DE112012002182T8 - Dünnschicht-Halbleiterstruktur und Verfahren zum Bilden derselben - Google Patents

Dünnschicht-Halbleiterstruktur und Verfahren zum Bilden derselben Download PDF

Info

Publication number
DE112012002182T8
DE112012002182T8 DE112012002182.7T DE112012002182T DE112012002182T8 DE 112012002182 T8 DE112012002182 T8 DE 112012002182T8 DE 112012002182 T DE112012002182 T DE 112012002182T DE 112012002182 T8 DE112012002182 T8 DE 112012002182T8
Authority
DE
Germany
Prior art keywords
thin
forming
same
semiconductor structure
film semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112012002182.7T
Other languages
English (en)
Other versions
DE112012002182B4 (de
DE112012002182T5 (de
Inventor
Euijoon Yoon
Shin-woo Ha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hexasolution Co Ltd Suwon-Si Kr
Original Assignee
SNU R&DB Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SNU R&DB Foundation filed Critical SNU R&DB Foundation
Publication of DE112012002182T5 publication Critical patent/DE112012002182T5/de
Publication of DE112012002182T8 publication Critical patent/DE112012002182T8/de
Application granted granted Critical
Publication of DE112012002182B4 publication Critical patent/DE112012002182B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
DE112012002182.7T 2011-05-20 2012-05-15 Dünnschicht-Halbleiterstruktur und Verfahren zum Bilden derselben Active DE112012002182B4 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2011-0047692 2011-05-20
KRKR-10-2011-0047692 2011-05-20
KR1020110047692A KR101235239B1 (ko) 2011-05-20 2011-05-20 반도체 박막 구조 및 그 형성 방법
PCT/KR2012/003782 WO2012161451A2 (ko) 2011-05-20 2012-05-15 반도체 박막 구조 및 그 형성 방법

Publications (3)

Publication Number Publication Date
DE112012002182T5 DE112012002182T5 (de) 2014-02-13
DE112012002182T8 true DE112012002182T8 (de) 2014-04-10
DE112012002182B4 DE112012002182B4 (de) 2023-07-27

Family

ID=47217855

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112012002182.7T Active DE112012002182B4 (de) 2011-05-20 2012-05-15 Dünnschicht-Halbleiterstruktur und Verfahren zum Bilden derselben

Country Status (7)

Country Link
US (1) US9793359B2 (de)
JP (2) JP5944489B2 (de)
KR (1) KR101235239B1 (de)
CN (1) CN103608897B (de)
DE (1) DE112012002182B4 (de)
TW (1) TWI557939B (de)
WO (1) WO2012161451A2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013105035A1 (de) 2013-05-16 2014-11-20 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips
KR101547546B1 (ko) 2013-09-17 2015-08-28 서울대학교산학협력단 박막 구조체 및 그 제조방법
KR101557083B1 (ko) * 2013-10-07 2015-10-05 주식회사 헥사솔루션 반도체 적층 구조 및 그 형성 방법
KR20150086127A (ko) 2014-01-17 2015-07-27 삼성디스플레이 주식회사 액정 표시 장치
KR101590475B1 (ko) * 2014-07-10 2016-02-01 주식회사 헥사솔루션 반도체 적층 구조 및 그 형성 방법
KR102232265B1 (ko) * 2014-07-14 2021-03-25 주식회사 헥사솔루션 기판 구조, 그 형성방법, 및 이를 이용한 질화물 반도체 제조방법
KR20160008382A (ko) 2014-07-14 2016-01-22 서울대학교산학협력단 반도체 적층 구조, 이를 이용한 질화물 반도체층 분리방법 및 장치
TWI550921B (zh) 2014-07-17 2016-09-21 嘉晶電子股份有限公司 氮化物半導體結構
CN105428481B (zh) * 2015-12-14 2018-03-16 厦门市三安光电科技有限公司 氮化物底层及其制作方法
WO2017119711A1 (ko) 2016-01-05 2017-07-13 엘지이노텍(주) 반도체 소자
KR101809252B1 (ko) 2017-02-24 2017-12-14 서울대학교산학협력단 반도체 적층 구조, 이를 이용한 질화물 반도체층 분리방법 및 장치
US10483722B2 (en) * 2017-04-12 2019-11-19 Sense Photonics, Inc. Devices with ultra-small vertical cavity surface emitting laser emitters incorporating beam steering
CN107731838A (zh) * 2017-11-09 2018-02-23 长江存储科技有限责任公司 一种nand存储器及其制备方法
TWM562491U (zh) * 2018-01-09 2018-06-21 Epileds Technologies Inc 紫外光發光二極體
CN108550527B (zh) * 2018-05-16 2021-01-22 京东方科技集团股份有限公司 一种图形化方法
KR102136579B1 (ko) 2018-07-27 2020-07-22 서울대학교산학협력단 표시 장치
KR20210102739A (ko) 2020-02-12 2021-08-20 삼성전자주식회사 Led 소자 및 그 제조방법과, led 소자를 포함하는 디스플레이 장치
KR102537068B1 (ko) * 2020-11-27 2023-05-26 서울대학교산학협력단 사파이어 나노 멤브레인 상에서 산화갈륨층을 포함하는 기판의 제조방법
KR102591096B1 (ko) * 2020-12-15 2023-10-18 연세대학교 산학협력단 인장 변형을 이용한 광 검출기 제조 방법, 이에 의해 제조되는 광 검출기, 및 그 제조 장치
US20220216368A1 (en) * 2021-01-04 2022-07-07 Samsung Electronics Co., Ltd. Semiconductor structure and method of manufacturing the same
KR102703726B1 (ko) * 2022-06-22 2024-09-05 삼성전자주식회사 반도체 소자 제조 방법, 반도체 소자 및 그 장치
KR102681721B1 (ko) * 2022-06-27 2024-07-04 삼성전자주식회사 마이크로 led 제조방법 및 이 방법이 적용된 디스플레이 장치의 제조방법
CN118231545B (zh) * 2024-05-27 2024-07-16 北京大学 一种图形化氮化铝复合衬底及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5787104A (en) * 1995-01-19 1998-07-28 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element and method for fabricating the same
KR100648759B1 (ko) 1998-09-10 2006-11-23 로무 가부시키가이샤 반도체발광소자 및 그 제조방법
TWI226103B (en) 2000-08-31 2005-01-01 Georgia Tech Res Inst Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same
JP2002200599A (ja) * 2000-10-30 2002-07-16 Sony Corp 三次元構造体の作製方法
JP3631724B2 (ja) * 2001-03-27 2005-03-23 日本電気株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
US6936851B2 (en) * 2003-03-21 2005-08-30 Tien Yang Wang Semiconductor light-emitting device and method for manufacturing the same
FR2895419B1 (fr) 2005-12-27 2008-02-22 Commissariat Energie Atomique Procede de realisation simplifiee d'une structure epitaxiee
US7928448B2 (en) 2007-12-04 2011-04-19 Philips Lumileds Lighting Company, Llc III-nitride light emitting device including porous semiconductor layer
KR101101780B1 (ko) 2008-09-08 2012-01-05 서울대학교산학협력단 질화물 박막 구조 및 그 형성 방법
KR101040462B1 (ko) * 2008-12-04 2011-06-09 엘지이노텍 주식회사 발광 소자 및 그 제조방법
JP5396911B2 (ja) 2009-02-25 2014-01-22 富士通株式会社 化合物半導体装置及びその製造方法
WO2010123165A1 (en) 2009-04-24 2010-10-28 Snu R&Db Foundation Method of fabricating substrate where patterns are formed
KR101154596B1 (ko) * 2009-05-21 2012-06-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8864045B1 (en) * 2010-11-19 2014-10-21 Stc.Unm Aerosol fabrication methods for monodisperse nanoparticles

Also Published As

Publication number Publication date
WO2012161451A3 (ko) 2013-03-21
CN103608897A (zh) 2014-02-26
DE112012002182B4 (de) 2023-07-27
US9793359B2 (en) 2017-10-17
JP2016074596A (ja) 2016-05-12
JP2014519188A (ja) 2014-08-07
JP6219905B2 (ja) 2017-10-25
CN103608897B (zh) 2017-10-31
KR20120129439A (ko) 2012-11-28
WO2012161451A9 (ko) 2013-05-16
US20140070372A1 (en) 2014-03-13
DE112012002182T5 (de) 2014-02-13
TW201251111A (en) 2012-12-16
WO2012161451A2 (ko) 2012-11-29
JP5944489B2 (ja) 2016-07-05
TWI557939B (zh) 2016-11-11
KR101235239B1 (ko) 2013-02-21

Similar Documents

Publication Publication Date Title
DE112012002182T8 (de) Dünnschicht-Halbleiterstruktur und Verfahren zum Bilden derselben
EP2789011A4 (de) Halbleitermodule und herstellungsverfahren dafür
DE112013004552T8 (de) Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
DE11158693T8 (de) Pflanzenbeleuchtungsvorrichtung und Verfahren
EP2662882A4 (de) Halbleiterelement und herstellungsverfahren dafür
BR112014000238A2 (pt) método e artigo
EP2741341A4 (de) Halbleiterbauelement und verfahren zu seiner herstellung
SG11201600923YA (en) Substrate structure and method of manufacturing same
DK3225776T3 (da) Interventionless set packer and setting method for same
DE102012212611A8 (de) Halbleiterpackung und Verfahren zur Herstellung derselben
DE102012103623A8 (de) Verfahren zum Bilden einer Oxidschicht und Verfahren zum Herstellen einer Halbleitervorrichtung mit der Oxidschicht
BR112014010450A2 (pt) composição e método
GB201201291D0 (en) Organic thin-film transistor and method of making the same
EP2725619A4 (de) Halbleiterbauelement und herstellungsverfahren dafür
DE112014001741T8 (de) Halbleitervorrichtung und Verfahren zum Herstellen der Halbleitervorrichtung
EP2662887A4 (de) Halbleiterelement und herstellungsverfahren dafür
DE112011105826B8 (de) Halbleitervorrichtung und Verfahren zur Herstellung selbiger
DE102013103860A8 (de) Chipgehäuse und Verfahren zum Bilden desselben
GB201116029D0 (en) Abradable panel and method of forming the same
DE102013100063A8 (de) LED-Gehäusesubstrat und Verfahren zum Herstellen des LED-Gehäusesubstrates
SG11201400405TA (en) Caninised antibodies and method for the production of same
EP2727134A4 (de) Halbleitersubstrat und verfahren zu seiner herstellung
GB201207599D0 (en) Transistor and the method of manufacture
TWI562385B (en) Semiconductor device and method of making the same
EP2783390A4 (de) Halbleitersubstrat und verfahren zu seiner herstellung

Legal Events

Date Code Title Description
R082 Change of representative

Representative=s name: KUHNEN & WACKER PATENT- UND RECHTSANWALTSBUERO, DE

R081 Change of applicant/patentee

Owner name: HEXASOLUTION CO., LTD., SUWON-SI, KR

Free format text: FORMER OWNER: SNU R&DB FOUNDATION, SEOUL, KR

Effective date: 20150506

Owner name: HEXASOLUTION CO., LTD., SUWON-SI, KR

Free format text: FORMER OWNER: SEOUL TECHNO HOLDINGS, INC., SEOUL, KR

Effective date: 20150521

R082 Change of representative

Representative=s name: KUHNEN & WACKER PATENT- UND RECHTSANWALTSBUERO, DE

Effective date: 20150506

Representative=s name: KUHNEN & WACKER PATENT- UND RECHTSANWALTSBUERO, DE

Effective date: 20150521

R012 Request for examination validly filed
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final