WO2012161451A3 - 반도체 박막 구조 및 그 형성 방법 - Google Patents
반도체 박막 구조 및 그 형성 방법 Download PDFInfo
- Publication number
- WO2012161451A3 WO2012161451A3 PCT/KR2012/003782 KR2012003782W WO2012161451A3 WO 2012161451 A3 WO2012161451 A3 WO 2012161451A3 KR 2012003782 W KR2012003782 W KR 2012003782W WO 2012161451 A3 WO2012161451 A3 WO 2012161451A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thin film
- substrate
- semiconductor thin
- forming
- film structure
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 5
- 239000010409 thin film Substances 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 5
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/114,772 US9793359B2 (en) | 2011-05-20 | 2012-05-15 | Semiconductor thin film structure and method of forming the same |
DE112012002182.7T DE112012002182B4 (de) | 2011-05-20 | 2012-05-15 | Dünnschicht-Halbleiterstruktur und Verfahren zum Bilden derselben |
CN201280024298.9A CN103608897B (zh) | 2011-05-20 | 2012-05-15 | 半导体薄膜结构以及其形成方法 |
JP2014509253A JP5944489B2 (ja) | 2011-05-20 | 2012-05-15 | 半導体薄膜構造及びその形成方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110047692A KR101235239B1 (ko) | 2011-05-20 | 2011-05-20 | 반도체 박막 구조 및 그 형성 방법 |
KR10-2011-0047692 | 2011-05-20 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2012161451A2 WO2012161451A2 (ko) | 2012-11-29 |
WO2012161451A3 true WO2012161451A3 (ko) | 2013-03-21 |
WO2012161451A9 WO2012161451A9 (ko) | 2013-05-16 |
Family
ID=47217855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2012/003782 WO2012161451A2 (ko) | 2011-05-20 | 2012-05-15 | 반도체 박막 구조 및 그 형성 방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9793359B2 (ko) |
JP (2) | JP5944489B2 (ko) |
KR (1) | KR101235239B1 (ko) |
CN (1) | CN103608897B (ko) |
DE (1) | DE112012002182B4 (ko) |
TW (1) | TWI557939B (ko) |
WO (1) | WO2012161451A2 (ko) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013105035A1 (de) * | 2013-05-16 | 2014-11-20 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterchips |
KR101547546B1 (ko) * | 2013-09-17 | 2015-08-28 | 서울대학교산학협력단 | 박막 구조체 및 그 제조방법 |
KR101557083B1 (ko) * | 2013-10-07 | 2015-10-05 | 주식회사 헥사솔루션 | 반도체 적층 구조 및 그 형성 방법 |
KR20150086127A (ko) | 2014-01-17 | 2015-07-27 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR101590475B1 (ko) * | 2014-07-10 | 2016-02-01 | 주식회사 헥사솔루션 | 반도체 적층 구조 및 그 형성 방법 |
KR102232265B1 (ko) * | 2014-07-14 | 2021-03-25 | 주식회사 헥사솔루션 | 기판 구조, 그 형성방법, 및 이를 이용한 질화물 반도체 제조방법 |
KR20160008382A (ko) | 2014-07-14 | 2016-01-22 | 서울대학교산학협력단 | 반도체 적층 구조, 이를 이용한 질화물 반도체층 분리방법 및 장치 |
TWI550921B (zh) | 2014-07-17 | 2016-09-21 | 嘉晶電子股份有限公司 | 氮化物半導體結構 |
CN105428481B (zh) * | 2015-12-14 | 2018-03-16 | 厦门市三安光电科技有限公司 | 氮化物底层及其制作方法 |
JP7094558B2 (ja) * | 2016-01-05 | 2022-07-04 | スージョウ レキン セミコンダクター カンパニー リミテッド | 半導体素子 |
KR101809252B1 (ko) | 2017-02-24 | 2017-12-14 | 서울대학교산학협력단 | 반도체 적층 구조, 이를 이용한 질화물 반도체층 분리방법 및 장치 |
CN110710072B (zh) * | 2017-04-12 | 2022-07-22 | 感应光子公司 | 具有结合光束转向的超小型垂直腔表面发射激光发射器的器件 |
CN107731838A (zh) * | 2017-11-09 | 2018-02-23 | 长江存储科技有限责任公司 | 一种nand存储器及其制备方法 |
TWM562491U (zh) * | 2018-01-09 | 2018-06-21 | Epileds Technologies Inc | 紫外光發光二極體 |
CN108550527B (zh) * | 2018-05-16 | 2021-01-22 | 京东方科技集团股份有限公司 | 一种图形化方法 |
KR102136579B1 (ko) | 2018-07-27 | 2020-07-22 | 서울대학교산학협력단 | 표시 장치 |
KR20210102739A (ko) | 2020-02-12 | 2021-08-20 | 삼성전자주식회사 | Led 소자 및 그 제조방법과, led 소자를 포함하는 디스플레이 장치 |
KR102537068B1 (ko) * | 2020-11-27 | 2023-05-26 | 서울대학교산학협력단 | 사파이어 나노 멤브레인 상에서 산화갈륨층을 포함하는 기판의 제조방법 |
KR102591096B1 (ko) * | 2020-12-15 | 2023-10-18 | 연세대학교 산학협력단 | 인장 변형을 이용한 광 검출기 제조 방법, 이에 의해 제조되는 광 검출기, 및 그 제조 장치 |
Citations (3)
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JP2002200599A (ja) * | 2000-10-30 | 2002-07-16 | Sony Corp | 三次元構造体の作製方法 |
US6610593B2 (en) * | 2000-08-31 | 2003-08-26 | Georgia Tech Research Corporation | Fabrication of semiconductor device with air gaps for ultra low capacitance interconnections and methods of making same |
KR20100029704A (ko) * | 2008-09-08 | 2010-03-17 | 서울대학교산학협력단 | 질화물 박막 구조 및 그 형성 방법 |
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US5787104A (en) * | 1995-01-19 | 1998-07-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element and method for fabricating the same |
US7132691B1 (en) | 1998-09-10 | 2006-11-07 | Rohm Co., Ltd. | Semiconductor light-emitting device and method for manufacturing the same |
JP3631724B2 (ja) * | 2001-03-27 | 2005-03-23 | 日本電気株式会社 | Iii族窒化物半導体基板およびその製造方法 |
US6936851B2 (en) * | 2003-03-21 | 2005-08-30 | Tien Yang Wang | Semiconductor light-emitting device and method for manufacturing the same |
FR2895419B1 (fr) | 2005-12-27 | 2008-02-22 | Commissariat Energie Atomique | Procede de realisation simplifiee d'une structure epitaxiee |
US7928448B2 (en) * | 2007-12-04 | 2011-04-19 | Philips Lumileds Lighting Company, Llc | III-nitride light emitting device including porous semiconductor layer |
KR101040462B1 (ko) | 2008-12-04 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
JP5396911B2 (ja) | 2009-02-25 | 2014-01-22 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
WO2010123165A1 (en) * | 2009-04-24 | 2010-10-28 | Snu R&Db Foundation | Method of fabricating substrate where patterns are formed |
KR101154596B1 (ko) * | 2009-05-21 | 2012-06-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
US8864045B1 (en) * | 2010-11-19 | 2014-10-21 | Stc.Unm | Aerosol fabrication methods for monodisperse nanoparticles |
-
2011
- 2011-05-20 KR KR1020110047692A patent/KR101235239B1/ko active IP Right Grant
-
2012
- 2012-05-15 US US14/114,772 patent/US9793359B2/en active Active
- 2012-05-15 DE DE112012002182.7T patent/DE112012002182B4/de active Active
- 2012-05-15 JP JP2014509253A patent/JP5944489B2/ja active Active
- 2012-05-15 WO PCT/KR2012/003782 patent/WO2012161451A2/ko active Application Filing
- 2012-05-15 CN CN201280024298.9A patent/CN103608897B/zh active Active
- 2012-05-18 TW TW101117783A patent/TWI557939B/zh active
-
2015
- 2015-11-10 JP JP2015220153A patent/JP6219905B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6610593B2 (en) * | 2000-08-31 | 2003-08-26 | Georgia Tech Research Corporation | Fabrication of semiconductor device with air gaps for ultra low capacitance interconnections and methods of making same |
JP2002200599A (ja) * | 2000-10-30 | 2002-07-16 | Sony Corp | 三次元構造体の作製方法 |
KR20100029704A (ko) * | 2008-09-08 | 2010-03-17 | 서울대학교산학협력단 | 질화물 박막 구조 및 그 형성 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR20120129439A (ko) | 2012-11-28 |
DE112012002182T8 (de) | 2014-04-10 |
DE112012002182T5 (de) | 2014-02-13 |
KR101235239B1 (ko) | 2013-02-21 |
WO2012161451A2 (ko) | 2012-11-29 |
CN103608897B (zh) | 2017-10-31 |
US20140070372A1 (en) | 2014-03-13 |
TW201251111A (en) | 2012-12-16 |
JP6219905B2 (ja) | 2017-10-25 |
CN103608897A (zh) | 2014-02-26 |
JP2014519188A (ja) | 2014-08-07 |
WO2012161451A9 (ko) | 2013-05-16 |
TWI557939B (zh) | 2016-11-11 |
JP2016074596A (ja) | 2016-05-12 |
US9793359B2 (en) | 2017-10-17 |
DE112012002182B4 (de) | 2023-07-27 |
JP5944489B2 (ja) | 2016-07-05 |
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