JP2009194388A5 - - Google Patents

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Publication number
JP2009194388A5
JP2009194388A5 JP2009031414A JP2009031414A JP2009194388A5 JP 2009194388 A5 JP2009194388 A5 JP 2009194388A5 JP 2009031414 A JP2009031414 A JP 2009031414A JP 2009031414 A JP2009031414 A JP 2009031414A JP 2009194388 A5 JP2009194388 A5 JP 2009194388A5
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JP
Japan
Prior art keywords
semiconductor laser
mounting block
semiconductor
mounting
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009031414A
Other languages
English (en)
Japanese (ja)
Other versions
JP5517465B2 (ja
JP2009194388A (ja
Filing date
Publication date
Priority claimed from DE102008009108A external-priority patent/DE102008009108A1/de
Application filed filed Critical
Publication of JP2009194388A publication Critical patent/JP2009194388A/ja
Publication of JP2009194388A5 publication Critical patent/JP2009194388A5/ja
Application granted granted Critical
Publication of JP5517465B2 publication Critical patent/JP5517465B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009031414A 2008-02-14 2009-02-13 半導体レーザの製造方法 Active JP5517465B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008009108.1 2008-02-14
DE102008009108A DE102008009108A1 (de) 2008-02-14 2008-02-14 Verfahren zur Herstellung eines Halbleiterlasers sowie Halbleiterlaser

Publications (3)

Publication Number Publication Date
JP2009194388A JP2009194388A (ja) 2009-08-27
JP2009194388A5 true JP2009194388A5 (enExample) 2012-03-01
JP5517465B2 JP5517465B2 (ja) 2014-06-11

Family

ID=40428207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009031414A Active JP5517465B2 (ja) 2008-02-14 2009-02-13 半導体レーザの製造方法

Country Status (4)

Country Link
US (1) US7995633B2 (enExample)
EP (1) EP2091116B1 (enExample)
JP (1) JP5517465B2 (enExample)
DE (1) DE102008009108A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008009110A1 (de) * 2008-02-14 2009-08-20 Osram Opto Semiconductors Gmbh Halbleiterlasermodul
KR101715761B1 (ko) 2010-12-31 2017-03-14 삼성전자주식회사 반도체 패키지 및 그 제조방법
DE102012107409B4 (de) * 2012-08-13 2022-06-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiter-Laserelements
DE102013224420A1 (de) * 2013-05-13 2014-11-13 Osram Gmbh Laserbauelement und Verfahren zur seiner Herstellung
DE102016101942B4 (de) * 2016-02-04 2022-07-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer optoelektronischen Leuchtvorrichtung

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03286547A (ja) * 1990-04-02 1991-12-17 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JPH10335383A (ja) * 1997-05-28 1998-12-18 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP3810529B2 (ja) * 1997-09-05 2006-08-16 株式会社フジクラ 光部品の組立方法
JP4897133B2 (ja) * 1999-12-09 2012-03-14 ソニー株式会社 半導体発光素子、その製造方法および配設基板
JP2001230492A (ja) * 2000-02-21 2001-08-24 Fuji Photo Film Co Ltd 半導体発光装置
CN1292494C (zh) * 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
US6680959B2 (en) * 2000-07-18 2004-01-20 Rohm Co., Ltd. Semiconductor light emitting device and semiconductor laser
US20030099273A1 (en) * 2001-01-09 2003-05-29 Murry Stefan J. Method and apparatus for coupling a surface-emitting laser to an external device
CN1224148C (zh) 2001-02-20 2005-10-19 奥斯兰姆奥普托半导体有限责任公司 光抽运的表面发射半导体激光器件及其制造方法
JP4242599B2 (ja) * 2002-04-08 2009-03-25 パナソニック株式会社 窒化物半導体装置の製造方法及び窒化物半導体基板の製造方法
US6936929B1 (en) * 2003-03-17 2005-08-30 National Semiconductor Corporation Multichip packages with exposed dice
JP3794489B2 (ja) * 2003-06-18 2006-07-05 セイコーエプソン株式会社 光通信モジュール及びその製造方法、光通信装置、電子機器
TWI240434B (en) * 2003-06-24 2005-09-21 Osram Opto Semiconductors Gmbh Method to produce semiconductor-chips
US7164702B1 (en) * 2003-08-29 2007-01-16 The United States Of America As Represented By The Secretary Of The Army Optical transmitters and interconnects using surface-emitting lasers and micro-optical elements
JP4439313B2 (ja) * 2004-03-31 2010-03-24 三洋電機株式会社 光学モジュールの製造方法
US7408199B2 (en) * 2004-04-02 2008-08-05 Nichia Corporation Nitride semiconductor laser device and nitride semiconductor device
JP4614715B2 (ja) * 2004-08-31 2011-01-19 三洋電機株式会社 半導体レーザ装置およびその製造方法
US7817695B2 (en) * 2004-09-22 2010-10-19 Osram Opto Semiconductors Gmbh Lateral optically pumped surface-emitting semiconductor laser on a heat sink
US7932111B2 (en) * 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
DE102005053274A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Mehrzahl von Halbleiterchips und Halbleiterbauelement
DE102006017293A1 (de) * 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer optisch pumpbaren Halbleitervorrichtung
DE102006017294A1 (de) * 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh Optisch pumpbare Halbleitervorrichtung
DE102006033502A1 (de) 2006-05-03 2007-11-15 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper mit Trägersubstrat und Verfahren zur Herstellung eines solchen
DE102006042196A1 (de) * 2006-06-30 2008-01-03 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterkörper mit vertikaler Emissionsrichtung und stabilisierter Emissionswellenlänge
JP4948307B2 (ja) * 2006-07-31 2012-06-06 三洋電機株式会社 半導体レーザ素子およびその製造方法

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