TWI398920B - Surface treatment of substrates - Google Patents
Surface treatment of substrates Download PDFInfo
- Publication number
- TWI398920B TWI398920B TW095105956A TW95105956A TWI398920B TW I398920 B TWI398920 B TW I398920B TW 095105956 A TW095105956 A TW 095105956A TW 95105956 A TW95105956 A TW 95105956A TW I398920 B TWI398920 B TW I398920B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- washing
- layer
- wafer
- surface treatment
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 229
- 238000004381 surface treatment Methods 0.000 title claims description 58
- 238000000034 method Methods 0.000 claims description 252
- 230000008569 process Effects 0.000 claims description 146
- 238000004140 cleaning Methods 0.000 claims description 128
- 238000005406 washing Methods 0.000 claims description 98
- 239000007789 gas Substances 0.000 claims description 97
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 68
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 66
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 62
- 238000011282 treatment Methods 0.000 claims description 56
- 238000001035 drying Methods 0.000 claims description 51
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims description 30
- 239000000126 substance Substances 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 28
- 239000007788 liquid Substances 0.000 claims description 27
- 239000000243 solution Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 20
- 229910021529 ammonia Inorganic materials 0.000 claims description 18
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 9
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 9
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 9
- 230000005661 hydrophobic surface Effects 0.000 claims description 6
- 238000005108 dry cleaning Methods 0.000 claims description 5
- 230000002209 hydrophobic effect Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000012545 processing Methods 0.000 description 237
- 235000012431 wafers Nutrition 0.000 description 192
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 63
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 55
- 239000010410 layer Substances 0.000 description 53
- 238000012546 transfer Methods 0.000 description 38
- 239000000047 product Substances 0.000 description 28
- 229910004298 SiO 2 Inorganic materials 0.000 description 25
- 238000006243 chemical reaction Methods 0.000 description 25
- 238000011109 contamination Methods 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000002245 particle Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 16
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 238000004380 ashing Methods 0.000 description 12
- 238000011068 loading method Methods 0.000 description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 6
- 238000004891 communication Methods 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000012805 post-processing Methods 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical group [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000001263 FEMA 3042 Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- QHEDSQMUHIMDOL-UHFFFAOYSA-J hafnium(4+);tetrafluoride Chemical compound F[Hf](F)(F)F QHEDSQMUHIMDOL-UHFFFAOYSA-J 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- G—PHYSICS
- G07—CHECKING-DEVICES
- G07F—COIN-FREED OR LIKE APPARATUS
- G07F17/00—Coin-freed apparatus for hiring articles; Coin-freed facilities or services
- G07F17/32—Coin-freed apparatus for hiring articles; Coin-freed facilities or services for games, toys, sports, or amusements
- G07F17/3202—Hardware aspects of a gaming system, e.g. components, construction, architecture thereof
- G07F17/3204—Player-machine interfaces
- G07F17/3211—Display means
-
- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63F—CARD, BOARD, OR ROULETTE GAMES; INDOOR GAMES USING SMALL MOVING PLAYING BODIES; VIDEO GAMES; GAMES NOT OTHERWISE PROVIDED FOR
- A63F13/00—Video games, i.e. games using an electronically generated display having two or more dimensions
- A63F13/90—Constructional details or arrangements of video game devices not provided for in groups A63F13/20 or A63F13/25, e.g. housing, wiring, connections or cabinets
-
- G—PHYSICS
- G07—CHECKING-DEVICES
- G07F—COIN-FREED OR LIKE APPARATUS
- G07F17/00—Coin-freed apparatus for hiring articles; Coin-freed facilities or services
- G07F17/32—Coin-freed apparatus for hiring articles; Coin-freed facilities or services for games, toys, sports, or amusements
- G07F17/34—Coin-freed apparatus for hiring articles; Coin-freed facilities or services for games, toys, sports, or amusements depending on the stopping of moving members in a mechanical slot machine, e.g. "fruit" machines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63F—CARD, BOARD, OR ROULETTE GAMES; INDOOR GAMES USING SMALL MOVING PLAYING BODIES; VIDEO GAMES; GAMES NOT OTHERWISE PROVIDED FOR
- A63F9/00—Games not otherwise provided for
- A63F9/24—Electric games; Games using electronic circuits not otherwise provided for
- A63F2009/2448—Output devices
- A63F2009/245—Output devices visual
- A63F2009/2457—Display screens, e.g. monitors, video displays
-
- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63F—CARD, BOARD, OR ROULETTE GAMES; INDOOR GAMES USING SMALL MOVING PLAYING BODIES; VIDEO GAMES; GAMES NOT OTHERWISE PROVIDED FOR
- A63F2250/00—Miscellaneous game characteristics
- A63F2250/14—Coin operated
- A63F2250/142—Coin operated with pay-out or rewarding with a prize
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005047361 | 2005-02-23 | ||
| JP2005278844A JP4895256B2 (ja) | 2005-02-23 | 2005-09-26 | 基板の表面処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200723391A TW200723391A (en) | 2007-06-16 |
| TWI398920B true TWI398920B (zh) | 2013-06-11 |
Family
ID=36636246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095105956A TWI398920B (zh) | 2005-02-23 | 2006-02-22 | Surface treatment of substrates |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1696476B1 (enExample) |
| JP (1) | JP4895256B2 (enExample) |
| KR (1) | KR100832164B1 (enExample) |
| TW (1) | TWI398920B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100854455B1 (ko) * | 2006-06-30 | 2008-08-27 | 주식회사 하이닉스반도체 | 반도체 소자의 워터마크 제거방법 |
| JP5143808B2 (ja) | 2009-10-08 | 2013-02-13 | 本田技研工業株式会社 | 撮像装置、撮像システム及び演算方法 |
| JP5424848B2 (ja) | 2009-12-15 | 2014-02-26 | 株式会社東芝 | 半導体基板の表面処理装置及び方法 |
| KR101271248B1 (ko) * | 2011-08-02 | 2013-06-07 | 주식회사 유진테크 | 에피택셜 공정을 위한 반도체 제조설비 |
| US9461144B2 (en) * | 2014-06-13 | 2016-10-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for semiconductor device fabrication |
| JP6934376B2 (ja) | 2017-09-20 | 2021-09-15 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| US11437229B2 (en) | 2018-01-09 | 2022-09-06 | SCREEN Holdings Co., Ltd. | Substrate processing method |
| CN108447774B (zh) * | 2018-03-29 | 2023-05-26 | 长鑫存储技术有限公司 | 同时去除热氧化膜和去除沉积氧化膜的方法及设备 |
| KR102796895B1 (ko) * | 2022-03-30 | 2025-04-17 | 야마하 로보틱스 홀딩스 가부시키가이샤 | 전자 부품 세정 장치 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5171393A (en) * | 1991-07-29 | 1992-12-15 | Moffat William A | Wafer processing apparatus |
| US5282925A (en) * | 1992-11-09 | 1994-02-01 | International Business Machines Corporation | Device and method for accurate etching and removal of thin film |
| US5896875A (en) * | 1995-09-01 | 1999-04-27 | Matsushita Electronics Corporation | Equipment for cleaning, etching and drying semiconductor wafer and its using method |
| US6486072B1 (en) * | 2000-10-23 | 2002-11-26 | Advanced Micro Devices, Inc. | System and method to facilitate removal of defects from a substrate |
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| US20040002220A1 (en) * | 2001-08-30 | 2004-01-01 | Kabushiki Kaisha Toshiba | Method of purging semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
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| JPS6345822A (ja) * | 1986-08-13 | 1988-02-26 | Hitachi Ltd | クリ−ニング方法および装置 |
| JPH06163508A (ja) * | 1992-11-27 | 1994-06-10 | Fuji Electric Co Ltd | 基板の乾燥方法および装置 |
| JPH06314679A (ja) * | 1993-04-30 | 1994-11-08 | Sony Corp | 半導体基板の洗浄方法 |
| JPH06337193A (ja) * | 1993-05-27 | 1994-12-06 | Tokyo Hightech Kk | 真空乾燥装置 |
| JP2927768B1 (ja) | 1998-03-26 | 1999-07-28 | 技術研究組合オングストロームテクノロジ研究機構 | 半導体装置およびその製造方法 |
| KR100416592B1 (ko) * | 2001-02-10 | 2004-02-05 | 삼성전자주식회사 | 매엽식 웨이퍼 세정 장치 및 이를 이용한 웨이퍼 세정 방법 |
| JP3421329B2 (ja) * | 2001-06-08 | 2003-06-30 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法 |
| US6858532B2 (en) * | 2002-12-10 | 2005-02-22 | International Business Machines Corporation | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling |
| JP4187540B2 (ja) * | 2003-01-31 | 2008-11-26 | 大日本スクリーン製造株式会社 | 基板処理方法 |
| JP4039385B2 (ja) * | 2003-04-22 | 2008-01-30 | 東京エレクトロン株式会社 | ケミカル酸化膜の除去方法 |
-
2005
- 2005-09-26 JP JP2005278844A patent/JP4895256B2/ja not_active Expired - Fee Related
-
2006
- 2006-02-22 TW TW095105956A patent/TWI398920B/zh not_active IP Right Cessation
- 2006-02-22 KR KR1020060017330A patent/KR100832164B1/ko not_active Expired - Fee Related
- 2006-02-23 EP EP06003683.7A patent/EP1696476B1/en not_active Not-in-force
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5171393A (en) * | 1991-07-29 | 1992-12-15 | Moffat William A | Wafer processing apparatus |
| US5282925A (en) * | 1992-11-09 | 1994-02-01 | International Business Machines Corporation | Device and method for accurate etching and removal of thin film |
| US5896875A (en) * | 1995-09-01 | 1999-04-27 | Matsushita Electronics Corporation | Equipment for cleaning, etching and drying semiconductor wafer and its using method |
| US20020189640A1 (en) * | 1998-04-21 | 2002-12-19 | Jack H. Linn | Sc-2 based pre-thermal treatment wafer cleaning process |
| US6486072B1 (en) * | 2000-10-23 | 2002-11-26 | Advanced Micro Devices, Inc. | System and method to facilitate removal of defects from a substrate |
| US20040002220A1 (en) * | 2001-08-30 | 2004-01-01 | Kabushiki Kaisha Toshiba | Method of purging semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1696476B1 (en) | 2015-02-18 |
| JP2006270032A (ja) | 2006-10-05 |
| JP4895256B2 (ja) | 2012-03-14 |
| KR20060024832A (ko) | 2006-03-17 |
| EP1696476A3 (en) | 2009-12-09 |
| TW200723391A (en) | 2007-06-16 |
| EP1696476A2 (en) | 2006-08-30 |
| KR100832164B1 (ko) | 2008-05-23 |
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