JP2012084789A - 半導体装置の製造方法および半導体製造装置 - Google Patents
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Abstract
【解決手段】所定のパターンにエッチング加工した被加工物に対してパターン間に絶縁膜を埋め込み形成する半導体装置の製造方法である。前記被加工物のエッチング加工された前記パターン間のエッチング残渣を第1の薬液により洗浄する工程と、前記第1の薬液による洗浄の後前記被加工物をリンス液でリンスする工程と、前記リンスの後前記被加工物に絶縁膜形成用の塗布液を塗布する工程とを備える。前記第1の薬液による洗浄から前記塗布液の塗布までを、前記被加工物が前記パターン間で液体を保持した状態を維持するように同一の処理室内で実施することを特徴とする。
【選択図】図1
Description
尚、以下の図面の記載において、同一又は類似の部分は同一又は類似の符号で表している。但し、図面は模式的なものであり、各層の厚みの比率等は現実のものとは異なる。
(第2の薬液) イソプロピルアルコールB RC2
(第3の薬液) ジブチルエーテルC RC3
(塗布液) ポリシラザン塗布液D RCX
(溶媒としてジブチルエーテルを用いている)
また、上記の比RCw、RC2、RC3、RCXは次の式(1)の関係を満たしている。
ここで、水の分子は、OHを有するがCHxを有していないので、RCwは無限大であるとする。これにより、水のRCwはOHおよびCHを有するイソプロピルアルコールBのRC2よりも大きい。ジブチルエーテルCの分子はOHを持たないので、RC3はゼロであり、同様にポリシラザン塗布液の溶媒もジブチルエーテルであるからRCXはゼロである。したがって、RCw>RC2>RC3=RCXとなるので、式(1)を満たしている。
半導体装置が多数形成されるウエハ33は、RIE法によるドライエッチング工程でエッチング処理され、これによって高アスペクト比のラインアンドスペースパターンが形成されている。そして、このエッチング工程が終了した時点で、図4のトレンチ1aあるいは図5の分離領域20の側壁部には、エッチング残渣6あるいは21が付着した状態となっている。
Claims (5)
- 所定のパターンにエッチング加工した被加工物に対してパターン間に絶縁膜を埋め込み形成する半導体装置の製造方法であって、
前記被加工物のエッチング加工された前記パターン間のエッチング残渣を第1の薬液により洗浄する工程と、
前記第1の薬液による洗浄の後前記被加工物をリンス液でリンスする工程と、
前記リンスの後前記被加工物に絶縁膜形成用の塗布液を塗布する工程とを備えてなり、
前記第1の薬液による洗浄から前記塗布液の塗布までを、前記被加工物が前記パターン間で液体を保持した状態を維持するように同一の処理室内で実施することを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記リンスの後前記塗布液の塗布の前に前記被加工物に第2の薬液を供給して前記パターン間に残存する前記リンス液を前記第2の薬液に置換する工程をさらに備えたことを特徴とする半導体装置の製造方法。 - 所定のパターンにエッチング加工した被加工物に対してパターン間に絶縁膜を埋め込み形成する半導体装置の製造方法であって、
前記被加工物のエッチング加工された前記パターン間のエッチング残渣を第1の薬液により洗浄する工程と、
前記第1の薬液による洗浄の後前記被加工物をリンス液でリンスする工程と、
前記リンスの後前記被加工物に第2の薬液を供給して前記パターン間に残存する前記リンス液を前記第2の薬液に置換する工程と、
前記置換の後前記被加工物に絶縁膜形成用の塗布液を塗布する工程とを備え、
前記第1の薬液による洗浄から前記塗布液の塗布までを、前記被加工物が前記パターン間で液体を保持した状態を維持するように実施し、
前記第2の薬液は、1分子あたりのCHの数をNCH,OHの数をNOHとしたときに、前記第2の薬液のNOH/NCHの値(比)RC2が、前記リンス液のNOH/NCHの値(比)RCwより小さく且つ前記塗布液のNOH/NCHの値(比)RCXより大きいものが用いられることを特徴とする半導体装置の製造方法。 - 請求項1ないし3のいずれかに記載の半導体装置の製造方法において、
前記第1の薬液による洗浄の後前記リンスの前にオゾン(O3)水あるいは過酸化水素(H2O2)水を含む溶液を供給して前記被加工物の表面を酸化する工程をさらに備えたことを特徴とする半導体装置の製造方法。 - 洗浄対象の半導体基板を載置する載置部と、
洗浄用の薬液を含む複数の薬液を前記載置部上の前記半導体基板に供給するための複数のノズルと、
前記ノズルにより供給され前記半導体基板上に残留した薬液が、前記ノズルにより他の薬液を供給することで置換するように、前記ノズルによる前記複数の薬液の前記半導体基板への供給を制御する制御手段と、
前記半導体基板上に供給した薬液の溶媒を揮発させるためのホットプレートとを備えたことを特徴とする半導体製造装置。
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JP2010231502A JP2012084789A (ja) | 2010-10-14 | 2010-10-14 | 半導体装置の製造方法および半導体製造装置 |
KR1020110086854A KR101282472B1 (ko) | 2010-10-14 | 2011-08-30 | 반도체 장치의 제조 방법 및 반도체 제조 장치 |
US13/236,306 US8557705B2 (en) | 2010-10-14 | 2011-09-19 | Method of manufacturing semiconductor device and apparatus for manufacturing semiconductor device |
US14/024,676 US9190262B2 (en) | 2010-10-14 | 2013-09-12 | Method of manufacturing semiconductor device and apparatus for manufacturing semiconductor device |
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US9437599B2 (en) | 2014-08-12 | 2016-09-06 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method of manufacturing the same |
US11921428B2 (en) | 2011-07-05 | 2024-03-05 | Kioxia Corporation | Substrate processing method and substrate processing apparatus |
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US20140060575A1 (en) * | 2012-08-31 | 2014-03-06 | Semes Co. Ltd | Substrate treating method |
US10008396B2 (en) | 2014-10-06 | 2018-06-26 | Lam Research Corporation | Method for collapse-free drying of high aspect ratio structures |
JP2019520289A (ja) * | 2016-04-26 | 2019-07-18 | ピルキントン グループ リミテッド | 耐腐食性コーティングガラス基板 |
KR102628534B1 (ko) * | 2016-09-13 | 2024-01-26 | 에스케이하이닉스 주식회사 | 반도체 기판의 처리 방법 |
US10957530B2 (en) | 2017-12-19 | 2021-03-23 | Micron Technology, Inc. | Freezing a sacrificial material in forming a semiconductor |
CN113161259A (zh) * | 2020-01-23 | 2021-07-23 | 东京毅力科创株式会社 | 基板处理装置、基板处理方法和化学溶液 |
CN113394074A (zh) * | 2020-03-11 | 2021-09-14 | 长鑫存储技术有限公司 | 半导体结构的处理方法 |
CN113948366A (zh) * | 2020-07-16 | 2022-01-18 | 长鑫存储技术有限公司 | 改善沟槽表面结构缺陷的方法及半导体结构的制备方法 |
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JP2007180379A (ja) * | 2005-12-28 | 2007-07-12 | Ses Co Ltd | 基板処理方法及び基板処理装置 |
JP2010114414A (ja) * | 2008-06-16 | 2010-05-20 | Toshiba Corp | 半導体基板の表面処理方法 |
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US11921428B2 (en) | 2011-07-05 | 2024-03-05 | Kioxia Corporation | Substrate processing method and substrate processing apparatus |
US9437599B2 (en) | 2014-08-12 | 2016-09-06 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method of manufacturing the same |
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KR101282472B1 (ko) | 2013-07-04 |
KR20120038888A (ko) | 2012-04-24 |
US20140014142A1 (en) | 2014-01-16 |
US8557705B2 (en) | 2013-10-15 |
US20120094493A1 (en) | 2012-04-19 |
US9190262B2 (en) | 2015-11-17 |
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