TW200515532A - Method of forming a low k dielectric in a semiconductor manufacturing process - Google Patents
Method of forming a low k dielectric in a semiconductor manufacturing processInfo
- Publication number
- TW200515532A TW200515532A TW093125368A TW93125368A TW200515532A TW 200515532 A TW200515532 A TW 200515532A TW 093125368 A TW093125368 A TW 093125368A TW 93125368 A TW93125368 A TW 93125368A TW 200515532 A TW200515532 A TW 200515532A
- Authority
- TW
- Taiwan
- Prior art keywords
- low
- dielectric
- barrier layer
- layer
- forming
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000004888 barrier function Effects 0.000 abstract 6
- 239000002131 composite material Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- 206010053317 Hydrophobia Diseases 0.000 abstract 1
- 206010037742 Rabies Diseases 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000002209 hydrophobic effect Effects 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/690,060 US6902440B2 (en) | 2003-10-21 | 2003-10-21 | Method of forming a low K dielectric in a semiconductor manufacturing process |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200515532A true TW200515532A (en) | 2005-05-01 |
Family
ID=34521542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093125368A TW200515532A (en) | 2003-10-21 | 2004-08-23 | Method of forming a low k dielectric in a semiconductor manufacturing process |
Country Status (6)
Country | Link |
---|---|
US (1) | US6902440B2 (zh) |
JP (1) | JP4659751B2 (zh) |
KR (1) | KR101054676B1 (zh) |
CN (1) | CN100501937C (zh) |
TW (1) | TW200515532A (zh) |
WO (1) | WO2005045914A1 (zh) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6913992B2 (en) | 2003-03-07 | 2005-07-05 | Applied Materials, Inc. | Method of modifying interlayer adhesion |
US7253125B1 (en) | 2004-04-16 | 2007-08-07 | Novellus Systems, Inc. | Method to improve mechanical strength of low-k dielectric film using modulated UV exposure |
US7112541B2 (en) * | 2004-05-06 | 2006-09-26 | Applied Materials, Inc. | In-situ oxide capping after CVD low k deposition |
US9659769B1 (en) | 2004-10-22 | 2017-05-23 | Novellus Systems, Inc. | Tensile dielectric films using UV curing |
US8980769B1 (en) | 2005-04-26 | 2015-03-17 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
US8454750B1 (en) | 2005-04-26 | 2013-06-04 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
US8889233B1 (en) | 2005-04-26 | 2014-11-18 | Novellus Systems, Inc. | Method for reducing stress in porous dielectric films |
US7189658B2 (en) * | 2005-05-04 | 2007-03-13 | Applied Materials, Inc. | Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile |
US7273823B2 (en) * | 2005-06-03 | 2007-09-25 | Applied Materials, Inc. | Situ oxide cap layer development |
US7498270B2 (en) * | 2005-09-30 | 2009-03-03 | Tokyo Electron Limited | Method of forming a silicon oxynitride film with tensile stress |
JP4422671B2 (ja) * | 2005-12-06 | 2010-02-24 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
US8987085B2 (en) * | 2006-08-01 | 2015-03-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for improving uniformity of cap layers |
US20100267231A1 (en) * | 2006-10-30 | 2010-10-21 | Van Schravendijk Bart | Apparatus for uv damage repair of low k films prior to copper barrier deposition |
US8465991B2 (en) | 2006-10-30 | 2013-06-18 | Novellus Systems, Inc. | Carbon containing low-k dielectric constant recovery using UV treatment |
US7851232B2 (en) * | 2006-10-30 | 2010-12-14 | Novellus Systems, Inc. | UV treatment for carbon-containing low-k dielectric repair in semiconductor processing |
US10037905B2 (en) * | 2009-11-12 | 2018-07-31 | Novellus Systems, Inc. | UV and reducing treatment for K recovery and surface clean in semiconductor processing |
US8211510B1 (en) | 2007-08-31 | 2012-07-03 | Novellus Systems, Inc. | Cascaded cure approach to fabricate highly tensile silicon nitride films |
KR100928502B1 (ko) * | 2007-11-05 | 2009-11-26 | 주식회사 동부하이텍 | 반도체 소자 및 그의 제조 방법 |
US9050623B1 (en) | 2008-09-12 | 2015-06-09 | Novellus Systems, Inc. | Progressive UV cure |
JP5507909B2 (ja) | 2009-07-14 | 2014-05-28 | 東京エレクトロン株式会社 | 成膜方法 |
JP5398853B2 (ja) * | 2012-01-26 | 2014-01-29 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
CN103854962B (zh) * | 2012-11-28 | 2017-05-17 | 中芯国际集成电路制造(上海)有限公司 | 晶圆刻蚀后的清洗方法 |
CN104681404A (zh) * | 2013-11-27 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | 接触孔的制作方法和半导体器件的湿法清洗方法 |
US9437484B2 (en) * | 2014-10-17 | 2016-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Etch stop layer in integrated circuits |
KR101611133B1 (ko) * | 2015-05-18 | 2016-04-08 | 성균관대학교산학협력단 | 3차원 구조의 가스 센서 및 이의 제조방법 |
US10008382B2 (en) | 2015-07-30 | 2018-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having a porous low-k structure |
US9847221B1 (en) | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
JP6989207B2 (ja) * | 2018-05-15 | 2022-01-05 | 住友電工デバイス・イノベーション株式会社 | キャパシタの製造方法 |
CN109994371B (zh) * | 2019-03-26 | 2021-10-15 | 上海华力集成电路制造有限公司 | 一种改善氮掺杂碳化物堆叠后的清洁产生水痕的方法 |
CN110444468A (zh) * | 2019-08-29 | 2019-11-12 | 上海华力微电子有限公司 | 一种消除生成硬掩模ndc层后产生的凸块缺陷的方法 |
KR102665267B1 (ko) * | 2022-10-06 | 2024-05-13 | 한국생명공학연구원 | 감도가 개선된 국소 표면 플라즈몬 공명 센서 및 이의 제조방법 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US114000A (en) * | 1871-04-25 | Improvement in buggies | ||
US68853A (en) * | 1867-09-17 | peters | ||
US87534A (en) * | 1869-03-09 | Improvement in feather-renovators | ||
US1089643A (en) * | 1913-04-02 | 1914-03-10 | William O Hoppe | Preboiler for steam-boilers. |
US5607773A (en) * | 1994-12-20 | 1997-03-04 | Texas Instruments Incorporated | Method of forming a multilevel dielectric |
US5944906A (en) * | 1996-05-24 | 1999-08-31 | Micron Technology Inc | Wet cleans for composite surfaces |
JP3028080B2 (ja) * | 1997-06-18 | 2000-04-04 | 日本電気株式会社 | 半導体装置の構造およびその製造方法 |
JPH11251312A (ja) * | 1998-03-06 | 1999-09-17 | Matsushita Electron Corp | 半導体装置の製造方法 |
US6468362B1 (en) | 1999-08-25 | 2002-10-22 | Applied Materials, Inc. | Method and apparatus for cleaning/drying hydrophobic wafers |
US6531412B2 (en) | 2001-08-10 | 2003-03-11 | International Business Machines Corporation | Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications |
US20030087534A1 (en) | 2001-09-10 | 2003-05-08 | Rensselaer Polytechnic Institute | Surface modification for barrier to ionic penetration |
CN1179613C (zh) * | 2001-09-20 | 2004-12-08 | 联华电子股份有限公司 | 一种改善有机低介电常数层附着力的表面处理方法 |
JP2003188254A (ja) | 2001-12-18 | 2003-07-04 | Hitachi Ltd | 半導体装置の製造方法および半導体装置 |
US20030155657A1 (en) * | 2002-02-14 | 2003-08-21 | Nec Electronics Corporation | Manufacturing method of semiconductor device |
US6812167B2 (en) * | 2002-06-05 | 2004-11-02 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for improving adhesion between dielectric material layers |
-
2003
- 2003-10-21 US US10/690,060 patent/US6902440B2/en not_active Expired - Fee Related
-
2004
- 2004-07-30 WO PCT/US2004/024904 patent/WO2005045914A1/en active Application Filing
- 2004-07-30 KR KR1020067007734A patent/KR101054676B1/ko not_active IP Right Cessation
- 2004-07-30 CN CNB2004800290719A patent/CN100501937C/zh not_active Expired - Fee Related
- 2004-07-30 JP JP2006536603A patent/JP4659751B2/ja not_active Expired - Fee Related
- 2004-08-23 TW TW093125368A patent/TW200515532A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP2007509499A (ja) | 2007-04-12 |
US6902440B2 (en) | 2005-06-07 |
CN1864251A (zh) | 2006-11-15 |
WO2005045914A1 (en) | 2005-05-19 |
US20050085082A1 (en) | 2005-04-21 |
KR20060101758A (ko) | 2006-09-26 |
CN100501937C (zh) | 2009-06-17 |
JP4659751B2 (ja) | 2011-03-30 |
KR101054676B1 (ko) | 2011-08-08 |
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