JP2011216780A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011216780A5 JP2011216780A5 JP2010085381A JP2010085381A JP2011216780A5 JP 2011216780 A5 JP2011216780 A5 JP 2011216780A5 JP 2010085381 A JP2010085381 A JP 2010085381A JP 2010085381 A JP2010085381 A JP 2010085381A JP 2011216780 A5 JP2011216780 A5 JP 2011216780A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- comparative example
- fabricated
- defects
- observed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010085381A JP5544986B2 (ja) | 2010-04-01 | 2010-04-01 | 貼り合わせｓｏｉウェーハの製造方法、及び貼り合わせｓｏｉウェーハ |
| EP11765184.4A EP2555227B1 (en) | 2010-04-01 | 2011-03-01 | Bonded soi wafer and method for producing the same |
| PCT/JP2011/001175 WO2011125282A1 (ja) | 2010-04-01 | 2011-03-01 | シリコンエピタキシャルウェーハ及びその製造方法、並びに貼り合わせｓｏｉウェーハ及びその製造方法 |
| KR1020127024972A KR101729474B1 (ko) | 2010-04-01 | 2011-03-01 | 접합 ｓｏｉ 웨이퍼의 제조방법 및 접합 ｓｏｉ 웨이퍼 |
| CN201180017235.6A CN102859649B (zh) | 2010-04-01 | 2011-03-01 | 外延硅晶片及其制造方法、以及贴合soi晶片及其制造方法 |
| US13/582,614 US8823130B2 (en) | 2010-04-01 | 2011-03-01 | Silicon epitaxial wafer, method for manufacturing the same, bonded SOI wafer and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010085381A JP5544986B2 (ja) | 2010-04-01 | 2010-04-01 | 貼り合わせｓｏｉウェーハの製造方法、及び貼り合わせｓｏｉウェーハ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011216780A JP2011216780A (ja) | 2011-10-27 |
| JP2011216780A5 true JP2011216780A5 (enExample) | 2012-10-18 |
| JP5544986B2 JP5544986B2 (ja) | 2014-07-09 |
Family
ID=44762253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010085381A Active JP5544986B2 (ja) | 2010-04-01 | 2010-04-01 | 貼り合わせｓｏｉウェーハの製造方法、及び貼り合わせｓｏｉウェーハ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8823130B2 (enExample) |
| EP (1) | EP2555227B1 (enExample) |
| JP (1) | JP5544986B2 (enExample) |
| KR (1) | KR101729474B1 (enExample) |
| CN (1) | CN102859649B (enExample) |
| WO (1) | WO2011125282A1 (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6200273B2 (ja) * | 2013-10-17 | 2017-09-20 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
| US20150270344A1 (en) | 2014-03-21 | 2015-09-24 | International Business Machines Corporation | P-fet with graded silicon-germanium channel |
| CN103871902A (zh) | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | 半导体处理工艺及半导体器件的制备方法 |
| CN105869991B (zh) | 2015-01-23 | 2018-05-11 | 上海华力微电子有限公司 | 用于改善SiGe厚度的均匀性的方法和系统 |
| CN105990172B (zh) | 2015-01-30 | 2018-07-31 | 上海华力微电子有限公司 | 嵌入式SiGe外延测试块的设计 |
| CN105990342B (zh) | 2015-02-13 | 2019-07-19 | 上海华力微电子有限公司 | 具有用于嵌入锗材料的成形腔的半导体器件及其制造工艺 |
| CN104851884A (zh) | 2015-04-14 | 2015-08-19 | 上海华力微电子有限公司 | 用于锗硅填充材料的成形腔 |
| CN104821336B (zh) | 2015-04-20 | 2017-12-12 | 上海华力微电子有限公司 | 用于使用保形填充层改善器件表面均匀性的方法和系统 |
| FR3036845B1 (fr) * | 2015-05-28 | 2017-05-26 | Soitec Silicon On Insulator | Procede de transfert d'une couche d'un substrat monocristallin |
| CN105097554B (zh) | 2015-08-24 | 2018-12-07 | 上海华力微电子有限公司 | 用于减少高浓度外延工艺中的位错缺陷的方法和系统 |
| EP3179093A1 (en) * | 2015-12-08 | 2017-06-14 | Winfoor AB | Rotor blade for a wind turbine and a sub-member |
| JP6474048B2 (ja) * | 2015-12-25 | 2019-02-27 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
| KR102181277B1 (ko) * | 2016-08-10 | 2020-11-20 | 가부시키가이샤 사무코 | 에피택셜 실리콘 웨이퍼의 제조 방법 |
| US10109550B2 (en) * | 2016-08-12 | 2018-10-23 | Qorvo Us, Inc. | Wafer-level package with enhanced performance |
| JP6662250B2 (ja) * | 2016-09-07 | 2020-03-11 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法及び半導体デバイスの製造方法 |
| WO2018186248A1 (ja) * | 2017-04-06 | 2018-10-11 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法およびエピタキシャルシリコンウェーハ |
| US11152363B2 (en) | 2018-03-28 | 2021-10-19 | Qorvo Us, Inc. | Bulk CMOS devices with enhanced performance and methods of forming the same utilizing bulk CMOS process |
| US12062700B2 (en) | 2018-04-04 | 2024-08-13 | Qorvo Us, Inc. | Gallium-nitride-based module with enhanced electrical performance and process for making the same |
| US12046505B2 (en) | 2018-04-20 | 2024-07-23 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation |
| WO2020009759A1 (en) | 2018-07-02 | 2020-01-09 | Qorvo Us, Inc. | Rf semiconductor device and manufacturing method thereof |
| US11646242B2 (en) | 2018-11-29 | 2023-05-09 | Qorvo Us, Inc. | Thermally enhanced semiconductor package with at least one heat extractor and process for making the same |
| US12125825B2 (en) | 2019-01-23 | 2024-10-22 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
| US12057374B2 (en) | 2019-01-23 | 2024-08-06 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
| EP3915134A1 (en) | 2019-01-23 | 2021-12-01 | Qorvo US, Inc. | Rf semiconductor device and manufacturing method thereof |
| US11387157B2 (en) | 2019-01-23 | 2022-07-12 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
| US12046570B2 (en) | 2019-01-23 | 2024-07-23 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
| US12046483B2 (en) | 2019-01-23 | 2024-07-23 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
| US12074086B2 (en) | 2019-11-01 | 2024-08-27 | Qorvo Us, Inc. | RF devices with nanotube particles for enhanced performance and methods of forming the same |
| US11646289B2 (en) | 2019-12-02 | 2023-05-09 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
| US11923238B2 (en) | 2019-12-12 | 2024-03-05 | Qorvo Us, Inc. | Method of forming RF devices with enhanced performance including attaching a wafer to a support carrier by a bonding technique without any polymer adhesive |
| US12129168B2 (en) | 2019-12-23 | 2024-10-29 | Qorvo Us, Inc. | Microelectronics package with vertically stacked MEMS device and controller device |
| DE102020209092A1 (de) * | 2020-07-21 | 2022-01-27 | Sicrystal Gmbh | Kristallstrukturorientierung in Halbleiter-Halbzeugen und Halbleitersubstraten zum Verringern von Sprüngen und Verfahren zum Einstellen von dieser |
| CN116583949A (zh) | 2020-12-11 | 2023-08-11 | Qorvo美国公司 | 多级3d堆叠式封装和其形成方法 |
| US12062571B2 (en) | 2021-03-05 | 2024-08-13 | Qorvo Us, Inc. | Selective etching process for SiGe and doped epitaxial silicon |
| US20250069945A1 (en) * | 2023-08-24 | 2025-02-27 | Globalwafers Co., Ltd. | Methods of preparing silicon-on-insulator structures using epitaxial wafers |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62226891A (ja) * | 1986-03-28 | 1987-10-05 | Shin Etsu Handotai Co Ltd | 半導体装置用基板 |
| JPH03194921A (ja) * | 1989-12-22 | 1991-08-26 | Showa Denko Kk | 半導体エピタキシャルウェハー及びその製造方法 |
| JP2772183B2 (ja) * | 1991-11-30 | 1998-07-02 | 東芝セラミックス株式会社 | シリコンウェハの製造方法 |
| JPH06338464A (ja) * | 1993-05-31 | 1994-12-06 | Toshiba Corp | 半導体装置用基板 |
| JP2000260711A (ja) * | 1999-03-11 | 2000-09-22 | Toshiba Corp | 半導体基板製造方法 |
| JP2001274049A (ja) * | 2000-03-27 | 2001-10-05 | Toshiba Microelectronics Corp | 半導体基板及びその製造方法 |
| US6743495B2 (en) * | 2001-03-30 | 2004-06-01 | Memc Electronic Materials, Inc. | Thermal annealing process for producing silicon wafers with improved surface characteristics |
| JP2003204048A (ja) | 2002-01-09 | 2003-07-18 | Shin Etsu Handotai Co Ltd | Ｓｏｉウエーハの製造方法及びｓｏｉウエーハ |
| JP4089354B2 (ja) * | 2002-08-30 | 2008-05-28 | 株式会社Ｓｕｍｃｏ | エピタキシャルウェーハとその製造方法 |
| JP2004339003A (ja) * | 2003-05-15 | 2004-12-02 | Shin Etsu Handotai Co Ltd | シリコンエピタキシャルウェーハ及びシリコンエピタキシャルウェーハの製造方法 |
| JP4423903B2 (ja) * | 2003-07-17 | 2010-03-03 | 信越半導体株式会社 | シリコンエピタキシャルウェーハ及びその製造方法 |
| EP1868230B1 (en) * | 2005-04-06 | 2013-10-23 | Shin-Etsu Handotai Co., Ltd. | Manufacting method of soi wafer and soi wafer manufactured by this method |
| JP2008159667A (ja) * | 2006-12-21 | 2008-07-10 | Siltronic Ag | Ｓｏｉ基板及びｓｏｉ基板の製造方法 |
| JP2008171958A (ja) * | 2007-01-10 | 2008-07-24 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
-
2010
- 2010-04-01 JP JP2010085381A patent/JP5544986B2/ja active Active
-
2011
- 2011-03-01 CN CN201180017235.6A patent/CN102859649B/zh active Active
- 2011-03-01 US US13/582,614 patent/US8823130B2/en active Active
- 2011-03-01 WO PCT/JP2011/001175 patent/WO2011125282A1/ja not_active Ceased
- 2011-03-01 EP EP11765184.4A patent/EP2555227B1/en active Active
- 2011-03-01 KR KR1020127024972A patent/KR101729474B1/ko active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011216780A5 (enExample) | ||
| WO2012057517A3 (ko) | 화합물 반도체 장치 및 화합물 반도체 제조방법 | |
| WO2011075228A3 (en) | Isolation for nanowire devices | |
| WO2010151857A3 (en) | Method for forming iii-v semiconductor structures including aluminum-silicon nitride passivation | |
| WO2012161451A3 (ko) | 반도체 박막 구조 및 그 형성 방법 | |
| WO2013040423A3 (en) | Abrasive article and method of forming | |
| EP2668661A1 (de) | Verfahren zum permanenten bonden von wafern | |
| WO2014102222A9 (fr) | Procédé microélectronique de gravure d'une couche | |
| GB2507188A (en) | Method for forming bonded structures and bonded structures formed thereby | |
| EP2724366A4 (en) | PAINTING A LASER-CUT SEMICONDUCTOR BEFORE DICING A DIE ATTACH FILM (DAF) OR A LAYER FROM ANOTHER MATERIAL | |
| WO2013009007A3 (en) | Optical member, display device having the same and method of fabricating the same | |
| SG11201406941TA (en) | Film adhesive composition, method for producing the same, film adhesive, semiconductor package using the film adhesive, and method for manufacturing the semiconductor package | |
| EP2490048A3 (en) | Optical member, method of manufacturing the same, and optical system using the same | |
| JP2010242187A5 (enExample) | ||
| WO2012054810A3 (en) | Manufacturing of small film strips | |
| JP2012033615A5 (enExample) | ||
| WO2013003420A3 (en) | A semiconductor substrate and method of manufacturing | |
| JP2015518270A5 (enExample) | ||
| EP3178107B8 (en) | Semiconductor structure comprising an active semiconductor layer of the iii-v type on a buffer layer stack and method for producing semiconductor structure | |
| WO2010124059A3 (en) | Crystalline thin-film photovoltaic structures and methods for forming the same | |
| WO2009116830A3 (ko) | 반도체 소자 및 그 제조방법 | |
| EP2648234A4 (en) | Light receiving element, semiconductor epitaxial wafer, method for manufacturing the light receiving element and the semiconductor epitaxial wafer, and detecting apparatus | |
| EP2477244A3 (en) | Wafer level light-emitting device package and method of manufacturing the same | |
| JP2013023736A5 (enExample) | ||
| WO2012105800A3 (ko) | 나노전력발전소자 및 이의 제조방법 |