AU2001253651A1 - Dielectric films and related method - Google Patents

Dielectric films and related method

Info

Publication number
AU2001253651A1
AU2001253651A1 AU2001253651A AU5365101A AU2001253651A1 AU 2001253651 A1 AU2001253651 A1 AU 2001253651A1 AU 2001253651 A AU2001253651 A AU 2001253651A AU 5365101 A AU5365101 A AU 5365101A AU 2001253651 A1 AU2001253651 A1 AU 2001253651A1
Authority
AU
Australia
Prior art keywords
dielectric films
related method
dielectric
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001253651A
Inventor
Albert R. Ellingboe
Patrick M. Smith
Steven D. Theiss
Paul Wickboldt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California filed Critical University of California
Publication of AU2001253651A1 publication Critical patent/AU2001253651A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
AU2001253651A 2000-04-27 2001-04-18 Dielectric films and related method Abandoned AU2001253651A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/560,058 US6436739B1 (en) 2000-04-27 2000-04-27 Thick adherent dielectric films on plastic substrates and method for depositing same
US09560058 2000-04-27
PCT/US2001/012618 WO2001083847A2 (en) 2000-04-27 2001-04-18 Method of making dielectric films

Publications (1)

Publication Number Publication Date
AU2001253651A1 true AU2001253651A1 (en) 2001-11-12

Family

ID=24236168

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001253651A Abandoned AU2001253651A1 (en) 2000-04-27 2001-04-18 Dielectric films and related method

Country Status (4)

Country Link
US (1) US6436739B1 (en)
AU (1) AU2001253651A1 (en)
TW (1) TW530098B (en)
WO (1) WO2001083847A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10216786C5 (en) * 2002-04-15 2009-10-15 Ers Electronic Gmbh Method and apparatus for conditioning semiconductor wafers and / or hybrids
US7670936B1 (en) * 2002-10-18 2010-03-02 Advanced Micro Devices, Inc. Nitridation of gate oxide by laser processing
US6998776B2 (en) * 2003-04-16 2006-02-14 Corning Incorporated Glass package that is hermetically sealed with a frit and method of fabrication
US20040206953A1 (en) * 2003-04-16 2004-10-21 Robert Morena Hermetically sealed glass package and method of fabrication
US7700167B2 (en) * 2006-08-31 2010-04-20 Honeywell International Inc. Erosion-protective coatings on polymer-matrix composites and components incorporating such coated composites
TW201001624A (en) * 2008-01-24 2010-01-01 Soligie Inc Silicon thin film transistors, systems, and methods of making same
US20100095705A1 (en) 2008-10-20 2010-04-22 Burkhalter Robert S Method for forming a dry glass-based frit
TWI408249B (en) * 2009-07-28 2013-09-11 Univ Nat Formosa A method to prepare consecutive organic/inorganic multilayered vapor barrier structure onto the flexible plastic substrates using plasma enhanced chemical vapor deposition and its product
KR20130017312A (en) * 2011-08-10 2013-02-20 삼성디스플레이 주식회사 Display device
CN103681869A (en) * 2012-08-31 2014-03-26 群康科技(深圳)有限公司 Thin film transistor substrate, manufacturing method for thin film transistor substrate, and display
US9741921B2 (en) * 2013-11-13 2017-08-22 The United States Of America As Represented By The Secretary Of The Navy Hydrogen free amorphous silicon as insulating dielectric material for superconducting quantum bits
CN105734494B (en) * 2016-04-12 2018-12-25 京东方科技集团股份有限公司 A kind of vapor deposition support plate and evaporation coating device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855017A (en) * 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
EP0311302B1 (en) 1987-10-07 1992-06-24 THORN EMI plc Apparatus and method for the production of a coating on a web
KR0165898B1 (en) * 1990-07-02 1999-02-01 미다 가쓰시게 Vacuum processing method and apparatus
US5082542A (en) * 1990-08-02 1992-01-21 Texas Instruments Incorporated Distributed-array magnetron-plasma processing module and method
US5230929A (en) 1992-07-20 1993-07-27 Dow Corning Corporation Plasma-activated chemical vapor deposition of fluoridated cyclic siloxanes
JP2928664B2 (en) * 1991-08-12 1999-08-03 株式会社東芝 Silicon oxide film forming method and film forming apparatus used for this method
KR0164618B1 (en) * 1992-02-13 1999-02-01 이노우에 쥰이치 Plasma process method using an electrostatic chuck
US5382311A (en) * 1992-12-17 1995-01-17 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
DE4412906C1 (en) 1994-04-14 1995-07-13 Fraunhofer Ges Forschung Ion-assisted vacuum coating
US5538758A (en) * 1995-10-27 1996-07-23 Specialty Coating Systems, Inc. Method and apparatus for the deposition of parylene AF4 onto semiconductor wafers
US5817550A (en) 1996-03-05 1998-10-06 Regents Of The University Of California Method for formation of thin film transistors on plastic substrates
DE19612345C1 (en) * 1996-03-28 1997-01-16 Fraunhofer Ges Forschung Process for plasma-activated high-speed vapor deposition of large-area substrates
US6110544A (en) 1997-06-26 2000-08-29 General Electric Company Protective coating by high rate arc plasma deposition
US6207472B1 (en) * 1999-03-09 2001-03-27 International Business Machines Corporation Low temperature thin film transistor fabrication

Also Published As

Publication number Publication date
US6436739B1 (en) 2002-08-20
WO2001083847A2 (en) 2001-11-08
WO2001083847A3 (en) 2002-01-24
TW530098B (en) 2003-05-01

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