JP2011512683A5 - - Google Patents

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Publication number
JP2011512683A5
JP2011512683A5 JP2010547042A JP2010547042A JP2011512683A5 JP 2011512683 A5 JP2011512683 A5 JP 2011512683A5 JP 2010547042 A JP2010547042 A JP 2010547042A JP 2010547042 A JP2010547042 A JP 2010547042A JP 2011512683 A5 JP2011512683 A5 JP 2011512683A5
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JP
Japan
Prior art keywords
layer
region
electrical contact
emitting device
radiation
Prior art date
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Granted
Application number
JP2010547042A
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English (en)
Japanese (ja)
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JP2011512683A (ja
JP5579080B2 (ja
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Publication date
Priority claimed from DE102008014927A external-priority patent/DE102008014927A1/de
Application filed filed Critical
Publication of JP2011512683A publication Critical patent/JP2011512683A/ja
Publication of JP2011512683A5 publication Critical patent/JP2011512683A5/ja
Application granted granted Critical
Publication of JP5579080B2 publication Critical patent/JP5579080B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010547042A 2008-02-22 2009-02-19 複数のビーム放射構成素子を作製する方法およびビーム放射構成素子 Expired - Fee Related JP5579080B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008010510 2008-02-22
DE102008010510.4 2008-02-22
DE102008014927A DE102008014927A1 (de) 2008-02-22 2008-03-19 Verfahren zur Herstellung einer Mehrzahl von strahlungsemittierenden Bauelementen und strahlungsemittierendes Bauelement
DE102008014927.6 2008-03-19
PCT/DE2009/000249 WO2009103283A1 (de) 2008-02-22 2009-02-19 Verfahren zur herstellung einer mehrzahl von strahlungsemittierenden bauelementen und strahlungsemittierendes bauelement

Publications (3)

Publication Number Publication Date
JP2011512683A JP2011512683A (ja) 2011-04-21
JP2011512683A5 true JP2011512683A5 (enExample) 2011-12-15
JP5579080B2 JP5579080B2 (ja) 2014-08-27

Family

ID=40896796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010547042A Expired - Fee Related JP5579080B2 (ja) 2008-02-22 2009-02-19 複数のビーム放射構成素子を作製する方法およびビーム放射構成素子

Country Status (8)

Country Link
US (1) US8790939B2 (enExample)
EP (1) EP2255396B1 (enExample)
JP (1) JP5579080B2 (enExample)
KR (1) KR101525638B1 (enExample)
CN (1) CN101946339B (enExample)
DE (1) DE102008014927A1 (enExample)
TW (1) TW200947765A (enExample)
WO (1) WO2009103283A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012008637A1 (de) 2012-05-02 2013-11-07 Heraeus Noblelight Gmbh Optisches Modul mit Ausformung zur Montage
DE102012025826B3 (de) * 2012-05-02 2020-09-24 Heraeus Noblelight Gmbh Optisches Modul mit Ausformung zur Montage
JP6176302B2 (ja) * 2015-01-30 2017-08-09 日亜化学工業株式会社 発光装置の製造方法
DE102015105661B4 (de) 2015-04-14 2022-04-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Vorrichtung mit einer Mischung aufweisend ein Silikon und ein fluor-organisches Additiv
JP6925100B2 (ja) * 2015-05-21 2021-08-25 日亜化学工業株式会社 発光装置
TWI585844B (zh) * 2015-09-25 2017-06-01 光寶光電(常州)有限公司 發光二極體封裝結構及其製造方法
DE102017117548A1 (de) * 2017-08-02 2019-02-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102017117550A1 (de) * 2017-08-02 2019-02-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
CN114242601B (zh) * 2021-11-30 2025-09-05 北京卫星制造厂有限公司 一种用于igbt模块的密封方法

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JP3604108B2 (ja) 1997-02-17 2004-12-22 株式会社シチズン電子 チップ型光半導体の製造方法
JPH1174410A (ja) * 1997-08-28 1999-03-16 Citizen Electron Co Ltd 表面実装型チップ部品及びその製造方法
JP3497722B2 (ja) * 1998-02-27 2004-02-16 富士通株式会社 半導体装置及びその製造方法及びその搬送トレイ
JP2000183218A (ja) * 1998-12-14 2000-06-30 Mitsumi Electric Co Ltd Icパッケージの製造方法
JP3455762B2 (ja) * 1999-11-11 2003-10-14 カシオ計算機株式会社 半導体装置およびその製造方法
DE10008203B4 (de) * 2000-02-23 2008-02-07 Vishay Semiconductor Gmbh Verfahren zum Herstellen elektronischer Halbleiterbauelemente
US6345903B1 (en) * 2000-09-01 2002-02-12 Citizen Electronics Co., Ltd. Surface-mount type emitting diode and method of manufacturing same
MY131962A (en) * 2001-01-24 2007-09-28 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
JP2003179269A (ja) * 2001-01-24 2003-06-27 Nichia Chem Ind Ltd 光半導体素子
JP4789350B2 (ja) * 2001-06-11 2011-10-12 シチズン電子株式会社 発光ダイオードの製造方法
JP3844196B2 (ja) * 2001-06-12 2006-11-08 シチズン電子株式会社 発光ダイオードの製造方法
JP2003031526A (ja) * 2001-07-16 2003-01-31 Mitsumi Electric Co Ltd モジュールの製造方法及びモジュール
US6743699B1 (en) * 2003-01-21 2004-06-01 Micron Technology, Inc. Method of fabricating semiconductor components
JP2004319530A (ja) * 2003-02-28 2004-11-11 Sanyo Electric Co Ltd 光半導体装置およびその製造方法
JP2005051150A (ja) * 2003-07-31 2005-02-24 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
WO2005106978A1 (ja) * 2004-04-28 2005-11-10 Matsushita Electric Industrial Co., Ltd. 発光装置およびその製造方法
US7087463B2 (en) * 2004-08-04 2006-08-08 Gelcore, Llc Laser separation of encapsulated submount
JP4747704B2 (ja) 2005-07-20 2011-08-17 豊田合成株式会社 蛍光体層付き発光装置の製造方法
US7842526B2 (en) * 2004-09-09 2010-11-30 Toyoda Gosei Co., Ltd. Light emitting device and method of producing same
JP5128047B2 (ja) 2004-10-07 2013-01-23 Towa株式会社 光デバイス及び光デバイスの生産方法
TW200637033A (en) * 2004-11-22 2006-10-16 Matsushita Electric Industrial Co Ltd Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
JP2007165789A (ja) * 2005-12-16 2007-06-28 Olympus Corp 半導体装置の製造方法
JP2007184426A (ja) * 2006-01-06 2007-07-19 Shinko Electric Ind Co Ltd 半導体装置の製造方法
JP4838005B2 (ja) * 2006-02-20 2011-12-14 京セラ株式会社 発光装置
JP2007324205A (ja) 2006-05-30 2007-12-13 Toyoda Gosei Co Ltd 発光装置
US7816769B2 (en) * 2006-08-28 2010-10-19 Atmel Corporation Stackable packages for three-dimensional packaging of semiconductor dice
US7883810B2 (en) * 2006-11-09 2011-02-08 GM Global Technology Operations LLC Slow purge for improved water removal, freeze durability, purge energy efficiency and voltage degradation due to shutdown/startup cycling
JP4343962B2 (ja) * 2007-01-19 2009-10-14 Okiセミコンダクタ株式会社 半導体装置の製造方法及び半導体装置
US7923846B2 (en) * 2007-11-16 2011-04-12 Stats Chippac Ltd. Integrated circuit package-in-package system with wire-in-film encapsulant

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