、
前記基板を前記処理槽の上部空間に引き上げることにより前記基板の表面に付着したリンス液を前記有機溶媒に置換する有機溶媒置換工程と、
前記処理槽内のリンス液を排液する排液工程と、
前記基板を前記処理槽内に移動させる基板移動工程と、
前記処理槽内に移動させた前記基板の表面に対して撥水剤を供給することにより前記基板の表面を撥水処理する撥水処理工程と、
前記基板を前記処理槽の上方に引き上げ、前記処理槽の上方にて前記基板に向けて前記有機溶媒蒸気を供給することにより、基板の表面に残留していた未反応の撥水化剤を除去する撥水剤除去工程と、
前記基板に向けて不活性ガスを供給することにより基板を乾燥する乾燥工程と、を含む基板処理方法。 - 前記有機溶媒はIPAである、請求項1記載の基板処理方法。
- 前記撥水剤除去工程において前記基板に供給される前記有機溶媒蒸気の温度は、前記撥水処理工程において前記基板に供給される前記撥水剤の温度よりも高温である、請求項1または2記載の基板処理方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014200696A JP6513361B2 (ja) | 2014-09-30 | 2014-09-30 | 基板処理方法 |
KR1020150115287A KR101762009B1 (ko) | 2014-09-30 | 2015-08-17 | 기판 처리 방법 |
US14/849,845 US20160089696A1 (en) | 2014-09-30 | 2015-09-10 | Substrate processing method |
CN201510599307.2A CN105470106B (zh) | 2014-09-30 | 2015-09-18 | 基板处理方法 |
TW104132277A TWI573211B (zh) | 2014-09-30 | 2015-09-30 | 基板處理方法 |
KR1020170091143A KR101801004B1 (ko) | 2014-09-30 | 2017-07-18 | 기판 처리 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014200696A JP6513361B2 (ja) | 2014-09-30 | 2014-09-30 | 基板処理方法 |
Related Child Applications (1)
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JP2019074558A Division JP6710801B2 (ja) | 2019-04-10 | 2019-04-10 | 基板処理方法 |
Publications (2)
Publication Number | Publication Date |
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JP2016072446A JP2016072446A (ja) | 2016-05-09 |
JP6513361B2 true JP6513361B2 (ja) | 2019-05-15 |
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JP2014200696A Active JP6513361B2 (ja) | 2014-09-30 | 2014-09-30 | 基板処理方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20160089696A1 (ja) |
JP (1) | JP6513361B2 (ja) |
KR (2) | KR101762009B1 (ja) |
CN (1) | CN105470106B (ja) |
TW (1) | TWI573211B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6728009B2 (ja) | 2016-09-26 | 2020-07-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6801926B2 (ja) * | 2016-09-26 | 2020-12-16 | 株式会社Screenホールディングス | 基板処理方法及び基板処理装置 |
JP6948840B2 (ja) * | 2017-05-31 | 2021-10-13 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6953255B2 (ja) * | 2017-09-21 | 2021-10-27 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
US11923210B2 (en) * | 2018-08-30 | 2024-03-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for in-situ Marangoni cleaning |
JP7281925B2 (ja) * | 2019-03-07 | 2023-05-26 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
JP6956924B2 (ja) * | 2019-08-29 | 2021-11-02 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
JP7446097B2 (ja) * | 2019-12-06 | 2024-03-08 | 東京応化工業株式会社 | 表面処理剤及び表面処理方法 |
JP2021197405A (ja) * | 2020-06-10 | 2021-12-27 | 東京エレクトロン株式会社 | 基板処理装置、及び基板処理方法 |
JP2022027089A (ja) * | 2020-07-31 | 2022-02-10 | 株式会社Screenホールディングス | 基板処理方法、及び基板処理装置 |
JP7458930B2 (ja) | 2020-08-03 | 2024-04-01 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7475252B2 (ja) | 2020-10-02 | 2024-04-26 | 東京エレクトロン株式会社 | 基板処理装置、及び基板処理方法 |
CN215988665U (zh) * | 2021-07-07 | 2022-03-08 | 禄丰隆基硅材料有限公司 | 一种提拉装置及硅片清洗系统 |
JP2023020268A (ja) * | 2021-07-30 | 2023-02-09 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2024066112A (ja) * | 2022-11-01 | 2024-05-15 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
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US4726969A (en) * | 1986-03-27 | 1988-02-23 | Eniricherche, S.P.A. | Thermosetting polyisiloxanic composition for protective coatings and process for coating polycarbonate sheets |
JPH1187305A (ja) * | 1997-09-10 | 1999-03-30 | Dainippon Screen Mfg Co Ltd | 基板乾燥装置およびそれを備えた基板処理装置ならびに基板乾燥方法 |
JPH11274134A (ja) * | 1998-03-19 | 1999-10-08 | Dainippon Screen Mfg Co Ltd | 基板乾燥装置、基板乾燥方法および基板処理装置 |
JP3837016B2 (ja) * | 2000-09-28 | 2006-10-25 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP2002134461A (ja) * | 2000-10-25 | 2002-05-10 | Sony Corp | 乾燥方法 |
JP4602540B2 (ja) * | 2000-12-12 | 2010-12-22 | オメガセミコン電子株式会社 | 基板処理装置 |
JP3684356B2 (ja) * | 2002-03-05 | 2005-08-17 | 株式会社カイジョー | 洗浄物の乾燥装置及び乾燥方法 |
US7838425B2 (en) * | 2008-06-16 | 2010-11-23 | Kabushiki Kaisha Toshiba | Method of treating surface of semiconductor substrate |
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2014
- 2014-09-30 JP JP2014200696A patent/JP6513361B2/ja active Active
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2015
- 2015-08-17 KR KR1020150115287A patent/KR101762009B1/ko active IP Right Grant
- 2015-09-10 US US14/849,845 patent/US20160089696A1/en not_active Abandoned
- 2015-09-18 CN CN201510599307.2A patent/CN105470106B/zh active Active
- 2015-09-30 TW TW104132277A patent/TWI573211B/zh active
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Also Published As
Publication number | Publication date |
---|---|
KR101762009B1 (ko) | 2017-07-26 |
US20160089696A1 (en) | 2016-03-31 |
KR20160038725A (ko) | 2016-04-07 |
TWI573211B (zh) | 2017-03-01 |
KR101801004B1 (ko) | 2017-11-23 |
CN105470106A (zh) | 2016-04-06 |
JP2016072446A (ja) | 2016-05-09 |
CN105470106B (zh) | 2018-06-22 |
KR20170086443A (ko) | 2017-07-26 |
TW201618203A (zh) | 2016-05-16 |
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