JP2016072446A - 基板処理方法 - Google Patents
基板処理方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 146
- 238000003672 processing method Methods 0.000 title claims abstract description 11
- 239000005871 repellent Substances 0.000 claims abstract description 80
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 78
- 230000002940 repellent Effects 0.000 claims abstract description 69
- 239000007788 liquid Substances 0.000 claims abstract description 26
- 239000003960 organic solvent Substances 0.000 claims abstract description 24
- 239000012298 atmosphere Substances 0.000 claims abstract description 11
- 239000011261 inert gas Substances 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims description 11
- 238000005406 washing Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 21
- 239000002245 particle Substances 0.000 abstract description 9
- 239000003795 chemical substances by application Substances 0.000 abstract description 7
- 238000007599 discharging Methods 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 abstract description 2
- 238000011109 contamination Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 2
- GJWAPAVRQYYSTK-UHFFFAOYSA-N [(dimethyl-$l^{3}-silanyl)amino]-dimethylsilicon Chemical compound C[Si](C)N[Si](C)C GJWAPAVRQYYSTK-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- ADTGAVILDBXARD-UHFFFAOYSA-N diethylamino(dimethyl)silicon Chemical compound CCN(CC)[Si](C)C ADTGAVILDBXARD-UHFFFAOYSA-N 0.000 description 1
- KZFNONVXCZVHRD-UHFFFAOYSA-N dimethylamino(dimethyl)silicon Chemical compound CN(C)[Si](C)C KZFNONVXCZVHRD-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QULMGWCCKILBTO-UHFFFAOYSA-N n-[dimethylamino(dimethyl)silyl]-n-methylmethanamine Chemical compound CN(C)[Si](C)(C)N(C)C QULMGWCCKILBTO-UHFFFAOYSA-N 0.000 description 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 organosilane compound Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical group O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/08—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
- B05D3/0486—Operating the coating or treatment in a controlled atmosphere
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
- C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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Abstract
【解決手段】基板処理方法は、処理槽内で基板を洗浄する工程と、チャンバーに有機溶媒蒸気雰囲気を形成する工程と、基板を引き上げ、基板表面のリンス液を有機溶媒に置換する工程と、処理槽からリンス液を排液する工程と、基板を処理槽に移動させる工程と、基板の表面を撥水処理する工程と、基板を引き上げ、基板に向けて有機溶媒蒸気を供給し、基板の表面から撥水化剤を除去する工程と、不活性ガスで基板を乾燥する工程と、を含む。撥水剤除去工程が処理槽の上方で行われるため、この工程で処理槽内に発生するおそれのあるパーティクルによる基板の汚染を抑制しつつ基板を乾燥できる。
【選択図】図2
Description
<基板処理装置の要部構成>
図1は、本発明の実施形態に係る基板処理装置1の正面図である。
<基板処理装置1における基板処理>
次に、基板処理装置1を用いた基板処理について説明する。図2は、基板処理装置1における基板処理の動作を説明するフローチャートである。また、図3乃至13は、基板処理装置1における基板処理の様子を説明する模式図である。
<変形例>
上記の実施形態では、IPA蒸気と窒素ガスとを別々の供給ノズルから吐出するようにしているが、同一のノズルから吐出するようにしてもよい。
上記の実施形態では、基板Wの表面から水分を除去(ステップS4)する際、あるいは基板から撥水剤を除去(ステップS10)する際に、IPAを使用した。しかし、水などのリンス液、および撥水剤の使用している溶媒と置換可能な有機溶媒であればIPA以外の有機溶媒を使用することも可能である。
10 チャンバー
20 処理槽
30 保持機構
40 昇降機構
51、52、53、54、55 ノズル
61、62、63、64、65 バルブ
71 不活性ガス供給源
72、73 IPA供給源
74 撥水剤供給源
75 処理液供給源
80 制御部
W 基板
Claims (3)
- 処理槽に貯留されたリンス液に基板を浸漬して前記基板の表面をリンス液で洗浄するリンス処理工程と、
前記処理槽を囲うチャンバーの内部雰囲気に有機溶媒蒸気を供給することにより、前記処理槽の上部空間を含むチャンバーの内部雰囲気に有機溶媒蒸気雰囲気を形成する有機溶媒蒸気形成工程と、
前記基板を前記処理槽の上部空間に引き上げることにより前記基板の表面に付着したリンス液を有機溶媒に置換する有機溶媒置換工程と、
前記処理槽内のリンス液を排液する排液工程と、
前記基板を前記処理槽内に移動させる基板移動工程と、
前記処理槽内に移動させた前記基板の表面に対して撥水剤を供給することにより前記基板の表面を撥水処理する撥水処理工程と、
前記基板を前記処理槽の上方に引き上げ、前記処理槽の上方にて前記基板に向けて有機溶媒蒸気を供給することにより、基板の表面に残留していた未反応の撥水化剤を除去する撥水剤除去工程と、
前記基板に向けて不活性ガスを供給することにより基板を乾燥する乾燥工程と、を含む基板処理方法。 - 前記有機溶媒はIPAである、請求項1記載の基板処理方法。
- 前記撥水剤除去工程において前記基板に供給される有機溶媒蒸気の温度は、前記撥水処理工程において前記基板に供給される前記撥水剤の温度よりも高温である、請求項1または2記載の基板処理方法。
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JP2014200696A JP6513361B2 (ja) | 2014-09-30 | 2014-09-30 | 基板処理方法 |
KR1020150115287A KR101762009B1 (ko) | 2014-09-30 | 2015-08-17 | 기판 처리 방법 |
US14/849,845 US20160089696A1 (en) | 2014-09-30 | 2015-09-10 | Substrate processing method |
CN201510599307.2A CN105470106B (zh) | 2014-09-30 | 2015-09-18 | 基板处理方法 |
TW104132277A TWI573211B (zh) | 2014-09-30 | 2015-09-30 | 基板處理方法 |
KR1020170091143A KR101801004B1 (ko) | 2014-09-30 | 2017-07-18 | 기판 처리 방법 |
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JP2014200696A JP6513361B2 (ja) | 2014-09-30 | 2014-09-30 | 基板処理方法 |
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US (1) | US20160089696A1 (ja) |
JP (1) | JP6513361B2 (ja) |
KR (2) | KR101762009B1 (ja) |
CN (1) | CN105470106B (ja) |
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KR20180034238A (ko) | 2016-09-26 | 2018-04-04 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 방법 및 기판 처리 장치 |
TWI808844B (zh) * | 2021-07-30 | 2023-07-11 | 日商斯庫林集團股份有限公司 | 基板處理方法以及基板處理裝置 |
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JP7446097B2 (ja) * | 2019-12-06 | 2024-03-08 | 東京応化工業株式会社 | 表面処理剤及び表面処理方法 |
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CN215988665U (zh) * | 2021-07-07 | 2022-03-08 | 禄丰隆基硅材料有限公司 | 一种提拉装置及硅片清洗系统 |
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KR20180034238A (ko) | 2016-09-26 | 2018-04-04 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 방법 및 기판 처리 장치 |
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JP7475252B2 (ja) | 2020-10-02 | 2024-04-26 | 東京エレクトロン株式会社 | 基板処理装置、及び基板処理方法 |
TWI808844B (zh) * | 2021-07-30 | 2023-07-11 | 日商斯庫林集團股份有限公司 | 基板處理方法以及基板處理裝置 |
WO2024095760A1 (ja) * | 2022-11-01 | 2024-05-10 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
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JP6513361B2 (ja) | 2019-05-15 |
CN105470106B (zh) | 2018-06-22 |
KR20160038725A (ko) | 2016-04-07 |
TW201618203A (zh) | 2016-05-16 |
CN105470106A (zh) | 2016-04-06 |
KR101801004B1 (ko) | 2017-11-23 |
US20160089696A1 (en) | 2016-03-31 |
KR101762009B1 (ko) | 2017-07-26 |
KR20170086443A (ko) | 2017-07-26 |
TWI573211B (zh) | 2017-03-01 |
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