AU2001266998A1 - Method to restore hydrophobicity in dielectric films and materials - Google Patents

Method to restore hydrophobicity in dielectric films and materials

Info

Publication number
AU2001266998A1
AU2001266998A1 AU2001266998A AU6699801A AU2001266998A1 AU 2001266998 A1 AU2001266998 A1 AU 2001266998A1 AU 2001266998 A AU2001266998 A AU 2001266998A AU 6699801 A AU6699801 A AU 6699801A AU 2001266998 A1 AU2001266998 A1 AU 2001266998A1
Authority
AU
Australia
Prior art keywords
materials
dielectric films
hydrophobicity
restore
restore hydrophobicity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001266998A
Inventor
James S. Drage
Nigel P. Hacker
Michael Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of AU2001266998A1 publication Critical patent/AU2001266998A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
AU2001266998A 2000-06-23 2001-06-19 Method to restore hydrophobicity in dielectric films and materials Abandoned AU2001266998A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US21421900P 2000-06-23 2000-06-23
US60214219 2000-06-23
PCT/US2001/019466 WO2002001621A2 (en) 2000-06-23 2001-06-19 Method to restore hydrophobicity in dielectric films and materials

Publications (1)

Publication Number Publication Date
AU2001266998A1 true AU2001266998A1 (en) 2002-01-08

Family

ID=22798248

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001266998A Abandoned AU2001266998A1 (en) 2000-06-23 2001-06-19 Method to restore hydrophobicity in dielectric films and materials

Country Status (9)

Country Link
US (3) US7029826B2 (en)
EP (1) EP1292973B1 (en)
JP (2) JP5307963B2 (en)
KR (1) KR100797202B1 (en)
CN (1) CN1279588C (en)
AU (1) AU2001266998A1 (en)
CA (1) CA2413592A1 (en)
TW (1) TWI264040B (en)
WO (1) WO2002001621A2 (en)

Families Citing this family (105)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9904427D0 (en) 1999-02-26 1999-04-21 Trikon Holdings Ltd Method treating an insulating layer
WO2001085308A2 (en) 2000-05-05 2001-11-15 Extraction Systems, Inc. Filters employing both acidic polymers and physical-absorption media
JP5307963B2 (en) 2000-06-23 2013-10-02 ハネウェル・インターナショナル・インコーポレーテッド Method for restoring hydrophobicity in dielectric films and materials
US7174303B2 (en) * 2000-07-31 2007-02-06 Uappoint, Inc Customer driven, sponsor controlled network-based graphical scheduling system and method
US7270941B2 (en) * 2002-03-04 2007-09-18 Tokyo Electron Limited Method of passivating of low dielectric materials in wafer processing
GB2410832A (en) * 2002-06-14 2005-08-10 Trikon Technologies Ltd Porous dielectric films with a non-porous surface
US6933246B2 (en) 2002-06-14 2005-08-23 Trikon Technologies Limited Dielectric film
US7005390B2 (en) * 2002-10-09 2006-02-28 Intel Corporation Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
EP1588411A4 (en) * 2003-01-25 2008-10-01 Honeywell Int Inc Repair and restoration of damaged dielectric materials and films
US7709371B2 (en) 2003-01-25 2010-05-04 Honeywell International Inc. Repairing damage to low-k dielectric materials using silylating agents
US6921727B2 (en) 2003-03-11 2005-07-26 Applied Materials, Inc. Method for modifying dielectric characteristics of dielectric layers
TWI257120B (en) 2003-06-18 2006-06-21 Fujitsu Ltd Method for manufacturing semiconductor device
US20040266184A1 (en) * 2003-06-30 2004-12-30 Ramachandrarao Vijayakumar S Post-deposition modification of interlayer dielectrics
US7425505B2 (en) * 2003-07-23 2008-09-16 Fsi International, Inc. Use of silyating agents
US7122481B2 (en) * 2003-07-25 2006-10-17 Intel Corporation Sealing porous dielectrics with silane coupling reagents
US7179758B2 (en) * 2003-09-03 2007-02-20 International Business Machines Corporation Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
US8475666B2 (en) * 2004-09-15 2013-07-02 Honeywell International Inc. Method for making toughening agent materials
US7717929B2 (en) 2003-12-19 2010-05-18 Radi Medical Systems Ab Technique for securing a suture
US7223704B2 (en) * 2004-08-27 2007-05-29 Infineon Technologies Ag Repair of carbon depletion in low-k dielectric films
US8119537B2 (en) * 2004-09-02 2012-02-21 Micron Technology, Inc. Selective etching of oxides to metal nitrides and metal oxides
JP4903373B2 (en) 2004-09-02 2012-03-28 ローム株式会社 Manufacturing method of semiconductor device
JP4903374B2 (en) 2004-09-02 2012-03-28 ローム株式会社 Manufacturing method of semiconductor device
SG141441A1 (en) * 2004-09-15 2008-04-28 Honeywell Int Inc Treating agent materials
JP2006124410A (en) * 2004-09-30 2006-05-18 Jsr Corp Surface-hydrophobilizing composition, surface-hydrophobilizing method, semiconductor device and method for producing the same
JP4780276B2 (en) * 2004-09-30 2011-09-28 Ｊｓｒ株式会社 Surface hydrophobization method and semiconductor device manufacturing method
JP5184737B2 (en) * 2004-09-30 2013-04-17 Ｊｓｒ株式会社 Surface hydrophobizing composition, surface hydrophobizing method, semiconductor device and manufacturing method thereof
JP2006104418A (en) * 2004-10-08 2006-04-20 Jsr Corp Surface-hydrophobizing composition, surface hydrophobizing method, semiconductor and method for producing the same
JP2006114719A (en) * 2004-10-15 2006-04-27 Jsr Corp Composition for surface hydrophobing, method of hydrophobing surface, semiconductor device and its manufacturing method
JP4798334B2 (en) * 2004-10-15 2011-10-19 Ｊｓｒ株式会社 Surface hydrophobizing composition, surface hydrophobizing method, semiconductor device and manufacturing method thereof
JP4780277B2 (en) * 2004-10-15 2011-09-28 Ｊｓｒ株式会社 Surface hydrophobizing composition, surface hydrophobizing method, semiconductor device and manufacturing method thereof
JP2006111740A (en) * 2004-10-15 2006-04-27 Jsr Corp Composition for surface hydrophobizing, surface hydrophobizing method, semiconductor device and its manufacturing method
JP4883256B2 (en) * 2004-10-15 2012-02-22 Ｊｓｒ株式会社 Surface hydrophobizing composition, surface hydrophobizing method, semiconductor device and manufacturing method thereof
JP4591032B2 (en) * 2004-10-15 2010-12-01 Ｊｓｒ株式会社 Surface hydrophobizing composition, surface hydrophobizing method, and semiconductor device manufacturing method
JP2006111738A (en) * 2004-10-15 2006-04-27 Jsr Corp Composition for surface hydrophobizing, surface hydrophobizing method, semiconductor device and its manufacturing method
KR100935620B1 (en) * 2004-10-27 2010-01-07 인터내셔널 비지네스 머신즈 코포레이션 Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
EP1812961A1 (en) * 2004-10-27 2007-08-01 International Business Machines Corporation Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
US20060128163A1 (en) * 2004-12-14 2006-06-15 International Business Machines Corporation Surface treatment of post-rie-damaged p-osg and other damaged materials
US20080207005A1 (en) * 2005-02-15 2008-08-28 Freescale Semiconductor, Inc. Wafer Cleaning After Via-Etching
US20090206453A1 (en) * 2005-02-15 2009-08-20 Ulvac, Inc. Method for Preparing Modified Porous Silica Films, Modified Porous Silica Films Prepared According to This Method and Semiconductor Devices Fabricated Using the Modified Porous Silica Films
JP4877452B2 (en) * 2005-02-22 2012-02-15 Ｊｓｒ株式会社 Surface hydrophobizing composition, surface hydrophobizing method, semiconductor device and manufacturing method thereof
JP4877454B2 (en) * 2005-03-18 2012-02-15 Ｊｓｒ株式会社 Surface hydrophobization method, semiconductor device and method for manufacturing the same
US7678712B2 (en) * 2005-03-22 2010-03-16 Honeywell International, Inc. Vapor phase treatment of dielectric materials
WO2007016218A2 (en) * 2005-07-29 2007-02-08 Applied Materials, Inc. Integrated electroless deposition system
US20070054501A1 (en) * 2005-08-23 2007-03-08 Battelle Memorial Institute Process for modifying dielectric materials
JP4445448B2 (en) * 2005-09-16 2010-04-07 株式会社東芝 Circuit board manufacturing method
US7405168B2 (en) * 2005-09-30 2008-07-29 Tokyo Electron Limited Plural treatment step process for treating dielectric films
JP5019741B2 (en) 2005-11-30 2012-09-05 東京エレクトロン株式会社 Semiconductor device manufacturing method and substrate processing system
US7709792B2 (en) * 2006-01-12 2010-05-04 Kla-Tencor Technologies Corporation Three-dimensional imaging using electron beam activated chemical etch
WO2007100933A2 (en) * 2006-01-12 2007-09-07 Kla Tencor Technologies Corporation Etch selectivity enhancement, deposition quality evaluation, structural modification and three-dimensional imaging using electron beam activated chemical etch
US7879730B2 (en) * 2006-01-12 2011-02-01 Kla-Tencor Technologies Corporation Etch selectivity enhancement in electron beam activated chemical etch
US8052885B2 (en) * 2006-01-12 2011-11-08 Kla-Tencor Corporation Structural modification using electron beam activated chemical etch
US7945086B2 (en) * 2006-01-12 2011-05-17 Kla-Tencor Technologies Corporation Tungsten plug deposition quality evaluation method by EBACE technology
US7803719B2 (en) 2006-02-24 2010-09-28 Freescale Semiconductor, Inc. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device
JP4849219B2 (en) * 2006-03-23 2012-01-11 Ｊｓｒ株式会社 Surface hydrophobizing composition, surface hydrophobizing method, and semiconductor device
JP5372323B2 (en) 2006-03-29 2013-12-18 富士通株式会社 Interface roughness reducing film, wiring layer and semiconductor device using the same, and method for manufacturing semiconductor device
US7399911B1 (en) 2006-04-24 2008-07-15 Monsanto Technology Llc Plants and seeds of corn variety I286394
US7807219B2 (en) * 2006-06-27 2010-10-05 Lam Research Corporation Repairing and restoring strength of etch-damaged low-k dielectric materials
TWI417130B (en) * 2006-07-13 2013-12-01 Entegris Inc Filtering system
JP5055971B2 (en) * 2006-11-16 2012-10-24 株式会社ニコン Surface treatment method, surface treatment apparatus, exposure method, exposure apparatus, and device manufacturing method
US7977121B2 (en) * 2006-11-17 2011-07-12 Air Products And Chemicals, Inc. Method and composition for restoring dielectric properties of porous dielectric materials
US7500397B2 (en) * 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
US20100015731A1 (en) * 2007-02-20 2010-01-21 Lam Research Corporation Method of low-k dielectric film repair
KR101132095B1 (en) * 2007-03-15 2012-04-04 후지쯔 가부시끼가이샤 Surface-hydrophobicized film, material for formation of surface-hydrophobicized film, wiring layer, semiconductor device and process for producing semiconductor device
US20090026924A1 (en) * 2007-07-23 2009-01-29 Leung Roger Y Methods of making low-refractive index and/or low-k organosilicate coatings
US20090061633A1 (en) * 2007-08-31 2009-03-05 Fujitsu Limited Method of manufacturing semiconductor device
JP5119832B2 (en) 2007-09-27 2013-01-16 富士通株式会社 Interface roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device
US7867900B2 (en) * 2007-09-28 2011-01-11 Applied Materials, Inc. Aluminum contact integration on cobalt silicide junction
JP2009164198A (en) * 2007-12-28 2009-07-23 Panasonic Corp Method of manufacturing semiconductor device
CN102046699B (en) * 2008-05-26 2012-09-05 巴斯夫欧洲公司 Method of making porous materials and porous materials prepared thereof
WO2010009234A1 (en) 2008-07-16 2010-01-21 Wisconsin Alumni Research Foundation Metal substrates including metal oxide nanoporous thin films and methods of making the same
JP2010027952A (en) * 2008-07-23 2010-02-04 Toshiba Corp Method for manufacturing semiconductor device
JP4947316B2 (en) * 2008-08-15 2012-06-06 信越化学工業株式会社 Substrate bonding method and three-dimensional semiconductor device
US8283260B2 (en) * 2008-08-18 2012-10-09 Air Products And Chemicals, Inc. Process for restoring dielectric properties
KR100981820B1 (en) * 2008-09-08 2010-09-13 경희대학교 산학협력단 Substrate Surface Treatment Device and Method Using TMCS Vapor
KR101350020B1 (en) * 2008-12-08 2014-01-13 후지쯔 가부시끼가이샤 Method for manufacturing semiconductor device
JP5533178B2 (en) * 2009-04-24 2014-06-25 セントラル硝子株式会社 Silicon wafer cleaning agent
US9053924B2 (en) * 2008-12-26 2015-06-09 Central Glass Company, Limited Cleaning agent for silicon wafer
DE102008063417B4 (en) * 2008-12-31 2016-08-11 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Local silicidation on contact hole bottoms in metallization systems of semiconductor devices
US8366954B2 (en) 2009-01-13 2013-02-05 Avantor Performance Materials, Bv Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level
SG173043A1 (en) * 2009-01-21 2011-08-29 Central Glass Co Ltd Silicon wafer cleaning agent
SG174296A1 (en) * 2009-03-10 2011-10-28 Air Liquide Cyclic amino compounds for low-k silylation
DE102009023378B4 (en) 2009-05-29 2013-11-28 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Restoration of a hydrophobic surface of sensitive low-k dielectric materials in microstructure devices
DE102009023379B4 (en) 2009-05-29 2014-08-21 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Producing a hydrophobic surface of sensitive dielectrics with small ε of microstructure devices by an in-situ plasma treatment
JP5558876B2 (en) * 2009-09-18 2014-07-23 東海ゴム工業株式会社 Dielectric film, manufacturing method thereof, and transducer using the same
CN102034794B (en) * 2009-09-28 2012-10-31 中芯国际集成电路制造(上海)有限公司 Test structure and method for testing semiconductor substrate
US7981699B2 (en) * 2009-10-22 2011-07-19 Lam Research Corporation Method for tunably repairing low-k dielectric damage
US20110097904A1 (en) * 2009-10-22 2011-04-28 Lam Research Corporation Method for repairing low-k dielectric damage
EP2329938A1 (en) * 2009-12-01 2011-06-08 Siemens Aktiengesellschaft Fibre-reinforced plastic material comprising fibers with at least one groove
US8329552B1 (en) 2011-07-22 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
KR101438890B1 (en) * 2012-06-28 2014-09-15 현대자동차주식회사 Membrane electrode assembly with enhanced hydrophobicity and manufacturing method thereof
CN103624032B (en) * 2012-08-23 2015-11-25 中芯国际集成电路制造(上海)有限公司 A kind of monolithic cleaning method of wafer
CN102856251A (en) * 2012-09-21 2013-01-02 复旦大学 Method for removing hydroxylation on surface of low dielectric constant medium
US10020185B2 (en) 2014-10-07 2018-07-10 Samsung Sdi Co., Ltd. Composition for forming silica layer, silica layer, and electronic device
US20160172188A1 (en) * 2014-12-16 2016-06-16 Samsung Sdi Co., Ltd. Rinse solution for silica thin film, method of producing silica thin film, and silica thin film
KR101837971B1 (en) 2014-12-19 2018-03-13 삼성에스디아이 주식회사 Composition for forming silica based layer, silica based layer, and electronic device
KR101833800B1 (en) 2014-12-19 2018-03-02 삼성에스디아이 주식회사 Composition for forming silica based layer, method for manufacturing silica based layer, and electronic device including the silica based layer
CN105004718B (en) * 2015-07-20 2018-09-28 新疆农业大学 A kind of preparation method of paper substrate micro-fluidic chip
KR20170014946A (en) 2015-07-31 2017-02-08 삼성에스디아이 주식회사 Composition for forming silica layer, method for manufacturing silica layer, and silica layer
CN108022830B (en) * 2016-10-31 2020-06-05 中芯国际集成电路制造(上海)有限公司 Method for manufacturing semiconductor device
CN108841207B (en) * 2018-05-30 2020-09-08 杭州电子科技大学 Novel low-temperature plasma preparation process of super-hydrophobic white carbon black
CN111868141A (en) * 2018-07-27 2020-10-30 浙江三时纪新材科技有限公司 Preparation method of spherical powder filler, spherical powder filler obtained by preparation method and application of spherical powder filler
CN111819247A (en) * 2019-02-22 2020-10-23 浙江三时纪新材科技有限公司 Preparation method of spherical or angular powder filler, spherical or angular powder filler obtained by preparation method and application of spherical or angular powder filler
US10886166B2 (en) 2019-03-08 2021-01-05 International Business Machines Corporation Dielectric surface modification in sub-40nm pitch interconnect patterning
CN111825480B (en) * 2020-08-13 2022-11-04 西藏大学 Ultraviolet-resistant super-hydrophobic anti-freezing material and preparation method thereof
CN113327775B (en) * 2021-05-28 2022-04-29 河北工业大学 Preparation method of potassium ion micro hybrid capacitor and electrode material

Family Cites Families (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567221A (en) 1983-03-31 1986-01-28 Kuraray Co., Ltd. Water resistant compositions
US4654269A (en) 1985-06-21 1987-03-31 Fairchild Camera & Instrument Corp. Stress relieved intermediate insulating layer for multilayer metalization
US4624739A (en) 1985-08-09 1986-11-25 International Business Machines Corporation Process using dry etchant to avoid mask-and-etch cycle
WO1990010035A1 (en) * 1989-03-01 1990-09-07 Raychem Corporation Method of curing organopolysiloxane compositions and compositions and articles therefrom
JP2868243B2 (en) 1989-10-06 1999-03-10 富士通株式会社 Method for manufacturing semiconductor device
JPH03180033A (en) * 1989-12-08 1991-08-06 Mitsubishi Electric Corp Pattern forming method
US5372851A (en) 1991-12-16 1994-12-13 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a chemically adsorbed film
JP2603017B2 (en) 1991-12-16 1997-04-23 松下電器産業株式会社 Manufacturing method of chemisorption membrane
US5271777A (en) 1991-12-17 1993-12-21 Hughes Aircraft Company High efficiency coil fabrication process
JPH05304089A (en) * 1992-04-28 1993-11-16 Dainippon Screen Mfg Co Ltd Method and device of removing resist from surface of substrate
KR100259613B1 (en) 1992-07-23 2000-06-15 휴스톤 로버트 엘 Silicon or silica substrate with a modified surface process for producing the same new orthoesters and process for producing the same
US5576247A (en) 1992-07-31 1996-11-19 Matsushita Electric Industrial Co., Ltd. Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture
JP3219315B2 (en) 1992-08-21 2001-10-15 大日本印刷株式会社 Method for correcting white defect in phase shift mask
US5429730A (en) 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
WO1994021386A2 (en) 1993-03-25 1994-09-29 Research Corporation Technologies, Inc. Polymers useful in forming self-assembled bonded anisotropic ultrathin layers and their use
JPH0766287A (en) 1993-08-23 1995-03-10 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPH07335758A (en) * 1994-04-15 1995-12-22 Matsushita Electric Ind Co Ltd Forming method of multilayer metallic interconnection
US5488015A (en) 1994-05-20 1996-01-30 Texas Instruments Incorporated Method of making an interconnect structure with an integrated low density dielectric
US5479727A (en) 1994-10-25 1996-01-02 Air Products And Chemicals, Inc. Moisture removal and passivation of surfaces
US5609629A (en) 1995-06-07 1997-03-11 Med Institute, Inc. Coated implantable medical device
US6258972B1 (en) 1995-08-03 2001-07-10 Matsushita Electric Industrial Co., Ltd. Pattern formation method and surface treating agent
JP3618150B2 (en) * 1995-10-09 2005-02-09 松下電器産業株式会社 Semiconductor device and manufacturing method thereof
EP0775669B1 (en) 1995-11-16 2001-05-02 Texas Instruments Incorporated Low volatility solvent-based precursors for nanoporous aerogels
JP3230182B2 (en) * 1996-02-29 2001-11-19 シャープ株式会社 Method for manufacturing semiconductor device
WO1997038355A1 (en) 1996-04-08 1997-10-16 Micrion Corporation Systems and methods for deposition of dielectric films
RU2089499C1 (en) 1996-12-11 1997-09-10 Смирнов Александр Витальевич Method of preparing hydrophobic disperse material
KR19980064176A (en) 1996-12-17 1998-10-07 윌리엄비.켐플러 Integrated circuit dielectric
US5750610A (en) 1997-02-24 1998-05-12 Dow Corning Corporation Hydrophobic organosilicate-modified silica gels
JPH10270556A (en) * 1997-03-28 1998-10-09 Kawasaki Steel Corp Method for forming insulating film
US5915175A (en) 1997-06-27 1999-06-22 Siemens Aktiengesellschaft Mitigation of CMP-induced BPSG surface damage by an integrated anneal and silicon dioxide deposition
US6448331B1 (en) 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
TW401376B (en) 1997-07-15 2000-08-11 Asahi Chemical Ind An alkoxysilane/organic polymer composition for use in producing an insulating thin film and uses thereof
WO1999013220A1 (en) * 1997-09-05 1999-03-18 Theodorus Istvan Van Bakkum Wind turbine mounted on buoyant wing kite
US6042994A (en) * 1998-01-20 2000-03-28 Alliedsignal Inc. Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content
WO1999040615A1 (en) 1998-02-04 1999-08-12 Semitool, Inc. Method and apparatus for low-temperature annealing of metallization micro-structures in the production of a microelectronic device
JP4521992B2 (en) 1998-04-01 2010-08-11 旭化成株式会社 Manufacturing method of wiring structure
JP3432744B2 (en) * 1998-06-11 2003-08-04 株式会社東芝 Semiconductor device and manufacturing method thereof
US6395651B1 (en) * 1998-07-07 2002-05-28 Alliedsignal Simplified process for producing nanoporous silica
JP3099813B2 (en) * 1998-07-30 2000-10-16 日本電気株式会社 Method for manufacturing semiconductor device
JP3248492B2 (en) * 1998-08-14 2002-01-21 日本電気株式会社 Semiconductor device and manufacturing method thereof
US6037275A (en) 1998-08-27 2000-03-14 Alliedsignal Inc. Nanoporous silica via combined stream deposition
US6410149B1 (en) * 1998-08-27 2002-06-25 Alliedsignal Inc. Silane-based nanoporous silica thin films and precursors for making same
US6245690B1 (en) 1998-11-04 2001-06-12 Applied Materials, Inc. Method of improving moisture resistance of low dielectric constant films
US6090724A (en) 1998-12-15 2000-07-18 Lsi Logic Corporation Method for composing a thermally conductive thin film having a low dielectric property
US6177143B1 (en) 1999-01-06 2001-01-23 Allied Signal Inc Electron beam treatment of siloxane resins
US6770572B1 (en) 1999-01-26 2004-08-03 Alliedsignal Inc. Use of multifunctional si-based oligomer/polymer for the surface modification of nanoporous silica films
JP3266195B2 (en) 1999-03-23 2002-03-18 日本電気株式会社 Method for manufacturing semiconductor device
JP3229294B2 (en) * 1999-06-04 2001-11-19 キヤノン販売株式会社 Method for modifying surface on which film is formed and method for manufacturing semiconductor device
KR100333546B1 (en) 1999-06-10 2002-04-24 박종섭 Manufacturing method for semiconductor device
US6318124B1 (en) 1999-08-23 2001-11-20 Alliedsignal Inc. Nanoporous silica treated with siloxane polymers for ULSI applications
US6589889B2 (en) 1999-09-09 2003-07-08 Alliedsignal Inc. Contact planarization using nanoporous silica materials
JP2001118842A (en) 1999-10-15 2001-04-27 Nec Corp Semiconductor device and its manufacturing method
US6420193B1 (en) 2000-03-17 2002-07-16 Advance Micro Devices, Inc. Repair of film having an SI-O backbone
US6346490B1 (en) 2000-04-05 2002-02-12 Lsi Logic Corporation Process for treating damaged surfaces of low k carbon doped silicon oxide dielectric material after plasma etching and plasma cleaning steps
US6451512B1 (en) 2000-05-01 2002-09-17 Advanced Micro Devices, Inc. UV-enhanced silylation process to increase etch resistance of ultra thin resists
JP5307963B2 (en) 2000-06-23 2013-10-02 ハネウェル・インターナショナル・インコーポレーテッド Method for restoring hydrophobicity in dielectric films and materials
US6395650B1 (en) 2000-10-23 2002-05-28 International Business Machines Corporation Methods for forming metal oxide layers with enhanced purity
US6500494B2 (en) 2000-12-29 2002-12-31 Kodak Polychrome Graphics Llc Spray coating matting method for printing plate precursors
US6713382B1 (en) 2001-01-31 2004-03-30 Advanced Micro Devices, Inc. Vapor treatment for repairing damage of low-k dielectric
US6566283B1 (en) 2001-02-15 2003-05-20 Advanced Micro Devices, Inc. Silane treatment of low dielectric constant materials in semiconductor device manufacturing
KR100396889B1 (en) 2001-03-08 2003-09-03 삼성전자주식회사 Method of forming contact using crack-protecting layer and semiconductor device using the same
JP2002353308A (en) 2001-05-28 2002-12-06 Toshiba Corp Semiconductor device and its manufacturing method
TW483099B (en) 2001-06-15 2002-04-11 United Microelectronics Corp Method to reduce moisture absorption of porous low dielectric constant film
DE10130824C2 (en) 2001-06-27 2003-12-18 Promos Technologies Inc Repair method for a dielectric film with a hole defect on a substrate
US6879046B2 (en) 2001-06-28 2005-04-12 Agere Systems Inc. Split barrier layer including nitrogen-containing portion and oxygen-containing portion
US20030008516A1 (en) 2001-07-03 2003-01-09 Ting-Chang Chang Method of reinforcing a low dielectric constant material layer against damage caused by a photoresist stripper
US6583067B2 (en) 2001-07-03 2003-06-24 United Microelectronics Corp. Method of avoiding dielectric layer deterioration with a low dielectric constant
US20030013211A1 (en) 2001-07-13 2003-01-16 Chu-Chun Hu Mend method for breakage dielectric film
TW495880B (en) 2001-08-30 2002-07-21 United Microelectronics Corp Method of repairing a low dielectric constant material layer
US6521547B1 (en) 2001-09-07 2003-02-18 United Microelectronics Corp. Method of repairing a low dielectric constant material layer
DE10145724A1 (en) 2001-09-17 2003-04-10 Infineon Technologies Ag Method of manufacturing a semiconductor structure using a protective layer and semiconductor structure
JP2003142476A (en) 2001-11-01 2003-05-16 Asahi Kasei Corp Porous silica thin film for insulation thin film
US6537919B1 (en) 2001-12-19 2003-03-25 Taiwan Semiconductor Manufacturing Company Process to remove micro-scratches
US7083991B2 (en) 2002-01-24 2006-08-01 Novellus Systems, Inc. Method of in-situ treatment of low-k films with a silylating agent after exposure to oxidizing environments
US7270941B2 (en) 2002-03-04 2007-09-18 Tokyo Electron Limited Method of passivating of low dielectric materials in wafer processing
JP4025096B2 (en) 2002-03-08 2007-12-19 株式会社荏原製作所 Substrate processing method
JP2003282698A (en) 2002-03-22 2003-10-03 Sony Corp Method for fabricating semiconductor and the same
US7381441B2 (en) 2002-04-10 2008-06-03 Honeywell International Inc. Low metal porous silica dielectric for integral circuit applications
US6607925B1 (en) 2002-06-06 2003-08-19 Advanced Micro Devices, Inc. Hard mask removal process including isolation dielectric refill
US20050229947A1 (en) 2002-06-14 2005-10-20 Mykrolis Corporation Methods of inserting or removing a species from a substrate
JP2005535554A (en) 2002-08-14 2005-11-24 アプライド シン フィルムズ，インコーポレイティッド Aluminum phosphate compounds, compositions, materials and related composites
US20050173803A1 (en) 2002-09-20 2005-08-11 Victor Lu Interlayer adhesion promoter for low k materials
US7005390B2 (en) 2002-10-09 2006-02-28 Intel Corporation Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
US6802944B2 (en) 2002-10-23 2004-10-12 Applied Materials, Inc. High density plasma CVD process for gapfill into high aspect ratio features
US7404990B2 (en) 2002-11-14 2008-07-29 Air Products And Chemicals, Inc. Non-thermal process for forming porous low dielectric constant films
EP1588411A4 (en) 2003-01-25 2008-10-01 Honeywell Int Inc Repair and restoration of damaged dielectric materials and films
US7709371B2 (en) 2003-01-25 2010-05-04 Honeywell International Inc. Repairing damage to low-k dielectric materials using silylating agents
US20040152296A1 (en) 2003-02-04 2004-08-05 Texas Instruments Incorporated Hexamethyldisilazane treatment of low-k dielectric films
JP2004266008A (en) 2003-02-28 2004-09-24 Toshiba Corp Method for manufacturing semiconductor device
US7176144B1 (en) 2003-03-31 2007-02-13 Novellus Systems, Inc. Plasma detemplating and silanol capping of porous dielectric films
US7442412B2 (en) 2003-05-08 2008-10-28 Texas Instruments Incorporated Hydrophobic coating for oxide surfaces
US7119052B2 (en) 2003-06-24 2006-10-10 Advanced Technology Materials, Inc. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
US7425505B2 (en) 2003-07-23 2008-09-16 Fsi International, Inc. Use of silyating agents
US7179758B2 (en) 2003-09-03 2007-02-20 International Business Machines Corporation Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
US8475666B2 (en) 2004-09-15 2013-07-02 Honeywell International Inc. Method for making toughening agent materials
US7553769B2 (en) 2003-10-10 2009-06-30 Tokyo Electron Limited Method for treating a dielectric film
US7345000B2 (en) 2003-10-10 2008-03-18 Tokyo Electron Limited Method and system for treating a dielectric film
US6821880B1 (en) 2003-12-01 2004-11-23 Taiwan Semiconductor Manufacturing Co. Ltd. Process of dual or single damascene utilizing separate etching and DCM apparati
JP2005294525A (en) 2004-03-31 2005-10-20 Toshiba Corp Manufacturing method of semiconductor device
WO2005109475A2 (en) 2004-05-04 2005-11-17 California Institute Of Technology Zeolite films for low k applications
US7500397B2 (en) 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films

Also Published As

Publication number Publication date
WO2002001621A3 (en) 2002-03-21
US7858294B2 (en) 2010-12-28
CA2413592A1 (en) 2002-01-03
TWI264040B (en) 2006-10-11
US7029826B2 (en) 2006-04-18
CN1279588C (en) 2006-10-11
EP1292973A2 (en) 2003-03-19
CN1502122A (en) 2004-06-02
JP2012231164A (en) 2012-11-22
US20040013858A1 (en) 2004-01-22
EP1292973B1 (en) 2015-09-09
KR20030062237A (en) 2003-07-23
WO2002001621A2 (en) 2002-01-03
JP5307963B2 (en) 2013-10-02
US20060078827A1 (en) 2006-04-13
KR100797202B1 (en) 2008-01-23
JP2004511896A (en) 2004-04-15
US20070190735A1 (en) 2007-08-16
US8440388B2 (en) 2013-05-14

Similar Documents

Publication Publication Date Title
AU2001266998A1 (en) Method to restore hydrophobicity in dielectric films and materials
AU2553499A (en) Improvements in and relating to recreational devices
AU2002211809A1 (en) Dielectric interface films and methods therefor
AU2914001A (en) Method and apparatus to reduce ozone production in ion wind devices
AU2001286589A1 (en) Surface preparation agent and surface preparation method
AU2001246843A1 (en) Novel material for use in separation and separating method using the same
AU2001234971A1 (en) Fast method for the forward and inverse mdct in audio coding
AU2001253651A1 (en) Dielectric films and related method
EP1179436A3 (en) Laminating film and laminating method using it
AU2002216703A1 (en) Method and apparatus for building and participating in virtual communities
AU2002211080A1 (en) Method and apparatus for the recycling of bituminous materials, more in particular bituminous roofcovering materials
AU2001231803A1 (en) Method in trade
AUPP135598A0 (en) Improvements in or relating to comminution devices
AU2001231806A1 (en) Method and apparatus in unwinding
AU6021700A (en) Cosmetic material sheet and method for manufacture of the sheet and apparatus for use in the manufacture
AU2000260296A1 (en) Installation and method for trading in inflation
AU2002239775A1 (en) Chemical-library composition and method
AU2001290072A1 (en) Improvements in and relating to shuttering
AU2002227028A1 (en) Contour rigid composite structure and method
AU2001296244A1 (en) Method of minimizing environmental effect in aluminides
AU3361900A (en) Method and apparatus for the recovery of compression constants in the encoded domain
AU4002797A (en) Improvements in and relating to commemorative structures
AU3413901A (en) Web page providing method and web page providing apparatus
AU2001249194A1 (en) Immunokine composition and method
AU2001255739A1 (en) Method and apparatus for manufacturing composite sheet-like materials