JP5517465B2 - 半導体レーザの製造方法 - Google Patents

半導体レーザの製造方法 Download PDF

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Publication number
JP5517465B2
JP5517465B2 JP2009031414A JP2009031414A JP5517465B2 JP 5517465 B2 JP5517465 B2 JP 5517465B2 JP 2009031414 A JP2009031414 A JP 2009031414A JP 2009031414 A JP2009031414 A JP 2009031414A JP 5517465 B2 JP5517465 B2 JP 5517465B2
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Prior art keywords
semiconductor laser
wafer
semiconductor
support wafer
laser chip
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JP2009031414A
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English (en)
Japanese (ja)
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JP2009194388A5 (enExample
JP2009194388A (ja
Inventor
ダッハス ユルゲン
イレク シュテファン
シュルツ ローラント
シュヴァルツ トーマス
ジンガー フランク
ウーノルト ハイコ
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of JP2009194388A publication Critical patent/JP2009194388A/ja
Publication of JP2009194388A5 publication Critical patent/JP2009194388A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2009031414A 2008-02-14 2009-02-13 半導体レーザの製造方法 Active JP5517465B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008009108.1 2008-02-14
DE102008009108A DE102008009108A1 (de) 2008-02-14 2008-02-14 Verfahren zur Herstellung eines Halbleiterlasers sowie Halbleiterlaser

Publications (3)

Publication Number Publication Date
JP2009194388A JP2009194388A (ja) 2009-08-27
JP2009194388A5 JP2009194388A5 (enExample) 2012-03-01
JP5517465B2 true JP5517465B2 (ja) 2014-06-11

Family

ID=40428207

Family Applications (1)

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JP2009031414A Active JP5517465B2 (ja) 2008-02-14 2009-02-13 半導体レーザの製造方法

Country Status (4)

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US (1) US7995633B2 (enExample)
EP (1) EP2091116B1 (enExample)
JP (1) JP5517465B2 (enExample)
DE (1) DE102008009108A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008009110A1 (de) * 2008-02-14 2009-08-20 Osram Opto Semiconductors Gmbh Halbleiterlasermodul
KR101715761B1 (ko) 2010-12-31 2017-03-14 삼성전자주식회사 반도체 패키지 및 그 제조방법
DE102012107409B4 (de) * 2012-08-13 2022-06-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiter-Laserelements
DE102013224420A1 (de) * 2013-05-13 2014-11-13 Osram Gmbh Laserbauelement und Verfahren zur seiner Herstellung
DE102016101942B4 (de) * 2016-02-04 2022-07-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer optoelektronischen Leuchtvorrichtung

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03286547A (ja) * 1990-04-02 1991-12-17 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JPH10335383A (ja) * 1997-05-28 1998-12-18 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP3810529B2 (ja) * 1997-09-05 2006-08-16 株式会社フジクラ 光部品の組立方法
JP4897133B2 (ja) * 1999-12-09 2012-03-14 ソニー株式会社 半導体発光素子、その製造方法および配設基板
JP2001230492A (ja) * 2000-02-21 2001-08-24 Fuji Photo Film Co Ltd 半導体発光装置
CN1292494C (zh) * 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
US6680959B2 (en) * 2000-07-18 2004-01-20 Rohm Co., Ltd. Semiconductor light emitting device and semiconductor laser
US20030099273A1 (en) * 2001-01-09 2003-05-29 Murry Stefan J. Method and apparatus for coupling a surface-emitting laser to an external device
CN1224148C (zh) 2001-02-20 2005-10-19 奥斯兰姆奥普托半导体有限责任公司 光抽运的表面发射半导体激光器件及其制造方法
JP4242599B2 (ja) * 2002-04-08 2009-03-25 パナソニック株式会社 窒化物半導体装置の製造方法及び窒化物半導体基板の製造方法
US6936929B1 (en) * 2003-03-17 2005-08-30 National Semiconductor Corporation Multichip packages with exposed dice
JP3794489B2 (ja) * 2003-06-18 2006-07-05 セイコーエプソン株式会社 光通信モジュール及びその製造方法、光通信装置、電子機器
TWI240434B (en) * 2003-06-24 2005-09-21 Osram Opto Semiconductors Gmbh Method to produce semiconductor-chips
US7164702B1 (en) * 2003-08-29 2007-01-16 The United States Of America As Represented By The Secretary Of The Army Optical transmitters and interconnects using surface-emitting lasers and micro-optical elements
JP4439313B2 (ja) * 2004-03-31 2010-03-24 三洋電機株式会社 光学モジュールの製造方法
US7408199B2 (en) * 2004-04-02 2008-08-05 Nichia Corporation Nitride semiconductor laser device and nitride semiconductor device
JP4614715B2 (ja) * 2004-08-31 2011-01-19 三洋電機株式会社 半導体レーザ装置およびその製造方法
US7817695B2 (en) * 2004-09-22 2010-10-19 Osram Opto Semiconductors Gmbh Lateral optically pumped surface-emitting semiconductor laser on a heat sink
US7932111B2 (en) * 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
DE102005053274A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Mehrzahl von Halbleiterchips und Halbleiterbauelement
DE102006017293A1 (de) * 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer optisch pumpbaren Halbleitervorrichtung
DE102006017294A1 (de) * 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh Optisch pumpbare Halbleitervorrichtung
DE102006033502A1 (de) 2006-05-03 2007-11-15 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper mit Trägersubstrat und Verfahren zur Herstellung eines solchen
DE102006042196A1 (de) * 2006-06-30 2008-01-03 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterkörper mit vertikaler Emissionsrichtung und stabilisierter Emissionswellenlänge
JP4948307B2 (ja) * 2006-07-31 2012-06-06 三洋電機株式会社 半導体レーザ素子およびその製造方法

Also Published As

Publication number Publication date
US7995633B2 (en) 2011-08-09
EP2091116B1 (de) 2020-04-08
US20090232177A1 (en) 2009-09-17
EP2091116A2 (de) 2009-08-19
JP2009194388A (ja) 2009-08-27
DE102008009108A1 (de) 2009-08-20
EP2091116A3 (de) 2013-10-02

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