CN101048857B - 用作金属间电介质的低k和超低k有机硅酸盐膜的疏水性的恢复 - Google Patents
用作金属间电介质的低k和超低k有机硅酸盐膜的疏水性的恢复 Download PDFInfo
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- CN101048857B CN101048857B CN2004800442976A CN200480044297A CN101048857B CN 101048857 B CN101048857 B CN 101048857B CN 2004800442976 A CN2004800442976 A CN 2004800442976A CN 200480044297 A CN200480044297 A CN 200480044297A CN 101048857 B CN101048857 B CN 101048857B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
处理 | 接触角(度) |
初始膜 | 104 |
在等离子体曝光之后 | 0.5 |
在HMDS甲硅烷基化+400℃退火之后 | 85 |
在BDMADMS甲硅烷基化+400℃退火之后 | 107.8 |
处理 | 接触角(度) |
初始膜 | 104 |
在等离子体曝光之后 | 0 |
在HMDS甲硅烷基化+400℃退火之后 | 81.3 |
在BDMADMS甲硅烷基化+400℃退火之后 | 107.7 |
膜/处理 | 介电常数 |
初始膜 | 2.1 |
在等离子体曝光+400℃退火之后 | 2.42 |
在BDMADMS甲硅烷基化+400℃退火之后 | 1.95 |
氯硅烷 | 氨基硅烷 | 烷氧基硅烷 | |
离去基团 | HCl | NHR<sub>2</sub> | ROH |
离解能Me<sub>3</sub>Si-X(kCal/mol) | 117 | 98 | 123 |
Claims (84)
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PCT/US2004/035685 WO2006049595A1 (en) | 2004-10-27 | 2004-10-27 | Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics |
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CN101048857A CN101048857A (zh) | 2007-10-03 |
CN101048857B true CN101048857B (zh) | 2010-10-13 |
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EP (1) | EP1812961A1 (zh) |
JP (1) | JP4594988B2 (zh) |
KR (3) | KR101063591B1 (zh) |
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WO (1) | WO2006049595A1 (zh) |
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JP5662081B2 (ja) * | 2010-08-20 | 2015-01-28 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
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JP2012222329A (ja) * | 2011-04-14 | 2012-11-12 | Tokyo Electron Ltd | 液処理方法及び液処理装置 |
US8575041B2 (en) | 2011-09-15 | 2013-11-05 | Globalfoundries Inc. | Repair of damaged surface areas of sensitive low-K dielectrics of microstructure devices after plasma processing by in situ treatment |
CN103426733A (zh) * | 2012-05-17 | 2013-12-04 | 中芯国际集成电路制造(上海)有限公司 | 超低k介质层处理方法 |
US9260571B2 (en) | 2012-05-24 | 2016-02-16 | Lawrence Livermore National Security, Llc | Hybrid polymer networks as ultra low ‘k’ dielectric layers |
US9029171B2 (en) | 2012-06-25 | 2015-05-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self repairing process for porous dielectric materials |
TW201403711A (zh) * | 2012-07-02 | 2014-01-16 | Applied Materials Inc | 利用氣相化學暴露之低k介電質損傷修復 |
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JP6234898B2 (ja) | 2013-09-25 | 2017-11-22 | 信越化学工業株式会社 | フォトマスクブランクの製造方法 |
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Also Published As
Publication number | Publication date |
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KR100985613B1 (ko) | 2010-10-05 |
JP2008518460A (ja) | 2008-05-29 |
CN101048857A (zh) | 2007-10-03 |
KR20090111883A (ko) | 2009-10-27 |
KR101063591B1 (ko) | 2011-09-07 |
KR100974042B1 (ko) | 2010-08-05 |
JP4594988B2 (ja) | 2010-12-08 |
KR20100088166A (ko) | 2010-08-06 |
KR20090113389A (ko) | 2009-10-30 |
EP1812961A1 (en) | 2007-08-01 |
WO2006049595A1 (en) | 2006-05-11 |
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